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Lecture 270 – High Speed Op Amps (3/28/10) Page 270-1 
LECTURE 270 – HIGH SPEED OP AMPS 
LECTURE ORGANIZATION 
Outline 
• Extending the GB of conventional op amps 
• Cascade Amplifiers 
- Voltage amplifiers 
- Voltage amplifiers using current feedback 
• Summary 
CMOS Analog Circuit Design, 2nd Edition Reference 
Pages 368-384 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-2 
INCREASING THE GB OF OP AMPS 
What is the Influence of GB on the Frequency Response? 
The unity-gainbandwidth represents a limit in the trade-off between closed loop voltage 
gain and the closed-loop -3dB frequency. 
Example of a gain of -10 voltage amplifier: 
Magnitude 
|Avd(0)| dB 
20dB 
0dB 
Op amp frequency response 
Amplifier with a gain of -10 
log10(ω) 
ωA ω-3dB GB 
Fig. 7.2-1 
What defines the GB? 
We know that 
GB = 
gm 
C 
where gm is the transconductance that converts the input voltage to current and C is the 
capacitor that causes the dominant pole. 
This relationship assumes that all higher-order poles are greater than GB. 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-3 
What is the Limit of GB? 
The following illustrates what 
happens when the next higher pole is 
not greater than GB: 
For a two-stage op amp, the poles 
and zeros are: 
1.) Dominant pole p1 = 
-gm1 
Av(0)Cc 
2.) Output pole p2 = 
-gm6 
CL 
3.) Mirror pole p3 = 
Magnitude 
|Avd(0)| dB 
20dB 
0dB 
-gm3 
Cgs3+Cgs4 and z3 = 2p3 
4.) Nulling pole p4 = 
-1 
RzCI 
5.) Nulling zero z1 = 
-1 
RzCc-(Cc/gm6) 
Op amp frequency response 
Amplifier with a gain of -10 
log10(ω) 
Next higher pole 
-40dB/dec 
ωA ω-3dB GB 
Fig. 7.2-2 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-4 
Higher-Order Poles 
For reasonable phase margin, the smallest higher-order pole should be 2-3 times larger 
than GB if all other higher-order poles are larger than 10GB. 
Smallest non-dominant 
Larger non-dominant 
poles 
-10GB -GB 
060709-01 
Dominant 
pole 
pole 
Av(0) dB 
0dB 10GB 
GB 
GB 
Av(0) 
log10ω 
If the higher-order poles are not greater than 10GB, then the distance from GB to the 
smallest non-dominant pole should be increased for reasonable phase margin. 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-5 
Increasing the GB of a Two-Stage Op Amp 
1.) Use the nulling zero to cancel the closest pole beyond the dominant pole. 
2.) The maximum GB would be equal to the magnitude of the second closest pole beyond 
the dominant pole. 
3.) Adjust the dominant pole so that 2.2GB  (second closest pole beyond the dominant 
pole) 
Illustration which assumes that p2 is the next closest pole beyond the dominant pole: 
-p3 -p4 -p2 = z1 -p1 
Magnitude 
|Avd(0)| dB 
0dB 
jω 
-p1 
New Old 
log10(ω) 
Fig. 7.2-3 
Old 
GB 
GB 
Increase 
Old New 
|p1| |p2| 
-40dB/dec 
|p4||p3| 
New 
GB 
-60dB/dec 
-80dB/dec 
σ 
Before cancelling 
p2 by z1 and 
increasing p1 
|p1| 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-6 
Example 270-1 - Increasing the GB of the Op Amp Designed in Ex. 230-1 
Use the two-stage op amp designed 
in Example 230-1 and apply the above 
approach to increase the gainbandwidth 
as much as possible. Use the capacitor 
values in the table shown along with Cox 
= 6fF/μm2. 
Solution 
1.) First find the values of p2, p3, and p4. 
a.) From Ex. 230-2, we see that 
p2 = -95x106 rads/sec. 
b.) p3 was found in Ex. 6.3-1 as 
p3 = -1.25x109 rads/sec. (also 
there is a zero at -2.5x109 
rads/sec.) 
- 
15μm 
1μm 
vin 
+ 
VDD = 2.5V 
M3 M4 
15μm 
1μm 
M1 M2 
3μm 
1μm 
M5 
M6 
Cc = 3pF 
95μA 
M7 
vout 
3μm 
1μm 
30μA 
4.5μm 
1μm 
VSS = -2.5V 
CL = 
10pF 
M8 
30μA 
4.5μm 
1μm 
94μm 
1μm 
14μm 
1μm 
Fig. 7.2-3A 
Rz 
Type P-Channel N-Channel Units 
CGSO 220 10-12 220  10-12 F/m 
CGDO 220  10-12 220  10-12 F/m 
CGBO 700  10-12 700  10-12 F/m 
CJ 560  10-6 770  10-6 F/m2 
CJSW 350  10-12 380  10-12 F/m 
MJ 0.5 0.5 
MJSW 0.35 0.38 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-7 
Example 270-1 - Continued 
(c.) To find p4, we must find CI which is the output capacitance of the first stage of the 
op amp. CI consists of the following capacitors, 
CI = Cbd2 + Cbd4 + Cgs6 + Cgd2 + Cgd4 
For Cbd2 the width is 1.5μm  L1+L2+L3=3μm  AS/AD=4.5μm2 and PS/PD=9μm. 
For Cbd4 the width is 15μm  L1+L2+L3=3μm  AS/AD=45μm2 and PS/PD=36μm. 
From Table 3.2-1: 
Cbd2 = (4.5μm2)(770x10-6F/m2) + (9μm)(380x10-12F/m) = 3.47fF+3.42fF  6.89fF 
Cbd4 = (45μm2)(560x10-6F/m2) + (36μm)(350x10-12F/m) = 25.2fF+12.6F  37.8fF 
Cgs6 in saturation is, 
Cgs6=CGDO·W6+0.67(CoxW6L6)=(220x10-12)(85x10-6)+(0.67)(6x10-15)(42.5) 
= 18.7fF + 255fF = 273.7fF 
Cgd2 = 220x10-12x1.5μm = 0.33fF and Cgd4 = 220x10-12x15μm = 3.3fF 
Therefore, CI = 6.9fF + 37.8fF + 273.7fF + 0.33fF + 3.3fF = 322fF. Although Cbd2 and 
Cbd4 will be reduced with a reverse bias, let us use these values to provide a margin. 
Thus let CI be 322fF. 
In Ex. 230-2, Rz was 4.564k which gives p4 = - 0.680x109 rads/sec. 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-8 
Example 270-1 - Continued 
Therefore, the roots are: 
jω 
p2 = -0.095G New GB 
σ x 109 
z3 = -2.5G p3 = -1.25G p4 = -0.68G 
-3 -2 -1 
070503-01 
When p2 is cancelled, the next smaller pole is p4 which will define the new GB. 2.) 
Using the nulling zero, z1, to cancel p2, gives p4 as the next smallest pole. 
For 60° phase margin GB = |p4|/2.2 if the next smallest pole is more than 10GB. 
 GB = 0.680x109/2.2 = 0.309x109 rads/sec. or 49.2MHz. 
This value of GB is designed from the relationship that GB = gm1/Cc. Assuming gm1 is 
constant, then Cc = gm1/GB = (94.25x10-6)/(0.309x109) = 307fF. It might be useful to 
increase gm1 in order to keep Cc above the surrounding parasitic capacitors (Cgd6 = 
18.7fF). The success of this method assumes that there are no other roots with a 
magnitude smaller than 10GB. 
The result of this example is to increase the GB from 5MHz to 49MHz. 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-9 
Example 270-2 - Increasing the GB of the Folded Cascode Op Amp of Ex. 240-4 
Use the folded-cascode op amp designed in 
Example 240-4 and apply the above approach to 
increase the gainbandwidth as much as possible. 
Assume that the drain/source areas are equal to 
2μm times the width of the transistor and that all 
voltage dependent capacitors are at zero voltage. 
Solution 
The poles of the folded cascode op amp are: 
pA  
-1 
RACA 
(the pole at the source of M6 ) 
pB  
-1 
RBCB 
(the pole at the source of M7) 
p6  
-gm10 
C6 
(the pole at the drain of M6) 
p8  
-gm8rds8gm10 
C8 
(the pole at the source of M8) 
p9  
-gm9 
C9 (the pole at the source of M9) 
VDD 
I4 I5 
VPB2 RB 
M10 M11 
vOU 
CL 
060628-04 
VPB1 
M4 M5 
RAI 
6 
I7 
M6 M7 
VNB2 
M8 M9 
+ 
− 
vIN 
I1 I2 
VNB1 
M1 M2 
M3 
I3 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-10 
Example 270-2 - Continued 
Let us evaluate each of these poles. 
1.) For pA, the resistance RA is approximately equal to gm6 and CA is given as 
CA = Cgs6 + Cbd1 + Cgd1 + Cbd4 + Cbs6 + Cgd4 
From Ex. 240-4, gm6 = 774.6μS and capacitors giving CA are found as, 
Cgs6 = (220x10-12·80x10-6) + (0.67)(80μm·0.5μm·6fF/μm2) = 177.6fF 
Cbd1 = (770x10-6)(16.5x10-6·2x10-6) + (380x10-12)(37x10-6) = 39.5fF 
Cgd1 = (220x10-12·16.5x10-6) = 3.6fF 
Cbd4 = Cbs6 = (560x10-6)(80x10-6·2x10-6) + (350x10-12)(2·82x10-6) = 147fF 
and 
Cgd4 = (220x10-12)(80x10-6) = 17.6fF 
Therefore, 
CA = 177.6fF + 39.5fF + 3.6fF + 147fF + 17.6fF + 147fF = 0.532pF 
Thus, 
pA = 
-774.6x10-6 
0.532x10-12 = -1.456x109 rads/sec. 
2.) For the pole, pB, the capacitance connected to this node is 
CB = Cgd2 + Cbd2 + Cgs7 + Cgd5 + Cbd5 + Cbs7 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-11 
Example 270-2 - Continued 
The various capacitors above are found as 
Cgd2 = (220x10-12·16.5x10-6) = 3.6fF 
Cbd2 = (770x10-6)(16.5x10-6·2x10-6) + (380x10-12)(37x10-6) = 39.5fF 
Cgs7 = (220x10-12·80x10-6) + (0.67)(80μm·0.5μm·6fF/μm2) = 177.6fF 
Cgd5 = (220x10-12)(80x10-6) = 17.6fF 
and 
Cbd5 = Cbs7 = (560x10-6)(80x10-6·2x10-6) + (350x10-12)(2·82x10-6) = 147fF 
The value of CB is the same as CA and gm6 is assumed to be the same as gm7 giving pB = 
pA = -1.456x109 rads/sec. 
3.) For the pole, p6, the capacitance connected to this node is 
C6= Cbd6 + Cgd6 + Cgs10 + Cgs11+ Cbd8 + Cgd8 
The various capacitors above are found as 
Cbd6 = (560x10-6)(80x10-6·2x10-6) + (350x10-12)(2·82x10-6) = 147fF 
Cgs10 = Cgs11 = (220x10-12·10x10-6) + (0.67)(10μm·0.5μm·6fF/μm2) = 22.2fF 
Cbd8 = (770x10-6)(10x10-6·2x10-6) + (380x10-12)(2·12x10-6) = 24.5fF 
Cgd8 = (220x10-12)(10x10-6) = 2.2fF and Cgd6 = Cgd5 =17.6fF 
Therefore, 
C6 = 147fF + 17.6fF + 22.2fF + 22.2fF + 2.2fF + 17.6fF = 0.229pF 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-12 
Example 270-2 - Continued 
From Ex. 240-4, gm6 = 774.6x10-6. Therefore, p6, can be expressed as 
-p6 = 
774.6x10-6 
0.229x10-12 = 3.38x109 rads/sec. 
4.) Next, we consider the pole, p8. The capacitance connected to this node is 
C8= Cbd10 + Cgd10 + Cgs8 + Cbs8 
These capacitors are given as, 
Cbs8 = Cbd10 = (770x10-6)(10x10-6·2x10-6) + (380x10-12)(2·12x10-6) = 24.5fF 
Cgs8 = (220x10-12·10x10-6) + (0.67)(10μm·0.5μm·6fF//μm2) = 22.2fF 
and 
Cgd10 = (220x10-12)(10x10-6) = 2.2fF 
The capacitance C8 is equal to 
C8 = 24.5fF + 2.2fF + 22.2fF + 24.5fF = 73.4FF 
Using the values of Ex. 240-4 of 600μS, the pole p8 is found as, 
-p8 = gm8rds8 gm10/C8 = -600μS·600μS·/4.5μS·73.4fF = -1090x109 rads/sec. 
5.) The capacitance for the pole at p9 is identical with C8. Therefore, since gm9 is 
600μS, the pole p9 is -p9 = 8.17x109 rads/sec. 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-13 
Example 270-2 - Continued 
The poles are summarized below: 
pA = -1.456x109 rads/sec pB = -1.456x109 rads/sec p6 = -3.38x109 rads/sec 
p8 = -1090x109 rads/sec p9 = -8.17x109 rads/sec 
jω 
New GB 
= 0.2x109 
σ x 109 
p8 = -1090G 
p9 = -8.17G p6 = -3.38G 
pA = pB 
= -1.456G 
-3 -2 -1 
-8 -7 -6 -5 -4 
070503-02 
The smallest of these poles is pA or pB. Since p6 is not much larger than pA or pB, we 
will find the new GB by dividing pA or pB by 4 (which is guess rather than 2.2) to get 
364x106 rads/sec. Thus the new GB will be 364/2 or 58MHz. 
Checking our guess gives a phase margin of, 
PM = 90° - 2tan-1(0.364/1.456) - tan-1(0.364/3.38) = 56° which is okay 
The magnitude of the dominant pole is given as 
pdominant = GB/Avd(0) = 364x106/3,678 = 99,000 rads/sec. 
The value of load capacitor that will give this pole is 
CL = (pdominant·Rout)-1 = (99x103·7.44M)-1 = 1.36pF 
Therefore, the new GB = 58MHz compared with the old GB = 10MHz. 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-14 
Elimination of Higher-Order Poles 
The minimum circuitry for a cascode op amp is shown below: 
Non-dominant 
Pole 
vout 
CL 
Non-dominant 
Pole 
060710-01 
vin + VPB1 
VPB2 
Dominant Pole 
VNB2 
vin + VNB1 
VDD 
M4 
M3 
M2 
M1 
If the source-drain area between M1 and M2 and M3 and M4 can be minimized, the non-dominant 
poles will be quite large. 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-15 
Dynamically Biased, Push-Pull, Cascode Op Amp 
M4 
M3 
vout 
M2 
M1 
M8 
M7 
IB 
M6 
VDD 
φ1 φ2 
C1 
φ1 
C2 
φ2 
VSS 
M5 
vin+ 
φ2 
φ1 
+ 
- 
VB2 
vin- 
+ 
- 
VB1 
Fig.7.2-5 
Push-pull, cascode amplifier: M1-M2 and M3-M4 
Bias circuitry: M5-M6-C2 and M7-M8-C1 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-16 
Dynamically Biased, Push-Pull, Cascode Op Amp - Continued 
Operation: 
M8 
M7 
+ 
- 
VB2 
+ 
- 
VDD-VB2-vin+ 
IB vin+ 
M6 
VDD 
+ 
- 
vin+-VSS-VB1 
VSS 
C1 
M5 
C2 
+ 
- 
VB1 
M4 
M3 
vout 
M2 
M1 
VDD 
C1 
C2 
VSS 
VDD-VB2-(vin+-vin-) 
VDD-VB2-vin+ 
vin- 
+ 
- 
+ 
- 
vin+-VSS-VB1 
VSS+VB1-(vin+-vin-) 
Equivalent circuit during the φ1 clock period Equivalent circuit during the φ2 clock period. 
Fig. 7.2-6 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-17 
Dynamically Biased, Push-Pull, Cascode Op Amp - Continued 
This circuit will operate on both clock phases† . 
M4 
M3 
vout 
M2 
M1 
M8 
M7 
φ2 φ1 
φ1 
φ1 
+ 
VB2 
- 
vin- 
IB φ2 
M6 
VDD 
C4 
C3 
φ2 φ1 
φ1 φ2 
VSS 
C2 
C1 
M5 
vin+ 
φ2 
φ2 
φ1 
+ 
VB1 
- 
Fig. 7.2-7 
Performance (1.5μm CMOS): 
• 1.6mW dissipation 
• GB  130MHz (CL=2.2pF) 
• Settling time of 10ns (CL=10pF) 
This amplifier was used with a 
28.6MHz clock to realize a 5th-order 
switched capacitor filter having a 
cutoff frequency of 3.5MHz. 
† S. Masuda, et. al., “CMOS Sampled Differential Push-Pull Cascode Op Amp,” Proc. of 1984 International Symposium on Circuits and Systems, 
Montreal, Canada, May 1984, pp. 1211-12-14. 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-18 
CASCADED AMPLIFIERS USING VOLTAGE AMPLIFIERS 
Bandwidth of Cascaded Amplifiers 
Cascading of low-gain, wide-bandwidth amplifiers: 
Ao 
s/ω1+1 
Ao 
s/ω1+1 
Vin Vout 
060710-02 
Ao 
s/ω1+1 
A1 A2 An 
Ao 
s/ω1+1 
n 
n 
Overall gain is Ao 
-3dB frequency is, 
-3dB = 1 21/n-1 
If Ao = 10, 1 = 300x106 rads/sec. and n = 3, then 
Overall gain is 60dB and -3dB = 0.511 = 480x106 rads/sec.  76.5 MHz 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-19 
Voltage Amplifier Suitable for Cascading 
VPB1 VPB1 
Μ6 
060710-03 
VDD 
I5 I3 I4 I6 
Μ5 Μ3 Μ4 
V − out + 
+ 
− 
Vin 
Μ1 Μ2 
I1 I2 
VNB1 
I7 
Μ7 
Voltage Gain: 
Vout 
Vin = 
gm1 
gm3 = 
Kn'(W1/L1)(I3+I5) 
Kp'(W3/L3)I3 
-3dB  
gm3 
Cgs1 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-20 
Ex. 270-3 - Design of a Voltage Amplifier for Cascading 
Design the previous voltage amplifier for a gain of Ao = 10 and a power dissipation of no 
more than 1mW. The design should permit Ao to be well defined. What is the -3dB for 
this amplifier and what would be the -3dB for a cascade of three identical amplifiers? 
Solution 
To enhance the accuracy of the gain, we replace M3 
and M4 with NMOS transistors to avoid the 
variation of the transconductance parameter. This 
assumes a p-well technology to avoid bulk effects. 
The gain of 10 requires, 
W1 
L1 (I3+I5) = 100 
W3 
L3 I3 
VDD 
VPB1 VPB1 
I5 I3 I4 I6 
Μ5 Μ3 Μ4 
Vout + − 
+ 
− 
Vin 
Μ1 Μ2 
I1 I2 
VNB1 
I7 
Μ7 
If VDD = 2.5V, then 2(I3+I5)·2.5V = 1000μW. 
Therefore, I3+I5 = 200μA. Let I3 = 20μA and W1/L1 = 10W3/L3. 
Choose W1/L1 = 5μm/0.5μm which gives W3/L3 = 0.5μm/0.5μm. M5 and M6 are 
designed to give I5 = 180μA and M7 is designed to give I7 = 400μA. 
The dominant pole is gm3/Cout. 
Μ6 
060711-01 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-21 
Ex. 270-3 – Continued 
Cout = Cgs3+Cbs3+Cbd1+Cbd5+Cgd1+Cgd5+Cgs1(next stage)  Cgs3 + Cgs1 
Using Cox = 60.6x10-4 F/m2, we get, 
Cout  (2.5+0.25)x10-12 m2x 60.6x10-4 F/m2 = 16.7fF  Cout  20fF 
gm3 = 2·120·1·20 μS = 69.3μS 
 Dominant pole  69.3μS/20fF = 34.65x108 rads/sec.  f-3dB = 551MHz 
The bandwidth of three identical cascaded amplifiers giving a low-frequency gain of 
60dB would have a f-3dB of 
f-3dB(Overall) = f-3dB 21/3-1 = 551MHz (0.5098) = 281MHz. 
Pdiss = 3mW 
-60dB/dec. 
-40dB/dec. 
-20dB/dec. 
log10(f) 
060711-02 
dB 
60 
40 
20 
0 
3 cascaded stages 
2 cascaded stages 
Single stage 
551MHz 
281MHz 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-22 
A 71 MHz CMOS Programmable Gain Amplifier† 
Uses 3 ac-coupled stages. 
First stage (0-20dB, common gate for impedance matching and NF): 
vout 
VDD 
vout 
CMFB 
VBP 
VBN 
2dB 0dB 
VB1 
vin 
0dB 2dB 
VB1 
vin 
M2 M2 
M3 
M2dB M0dB M0dB M2dB 
Fig. 7.2-137A 
Rin = 330 to match source driving requirement 
All current sinks are identical for the differential switches. 
Dominant pole at 150MHz. 
† P. Orsatti, F. Piazza, and Q. Huang, “A 71 MHz CMOS IF-Basdband Strip for GSM, IEEE JSSC, vol. 35, No. 1, Jan. 2000, pp. 104-108. 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-23 
A 71 MHz PGA – Continued 
Second stage (-10dB to 20dB): 
CMFB 
VDD 
2dB 0dB 0dB 2dB 
VBP 
M5 
M6 
M5 
M6 
vout vout 
VBN 
M2 M2 
M4 
0dB 
Load -10dB 
M4 
vin vin 
M3 
-10dB 
M2 M2 
M3 
-10dB 
Fig. 7.2-137A 
M2dB M0dB 
Load 
M2dB 
M0dB 
Dominant pole is also at 150MHz 
For VDD = 2.5V, at 60dB gain, the total current is 2.6mA 
IIP3  +1dBm 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-24 
CASCADED AMPLIFIERS USING CURRENT FEEDBACK AMPLIFIERS 
Advantages of Using Current Feedback 
Why current feedback? 
• Higher GB 
• Less voltage swing  more dynamic range 
What is a current amplifier? 
Requirements: 
io = Ai(i1-i2) 
Ri1 = Ri2 = 0 
Ro =  
Ri2 
Ri1 
Ideal source and load requirements: 
Rsource =  
RLoad = 0 
i2 
i1 
io 
- 
+ 
Current 
Amplifier 
Ro 
Fig. 7.2-8A 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-25 
Bandwidth Advantage of a Current Feedback Amplifier 
Consider the inverting voltage amplifier 
shown using a current amplifier with 
negative current feedback: 
The output current, io, of the current 
amplifier can be written as 
io = Ai(s)(i1-i2) = -Ai(s)(iin + io) 
The closed-loop current gain, io/iin, can be 
found as 
io 
iin = 
-Ai(s) 
1+Ai(s) 
vin 
io 
R1 iin R2 
i2 io 
+ - 
+ - 
i1 
vout 
Current 
Amplifier 
Voltage 
Fig. 7.2-9 Buffer 
However, vout = ioR2 and vin = iinR1. Solving for the voltage gain, vout/vin gives 
vout 
vin = 
ioR2 
iinR1 =  
-R2 
R1  
 
Ai(s) 
1+Ai(s) 
 
If Ai(s) = 
Ao 
(s/A)+1 , then 
vout 
vout 
vin =  
-R2 
R1  
 
Ao 
1+Ao  
 
A(1+Ao) 
s+A(1+Ao)  Av(0) = 
 
-R2Ao 
R1(1+Ao) and -3dB=A(1+Ao) 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-26 
Bandwidth Advantage of a Current Feedback Amplifier - Continued 
The unity-gainbandwidth is, 
GB = |Av(0)| -3dB = 
R2Ao 
R1(1+Ao) · A(1+Ao) = 
R2 
R1 Ao·A = 
R2 
R1 GBi 
where GBi is the unity-gainbandwidth of the current amplifier. 
Note that if GBi is constant, then increasing R2/R1 (the voltage gain) increases GB. 
Illustration: 
Magnitude dB 
Ao dB 
1+Ao 
Ao dB K 
1+Ao 
Ao dB 
Voltage Amplifier, R2  K 
R2 
R1 
Voltage Amplifier, 
= K 
Current Amplifier 
ωA 
R1 
1 
R2 
R1 
GB1 GB2 
0dB 
log10(ω) 
Fig. 7.2-10 
(1+Ao)ωA 
GBi 
Note that GB2  GB1  GBi 
The above illustration assumes that the GB of the voltage amplifier realizing the voltage 
buffer is greater than the GB achieved from the above method. 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-27 
Current Feedback Amplifier 
In a current mirror implementation of the current amplifier, it is difficult to make the input 
resistance sufficiently small compared to R1. 
This problem can be solved using a transconductance input stage shown in the following 
block diagram: 
Vout 
060711-04 
GM 
RF 
Ai 
+ 
− 
Vin 
Vout 
Vin = 
-GMRFAi 
1+Ai 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-28 
Differential Implementation of the Current Feedback Amplifier 
VDD 
+ Vin 
M1 M2 
060712-01 
Rin 
RF R + V − F out 
VPB1 
VPB2 
Vin 
VNB2 
1:n 1:n 
- 
Iin = 
gm1 
1+0.5gm1Rin  
 
+-Vin 
Vin 
- 
2 and Vout = 
n(2RF) 
1+n Iin 
Vout 
Vin  
2nRF 
Rin 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-29 
A 20dB Voltage Amplifier using a Current Amplifier 
The following circuit is a programmable voltage amplifier with up to 20dB gain: 
vin+ vin- 
M1 
VDD 
R1 
R2 R2 
+ vout - 
+1 +1 
VSS 
VBias 
M2 
x2 
= 1/4 
x4 
=1/8 
x2 
= 1/4 
x4 
=1/8 
x1 
=1/2 
x1 
=1/2 
Fig. 7.2-135A 
R1 and the current mirrors are used for gain variation while R2 is fixed. 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-30 
Programmability of the Previous Stage 
Input OTA: 
Changes GM in 6dB steps. 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-31 
Programmability of the Voltage Stage – Cont’d 
Current Amplifier: 
Changes RF in 2dB steps 
(RF20dB = 2.1k, RF18dB = 1.6k, RF16dB = 1.3k, and RF14dB = 5k.) 
RFTotal = 10k. 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-32 
Frequency Response of the Current Feedback PGA Stage 
0.5pF load: 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-33 
Frequency Response of the Entire 60dB PGA 
Includes output buffer: 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 270 – High Speed Op Amps (3/28/10) Page 270-34 
SUMMARY 
• Increasing the GB of an op amp requires that the magnitude of all non-dominant poles 
are much greater than GB from the origin of the complex frequency plane 
• The practical limit of GB for an op amp is approximately 5-10 times less than the 
magnitude of the smallest non-dominant pole ( 100MHz) 
• To achieve high values of GB it is necessary to eliminate the non-dominant poles 
(which come from parasitics) or increase the magnitude of the non-dominant poles 
• The best way to achieve high-bandwidth amplifiers is to cascade high-bandwidth 
voltage amplifiers 
• If the gain of the high-bandwidth voltage amplifiers is well defined, then it is not 
necessary to use negative feedback around the amplifier 
• Amplifiers with well defined gains are obtainable with a -3dB bandwidth of 100MHz 
CMOS Analog Circuit Design © P.E. Allen - 2010

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  • 1. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-1 LECTURE 270 – HIGH SPEED OP AMPS LECTURE ORGANIZATION Outline • Extending the GB of conventional op amps • Cascade Amplifiers - Voltage amplifiers - Voltage amplifiers using current feedback • Summary CMOS Analog Circuit Design, 2nd Edition Reference Pages 368-384 CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-2 INCREASING THE GB OF OP AMPS What is the Influence of GB on the Frequency Response? The unity-gainbandwidth represents a limit in the trade-off between closed loop voltage gain and the closed-loop -3dB frequency. Example of a gain of -10 voltage amplifier: Magnitude |Avd(0)| dB 20dB 0dB Op amp frequency response Amplifier with a gain of -10 log10(ω) ωA ω-3dB GB Fig. 7.2-1 What defines the GB? We know that GB = gm C where gm is the transconductance that converts the input voltage to current and C is the capacitor that causes the dominant pole. This relationship assumes that all higher-order poles are greater than GB. CMOS Analog Circuit Design © P.E. Allen - 2010
  • 2. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-3 What is the Limit of GB? The following illustrates what happens when the next higher pole is not greater than GB: For a two-stage op amp, the poles and zeros are: 1.) Dominant pole p1 = -gm1 Av(0)Cc 2.) Output pole p2 = -gm6 CL 3.) Mirror pole p3 = Magnitude |Avd(0)| dB 20dB 0dB -gm3 Cgs3+Cgs4 and z3 = 2p3 4.) Nulling pole p4 = -1 RzCI 5.) Nulling zero z1 = -1 RzCc-(Cc/gm6) Op amp frequency response Amplifier with a gain of -10 log10(ω) Next higher pole -40dB/dec ωA ω-3dB GB Fig. 7.2-2 CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-4 Higher-Order Poles For reasonable phase margin, the smallest higher-order pole should be 2-3 times larger than GB if all other higher-order poles are larger than 10GB. Smallest non-dominant Larger non-dominant poles -10GB -GB 060709-01 Dominant pole pole Av(0) dB 0dB 10GB GB GB Av(0) log10ω If the higher-order poles are not greater than 10GB, then the distance from GB to the smallest non-dominant pole should be increased for reasonable phase margin. CMOS Analog Circuit Design © P.E. Allen - 2010
  • 3. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-5 Increasing the GB of a Two-Stage Op Amp 1.) Use the nulling zero to cancel the closest pole beyond the dominant pole. 2.) The maximum GB would be equal to the magnitude of the second closest pole beyond the dominant pole. 3.) Adjust the dominant pole so that 2.2GB (second closest pole beyond the dominant pole) Illustration which assumes that p2 is the next closest pole beyond the dominant pole: -p3 -p4 -p2 = z1 -p1 Magnitude |Avd(0)| dB 0dB jω -p1 New Old log10(ω) Fig. 7.2-3 Old GB GB Increase Old New |p1| |p2| -40dB/dec |p4||p3| New GB -60dB/dec -80dB/dec σ Before cancelling p2 by z1 and increasing p1 |p1| CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-6 Example 270-1 - Increasing the GB of the Op Amp Designed in Ex. 230-1 Use the two-stage op amp designed in Example 230-1 and apply the above approach to increase the gainbandwidth as much as possible. Use the capacitor values in the table shown along with Cox = 6fF/μm2. Solution 1.) First find the values of p2, p3, and p4. a.) From Ex. 230-2, we see that p2 = -95x106 rads/sec. b.) p3 was found in Ex. 6.3-1 as p3 = -1.25x109 rads/sec. (also there is a zero at -2.5x109 rads/sec.) - 15μm 1μm vin + VDD = 2.5V M3 M4 15μm 1μm M1 M2 3μm 1μm M5 M6 Cc = 3pF 95μA M7 vout 3μm 1μm 30μA 4.5μm 1μm VSS = -2.5V CL = 10pF M8 30μA 4.5μm 1μm 94μm 1μm 14μm 1μm Fig. 7.2-3A Rz Type P-Channel N-Channel Units CGSO 220 10-12 220 10-12 F/m CGDO 220 10-12 220 10-12 F/m CGBO 700 10-12 700 10-12 F/m CJ 560 10-6 770 10-6 F/m2 CJSW 350 10-12 380 10-12 F/m MJ 0.5 0.5 MJSW 0.35 0.38 CMOS Analog Circuit Design © P.E. Allen - 2010
  • 4. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-7 Example 270-1 - Continued (c.) To find p4, we must find CI which is the output capacitance of the first stage of the op amp. CI consists of the following capacitors, CI = Cbd2 + Cbd4 + Cgs6 + Cgd2 + Cgd4 For Cbd2 the width is 1.5μm L1+L2+L3=3μm AS/AD=4.5μm2 and PS/PD=9μm. For Cbd4 the width is 15μm L1+L2+L3=3μm AS/AD=45μm2 and PS/PD=36μm. From Table 3.2-1: Cbd2 = (4.5μm2)(770x10-6F/m2) + (9μm)(380x10-12F/m) = 3.47fF+3.42fF 6.89fF Cbd4 = (45μm2)(560x10-6F/m2) + (36μm)(350x10-12F/m) = 25.2fF+12.6F 37.8fF Cgs6 in saturation is, Cgs6=CGDO·W6+0.67(CoxW6L6)=(220x10-12)(85x10-6)+(0.67)(6x10-15)(42.5) = 18.7fF + 255fF = 273.7fF Cgd2 = 220x10-12x1.5μm = 0.33fF and Cgd4 = 220x10-12x15μm = 3.3fF Therefore, CI = 6.9fF + 37.8fF + 273.7fF + 0.33fF + 3.3fF = 322fF. Although Cbd2 and Cbd4 will be reduced with a reverse bias, let us use these values to provide a margin. Thus let CI be 322fF. In Ex. 230-2, Rz was 4.564k which gives p4 = - 0.680x109 rads/sec. CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-8 Example 270-1 - Continued Therefore, the roots are: jω p2 = -0.095G New GB σ x 109 z3 = -2.5G p3 = -1.25G p4 = -0.68G -3 -2 -1 070503-01 When p2 is cancelled, the next smaller pole is p4 which will define the new GB. 2.) Using the nulling zero, z1, to cancel p2, gives p4 as the next smallest pole. For 60° phase margin GB = |p4|/2.2 if the next smallest pole is more than 10GB. GB = 0.680x109/2.2 = 0.309x109 rads/sec. or 49.2MHz. This value of GB is designed from the relationship that GB = gm1/Cc. Assuming gm1 is constant, then Cc = gm1/GB = (94.25x10-6)/(0.309x109) = 307fF. It might be useful to increase gm1 in order to keep Cc above the surrounding parasitic capacitors (Cgd6 = 18.7fF). The success of this method assumes that there are no other roots with a magnitude smaller than 10GB. The result of this example is to increase the GB from 5MHz to 49MHz. CMOS Analog Circuit Design © P.E. Allen - 2010
  • 5. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-9 Example 270-2 - Increasing the GB of the Folded Cascode Op Amp of Ex. 240-4 Use the folded-cascode op amp designed in Example 240-4 and apply the above approach to increase the gainbandwidth as much as possible. Assume that the drain/source areas are equal to 2μm times the width of the transistor and that all voltage dependent capacitors are at zero voltage. Solution The poles of the folded cascode op amp are: pA -1 RACA (the pole at the source of M6 ) pB -1 RBCB (the pole at the source of M7) p6 -gm10 C6 (the pole at the drain of M6) p8 -gm8rds8gm10 C8 (the pole at the source of M8) p9 -gm9 C9 (the pole at the source of M9) VDD I4 I5 VPB2 RB M10 M11 vOU CL 060628-04 VPB1 M4 M5 RAI 6 I7 M6 M7 VNB2 M8 M9 + − vIN I1 I2 VNB1 M1 M2 M3 I3 CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-10 Example 270-2 - Continued Let us evaluate each of these poles. 1.) For pA, the resistance RA is approximately equal to gm6 and CA is given as CA = Cgs6 + Cbd1 + Cgd1 + Cbd4 + Cbs6 + Cgd4 From Ex. 240-4, gm6 = 774.6μS and capacitors giving CA are found as, Cgs6 = (220x10-12·80x10-6) + (0.67)(80μm·0.5μm·6fF/μm2) = 177.6fF Cbd1 = (770x10-6)(16.5x10-6·2x10-6) + (380x10-12)(37x10-6) = 39.5fF Cgd1 = (220x10-12·16.5x10-6) = 3.6fF Cbd4 = Cbs6 = (560x10-6)(80x10-6·2x10-6) + (350x10-12)(2·82x10-6) = 147fF and Cgd4 = (220x10-12)(80x10-6) = 17.6fF Therefore, CA = 177.6fF + 39.5fF + 3.6fF + 147fF + 17.6fF + 147fF = 0.532pF Thus, pA = -774.6x10-6 0.532x10-12 = -1.456x109 rads/sec. 2.) For the pole, pB, the capacitance connected to this node is CB = Cgd2 + Cbd2 + Cgs7 + Cgd5 + Cbd5 + Cbs7 CMOS Analog Circuit Design © P.E. Allen - 2010
  • 6. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-11 Example 270-2 - Continued The various capacitors above are found as Cgd2 = (220x10-12·16.5x10-6) = 3.6fF Cbd2 = (770x10-6)(16.5x10-6·2x10-6) + (380x10-12)(37x10-6) = 39.5fF Cgs7 = (220x10-12·80x10-6) + (0.67)(80μm·0.5μm·6fF/μm2) = 177.6fF Cgd5 = (220x10-12)(80x10-6) = 17.6fF and Cbd5 = Cbs7 = (560x10-6)(80x10-6·2x10-6) + (350x10-12)(2·82x10-6) = 147fF The value of CB is the same as CA and gm6 is assumed to be the same as gm7 giving pB = pA = -1.456x109 rads/sec. 3.) For the pole, p6, the capacitance connected to this node is C6= Cbd6 + Cgd6 + Cgs10 + Cgs11+ Cbd8 + Cgd8 The various capacitors above are found as Cbd6 = (560x10-6)(80x10-6·2x10-6) + (350x10-12)(2·82x10-6) = 147fF Cgs10 = Cgs11 = (220x10-12·10x10-6) + (0.67)(10μm·0.5μm·6fF/μm2) = 22.2fF Cbd8 = (770x10-6)(10x10-6·2x10-6) + (380x10-12)(2·12x10-6) = 24.5fF Cgd8 = (220x10-12)(10x10-6) = 2.2fF and Cgd6 = Cgd5 =17.6fF Therefore, C6 = 147fF + 17.6fF + 22.2fF + 22.2fF + 2.2fF + 17.6fF = 0.229pF CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-12 Example 270-2 - Continued From Ex. 240-4, gm6 = 774.6x10-6. Therefore, p6, can be expressed as -p6 = 774.6x10-6 0.229x10-12 = 3.38x109 rads/sec. 4.) Next, we consider the pole, p8. The capacitance connected to this node is C8= Cbd10 + Cgd10 + Cgs8 + Cbs8 These capacitors are given as, Cbs8 = Cbd10 = (770x10-6)(10x10-6·2x10-6) + (380x10-12)(2·12x10-6) = 24.5fF Cgs8 = (220x10-12·10x10-6) + (0.67)(10μm·0.5μm·6fF//μm2) = 22.2fF and Cgd10 = (220x10-12)(10x10-6) = 2.2fF The capacitance C8 is equal to C8 = 24.5fF + 2.2fF + 22.2fF + 24.5fF = 73.4FF Using the values of Ex. 240-4 of 600μS, the pole p8 is found as, -p8 = gm8rds8 gm10/C8 = -600μS·600μS·/4.5μS·73.4fF = -1090x109 rads/sec. 5.) The capacitance for the pole at p9 is identical with C8. Therefore, since gm9 is 600μS, the pole p9 is -p9 = 8.17x109 rads/sec. CMOS Analog Circuit Design © P.E. Allen - 2010
  • 7. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-13 Example 270-2 - Continued The poles are summarized below: pA = -1.456x109 rads/sec pB = -1.456x109 rads/sec p6 = -3.38x109 rads/sec p8 = -1090x109 rads/sec p9 = -8.17x109 rads/sec jω New GB = 0.2x109 σ x 109 p8 = -1090G p9 = -8.17G p6 = -3.38G pA = pB = -1.456G -3 -2 -1 -8 -7 -6 -5 -4 070503-02 The smallest of these poles is pA or pB. Since p6 is not much larger than pA or pB, we will find the new GB by dividing pA or pB by 4 (which is guess rather than 2.2) to get 364x106 rads/sec. Thus the new GB will be 364/2 or 58MHz. Checking our guess gives a phase margin of, PM = 90° - 2tan-1(0.364/1.456) - tan-1(0.364/3.38) = 56° which is okay The magnitude of the dominant pole is given as pdominant = GB/Avd(0) = 364x106/3,678 = 99,000 rads/sec. The value of load capacitor that will give this pole is CL = (pdominant·Rout)-1 = (99x103·7.44M)-1 = 1.36pF Therefore, the new GB = 58MHz compared with the old GB = 10MHz. CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-14 Elimination of Higher-Order Poles The minimum circuitry for a cascode op amp is shown below: Non-dominant Pole vout CL Non-dominant Pole 060710-01 vin + VPB1 VPB2 Dominant Pole VNB2 vin + VNB1 VDD M4 M3 M2 M1 If the source-drain area between M1 and M2 and M3 and M4 can be minimized, the non-dominant poles will be quite large. CMOS Analog Circuit Design © P.E. Allen - 2010
  • 8. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-15 Dynamically Biased, Push-Pull, Cascode Op Amp M4 M3 vout M2 M1 M8 M7 IB M6 VDD φ1 φ2 C1 φ1 C2 φ2 VSS M5 vin+ φ2 φ1 + - VB2 vin- + - VB1 Fig.7.2-5 Push-pull, cascode amplifier: M1-M2 and M3-M4 Bias circuitry: M5-M6-C2 and M7-M8-C1 CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-16 Dynamically Biased, Push-Pull, Cascode Op Amp - Continued Operation: M8 M7 + - VB2 + - VDD-VB2-vin+ IB vin+ M6 VDD + - vin+-VSS-VB1 VSS C1 M5 C2 + - VB1 M4 M3 vout M2 M1 VDD C1 C2 VSS VDD-VB2-(vin+-vin-) VDD-VB2-vin+ vin- + - + - vin+-VSS-VB1 VSS+VB1-(vin+-vin-) Equivalent circuit during the φ1 clock period Equivalent circuit during the φ2 clock period. Fig. 7.2-6 CMOS Analog Circuit Design © P.E. Allen - 2010
  • 9. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-17 Dynamically Biased, Push-Pull, Cascode Op Amp - Continued This circuit will operate on both clock phases† . M4 M3 vout M2 M1 M8 M7 φ2 φ1 φ1 φ1 + VB2 - vin- IB φ2 M6 VDD C4 C3 φ2 φ1 φ1 φ2 VSS C2 C1 M5 vin+ φ2 φ2 φ1 + VB1 - Fig. 7.2-7 Performance (1.5μm CMOS): • 1.6mW dissipation • GB 130MHz (CL=2.2pF) • Settling time of 10ns (CL=10pF) This amplifier was used with a 28.6MHz clock to realize a 5th-order switched capacitor filter having a cutoff frequency of 3.5MHz. † S. Masuda, et. al., “CMOS Sampled Differential Push-Pull Cascode Op Amp,” Proc. of 1984 International Symposium on Circuits and Systems, Montreal, Canada, May 1984, pp. 1211-12-14. CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-18 CASCADED AMPLIFIERS USING VOLTAGE AMPLIFIERS Bandwidth of Cascaded Amplifiers Cascading of low-gain, wide-bandwidth amplifiers: Ao s/ω1+1 Ao s/ω1+1 Vin Vout 060710-02 Ao s/ω1+1 A1 A2 An Ao s/ω1+1 n n Overall gain is Ao -3dB frequency is, -3dB = 1 21/n-1 If Ao = 10, 1 = 300x106 rads/sec. and n = 3, then Overall gain is 60dB and -3dB = 0.511 = 480x106 rads/sec. 76.5 MHz CMOS Analog Circuit Design © P.E. Allen - 2010
  • 10. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-19 Voltage Amplifier Suitable for Cascading VPB1 VPB1 Μ6 060710-03 VDD I5 I3 I4 I6 Μ5 Μ3 Μ4 V − out + + − Vin Μ1 Μ2 I1 I2 VNB1 I7 Μ7 Voltage Gain: Vout Vin = gm1 gm3 = Kn'(W1/L1)(I3+I5) Kp'(W3/L3)I3 -3dB gm3 Cgs1 CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-20 Ex. 270-3 - Design of a Voltage Amplifier for Cascading Design the previous voltage amplifier for a gain of Ao = 10 and a power dissipation of no more than 1mW. The design should permit Ao to be well defined. What is the -3dB for this amplifier and what would be the -3dB for a cascade of three identical amplifiers? Solution To enhance the accuracy of the gain, we replace M3 and M4 with NMOS transistors to avoid the variation of the transconductance parameter. This assumes a p-well technology to avoid bulk effects. The gain of 10 requires, W1 L1 (I3+I5) = 100 W3 L3 I3 VDD VPB1 VPB1 I5 I3 I4 I6 Μ5 Μ3 Μ4 Vout + − + − Vin Μ1 Μ2 I1 I2 VNB1 I7 Μ7 If VDD = 2.5V, then 2(I3+I5)·2.5V = 1000μW. Therefore, I3+I5 = 200μA. Let I3 = 20μA and W1/L1 = 10W3/L3. Choose W1/L1 = 5μm/0.5μm which gives W3/L3 = 0.5μm/0.5μm. M5 and M6 are designed to give I5 = 180μA and M7 is designed to give I7 = 400μA. The dominant pole is gm3/Cout. Μ6 060711-01 CMOS Analog Circuit Design © P.E. Allen - 2010
  • 11. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-21 Ex. 270-3 – Continued Cout = Cgs3+Cbs3+Cbd1+Cbd5+Cgd1+Cgd5+Cgs1(next stage) Cgs3 + Cgs1 Using Cox = 60.6x10-4 F/m2, we get, Cout (2.5+0.25)x10-12 m2x 60.6x10-4 F/m2 = 16.7fF Cout 20fF gm3 = 2·120·1·20 μS = 69.3μS Dominant pole 69.3μS/20fF = 34.65x108 rads/sec. f-3dB = 551MHz The bandwidth of three identical cascaded amplifiers giving a low-frequency gain of 60dB would have a f-3dB of f-3dB(Overall) = f-3dB 21/3-1 = 551MHz (0.5098) = 281MHz. Pdiss = 3mW -60dB/dec. -40dB/dec. -20dB/dec. log10(f) 060711-02 dB 60 40 20 0 3 cascaded stages 2 cascaded stages Single stage 551MHz 281MHz CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-22 A 71 MHz CMOS Programmable Gain Amplifier† Uses 3 ac-coupled stages. First stage (0-20dB, common gate for impedance matching and NF): vout VDD vout CMFB VBP VBN 2dB 0dB VB1 vin 0dB 2dB VB1 vin M2 M2 M3 M2dB M0dB M0dB M2dB Fig. 7.2-137A Rin = 330 to match source driving requirement All current sinks are identical for the differential switches. Dominant pole at 150MHz. † P. Orsatti, F. Piazza, and Q. Huang, “A 71 MHz CMOS IF-Basdband Strip for GSM, IEEE JSSC, vol. 35, No. 1, Jan. 2000, pp. 104-108. CMOS Analog Circuit Design © P.E. Allen - 2010
  • 12. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-23 A 71 MHz PGA – Continued Second stage (-10dB to 20dB): CMFB VDD 2dB 0dB 0dB 2dB VBP M5 M6 M5 M6 vout vout VBN M2 M2 M4 0dB Load -10dB M4 vin vin M3 -10dB M2 M2 M3 -10dB Fig. 7.2-137A M2dB M0dB Load M2dB M0dB Dominant pole is also at 150MHz For VDD = 2.5V, at 60dB gain, the total current is 2.6mA IIP3 +1dBm CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-24 CASCADED AMPLIFIERS USING CURRENT FEEDBACK AMPLIFIERS Advantages of Using Current Feedback Why current feedback? • Higher GB • Less voltage swing more dynamic range What is a current amplifier? Requirements: io = Ai(i1-i2) Ri1 = Ri2 = 0 Ro = Ri2 Ri1 Ideal source and load requirements: Rsource = RLoad = 0 i2 i1 io - + Current Amplifier Ro Fig. 7.2-8A CMOS Analog Circuit Design © P.E. Allen - 2010
  • 13. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-25 Bandwidth Advantage of a Current Feedback Amplifier Consider the inverting voltage amplifier shown using a current amplifier with negative current feedback: The output current, io, of the current amplifier can be written as io = Ai(s)(i1-i2) = -Ai(s)(iin + io) The closed-loop current gain, io/iin, can be found as io iin = -Ai(s) 1+Ai(s) vin io R1 iin R2 i2 io + - + - i1 vout Current Amplifier Voltage Fig. 7.2-9 Buffer However, vout = ioR2 and vin = iinR1. Solving for the voltage gain, vout/vin gives vout vin = ioR2 iinR1 = -R2 R1 Ai(s) 1+Ai(s) If Ai(s) = Ao (s/A)+1 , then vout vout vin = -R2 R1 Ao 1+Ao A(1+Ao) s+A(1+Ao) Av(0) = -R2Ao R1(1+Ao) and -3dB=A(1+Ao) CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-26 Bandwidth Advantage of a Current Feedback Amplifier - Continued The unity-gainbandwidth is, GB = |Av(0)| -3dB = R2Ao R1(1+Ao) · A(1+Ao) = R2 R1 Ao·A = R2 R1 GBi where GBi is the unity-gainbandwidth of the current amplifier. Note that if GBi is constant, then increasing R2/R1 (the voltage gain) increases GB. Illustration: Magnitude dB Ao dB 1+Ao Ao dB K 1+Ao Ao dB Voltage Amplifier, R2 K R2 R1 Voltage Amplifier, = K Current Amplifier ωA R1 1 R2 R1 GB1 GB2 0dB log10(ω) Fig. 7.2-10 (1+Ao)ωA GBi Note that GB2 GB1 GBi The above illustration assumes that the GB of the voltage amplifier realizing the voltage buffer is greater than the GB achieved from the above method. CMOS Analog Circuit Design © P.E. Allen - 2010
  • 14. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-27 Current Feedback Amplifier In a current mirror implementation of the current amplifier, it is difficult to make the input resistance sufficiently small compared to R1. This problem can be solved using a transconductance input stage shown in the following block diagram: Vout 060711-04 GM RF Ai + − Vin Vout Vin = -GMRFAi 1+Ai CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-28 Differential Implementation of the Current Feedback Amplifier VDD + Vin M1 M2 060712-01 Rin RF R + V − F out VPB1 VPB2 Vin VNB2 1:n 1:n - Iin = gm1 1+0.5gm1Rin +-Vin Vin - 2 and Vout = n(2RF) 1+n Iin Vout Vin 2nRF Rin CMOS Analog Circuit Design © P.E. Allen - 2010
  • 15. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-29 A 20dB Voltage Amplifier using a Current Amplifier The following circuit is a programmable voltage amplifier with up to 20dB gain: vin+ vin- M1 VDD R1 R2 R2 + vout - +1 +1 VSS VBias M2 x2 = 1/4 x4 =1/8 x2 = 1/4 x4 =1/8 x1 =1/2 x1 =1/2 Fig. 7.2-135A R1 and the current mirrors are used for gain variation while R2 is fixed. CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-30 Programmability of the Previous Stage Input OTA: Changes GM in 6dB steps. CMOS Analog Circuit Design © P.E. Allen - 2010
  • 16. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-31 Programmability of the Voltage Stage – Cont’d Current Amplifier: Changes RF in 2dB steps (RF20dB = 2.1k, RF18dB = 1.6k, RF16dB = 1.3k, and RF14dB = 5k.) RFTotal = 10k. CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-32 Frequency Response of the Current Feedback PGA Stage 0.5pF load: CMOS Analog Circuit Design © P.E. Allen - 2010
  • 17. Lecture 270 – High Speed Op Amps (3/28/10) Page 270-33 Frequency Response of the Entire 60dB PGA Includes output buffer: CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 270 – High Speed Op Amps (3/28/10) Page 270-34 SUMMARY • Increasing the GB of an op amp requires that the magnitude of all non-dominant poles are much greater than GB from the origin of the complex frequency plane • The practical limit of GB for an op amp is approximately 5-10 times less than the magnitude of the smallest non-dominant pole ( 100MHz) • To achieve high values of GB it is necessary to eliminate the non-dominant poles (which come from parasitics) or increase the magnitude of the non-dominant poles • The best way to achieve high-bandwidth amplifiers is to cascade high-bandwidth voltage amplifiers • If the gain of the high-bandwidth voltage amplifiers is well defined, then it is not necessary to use negative feedback around the amplifier • Amplifiers with well defined gains are obtainable with a -3dB bandwidth of 100MHz CMOS Analog Circuit Design © P.E. Allen - 2010