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POLYCRYSTAL
Ultrapure technologies of the Future
Development of innovative technologies
for the recycling of the man-caused
wastes and deposits of closed and existing
industries.
Production wastes continue to be a
daunting challenge worldwide, which leads
to serious environmental effects. Expertise
allows us to suggest available alternative of
targeted recycling waste of various origin.
VisionMission
About Us
Founded in 2011
Kyiv, Ukraine
Equipment from leading manufacturers
Domestic and foreign enterprises manufacturing high-tech
heat-treatment equipment work for us.
Up-to-date facilities for research
and analysis are installed in our laboratories.
High scientific potential team
5 PhDs of Technical and Chemical Science are the
company’s core.
Collaboration with IBOPC
VP Khuhar Institute of Bioorganic Chemistry And Petro- chemistry
of the National Academy of Science of Ukraine is our counterpart.
Who we
are
International Quality Certificates
Products obtained by our technologies are of the highest
assessment got from international laboratories.
Technological Projects
The high-purity
Silicon Dioxide
Two technologies for silicon
dioxide continuous
obtainment of organic and
mineral origin.
The high-purity
Carbon
Technologies for
obtainment of “ash less”
Nano porous carbon and
oxygraphene.
The high-purity
Silicon
Two technologies for
polycrystalline and
monocrystalline
silicon obtainment in the
continuous mode.
The high-purity
Silicon Carbide
Three technologies
for continuous obtainment
of silicon carbide of
different polytypes.
SiO2
Si
SiC
C
SiO2
Developed by Polycrystal
The Technology for Industrial Production
of High-Purity Silicon Dioxide
Doesn’t require
clean rooms
The production of high-purity
materials is attributable to the
impossibility of human
intervention into technological
regimes.
Doesn’t require
many personnel
> Energy consumption approximately
4 kW per 1 kg;
> The lowest price of the raw material
(waste).
Highly automated
technological
process
Exceptional
compactness of
technological line
Low production costs
Continuous Production of High-Purity Amorphous SiO2
TechnologyAdvantages of
Advantages of Technology
Doesn’t require
much space
The equipment set includes
sublimation, desublimation,
hydrolysis reactors.
O
i
Wastes from processing of
agricultural commodities
• Rice husk
• Straw
• Corn
• Etc
Bio origin
Min origin
• Silicate-containing
wastes from production
of ore materials
• Ashes from the coal
burning of thermal power
plants
• Ashes from the burning
and gasification of
sludge
• Mineral processing
wastes
• Any silicate-containing
substance
• Sand
• Ores
S
2
Raw materials for SiO2 production
Processing of
organic raw
materials requires
additional
technological
module.
Application of the amorphous silicon dioxide
Abrasive materials
SiO2 films are used as insulator in
integrated circuits production
Additive in food production (E551)
Pharmaceutical sorbents
Ingredients in self care industry
(tooth paste, creams, etc)
Carriers, diluents or excipients in
pharmaceutics
Epitaxial layers in microelectronics
Production of Si, SiC & Si3Ni4 of
electronic quality
Optical fiber cables, ultra thin
fiber and fiberglass
Special purpose ceramics
Raw material in production of eco
glass, glassware and crystal
In a high temperature thermal
protection fabric
SiO2
Properties of amorphous
silicon dioxide SiO2
Form Powder
Size of globule ≤ 5 micron
Size of primary
particles
≤ 100 nm
Pore width of primary
particles
2-3 nm
Purity 99,9995%
Si
Developed by Polycrystal
The Technology for Industrial Production
of High-Purity Silicon
Highlights of the Production of High-purity Polycrystalline Silicon
Powder (Si-1)
The highest
purity of the
product
Minimal
energy
consumption
Cold
method of
treatment
Continuous
production
cycle
Low
production
costs
5431 2
1
2
3
4
Structure –
polycrystalline
Purity –
99,99999+%
Particles size is
up to 50 micron
Sealed in nitrogen
media to prevent
oxidation
Perfect for
High-purity silicon epitaxial layers in
electronics
Synthesis of fine grade high-purity
silicon carbides and silicon nitrides
Production of the composite
materials
Polycrystalline silicon (Si-1)
The technology
Technology
envisages the
granulation of fine-
grade polycrystalline
silicon.
Benefits
Estimated purity of the
obtained product is
99,9999999% -
99,999999999% (9N-11N).
Feature
Production line provides
for granulation module.
Range of granule size is
0,1-1,0 mm.
Application
Perfect solution for
monocrystalline silicon
crystal grown with the
further production of the
highest quality silicon
wafers.
Monocrystalline
silicon
powder (Si-2)
SiC
Developed by Polycrystal
The Technology for Industrial Production
of High-Purity Silicon Carbide
Production of high-purity silicon carbides (SiC-1,
SiC-2, SiC-3)
The high-purity silicon carbide
powder of semiconductor
quality for electronics needs.
Product Production
The unique thermochemical
processing for integration on
an industrial scale.
Process
All production processes are
automated and occur on a
continuous mode.
Cost Price
The low cost of raw material and
low operating costs of production
result low cost price of the
product.
Personnel
To maintain the continuous line
operation, a minimum number of
personnel is required (2 – 3
employees for one process line)
Premises
Technologies do not require sterile
workshops or clean rooms.
Production processes occur inside
the process equipment closed
from the outdoor environment.
Main
highlights of
technologies
The technology of silicon
carbide obtainment from wastes
of monocrystalline silicon crystal
processing when producing
solar batteries (ingot slicing).
High-purity silicon carbide (SiC-1)
Purity – 99,999+%
Polytype - 6H
Density – 1,0 g/sm³
High-purity silicon carbide (SiC-1)
It was found that
velocity of temperature
and duration of
synthesis directly affect
product quality.
High-purity silicon carbide (SiC-2)
SiO2 SiC 2CO3C
Synthesis technology from
amorphous silicon dioxide and
ash less carbon.
Amorphous silicon dioxide and ash
less carbon which have been
obtained by our technologies are in
the processing.
Temperature, oC 1400 1500 1600 1700 1800 1900
Chemical formula SiО2 SiC/SiО2 SiC/SiО2 SiC SiC SiC
Concentration, % 100 79/21 94/6 100 100 100
Crystal system amorpho
us
cubic/
tetragonal
cubic/
tetragonal
cubic cubic cubic
Space group 216: F-43m/ 92:
Р41212
216: F-43m/ 92:
Р41212
216: F-43m 216: F-43m 216: F-43m
a, Å 4,3365/ 4,9636 4,3365/ 4,9636 4,3415 4,3477 4,3575
b, Å 4,3365/ 4,9636 4,3365/ 4,9636 4,3415 4,3477 4,3575
c, Å 4,3365/ 6,9223 4,3365/ 6,9223 4,3415 4,3477 4,3575
L, nm 17,70 18,50 21,30 46,60 36,60
High-purity silicon carbide (SiC-2)
Low density is the distinctive
feature of the material,
provides the widest range of
application for composite
materials as well as in hard
thermal barrier coatings.
Purity – 99,999+%
Polytype - 3С
Structure – cubic
Density – 0,12 g/sm³
Particle size < 50 micron
High purity silicon carbide (SiC-3)
1 Fibrous structure
2 Length - up to 100 micron
3 Diameter - to 20 micron
4 Density - 0,1 g/sm³
5 Purity – 99,999+%
Technology of silicon carbide
fibers obtainment.
The raw material for the
technology is amorphous silica
of low density.
The output material synthesis
stands out for its light weight.
The technology provides
continuous industrial
production line with
estimated efficiency of 15
kg per hour.
1
High purity silicon carbide (SiC-3)
2
3
High purity silicon carbide (SiC-3)
Application of Silicon Carbides (SiC-1, SiC-2, SiC-3)
SiC is an important material in
TRISO-coated fuel particles, the
type of nuclear fuel found in high
temperature gas cooled reactors
such as PBR.
A layer of SiC gives coated fuel
particles structural support and is
the main diffusion barrier of the
release of fission product.
Nuclear Industry
SiC – coating of metal units
and details allow to apply the
constructions in conditions of
high temperatures up to
1300°С, when corrosive vapors
of acids and basis become
affective.
Ceramic coatings
The fine fractions silicon carbide if
added to melt drastically
changes metal properties. For
instance magnesium may
become matter of high plasticity
and fire resistance. The aluminum
case shows the increased
hardness and durability with
preserving plastic properties.
Metallurgy
Well known and widely used
oxygen-free matter.
Mechanically robust, durable,
with low thermal expansion
coefficient and oxygen
resistance at up to 1500°C.
Composite materials
Chemicals and radiation
resistant.
It’s applied in Stealth-
technologies for covering of
military equipment and
arming from detection. The
dense material is perfect for
body and vehicles armoring
application.
Military hardware
SiC is used for
monocrystalline “synthetic
moissanite” crystal
growth. Moissanite is
similar to a diamond in
respect to it’s
transparency, hardness
and high refractive index.
Jewelry
SiC supports to optimize
optical and photoelectrical
parameters of solar elements.
The use of SiC converters
eliminates power losses and
also increases efficiency of
energy conversion up to
99,2%
Photovoltaics
Electronic components produced of
silicon carbide have well above
capabilities comparing to details
made of ordinary semiconductor
matters (e.g. silicon)
Band gap: 2,36-3,23 eV. The
electrical breakdown field of silicon
carbide exceeds silicon almost in ten
times.
Electronics
C
Developed by Polycrystal
The Technology for Industrial Production
of High-Purity Carbon
Ash less
Nanoporous
Carbon
Purity % ≥ 99,99
Particle size micron ≤ 50
Specific surface area m²/g ≥ 500
Pore size nm 5 ÷ 10
Humidity % ≤ 0,5
Perfect for semi conductive shells of power cables
Used for various purposes of sorbent production
Indispensable in catalyst carriers production
Electrode material for double layer capacitors (super
capacitors)
Applied for synthesis of high purity metal
carbides
Ideal matter for electrically conductive construction
polymers
Allotropes of carbon
Diamond
Graphite
Amorphous
carbon
Fullerene
Carbon
Nano tubes
Graphene
Oxygraphene
Oxygraphene
100%
carbon
90 - 96%
carbon
OxygrapheneGraphene
4-10%
oxygen
Oxygraphene properties
Purity
Density
Specific surface area
Thermal resistance in outer environment
%
м²/г
°С
г/см³
≥ 99,9
0,03 – 0,05
≥ 300
≤ 600
g/sm³
m²/g
°С
Doesn’t melt or destroy
at the heating
temperature up to
3000°С in the neutral
gas or vacuum
environment.
Chemically neutral
and corrosion- resistant
to solvents, acids and
bases impact.
Has the unique
potential to improve
material properties if
interact with them.
Analogue of
graphite oxide,
precursor for
graphene's
obtainment
Oxygraphene
Application
• Fillers of the composite
nonstructural Nano materials;
• Electrically conductive
polymer materials;
• Lubricant components;
• Carbon electrodes of
lithium batteries;
• Catalysts carriers;
• Sorbents. Drug carriers;
• Antioxidants in cosmetics;
• Super capacitors;
• High capacity batteries;
• Optoelectronics;
• etc.
• Multifunctional;
• Low cost price;
• High purity;
• Availability of raw materials;
• High technology;
• Synthesized materials of high
quality;
• Specified properties of obtained
materials;
• Environmentally friendly process.
Advantages
www.polycrystal.com.ua
sales@polycrystal.com.ua
+38 067 461 8475
+38 097 809 2069
+38 097 929 0025 (english)
Mutually beneficial
cooperation
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Polycrystal presentation

  • 2. Development of innovative technologies for the recycling of the man-caused wastes and deposits of closed and existing industries. Production wastes continue to be a daunting challenge worldwide, which leads to serious environmental effects. Expertise allows us to suggest available alternative of targeted recycling waste of various origin. VisionMission About Us
  • 3. Founded in 2011 Kyiv, Ukraine Equipment from leading manufacturers Domestic and foreign enterprises manufacturing high-tech heat-treatment equipment work for us. Up-to-date facilities for research and analysis are installed in our laboratories. High scientific potential team 5 PhDs of Technical and Chemical Science are the company’s core. Collaboration with IBOPC VP Khuhar Institute of Bioorganic Chemistry And Petro- chemistry of the National Academy of Science of Ukraine is our counterpart. Who we are International Quality Certificates Products obtained by our technologies are of the highest assessment got from international laboratories.
  • 4. Technological Projects The high-purity Silicon Dioxide Two technologies for silicon dioxide continuous obtainment of organic and mineral origin. The high-purity Carbon Technologies for obtainment of “ash less” Nano porous carbon and oxygraphene. The high-purity Silicon Two technologies for polycrystalline and monocrystalline silicon obtainment in the continuous mode. The high-purity Silicon Carbide Three technologies for continuous obtainment of silicon carbide of different polytypes. SiO2 Si SiC C
  • 5. SiO2 Developed by Polycrystal The Technology for Industrial Production of High-Purity Silicon Dioxide
  • 6. Doesn’t require clean rooms The production of high-purity materials is attributable to the impossibility of human intervention into technological regimes. Doesn’t require many personnel > Energy consumption approximately 4 kW per 1 kg; > The lowest price of the raw material (waste). Highly automated technological process Exceptional compactness of technological line Low production costs Continuous Production of High-Purity Amorphous SiO2 TechnologyAdvantages of Advantages of Technology Doesn’t require much space The equipment set includes sublimation, desublimation, hydrolysis reactors.
  • 7. O i Wastes from processing of agricultural commodities • Rice husk • Straw • Corn • Etc Bio origin Min origin • Silicate-containing wastes from production of ore materials • Ashes from the coal burning of thermal power plants • Ashes from the burning and gasification of sludge • Mineral processing wastes • Any silicate-containing substance • Sand • Ores S 2 Raw materials for SiO2 production Processing of organic raw materials requires additional technological module.
  • 8. Application of the amorphous silicon dioxide Abrasive materials SiO2 films are used as insulator in integrated circuits production Additive in food production (E551) Pharmaceutical sorbents Ingredients in self care industry (tooth paste, creams, etc) Carriers, diluents or excipients in pharmaceutics Epitaxial layers in microelectronics Production of Si, SiC & Si3Ni4 of electronic quality Optical fiber cables, ultra thin fiber and fiberglass Special purpose ceramics Raw material in production of eco glass, glassware and crystal In a high temperature thermal protection fabric SiO2
  • 9. Properties of amorphous silicon dioxide SiO2 Form Powder Size of globule ≤ 5 micron Size of primary particles ≤ 100 nm Pore width of primary particles 2-3 nm Purity 99,9995%
  • 10. Si Developed by Polycrystal The Technology for Industrial Production of High-Purity Silicon
  • 11. Highlights of the Production of High-purity Polycrystalline Silicon Powder (Si-1) The highest purity of the product Minimal energy consumption Cold method of treatment Continuous production cycle Low production costs 5431 2
  • 12. 1 2 3 4 Structure – polycrystalline Purity – 99,99999+% Particles size is up to 50 micron Sealed in nitrogen media to prevent oxidation Perfect for High-purity silicon epitaxial layers in electronics Synthesis of fine grade high-purity silicon carbides and silicon nitrides Production of the composite materials Polycrystalline silicon (Si-1)
  • 13. The technology Technology envisages the granulation of fine- grade polycrystalline silicon. Benefits Estimated purity of the obtained product is 99,9999999% - 99,999999999% (9N-11N). Feature Production line provides for granulation module. Range of granule size is 0,1-1,0 mm. Application Perfect solution for monocrystalline silicon crystal grown with the further production of the highest quality silicon wafers. Monocrystalline silicon powder (Si-2)
  • 14. SiC Developed by Polycrystal The Technology for Industrial Production of High-Purity Silicon Carbide
  • 15. Production of high-purity silicon carbides (SiC-1, SiC-2, SiC-3) The high-purity silicon carbide powder of semiconductor quality for electronics needs. Product Production The unique thermochemical processing for integration on an industrial scale. Process All production processes are automated and occur on a continuous mode. Cost Price The low cost of raw material and low operating costs of production result low cost price of the product. Personnel To maintain the continuous line operation, a minimum number of personnel is required (2 – 3 employees for one process line) Premises Technologies do not require sterile workshops or clean rooms. Production processes occur inside the process equipment closed from the outdoor environment. Main highlights of technologies
  • 16. The technology of silicon carbide obtainment from wastes of monocrystalline silicon crystal processing when producing solar batteries (ingot slicing). High-purity silicon carbide (SiC-1) Purity – 99,999+% Polytype - 6H Density – 1,0 g/sm³
  • 18. It was found that velocity of temperature and duration of synthesis directly affect product quality. High-purity silicon carbide (SiC-2) SiO2 SiC 2CO3C Synthesis technology from amorphous silicon dioxide and ash less carbon. Amorphous silicon dioxide and ash less carbon which have been obtained by our technologies are in the processing. Temperature, oC 1400 1500 1600 1700 1800 1900 Chemical formula SiО2 SiC/SiО2 SiC/SiО2 SiC SiC SiC Concentration, % 100 79/21 94/6 100 100 100 Crystal system amorpho us cubic/ tetragonal cubic/ tetragonal cubic cubic cubic Space group 216: F-43m/ 92: Р41212 216: F-43m/ 92: Р41212 216: F-43m 216: F-43m 216: F-43m a, Å 4,3365/ 4,9636 4,3365/ 4,9636 4,3415 4,3477 4,3575 b, Å 4,3365/ 4,9636 4,3365/ 4,9636 4,3415 4,3477 4,3575 c, Å 4,3365/ 6,9223 4,3365/ 6,9223 4,3415 4,3477 4,3575 L, nm 17,70 18,50 21,30 46,60 36,60
  • 19. High-purity silicon carbide (SiC-2) Low density is the distinctive feature of the material, provides the widest range of application for composite materials as well as in hard thermal barrier coatings. Purity – 99,999+% Polytype - 3С Structure – cubic Density – 0,12 g/sm³ Particle size < 50 micron
  • 20. High purity silicon carbide (SiC-3) 1 Fibrous structure 2 Length - up to 100 micron 3 Diameter - to 20 micron 4 Density - 0,1 g/sm³ 5 Purity – 99,999+%
  • 21. Technology of silicon carbide fibers obtainment. The raw material for the technology is amorphous silica of low density. The output material synthesis stands out for its light weight. The technology provides continuous industrial production line with estimated efficiency of 15 kg per hour. 1 High purity silicon carbide (SiC-3) 2 3
  • 22. High purity silicon carbide (SiC-3)
  • 23. Application of Silicon Carbides (SiC-1, SiC-2, SiC-3) SiC is an important material in TRISO-coated fuel particles, the type of nuclear fuel found in high temperature gas cooled reactors such as PBR. A layer of SiC gives coated fuel particles structural support and is the main diffusion barrier of the release of fission product. Nuclear Industry SiC – coating of metal units and details allow to apply the constructions in conditions of high temperatures up to 1300°С, when corrosive vapors of acids and basis become affective. Ceramic coatings The fine fractions silicon carbide if added to melt drastically changes metal properties. For instance magnesium may become matter of high plasticity and fire resistance. The aluminum case shows the increased hardness and durability with preserving plastic properties. Metallurgy Well known and widely used oxygen-free matter. Mechanically robust, durable, with low thermal expansion coefficient and oxygen resistance at up to 1500°C. Composite materials Chemicals and radiation resistant. It’s applied in Stealth- technologies for covering of military equipment and arming from detection. The dense material is perfect for body and vehicles armoring application. Military hardware SiC is used for monocrystalline “synthetic moissanite” crystal growth. Moissanite is similar to a diamond in respect to it’s transparency, hardness and high refractive index. Jewelry SiC supports to optimize optical and photoelectrical parameters of solar elements. The use of SiC converters eliminates power losses and also increases efficiency of energy conversion up to 99,2% Photovoltaics Electronic components produced of silicon carbide have well above capabilities comparing to details made of ordinary semiconductor matters (e.g. silicon) Band gap: 2,36-3,23 eV. The electrical breakdown field of silicon carbide exceeds silicon almost in ten times. Electronics
  • 24. C Developed by Polycrystal The Technology for Industrial Production of High-Purity Carbon
  • 25. Ash less Nanoporous Carbon Purity % ≥ 99,99 Particle size micron ≤ 50 Specific surface area m²/g ≥ 500 Pore size nm 5 ÷ 10 Humidity % ≤ 0,5 Perfect for semi conductive shells of power cables Used for various purposes of sorbent production Indispensable in catalyst carriers production Electrode material for double layer capacitors (super capacitors) Applied for synthesis of high purity metal carbides Ideal matter for electrically conductive construction polymers
  • 27. Oxygraphene 100% carbon 90 - 96% carbon OxygrapheneGraphene 4-10% oxygen Oxygraphene properties Purity Density Specific surface area Thermal resistance in outer environment % м²/г °С г/см³ ≥ 99,9 0,03 – 0,05 ≥ 300 ≤ 600 g/sm³ m²/g °С Doesn’t melt or destroy at the heating temperature up to 3000°С in the neutral gas or vacuum environment. Chemically neutral and corrosion- resistant to solvents, acids and bases impact. Has the unique potential to improve material properties if interact with them. Analogue of graphite oxide, precursor for graphene's obtainment
  • 28. Oxygraphene Application • Fillers of the composite nonstructural Nano materials; • Electrically conductive polymer materials; • Lubricant components; • Carbon electrodes of lithium batteries; • Catalysts carriers; • Sorbents. Drug carriers; • Antioxidants in cosmetics; • Super capacitors; • High capacity batteries; • Optoelectronics; • etc. • Multifunctional; • Low cost price; • High purity; • Availability of raw materials; • High technology; • Synthesized materials of high quality; • Specified properties of obtained materials; • Environmentally friendly process. Advantages
  • 29. www.polycrystal.com.ua sales@polycrystal.com.ua +38 067 461 8475 +38 097 809 2069 +38 097 929 0025 (english) Mutually beneficial cooperation Press Esc