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- 1. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-1
LECTURE 270 – HIGH SPEED OP AMPS
LECTURE ORGANIZATION
Outline
• Extending the GB of conventional op amps
• Cascade Amplifiers
- Voltage amplifiers
- Voltage amplifiers using current feedback
• Summary
CMOS Analog Circuit Design, 2nd Edition Reference
Pages 368-384
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-2
INCREASING THE GB OF OP AMPS
What is the Influence of GB on the Frequency Response?
The unity-gainbandwidth represents a limit in the trade-off between closed loop voltage
gain and the closed-loop -3dB frequency.
Example of a gain of -10 voltage amplifier:
Magnitude
|Avd(0)| dB
20dB
0dB
Op amp frequency response
Amplifier with a gain of -10
log10(ω)
ωA ω-3dB GB
Fig. 7.2-1
What defines the GB?
We know that
GB =
gm
C
where gm is the transconductance that converts the input voltage to current and C is the
capacitor that causes the dominant pole.
This relationship assumes that all higher-order poles are greater than GB.
CMOS Analog Circuit Design © P.E. Allen - 2010
- 2. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-3
What is the Limit of GB?
The following illustrates what
happens when the next higher pole is
not greater than GB:
For a two-stage op amp, the poles
and zeros are:
1.) Dominant pole p1 =
-gm1
Av(0)Cc
2.) Output pole p2 =
-gm6
CL
3.) Mirror pole p3 =
Magnitude
|Avd(0)| dB
20dB
0dB
-gm3
Cgs3+Cgs4 and z3 = 2p3
4.) Nulling pole p4 =
-1
RzCI
5.) Nulling zero z1 =
-1
RzCc-(Cc/gm6)
Op amp frequency response
Amplifier with a gain of -10
log10(ω)
Next higher pole
-40dB/dec
ωA ω-3dB GB
Fig. 7.2-2
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-4
Higher-Order Poles
For reasonable phase margin, the smallest higher-order pole should be 2-3 times larger
than GB if all other higher-order poles are larger than 10GB.
Smallest non-dominant
Larger non-dominant
poles
-10GB -GB
060709-01
Dominant
pole
pole
Av(0) dB
0dB 10GB
GB
GB
Av(0)
log10ω
If the higher-order poles are not greater than 10GB, then the distance from GB to the
smallest non-dominant pole should be increased for reasonable phase margin.
CMOS Analog Circuit Design © P.E. Allen - 2010
- 3. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-5
Increasing the GB of a Two-Stage Op Amp
1.) Use the nulling zero to cancel the closest pole beyond the dominant pole.
2.) The maximum GB would be equal to the magnitude of the second closest pole beyond
the dominant pole.
3.) Adjust the dominant pole so that 2.2GB (second closest pole beyond the dominant
pole)
Illustration which assumes that p2 is the next closest pole beyond the dominant pole:
-p3 -p4 -p2 = z1 -p1
Magnitude
|Avd(0)| dB
0dB
jω
-p1
New Old
log10(ω)
Fig. 7.2-3
Old
GB
GB
Increase
Old New
|p1| |p2|
-40dB/dec
|p4||p3|
New
GB
-60dB/dec
-80dB/dec
σ
Before cancelling
p2 by z1 and
increasing p1
|p1|
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-6
Example 270-1 - Increasing the GB of the Op Amp Designed in Ex. 230-1
Use the two-stage op amp designed
in Example 230-1 and apply the above
approach to increase the gainbandwidth
as much as possible. Use the capacitor
values in the table shown along with Cox
= 6fF/μm2.
Solution
1.) First find the values of p2, p3, and p4.
a.) From Ex. 230-2, we see that
p2 = -95x106 rads/sec.
b.) p3 was found in Ex. 6.3-1 as
p3 = -1.25x109 rads/sec. (also
there is a zero at -2.5x109
rads/sec.)
-
15μm
1μm
vin
+
VDD = 2.5V
M3 M4
15μm
1μm
M1 M2
3μm
1μm
M5
M6
Cc = 3pF
95μA
M7
vout
3μm
1μm
30μA
4.5μm
1μm
VSS = -2.5V
CL =
10pF
M8
30μA
4.5μm
1μm
94μm
1μm
14μm
1μm
Fig. 7.2-3A
Rz
Type P-Channel N-Channel Units
CGSO 220 10-12 220 10-12 F/m
CGDO 220 10-12 220 10-12 F/m
CGBO 700 10-12 700 10-12 F/m
CJ 560 10-6 770 10-6 F/m2
CJSW 350 10-12 380 10-12 F/m
MJ 0.5 0.5
MJSW 0.35 0.38
CMOS Analog Circuit Design © P.E. Allen - 2010
- 4. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-7
Example 270-1 - Continued
(c.) To find p4, we must find CI which is the output capacitance of the first stage of the
op amp. CI consists of the following capacitors,
CI = Cbd2 + Cbd4 + Cgs6 + Cgd2 + Cgd4
For Cbd2 the width is 1.5μm L1+L2+L3=3μm AS/AD=4.5μm2 and PS/PD=9μm.
For Cbd4 the width is 15μm L1+L2+L3=3μm AS/AD=45μm2 and PS/PD=36μm.
From Table 3.2-1:
Cbd2 = (4.5μm2)(770x10-6F/m2) + (9μm)(380x10-12F/m) = 3.47fF+3.42fF 6.89fF
Cbd4 = (45μm2)(560x10-6F/m2) + (36μm)(350x10-12F/m) = 25.2fF+12.6F 37.8fF
Cgs6 in saturation is,
Cgs6=CGDO·W6+0.67(CoxW6L6)=(220x10-12)(85x10-6)+(0.67)(6x10-15)(42.5)
= 18.7fF + 255fF = 273.7fF
Cgd2 = 220x10-12x1.5μm = 0.33fF and Cgd4 = 220x10-12x15μm = 3.3fF
Therefore, CI = 6.9fF + 37.8fF + 273.7fF + 0.33fF + 3.3fF = 322fF. Although Cbd2 and
Cbd4 will be reduced with a reverse bias, let us use these values to provide a margin.
Thus let CI be 322fF.
In Ex. 230-2, Rz was 4.564k which gives p4 = - 0.680x109 rads/sec.
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-8
Example 270-1 - Continued
Therefore, the roots are:
jω
p2 = -0.095G New GB
σ x 109
z3 = -2.5G p3 = -1.25G p4 = -0.68G
-3 -2 -1
070503-01
When p2 is cancelled, the next smaller pole is p4 which will define the new GB. 2.)
Using the nulling zero, z1, to cancel p2, gives p4 as the next smallest pole.
For 60° phase margin GB = |p4|/2.2 if the next smallest pole is more than 10GB.
GB = 0.680x109/2.2 = 0.309x109 rads/sec. or 49.2MHz.
This value of GB is designed from the relationship that GB = gm1/Cc. Assuming gm1 is
constant, then Cc = gm1/GB = (94.25x10-6)/(0.309x109) = 307fF. It might be useful to
increase gm1 in order to keep Cc above the surrounding parasitic capacitors (Cgd6 =
18.7fF). The success of this method assumes that there are no other roots with a
magnitude smaller than 10GB.
The result of this example is to increase the GB from 5MHz to 49MHz.
CMOS Analog Circuit Design © P.E. Allen - 2010
- 5. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-9
Example 270-2 - Increasing the GB of the Folded Cascode Op Amp of Ex. 240-4
Use the folded-cascode op amp designed in
Example 240-4 and apply the above approach to
increase the gainbandwidth as much as possible.
Assume that the drain/source areas are equal to
2μm times the width of the transistor and that all
voltage dependent capacitors are at zero voltage.
Solution
The poles of the folded cascode op amp are:
pA
-1
RACA
(the pole at the source of M6 )
pB
-1
RBCB
(the pole at the source of M7)
p6
-gm10
C6
(the pole at the drain of M6)
p8
-gm8rds8gm10
C8
(the pole at the source of M8)
p9
-gm9
C9 (the pole at the source of M9)
VDD
I4 I5
VPB2 RB
M10 M11
vOU
CL
060628-04
VPB1
M4 M5
RAI
6
I7
M6 M7
VNB2
M8 M9
+
−
vIN
I1 I2
VNB1
M1 M2
M3
I3
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-10
Example 270-2 - Continued
Let us evaluate each of these poles.
1.) For pA, the resistance RA is approximately equal to gm6 and CA is given as
CA = Cgs6 + Cbd1 + Cgd1 + Cbd4 + Cbs6 + Cgd4
From Ex. 240-4, gm6 = 774.6μS and capacitors giving CA are found as,
Cgs6 = (220x10-12·80x10-6) + (0.67)(80μm·0.5μm·6fF/μm2) = 177.6fF
Cbd1 = (770x10-6)(16.5x10-6·2x10-6) + (380x10-12)(37x10-6) = 39.5fF
Cgd1 = (220x10-12·16.5x10-6) = 3.6fF
Cbd4 = Cbs6 = (560x10-6)(80x10-6·2x10-6) + (350x10-12)(2·82x10-6) = 147fF
and
Cgd4 = (220x10-12)(80x10-6) = 17.6fF
Therefore,
CA = 177.6fF + 39.5fF + 3.6fF + 147fF + 17.6fF + 147fF = 0.532pF
Thus,
pA =
-774.6x10-6
0.532x10-12 = -1.456x109 rads/sec.
2.) For the pole, pB, the capacitance connected to this node is
CB = Cgd2 + Cbd2 + Cgs7 + Cgd5 + Cbd5 + Cbs7
CMOS Analog Circuit Design © P.E. Allen - 2010
- 6. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-11
Example 270-2 - Continued
The various capacitors above are found as
Cgd2 = (220x10-12·16.5x10-6) = 3.6fF
Cbd2 = (770x10-6)(16.5x10-6·2x10-6) + (380x10-12)(37x10-6) = 39.5fF
Cgs7 = (220x10-12·80x10-6) + (0.67)(80μm·0.5μm·6fF/μm2) = 177.6fF
Cgd5 = (220x10-12)(80x10-6) = 17.6fF
and
Cbd5 = Cbs7 = (560x10-6)(80x10-6·2x10-6) + (350x10-12)(2·82x10-6) = 147fF
The value of CB is the same as CA and gm6 is assumed to be the same as gm7 giving pB =
pA = -1.456x109 rads/sec.
3.) For the pole, p6, the capacitance connected to this node is
C6= Cbd6 + Cgd6 + Cgs10 + Cgs11+ Cbd8 + Cgd8
The various capacitors above are found as
Cbd6 = (560x10-6)(80x10-6·2x10-6) + (350x10-12)(2·82x10-6) = 147fF
Cgs10 = Cgs11 = (220x10-12·10x10-6) + (0.67)(10μm·0.5μm·6fF/μm2) = 22.2fF
Cbd8 = (770x10-6)(10x10-6·2x10-6) + (380x10-12)(2·12x10-6) = 24.5fF
Cgd8 = (220x10-12)(10x10-6) = 2.2fF and Cgd6 = Cgd5 =17.6fF
Therefore,
C6 = 147fF + 17.6fF + 22.2fF + 22.2fF + 2.2fF + 17.6fF = 0.229pF
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-12
Example 270-2 - Continued
From Ex. 240-4, gm6 = 774.6x10-6. Therefore, p6, can be expressed as
-p6 =
774.6x10-6
0.229x10-12 = 3.38x109 rads/sec.
4.) Next, we consider the pole, p8. The capacitance connected to this node is
C8= Cbd10 + Cgd10 + Cgs8 + Cbs8
These capacitors are given as,
Cbs8 = Cbd10 = (770x10-6)(10x10-6·2x10-6) + (380x10-12)(2·12x10-6) = 24.5fF
Cgs8 = (220x10-12·10x10-6) + (0.67)(10μm·0.5μm·6fF//μm2) = 22.2fF
and
Cgd10 = (220x10-12)(10x10-6) = 2.2fF
The capacitance C8 is equal to
C8 = 24.5fF + 2.2fF + 22.2fF + 24.5fF = 73.4FF
Using the values of Ex. 240-4 of 600μS, the pole p8 is found as,
-p8 = gm8rds8 gm10/C8 = -600μS·600μS·/4.5μS·73.4fF = -1090x109 rads/sec.
5.) The capacitance for the pole at p9 is identical with C8. Therefore, since gm9 is
600μS, the pole p9 is -p9 = 8.17x109 rads/sec.
CMOS Analog Circuit Design © P.E. Allen - 2010
- 7. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-13
Example 270-2 - Continued
The poles are summarized below:
pA = -1.456x109 rads/sec pB = -1.456x109 rads/sec p6 = -3.38x109 rads/sec
p8 = -1090x109 rads/sec p9 = -8.17x109 rads/sec
jω
New GB
= 0.2x109
σ x 109
p8 = -1090G
p9 = -8.17G p6 = -3.38G
pA = pB
= -1.456G
-3 -2 -1
-8 -7 -6 -5 -4
070503-02
The smallest of these poles is pA or pB. Since p6 is not much larger than pA or pB, we
will find the new GB by dividing pA or pB by 4 (which is guess rather than 2.2) to get
364x106 rads/sec. Thus the new GB will be 364/2 or 58MHz.
Checking our guess gives a phase margin of,
PM = 90° - 2tan-1(0.364/1.456) - tan-1(0.364/3.38) = 56° which is okay
The magnitude of the dominant pole is given as
pdominant = GB/Avd(0) = 364x106/3,678 = 99,000 rads/sec.
The value of load capacitor that will give this pole is
CL = (pdominant·Rout)-1 = (99x103·7.44M)-1 = 1.36pF
Therefore, the new GB = 58MHz compared with the old GB = 10MHz.
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-14
Elimination of Higher-Order Poles
The minimum circuitry for a cascode op amp is shown below:
Non-dominant
Pole
vout
CL
Non-dominant
Pole
060710-01
vin + VPB1
VPB2
Dominant Pole
VNB2
vin + VNB1
VDD
M4
M3
M2
M1
If the source-drain area between M1 and M2 and M3 and M4 can be minimized, the non-dominant
poles will be quite large.
CMOS Analog Circuit Design © P.E. Allen - 2010
- 8. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-15
Dynamically Biased, Push-Pull, Cascode Op Amp
M4
M3
vout
M2
M1
M8
M7
IB
M6
VDD
φ1 φ2
C1
φ1
C2
φ2
VSS
M5
vin+
φ2
φ1
+
-
VB2
vin-
+
-
VB1
Fig.7.2-5
Push-pull, cascode amplifier: M1-M2 and M3-M4
Bias circuitry: M5-M6-C2 and M7-M8-C1
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-16
Dynamically Biased, Push-Pull, Cascode Op Amp - Continued
Operation:
M8
M7
+
-
VB2
+
-
VDD-VB2-vin+
IB vin+
M6
VDD
+
-
vin+-VSS-VB1
VSS
C1
M5
C2
+
-
VB1
M4
M3
vout
M2
M1
VDD
C1
C2
VSS
VDD-VB2-(vin+-vin-)
VDD-VB2-vin+
vin-
+
-
+
-
vin+-VSS-VB1
VSS+VB1-(vin+-vin-)
Equivalent circuit during the φ1 clock period Equivalent circuit during the φ2 clock period.
Fig. 7.2-6
CMOS Analog Circuit Design © P.E. Allen - 2010
- 9. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-17
Dynamically Biased, Push-Pull, Cascode Op Amp - Continued
This circuit will operate on both clock phases† .
M4
M3
vout
M2
M1
M8
M7
φ2 φ1
φ1
φ1
+
VB2
-
vin-
IB φ2
M6
VDD
C4
C3
φ2 φ1
φ1 φ2
VSS
C2
C1
M5
vin+
φ2
φ2
φ1
+
VB1
-
Fig. 7.2-7
Performance (1.5μm CMOS):
• 1.6mW dissipation
• GB 130MHz (CL=2.2pF)
• Settling time of 10ns (CL=10pF)
This amplifier was used with a
28.6MHz clock to realize a 5th-order
switched capacitor filter having a
cutoff frequency of 3.5MHz.
† S. Masuda, et. al., “CMOS Sampled Differential Push-Pull Cascode Op Amp,” Proc. of 1984 International Symposium on Circuits and Systems,
Montreal, Canada, May 1984, pp. 1211-12-14.
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-18
CASCADED AMPLIFIERS USING VOLTAGE AMPLIFIERS
Bandwidth of Cascaded Amplifiers
Cascading of low-gain, wide-bandwidth amplifiers:
Ao
s/ω1+1
Ao
s/ω1+1
Vin Vout
060710-02
Ao
s/ω1+1
A1 A2 An
Ao
s/ω1+1
n
n
Overall gain is Ao
-3dB frequency is,
-3dB = 1 21/n-1
If Ao = 10, 1 = 300x106 rads/sec. and n = 3, then
Overall gain is 60dB and -3dB = 0.511 = 480x106 rads/sec. 76.5 MHz
CMOS Analog Circuit Design © P.E. Allen - 2010
- 10. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-19
Voltage Amplifier Suitable for Cascading
VPB1 VPB1
Μ6
060710-03
VDD
I5 I3 I4 I6
Μ5 Μ3 Μ4
V − out +
+
−
Vin
Μ1 Μ2
I1 I2
VNB1
I7
Μ7
Voltage Gain:
Vout
Vin =
gm1
gm3 =
Kn'(W1/L1)(I3+I5)
Kp'(W3/L3)I3
-3dB
gm3
Cgs1
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-20
Ex. 270-3 - Design of a Voltage Amplifier for Cascading
Design the previous voltage amplifier for a gain of Ao = 10 and a power dissipation of no
more than 1mW. The design should permit Ao to be well defined. What is the -3dB for
this amplifier and what would be the -3dB for a cascade of three identical amplifiers?
Solution
To enhance the accuracy of the gain, we replace M3
and M4 with NMOS transistors to avoid the
variation of the transconductance parameter. This
assumes a p-well technology to avoid bulk effects.
The gain of 10 requires,
W1
L1 (I3+I5) = 100
W3
L3 I3
VDD
VPB1 VPB1
I5 I3 I4 I6
Μ5 Μ3 Μ4
Vout + −
+
−
Vin
Μ1 Μ2
I1 I2
VNB1
I7
Μ7
If VDD = 2.5V, then 2(I3+I5)·2.5V = 1000μW.
Therefore, I3+I5 = 200μA. Let I3 = 20μA and W1/L1 = 10W3/L3.
Choose W1/L1 = 5μm/0.5μm which gives W3/L3 = 0.5μm/0.5μm. M5 and M6 are
designed to give I5 = 180μA and M7 is designed to give I7 = 400μA.
The dominant pole is gm3/Cout.
Μ6
060711-01
CMOS Analog Circuit Design © P.E. Allen - 2010
- 11. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-21
Ex. 270-3 – Continued
Cout = Cgs3+Cbs3+Cbd1+Cbd5+Cgd1+Cgd5+Cgs1(next stage) Cgs3 + Cgs1
Using Cox = 60.6x10-4 F/m2, we get,
Cout (2.5+0.25)x10-12 m2x 60.6x10-4 F/m2 = 16.7fF Cout 20fF
gm3 = 2·120·1·20 μS = 69.3μS
Dominant pole 69.3μS/20fF = 34.65x108 rads/sec. f-3dB = 551MHz
The bandwidth of three identical cascaded amplifiers giving a low-frequency gain of
60dB would have a f-3dB of
f-3dB(Overall) = f-3dB 21/3-1 = 551MHz (0.5098) = 281MHz.
Pdiss = 3mW
-60dB/dec.
-40dB/dec.
-20dB/dec.
log10(f)
060711-02
dB
60
40
20
0
3 cascaded stages
2 cascaded stages
Single stage
551MHz
281MHz
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-22
A 71 MHz CMOS Programmable Gain Amplifier†
Uses 3 ac-coupled stages.
First stage (0-20dB, common gate for impedance matching and NF):
vout
VDD
vout
CMFB
VBP
VBN
2dB 0dB
VB1
vin
0dB 2dB
VB1
vin
M2 M2
M3
M2dB M0dB M0dB M2dB
Fig. 7.2-137A
Rin = 330 to match source driving requirement
All current sinks are identical for the differential switches.
Dominant pole at 150MHz.
† P. Orsatti, F. Piazza, and Q. Huang, “A 71 MHz CMOS IF-Basdband Strip for GSM, IEEE JSSC, vol. 35, No. 1, Jan. 2000, pp. 104-108.
CMOS Analog Circuit Design © P.E. Allen - 2010
- 12. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-23
A 71 MHz PGA – Continued
Second stage (-10dB to 20dB):
CMFB
VDD
2dB 0dB 0dB 2dB
VBP
M5
M6
M5
M6
vout vout
VBN
M2 M2
M4
0dB
Load -10dB
M4
vin vin
M3
-10dB
M2 M2
M3
-10dB
Fig. 7.2-137A
M2dB M0dB
Load
M2dB
M0dB
Dominant pole is also at 150MHz
For VDD = 2.5V, at 60dB gain, the total current is 2.6mA
IIP3 +1dBm
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-24
CASCADED AMPLIFIERS USING CURRENT FEEDBACK AMPLIFIERS
Advantages of Using Current Feedback
Why current feedback?
• Higher GB
• Less voltage swing more dynamic range
What is a current amplifier?
Requirements:
io = Ai(i1-i2)
Ri1 = Ri2 = 0
Ro =
Ri2
Ri1
Ideal source and load requirements:
Rsource =
RLoad = 0
i2
i1
io
-
+
Current
Amplifier
Ro
Fig. 7.2-8A
CMOS Analog Circuit Design © P.E. Allen - 2010
- 13. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-25
Bandwidth Advantage of a Current Feedback Amplifier
Consider the inverting voltage amplifier
shown using a current amplifier with
negative current feedback:
The output current, io, of the current
amplifier can be written as
io = Ai(s)(i1-i2) = -Ai(s)(iin + io)
The closed-loop current gain, io/iin, can be
found as
io
iin =
-Ai(s)
1+Ai(s)
vin
io
R1 iin R2
i2 io
+ -
+ -
i1
vout
Current
Amplifier
Voltage
Fig. 7.2-9 Buffer
However, vout = ioR2 and vin = iinR1. Solving for the voltage gain, vout/vin gives
vout
vin =
ioR2
iinR1 =
-R2
R1
Ai(s)
1+Ai(s)
If Ai(s) =
Ao
(s/A)+1 , then
vout
vout
vin =
-R2
R1
Ao
1+Ao
A(1+Ao)
s+A(1+Ao) Av(0) =
-R2Ao
R1(1+Ao) and -3dB=A(1+Ao)
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-26
Bandwidth Advantage of a Current Feedback Amplifier - Continued
The unity-gainbandwidth is,
GB = |Av(0)| -3dB =
R2Ao
R1(1+Ao) · A(1+Ao) =
R2
R1 Ao·A =
R2
R1 GBi
where GBi is the unity-gainbandwidth of the current amplifier.
Note that if GBi is constant, then increasing R2/R1 (the voltage gain) increases GB.
Illustration:
Magnitude dB
Ao dB
1+Ao
Ao dB K
1+Ao
Ao dB
Voltage Amplifier, R2 K
R2
R1
Voltage Amplifier,
= K
Current Amplifier
ωA
R1
1
R2
R1
GB1 GB2
0dB
log10(ω)
Fig. 7.2-10
(1+Ao)ωA
GBi
Note that GB2 GB1 GBi
The above illustration assumes that the GB of the voltage amplifier realizing the voltage
buffer is greater than the GB achieved from the above method.
CMOS Analog Circuit Design © P.E. Allen - 2010
- 14. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-27
Current Feedback Amplifier
In a current mirror implementation of the current amplifier, it is difficult to make the input
resistance sufficiently small compared to R1.
This problem can be solved using a transconductance input stage shown in the following
block diagram:
Vout
060711-04
GM
RF
Ai
+
−
Vin
Vout
Vin =
-GMRFAi
1+Ai
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-28
Differential Implementation of the Current Feedback Amplifier
VDD
+ Vin
M1 M2
060712-01
Rin
RF R + V − F out
VPB1
VPB2
Vin
VNB2
1:n 1:n
-
Iin =
gm1
1+0.5gm1Rin
+-Vin
Vin
-
2 and Vout =
n(2RF)
1+n Iin
Vout
Vin
2nRF
Rin
CMOS Analog Circuit Design © P.E. Allen - 2010
- 15. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-29
A 20dB Voltage Amplifier using a Current Amplifier
The following circuit is a programmable voltage amplifier with up to 20dB gain:
vin+ vin-
M1
VDD
R1
R2 R2
+ vout -
+1 +1
VSS
VBias
M2
x2
= 1/4
x4
=1/8
x2
= 1/4
x4
=1/8
x1
=1/2
x1
=1/2
Fig. 7.2-135A
R1 and the current mirrors are used for gain variation while R2 is fixed.
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-30
Programmability of the Previous Stage
Input OTA:
Changes GM in 6dB steps.
CMOS Analog Circuit Design © P.E. Allen - 2010
- 16. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-31
Programmability of the Voltage Stage – Cont’d
Current Amplifier:
Changes RF in 2dB steps
(RF20dB = 2.1k, RF18dB = 1.6k, RF16dB = 1.3k, and RF14dB = 5k.)
RFTotal = 10k.
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-32
Frequency Response of the Current Feedback PGA Stage
0.5pF load:
CMOS Analog Circuit Design © P.E. Allen - 2010
- 17. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-33
Frequency Response of the Entire 60dB PGA
Includes output buffer:
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-34
SUMMARY
• Increasing the GB of an op amp requires that the magnitude of all non-dominant poles
are much greater than GB from the origin of the complex frequency plane
• The practical limit of GB for an op amp is approximately 5-10 times less than the
magnitude of the smallest non-dominant pole ( 100MHz)
• To achieve high values of GB it is necessary to eliminate the non-dominant poles
(which come from parasitics) or increase the magnitude of the non-dominant poles
• The best way to achieve high-bandwidth amplifiers is to cascade high-bandwidth
voltage amplifiers
• If the gain of the high-bandwidth voltage amplifiers is well defined, then it is not
necessary to use negative feedback around the amplifier
• Amplifiers with well defined gains are obtainable with a -3dB bandwidth of 100MHz
CMOS Analog Circuit Design © P.E. Allen - 2010