Bipolar Junction Transistor Operation and Applications
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Introduction to Transistor ( Construction, working, mode, application etc.)
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Bipolar Junction Transistor Operation and Applications
- 1. BIPOLAR JUNCTION TRANSISTOR THAISA JAWHLY UNDER THE SUPERVISION OF DR. R.C TIWARI SCHOOL OF PHYSICAL SCIENCE MIZORAM UNIVERSITY TANHRIL
- 2. TRANSISTOR IMPORTANT INVENTION OF THE 20TH CENTURY BARDEEN , BRATTAIN & SHOCKLEY 1947 – BELL LABS AMPLIFY , SWITCH ELECTRONIC DEVICES
- 3. BASE CONSTRUCTION P P N COLLECTOR EMITTER PNP TRANSISTOR LIGHTLY DOPED HEAVILY DOPED HEAVILY DOPED
- 5. WORKING N N P COLLECTOR BASE EMITTER VCE + - VBE + + + + + + + FORWARD BIASED REVERSE BIASED
- 6. WORKING N N P COLLECTOR BASE EMITTER VCE + - VBE + + + + + + + FORWARD BIASED REVERSE BIASED IB IC IE IE = IB + IC
- 10. SWITCH N N P
- 11. AMPLIFIER N N P
- 13. TRANSISTOR CONFIGURATION SUMMARY TABLE TRANSISTOR CONFIGURATION COMMON BASE COMMON COLLECTOR (EMITTER FOLLOWER) COMMON EMITTER Voltage gain High Low Medium Current gain Low High Medium Power gain Low Medium High Input / output phase relationship 0° 0° 180° Input resistance Low High Medium Output resistance High Low Medium
- 14. CONCLUSION
- 15. REFERENCES Kittel, C., Introduction to Solid State Physics, 6th Ed., New York:John Wiley, http://www.aps.org/publications/apsnews/200011 /history.cfm http://www.radio- electronics.com/info/data/semicond/bipolar- transistor-bjt/operation-how-transistor-works.php https://learn.sparkfun.com/tutorials/transistors/op eration-modes http://www.electronics- tutorials.ws/transistor/tran10.gif?81223b http://www.electronics- tutorials.ws/transistor/tran12.gif
- 16. THANK YOU
Hinweis der Redaktion
- Transistor is considered one of the most important invention of the 20th century replacing the vaccum tubes. Invented at the Bell Labs, United state by John Bardeen, Wesley Brattain and William Shockley in 1947 a transistor is used to amplify signals and acts as a switch in electronic devices
- It consists of a lightly doped n type material called the Base which is sandwiched between two heavily doped P type material. Upper p type material is made physically larger so as to handle a large amount of current and this constitutes the collector. The lower semiconductor material constitutes the emitter. This is the basic construction of a pnp type transistor which is usually represented by a round symbol consisting of three terminals with an arrow pointing towards the base in the emitter section signifying that it is a pnp type transistor
- Similarly we can have an NPN type transistor as shown in the illustration. In this case the p type material is sandwiched between two N-type material. This is again represented by the round symbol consisting of three terminals with an arrow pointing out of the base in the emitter section signifying that it is an npn-type transistor