This document discusses the design of digital circuits using single electron devices. It begins with background on MOSFETs and their scaling limitations. Then it describes single electron transistors as a promising next-generation technology, discussing their operation via the Coulomb blockade effect. It outlines an orthodox theory for modeling single electron devices and circuits. Finally, it presents simulation results using the SIMON simulator to demonstrate the functioning of logic circuits like multiplexers and adders based on single electron transistors.
Analytical modeling of electric field distribution in dual material junctionl...VLSICS Design
In this paper, electric field distribution of the junctionless dual material surrounding gate MOSFETs
(JLDMSG) is developed. Junctionless is a device that has similar characteristics like junction based
devices, but junctionless has a positive flatband voltage with zero electric field. In Surrounding gate
MOSFETs gate material surrounds the channel in all direction , therefore it can overcome the short
channel effects effectively than other devices. In this paper, surface potential and electric field distribution
is modelled. The proposed surface potential model is compared with the existing central potential model. It
is observed that the short channel effects (SCE) is reduced and the performance is better than the existing
method.
Dual Metal Gate and Conventional MOSFET at Sub nm for Analog ApplicationVLSICS Design
This document summarizes a study comparing a conventional MOSFET and dual metal gate (DMG) MOSFET at the 30nm technology node. Simulations were performed using Silvaco TCAD tools. Key results include:
1) The DMG MOSFET has a lower subthreshold slope and significantly lower gate leakage current compared to the conventional MOSFET.
2) Mobility and transconductance are higher in the DMG MOSFET, indicating better performance for analog applications that require high gain.
3) The DMG MOSFET has a higher intrinsic delay, making it more suitable for applications operated at lower voltages such as filters and sample-and-hold circuits, where gate
1) The document discusses the Metal-Oxide-Semiconductor (MOS) capacitor, which is important for understanding MOSFET operation.
2) It describes the energy band diagrams and carrier accumulation, depletion, and inversion in MOS capacitors under different bias conditions for both p-type and n-type semiconductor substrates.
3) Key concepts covered include the flat-band voltage, threshold voltage, effects of oxide charges, and maximum depletion width.
Performance analysis of cntfet and mosfet focusing channel length, carrier mo...IJAMSE Journal
Enhancement of switching in nanoelectronics, Carbon Nano Tube (CNT) could be utilized in nanoscaled Metal Oxide Semiconductor Field Effect Transistor (MOSFET). In this review, we present an in depth discussion of performances Carbon Nanotube Field Effect Transistor (CNTFET) and its significance in nanoelectronic circuitry in comparison with Metal Oxide Semiconductor Field Effect Transistor(MOSFET). At first, we have discussed the structural unit of Carbon Nanotube and characteristic electrical behaviors beteween CNTFET and MOSFET. Short channel effect and effects of scattering and electric field on mobility of CNTFET and MOSFET have also been discussed. Besides, the nature of ballistic transport
and profound impact of gate capacitance along with dielectric constant on transconductance have also
have been overviewed. Electron ballistic transport would be the key in short channel regime for high speed
switching devices. Finally, a comparative study on the characteristics of contact resistance over switching
capacity between CNTFET and MOSFET has been addressed.
Welcome to International Journal of Engineering Research and Development (IJERD)IJERD Editor
This document discusses how different gate dielectric materials affect the threshold voltage of nanoscale MOSFETs. Simulations were conducted using MATLAB and SCHRED software to obtain C-V characteristics for MOSCAP structures with different dielectric materials (PTFE, Polyethylene, SiO2) and thicknesses. Threshold voltages were extracted from the C-V curves using classical, semi-classical, and quantum mechanical models. The results show that lower dielectric constant materials like PTFE reduce threshold voltage more than higher k materials like SiO2. PTFE is suggested as a suitable low-k material for developing MOSFETs and interconnects at the nanoscale.
The document provides an overview of the history and scaling of transistors and integrated circuits. It discusses how vacuum tubes were replaced by transistors, with the first transistor invented in 1947 and the first integrated circuit in 1958. It describes how continuous scaling and improvements in silicon manufacturing have led to billions of transistors being integrated onto a single chip today. The document then discusses different transistor technologies, including MOSFETs, and how scaling to smaller sizes introduced challenges like short channel effects that new transistor designs like FinFETs help address.
Deterioration of short channel effectsijistjournal
This document presents an analytical model for surface potential and electric field in a novel dual halo triple material surrounding gate (DH-TMSG) MOSFET structure. The DH-TMSG incorporates symmetrical dual halo regions near the source and drain, and a triple material gate. The analytical model uses a parabolic approximation method and boundary conditions to derive expressions for surface potential. Simulation results show that the DH-TMSG design significantly reduces short channel effects by producing peaks and steps in the surface potential and electric field profiles through the channel. This improves carrier transport and device performance compared to other multi-gate structures.
Design of Near-Threshold CMOS Logic GatesVLSICS Design
Numerous efforts have made to balance the tradeoff between power consumption, area and speed of a design. While studying the design at the two extreme ends of the design spectrum, namely the ultra-low power with acceptable performance at one end and high performance with power within limit at the other has not made. One solution to achieve the ultra-low power consumption is to operate the design in subthreshold region. The use of sub-threshold circuit designing in fast and energy efficient circuits is always needed in electronics industry especially in DSP, image processing and arithmetic units in microprocessors, where the low power is the primary concern and the delay can be tolerated. We design a simple CMOS inverter in weak inversion region (sub-threshold) and compare the power consumption with strong inversion region using Cadence 0.18µm Technology.
Analytical modeling of electric field distribution in dual material junctionl...VLSICS Design
In this paper, electric field distribution of the junctionless dual material surrounding gate MOSFETs
(JLDMSG) is developed. Junctionless is a device that has similar characteristics like junction based
devices, but junctionless has a positive flatband voltage with zero electric field. In Surrounding gate
MOSFETs gate material surrounds the channel in all direction , therefore it can overcome the short
channel effects effectively than other devices. In this paper, surface potential and electric field distribution
is modelled. The proposed surface potential model is compared with the existing central potential model. It
is observed that the short channel effects (SCE) is reduced and the performance is better than the existing
method.
Dual Metal Gate and Conventional MOSFET at Sub nm for Analog ApplicationVLSICS Design
This document summarizes a study comparing a conventional MOSFET and dual metal gate (DMG) MOSFET at the 30nm technology node. Simulations were performed using Silvaco TCAD tools. Key results include:
1) The DMG MOSFET has a lower subthreshold slope and significantly lower gate leakage current compared to the conventional MOSFET.
2) Mobility and transconductance are higher in the DMG MOSFET, indicating better performance for analog applications that require high gain.
3) The DMG MOSFET has a higher intrinsic delay, making it more suitable for applications operated at lower voltages such as filters and sample-and-hold circuits, where gate
1) The document discusses the Metal-Oxide-Semiconductor (MOS) capacitor, which is important for understanding MOSFET operation.
2) It describes the energy band diagrams and carrier accumulation, depletion, and inversion in MOS capacitors under different bias conditions for both p-type and n-type semiconductor substrates.
3) Key concepts covered include the flat-band voltage, threshold voltage, effects of oxide charges, and maximum depletion width.
Performance analysis of cntfet and mosfet focusing channel length, carrier mo...IJAMSE Journal
Enhancement of switching in nanoelectronics, Carbon Nano Tube (CNT) could be utilized in nanoscaled Metal Oxide Semiconductor Field Effect Transistor (MOSFET). In this review, we present an in depth discussion of performances Carbon Nanotube Field Effect Transistor (CNTFET) and its significance in nanoelectronic circuitry in comparison with Metal Oxide Semiconductor Field Effect Transistor(MOSFET). At first, we have discussed the structural unit of Carbon Nanotube and characteristic electrical behaviors beteween CNTFET and MOSFET. Short channel effect and effects of scattering and electric field on mobility of CNTFET and MOSFET have also been discussed. Besides, the nature of ballistic transport
and profound impact of gate capacitance along with dielectric constant on transconductance have also
have been overviewed. Electron ballistic transport would be the key in short channel regime for high speed
switching devices. Finally, a comparative study on the characteristics of contact resistance over switching
capacity between CNTFET and MOSFET has been addressed.
Welcome to International Journal of Engineering Research and Development (IJERD)IJERD Editor
This document discusses how different gate dielectric materials affect the threshold voltage of nanoscale MOSFETs. Simulations were conducted using MATLAB and SCHRED software to obtain C-V characteristics for MOSCAP structures with different dielectric materials (PTFE, Polyethylene, SiO2) and thicknesses. Threshold voltages were extracted from the C-V curves using classical, semi-classical, and quantum mechanical models. The results show that lower dielectric constant materials like PTFE reduce threshold voltage more than higher k materials like SiO2. PTFE is suggested as a suitable low-k material for developing MOSFETs and interconnects at the nanoscale.
The document provides an overview of the history and scaling of transistors and integrated circuits. It discusses how vacuum tubes were replaced by transistors, with the first transistor invented in 1947 and the first integrated circuit in 1958. It describes how continuous scaling and improvements in silicon manufacturing have led to billions of transistors being integrated onto a single chip today. The document then discusses different transistor technologies, including MOSFETs, and how scaling to smaller sizes introduced challenges like short channel effects that new transistor designs like FinFETs help address.
Deterioration of short channel effectsijistjournal
This document presents an analytical model for surface potential and electric field in a novel dual halo triple material surrounding gate (DH-TMSG) MOSFET structure. The DH-TMSG incorporates symmetrical dual halo regions near the source and drain, and a triple material gate. The analytical model uses a parabolic approximation method and boundary conditions to derive expressions for surface potential. Simulation results show that the DH-TMSG design significantly reduces short channel effects by producing peaks and steps in the surface potential and electric field profiles through the channel. This improves carrier transport and device performance compared to other multi-gate structures.
Design of Near-Threshold CMOS Logic GatesVLSICS Design
Numerous efforts have made to balance the tradeoff between power consumption, area and speed of a design. While studying the design at the two extreme ends of the design spectrum, namely the ultra-low power with acceptable performance at one end and high performance with power within limit at the other has not made. One solution to achieve the ultra-low power consumption is to operate the design in subthreshold region. The use of sub-threshold circuit designing in fast and energy efficient circuits is always needed in electronics industry especially in DSP, image processing and arithmetic units in microprocessors, where the low power is the primary concern and the delay can be tolerated. We design a simple CMOS inverter in weak inversion region (sub-threshold) and compare the power consumption with strong inversion region using Cadence 0.18µm Technology.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
This document summarizes research on scaling limits of CMOS devices and proposed structures to overcome these limits. It first discusses how quantum mechanical effects and short channel effects become problematic as devices are scaled down, limiting further scaling. It then reviews various structures proposed by other researchers, including fully depleted SOI MOSFETs with strained silicon channels, dual material gates, and gate-all-around structures. Finally, it proposes a new structure combining these elements: a fully depleted SOI gate-all-around MOSFET using a strained silicon channel and dual material gate to address scaling challenges while improving performance.
The document presents a study of ballistic transport in carbon nanotube field effect transistors (CNTFETs) using numerical modeling and simulation. It compares the performance of Schottky-barrier CNTFETs and MOSFET-like CNTFETs. Key findings include that thinner oxides and higher dielectric constant materials provide better electrostatic gate control and higher on-off current ratios, and that doped contact CNTFETs generally exhibit better performance than Schottky-barrier CNTFETs. The study provides insights into scaling effects and quantum phenomena in CNTFET devices.
CNFET BASED BASIC GATES AND A NOVEL FULLADDER CELLVLSICS Design
In this paper two novel high performance designs for AND and OR basic gates and a novel Full-Adder Cell are presented. These designs are based on carbon nanotube technology. In order to compare the proposed designs with previous ones both MOSFET based and CNFET based circuits are selected. By the way the proposed designs have better performance in comparison with previous designs in terms of speed, power consumption and power-delay product (PDP).
Structural and Optical properties of Multiwalled Carbon Nanotubes Modified by...TELKOMNIKA JOURNAL
Structure, chemical, and physical properties of Multiwalled Carbon Nanotubes (MWCNTs) after
modification by dielectric barrier discharge (DBD) at atmospheric pressure is investigated using
Transmission Electron Microscopy (TEM), Raman and Uv-vis-NIR spectroscopy. Effects of plasma
treatment time on MWCNTs are analyzed. TEM result shows that during the short period of plasma
treatment time of 5 minutes, the tube surface experienced a few damages. With increase in plasma
treatment time, the tube surface is damaged to a certain extent. Intensity ratio, ID/IG through Raman
analysis shows a good agreement with TEM. The values of ID/IG of the modified MWCNTs are larger than
those of pristine MWCNTs. An increase of ID/IG indicates that considerable defects are produced on the
surfaces of MWCNTs. The treated MWCNTs has energy band gap compared to zero band gap of
untreated MWCNTs. It is believed that the defect site of MWCNTs can modify the electronics properties of
MWCNTs from being metallic to semiconducting structure, which is applicable for almost all electronics
device applications.
Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
This document discusses MOSFETs and CMOS technology scaling. It begins with an introduction to electronics and transistors before discussing MOSFET structure and operation. The MOSFET I-V characteristics and effects like body effect and channel length modulation are covered. The use of SPICE models to simulate MOSFET behavior is also summarized. The document then addresses challenges with scaling CMOS technology to smaller nodes and how approaches like high-k dielectrics and FinFETs helped overcome these challenges. FinFET structure and advantages over planar MOSFETs are briefly outlined.
This paper presents the design and simulation of a low voltage Si LDMOS transistor using ATLAS SILVACO. The proposed LDMOS structure has a channel length of 0.3 μm and gate length of 0.75 μm, smaller than the reference device. Simulations show the new device has higher breakdown voltage of 13.75 V and lower on resistance compared to the reference LDMOS. Impact ionization occurs away from the drain in the drift region, allowing for the higher breakdown voltage. The feedback capacitance is also reduced compared to the reference device. In summary, the proposed lower voltage LDMOS transistor has a more compact size while improving key characteristics like breakdown voltage and on resistance.
SUB TEN MICRON CHANNEL DEVICES ACHIEVED BY VERTICAL ORGANIC THIN FILM TRANSI...VLSICS Design
The channel lengths of the top contact organic thin film transistors are usually defined during their fabrication by optical lithography or by shadow masking during the metal deposition process. Realizing short channel (sub-ten micron channel length) transistors by lithography will require costly lithography equipment. On the other hand, it is extremely challenging to achieve short channel transistors using the low cost shadow mask process. One low cost method of achieving short channel devices is to build vertical transistors with the transistor, where the channel gets defined in the vertical part of the device. This paper shows that vertical channel top contact organic thin film transistor has been successfullyrealized on the vertical edge of trench. This helped in creating the device with channel lengths less than ten microns, much smaller than what could be typically achieved with the use of shadow masks.
This document discusses carbon nanotube field-effect transistors (CNTFETs) as a potential substitute for MOSFETs. CNTFETs could help overcome limitations of MOSFET scaling by providing higher carrier mobility, excellent electrostatics, and gate control. CNTFETs exhibit advantages like better threshold voltage and subthreshold slope control as well as higher current density and transconductance compared to MOSFETs. However, mass production of CNTFETs faces challenges related to defects, failure rates, and production costs that are higher than for traditional CMOS.
CNTFET is a type of field effect transistor that uses a carbon nanotube as the channel material. Carbon nanotubes have excellent mechanical and electrical properties and allow for 1-D ballistic electron transport. A single-walled carbon nanotube is used as the channel between source and drain contacts in a CNTFET. The gate contact wraps around the carbon nanotube channel, allowing for good electrostatic control of carriers. CNTFETs were first fabricated in 1998 and have properties like high drive current, transconductance, and temperature resilience making them promising for high frequency applications.
A Study On Double Gate Field Effect Transistor For Area And Cost Efficiencypaperpublications3
Abstract: Proposal for a field effect transistor had been presented, with numerical device simulations to verify the title in every manner possible. The two transitional field effect transistors like pMOS and nMOS functions are simultaneously performed, working as one or as the other according to the voltage applied to the gate terminal. Increase in the circuit speed is observed when this technology is implemented on the device suggested with respect to the standard CMOS technology, presented a drastic reduction of number devices and associated parasitic capacitances. In addition to it IC obtained with the proposed device are fully compatible with the standard CMOS technology and the fabrication processes. Fabrication of Static Ram cells with three transistors only with minimum dimensions and a single bit line by saving silicon area and increasing the memory performance with respect to standard CMOS technologies. It is also presented that the fully compatible CMOS process can be used to successfully manufacture the new FET structure.
This document provides information about a course on semiconductor devices, including bipolar junction transistors (BJTs). It lists the course aims as reviewing diode and BJT operation, extending knowledge to include recombination influences, investigating speed limitations, and extracting equivalent circuit models. It recommends textbooks and outlines the course topics as reviewing semiconductor devices and pn diodes, studying long pn diodes incorporating recombination, examining BJT DC operation and switching characteristics, and why studying devices is important.
Simulation study of single event effects sensitivity on commercial power MOSF...journalBEEI
1. The document simulates the effects of single heavy ion radiation on commercial power MOSFETs using Sentaurus TCAD software.
2. The simulation results show that single heavy ion radiation affected the device structure and fluctuated the I-V characteristics of the commercial power MOSFET.
3. The study aims to investigate the sensitivity of power MOSFETs to single event effects when exposed to radiation environments, which is important for applications in areas like space systems.
This document summarizes research on gate leakage reduction techniques for deep submicron integrated circuits. It discusses how gate leakage has become a significant source of power dissipation as devices are scaled down, due to increased subthreshold leakage, gate oxide tunneling, and reverse bias junction leakage. The document then describes complementary pass transistor logic (CPL) and differential cascade voltage switch logic (DCVSL) as logic families that aim to reduce static power by using fewer transistors and eliminating inverters.
A NEW FULL ADDER CELL FOR MOLECULAR ELECTRONICSVLSICS Design
Due to high power consumption and difficulties with minimizing the CMOS transistor size, molecular electronics has been introduced as an emerging technology. Further, there have been noticeable advances in fabrication of molecular wires and switches and also molecular diodes can be used for designing different logic circuits. Considering this novel technology, we use molecules as the active components of the circuit, for transporting electric charge. In this paper, a full adder cell based on molecular electronics is presented. This full adder is consisted of resonant tunneling diodes and transistors which are implemented via molecular electronics. The area occupied by this kind of full adder would be much times smaller than the conventional designs and it can be used as the building block of more complex molecular arithmetic circuits.
Here are the key points about NMOS transistor operation in the subthreshold region:
- When 0 < Vgs < Vt, a depletion region forms in the channel due to the electric field repelling majority carriers (holes).
- This depletion region means there are no carriers to conduct current through the channel.
- Only a small leakage current flows, as the channel is not fully "turned on".
- The transistor is not fully on or off in this region - it is said to be weakly inverted. Current has an exponential relationship with Vgs.
- Some applications exploit this behavior for very low power analog/digital circuits.
So in summary, a small current flows due to weak inversion in the
Design of Integrated LC Filter Using Multilayer Flexible Ferrite Sheets iosrjce
This document describes the design of an integrated LC filter using multilayer flexible ferrite sheets. Key points:
- The design aims to integrate an inductor and capacitor using ferrite sheets, which have both magnetic and dielectric properties, to reduce the size of filters in power electronic converters.
- The structure consists of a spiral inductor sandwiched between two ferrite sheets, acting as a magnetic core, with multiple ferrite layers above acting as a dielectric for a multilayer capacitor.
- Analytical equations are provided to calculate the inductance, capacitance, resistance and other parameters of the integrated LC component based on its geometric parameters and material properties.
- A design procedure is outlined to
Introduction gadgets have gained a lot of attention.pdfbkbk37
The document discusses the increasing need for ultra-low power electronic devices due to advances in mobile technology and the internet of things. It covers limitations in further reducing power consumption and scaling transistors according to Moore's Law. Transition metal dichalcogenides are discussed as a potential channel material for ultra-low power transistors due to their ability to achieve high ON/OFF ratios even at the monolayer level. The document also mentions using technology computer-aided design (TCAD) tools like the Quantum Transport Simulator to model and optimize new materials and device geometries.
ECE 6030 Device Electronics discusses advances in low-power electronics and internet-connected devices. As transistors continue to shrink according to Moore's law, new challenges have emerged like increased OFF current. The document discusses approaches to overcoming these challenges, including new materials like transition metal dichalcogenides and their use in ultra-low power transistors. Device and circuit simulation tools are also discussed as important for optimizing new device designs without costly fabrication.
Quantitative Modeling and Simulation of Single-Electron TransistorIRJET Journal
This document discusses quantitative modeling and simulation of the single-electron transistor (SET) using MATLAB Simulink. The SET is a nano-scaled transistor that operates using quantum tunneling of single electrons. The document describes the basic theory of quantum tunneling and Coulomb blockade in SETs. It then discusses modeling the SET using a master equation approach and simulating its DC characteristics such as current oscillations. Parameters like junction capacitance, gate capacitance, and temperature are varied to analyze their effect on SET characteristics.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
This document summarizes research on scaling limits of CMOS devices and proposed structures to overcome these limits. It first discusses how quantum mechanical effects and short channel effects become problematic as devices are scaled down, limiting further scaling. It then reviews various structures proposed by other researchers, including fully depleted SOI MOSFETs with strained silicon channels, dual material gates, and gate-all-around structures. Finally, it proposes a new structure combining these elements: a fully depleted SOI gate-all-around MOSFET using a strained silicon channel and dual material gate to address scaling challenges while improving performance.
The document presents a study of ballistic transport in carbon nanotube field effect transistors (CNTFETs) using numerical modeling and simulation. It compares the performance of Schottky-barrier CNTFETs and MOSFET-like CNTFETs. Key findings include that thinner oxides and higher dielectric constant materials provide better electrostatic gate control and higher on-off current ratios, and that doped contact CNTFETs generally exhibit better performance than Schottky-barrier CNTFETs. The study provides insights into scaling effects and quantum phenomena in CNTFET devices.
CNFET BASED BASIC GATES AND A NOVEL FULLADDER CELLVLSICS Design
In this paper two novel high performance designs for AND and OR basic gates and a novel Full-Adder Cell are presented. These designs are based on carbon nanotube technology. In order to compare the proposed designs with previous ones both MOSFET based and CNFET based circuits are selected. By the way the proposed designs have better performance in comparison with previous designs in terms of speed, power consumption and power-delay product (PDP).
Structural and Optical properties of Multiwalled Carbon Nanotubes Modified by...TELKOMNIKA JOURNAL
Structure, chemical, and physical properties of Multiwalled Carbon Nanotubes (MWCNTs) after
modification by dielectric barrier discharge (DBD) at atmospheric pressure is investigated using
Transmission Electron Microscopy (TEM), Raman and Uv-vis-NIR spectroscopy. Effects of plasma
treatment time on MWCNTs are analyzed. TEM result shows that during the short period of plasma
treatment time of 5 minutes, the tube surface experienced a few damages. With increase in plasma
treatment time, the tube surface is damaged to a certain extent. Intensity ratio, ID/IG through Raman
analysis shows a good agreement with TEM. The values of ID/IG of the modified MWCNTs are larger than
those of pristine MWCNTs. An increase of ID/IG indicates that considerable defects are produced on the
surfaces of MWCNTs. The treated MWCNTs has energy band gap compared to zero band gap of
untreated MWCNTs. It is believed that the defect site of MWCNTs can modify the electronics properties of
MWCNTs from being metallic to semiconducting structure, which is applicable for almost all electronics
device applications.
Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
This document discusses MOSFETs and CMOS technology scaling. It begins with an introduction to electronics and transistors before discussing MOSFET structure and operation. The MOSFET I-V characteristics and effects like body effect and channel length modulation are covered. The use of SPICE models to simulate MOSFET behavior is also summarized. The document then addresses challenges with scaling CMOS technology to smaller nodes and how approaches like high-k dielectrics and FinFETs helped overcome these challenges. FinFET structure and advantages over planar MOSFETs are briefly outlined.
This paper presents the design and simulation of a low voltage Si LDMOS transistor using ATLAS SILVACO. The proposed LDMOS structure has a channel length of 0.3 μm and gate length of 0.75 μm, smaller than the reference device. Simulations show the new device has higher breakdown voltage of 13.75 V and lower on resistance compared to the reference LDMOS. Impact ionization occurs away from the drain in the drift region, allowing for the higher breakdown voltage. The feedback capacitance is also reduced compared to the reference device. In summary, the proposed lower voltage LDMOS transistor has a more compact size while improving key characteristics like breakdown voltage and on resistance.
SUB TEN MICRON CHANNEL DEVICES ACHIEVED BY VERTICAL ORGANIC THIN FILM TRANSI...VLSICS Design
The channel lengths of the top contact organic thin film transistors are usually defined during their fabrication by optical lithography or by shadow masking during the metal deposition process. Realizing short channel (sub-ten micron channel length) transistors by lithography will require costly lithography equipment. On the other hand, it is extremely challenging to achieve short channel transistors using the low cost shadow mask process. One low cost method of achieving short channel devices is to build vertical transistors with the transistor, where the channel gets defined in the vertical part of the device. This paper shows that vertical channel top contact organic thin film transistor has been successfullyrealized on the vertical edge of trench. This helped in creating the device with channel lengths less than ten microns, much smaller than what could be typically achieved with the use of shadow masks.
This document discusses carbon nanotube field-effect transistors (CNTFETs) as a potential substitute for MOSFETs. CNTFETs could help overcome limitations of MOSFET scaling by providing higher carrier mobility, excellent electrostatics, and gate control. CNTFETs exhibit advantages like better threshold voltage and subthreshold slope control as well as higher current density and transconductance compared to MOSFETs. However, mass production of CNTFETs faces challenges related to defects, failure rates, and production costs that are higher than for traditional CMOS.
CNTFET is a type of field effect transistor that uses a carbon nanotube as the channel material. Carbon nanotubes have excellent mechanical and electrical properties and allow for 1-D ballistic electron transport. A single-walled carbon nanotube is used as the channel between source and drain contacts in a CNTFET. The gate contact wraps around the carbon nanotube channel, allowing for good electrostatic control of carriers. CNTFETs were first fabricated in 1998 and have properties like high drive current, transconductance, and temperature resilience making them promising for high frequency applications.
A Study On Double Gate Field Effect Transistor For Area And Cost Efficiencypaperpublications3
Abstract: Proposal for a field effect transistor had been presented, with numerical device simulations to verify the title in every manner possible. The two transitional field effect transistors like pMOS and nMOS functions are simultaneously performed, working as one or as the other according to the voltage applied to the gate terminal. Increase in the circuit speed is observed when this technology is implemented on the device suggested with respect to the standard CMOS technology, presented a drastic reduction of number devices and associated parasitic capacitances. In addition to it IC obtained with the proposed device are fully compatible with the standard CMOS technology and the fabrication processes. Fabrication of Static Ram cells with three transistors only with minimum dimensions and a single bit line by saving silicon area and increasing the memory performance with respect to standard CMOS technologies. It is also presented that the fully compatible CMOS process can be used to successfully manufacture the new FET structure.
This document provides information about a course on semiconductor devices, including bipolar junction transistors (BJTs). It lists the course aims as reviewing diode and BJT operation, extending knowledge to include recombination influences, investigating speed limitations, and extracting equivalent circuit models. It recommends textbooks and outlines the course topics as reviewing semiconductor devices and pn diodes, studying long pn diodes incorporating recombination, examining BJT DC operation and switching characteristics, and why studying devices is important.
Simulation study of single event effects sensitivity on commercial power MOSF...journalBEEI
1. The document simulates the effects of single heavy ion radiation on commercial power MOSFETs using Sentaurus TCAD software.
2. The simulation results show that single heavy ion radiation affected the device structure and fluctuated the I-V characteristics of the commercial power MOSFET.
3. The study aims to investigate the sensitivity of power MOSFETs to single event effects when exposed to radiation environments, which is important for applications in areas like space systems.
This document summarizes research on gate leakage reduction techniques for deep submicron integrated circuits. It discusses how gate leakage has become a significant source of power dissipation as devices are scaled down, due to increased subthreshold leakage, gate oxide tunneling, and reverse bias junction leakage. The document then describes complementary pass transistor logic (CPL) and differential cascade voltage switch logic (DCVSL) as logic families that aim to reduce static power by using fewer transistors and eliminating inverters.
A NEW FULL ADDER CELL FOR MOLECULAR ELECTRONICSVLSICS Design
Due to high power consumption and difficulties with minimizing the CMOS transistor size, molecular electronics has been introduced as an emerging technology. Further, there have been noticeable advances in fabrication of molecular wires and switches and also molecular diodes can be used for designing different logic circuits. Considering this novel technology, we use molecules as the active components of the circuit, for transporting electric charge. In this paper, a full adder cell based on molecular electronics is presented. This full adder is consisted of resonant tunneling diodes and transistors which are implemented via molecular electronics. The area occupied by this kind of full adder would be much times smaller than the conventional designs and it can be used as the building block of more complex molecular arithmetic circuits.
Here are the key points about NMOS transistor operation in the subthreshold region:
- When 0 < Vgs < Vt, a depletion region forms in the channel due to the electric field repelling majority carriers (holes).
- This depletion region means there are no carriers to conduct current through the channel.
- Only a small leakage current flows, as the channel is not fully "turned on".
- The transistor is not fully on or off in this region - it is said to be weakly inverted. Current has an exponential relationship with Vgs.
- Some applications exploit this behavior for very low power analog/digital circuits.
So in summary, a small current flows due to weak inversion in the
Design of Integrated LC Filter Using Multilayer Flexible Ferrite Sheets iosrjce
This document describes the design of an integrated LC filter using multilayer flexible ferrite sheets. Key points:
- The design aims to integrate an inductor and capacitor using ferrite sheets, which have both magnetic and dielectric properties, to reduce the size of filters in power electronic converters.
- The structure consists of a spiral inductor sandwiched between two ferrite sheets, acting as a magnetic core, with multiple ferrite layers above acting as a dielectric for a multilayer capacitor.
- Analytical equations are provided to calculate the inductance, capacitance, resistance and other parameters of the integrated LC component based on its geometric parameters and material properties.
- A design procedure is outlined to
Introduction gadgets have gained a lot of attention.pdfbkbk37
The document discusses the increasing need for ultra-low power electronic devices due to advances in mobile technology and the internet of things. It covers limitations in further reducing power consumption and scaling transistors according to Moore's Law. Transition metal dichalcogenides are discussed as a potential channel material for ultra-low power transistors due to their ability to achieve high ON/OFF ratios even at the monolayer level. The document also mentions using technology computer-aided design (TCAD) tools like the Quantum Transport Simulator to model and optimize new materials and device geometries.
ECE 6030 Device Electronics discusses advances in low-power electronics and internet-connected devices. As transistors continue to shrink according to Moore's law, new challenges have emerged like increased OFF current. The document discusses approaches to overcoming these challenges, including new materials like transition metal dichalcogenides and their use in ultra-low power transistors. Device and circuit simulation tools are also discussed as important for optimizing new device designs without costly fabrication.
Quantitative Modeling and Simulation of Single-Electron TransistorIRJET Journal
This document discusses quantitative modeling and simulation of the single-electron transistor (SET) using MATLAB Simulink. The SET is a nano-scaled transistor that operates using quantum tunneling of single electrons. The document describes the basic theory of quantum tunneling and Coulomb blockade in SETs. It then discusses modeling the SET using a master equation approach and simulating its DC characteristics such as current oscillations. Parameters like junction capacitance, gate capacitance, and temperature are varied to analyze their effect on SET characteristics.
Accurate leakage current models for MOSFET nanoscale devices IJECEIAES
This paper underlines a closed form of MOSFET transistor’s leakage current mechanisms in the sub 100nmparadigm.The incorporation of drain induced barrier lowering (DIBL), Gate Induced Drain Lowering (GIDL) and body effect (m) on the sub-threshold leakage (I sub ) was investigated in detail. The Band-To-Band Tunneling (I BTBT ) due to the source and Drain PN reverse junction were also modeled with a close and accurate model using a rectangular approximation method (RJA). The three types of gate leakage (I G ) were also modeled and analyzed for parasitic (I GO ), inversion channel (I GC ), and gate substrate (I GB ). In addition, the leakage resources due to the aggressive reduction in the oxide thickness (<5nm) have been investigated. Simulation results using HSPICE exhibits a tremendous agreement with the BSIM4 model. The dominant value of the sub-threshold leakage was due to the DIBL and GIDL effects. Various recommendations regarding minimizing the leakage current at both device level and the circuit level were suggested at the end of this paper.
This document describes a novel design method for a 3 to 8 decoder circuit using a hybrid single electron transistor (SET)-CMOS approach. It begins by providing background on SETs and their advantages over traditional CMOS at nanoscale, including ultra-low power dissipation. It then presents the design and simulation of basic logic gates like inverters and XOR gates using a hybrid CMOS-SET approach. Finally, it describes the design and simulation of a 3 to 8 decoder circuit implemented using the hybrid logic gates. The simulation results show the decoder circuit operates correctly at room temperature. The hybrid CMOS-SET approach allows leveraging the benefits of both technologies for low-power nanoscale circuit design.
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTORmsejjournal
Owing to the fact that MOSFETs can be effortlessly assimilated into ICs, they have become the heart of the
growing semiconductor industry. The need to procure low power dissipation, high operating speed and
small size requires the scaling down of these devices. This fully serves the Moore’s Law. But scaling down
comes with its own drawbacks which can be substantiated as the Short Channel Effect. The working of the
device deteriorates owing to SCE. In this paper, the problems of device downsizing as well as how the use
of SED based devices prove to be a better solution to device downsizing has been presented. As such the
study of Short Channel effects as well as the issues associated with a nanoMOSFET is provided. The study
of the properties of several Quantum dot materials and how to choose the best material depending on the
observation of clear Coulomb blockade is done. Specifically, a study of a graphene single electron
transistor is reviewed. Also a theoretical explanation to a model designed to tune the movement of
electrons with the help of a quantum wire has been presented.
REVIEW PAPER ON NEW TECHNOLOGY BASED NANOSCALE TRANSISTORmsejjournal
The document discusses new nanoscale transistor technology based on single electron transistors (SETs). It begins by describing the need to continue scaling down traditional MOSFET transistors to achieve Moore's Law. However, as sizes shrink below 10nm, MOSFETs experience short channel effects that degrade performance. SETs provide a potential solution as they can be designed at the nanoscale and exhibit clear Coulomb blockade effects. The document reviews different SET designs using various quantum dot materials like silicon, germanium, and graphene. It also discusses how electron transport in SETs can be tuned using quantum wires.
Central Electric Field and Threshold Voltage in Accumulation Mode Junctionles...IJECEIAES
Transfer characteristics is presented using analytical potential distribution of accumulation-mode junctionless cylindrical surrounding-gate (JLCSG) MOSFET, and deviation of center electric field at threshold voltage is analyzed for channel length and oxide thickness. Threshold voltages presented in this paper is good agreement with results of other compared papers, and transfer characteristics is agreed with those of two-dimensional simulation. The most important factor to determine threshold voltage is center electric field at source because the greater part of electron flows through center axis of JLCSG MOSFET. As a result of analysis for center electric field at threshold voltage, center electric field is decreased with reduction of channel length due to drain induced barrier lowering. Center electric field is increased with decrease of oxide thickness, and deviation of center electric field for channel length is significantly occurred with decrease of oxide thickness.
Quantum tunneling occurs when a particle passes through a barrier that it classically could not surmount. Tunnel junctions are created by separating two conductors with a thin insulator, allowing electrons to tunnel through. The metal-oxide tunnel transistor is a promising device for future scaling that uses gate modulation of Fowler-Nordheim tunneling between a metal source and drain through a thin insulating body. However, thermal leakage limits its room-temperature operation currently.
small geometry effect and working of solar cellShivank Rastogi
The document discusses MOSFET theory and operation, including:
- MOSFET device structure and types (depletion and enhancement mode).
- Regions of operation depending on gate-source and drain-source voltages.
- Effects that occur at small device geometries including short channel effects like drain-induced barrier lowering, velocity saturation, and hot carriers.
- Operation and efficiency of solar cells made from semiconductor materials, and how efficiency depends on the material bandgap. Design improvements like PERL cells are also discussed.
Design and Analysis of Power and Variability Aware Digital Summing CircuitIDES Editor
This document analyzes and compares different 1-bit digital summing circuit topologies in terms of their robustness against process, voltage, and temperature variations at the 22nm technology node. It finds that the transmission gate-based topology is the most robust, with the tightest spread in propagation delay, power dissipation, and energy-delay product. It then proposes a transmission gate-based digital summing circuit implemented using carbon nanotube field-effect transistors, which offers even greater robustness against PVT variations compared to an implementation using traditional MOSFETs.
Frequency Dependent Characteristics of OGMOSFETidescitation
Miniaturization in length, lowering of power,
increase in package density and sensitivity to light of
MOSFET leads it as the potential candidate for RF application.
As device is expected to operate at RF, it is essential to observe
its frequency dependent characteristics at RF. In this paper
frequency dependent electro optical characteristics of
Optically Gated Metal Oxide Semiconductor Field Effect
Transistor (OGMOSFET) are investigated numerically.
Variation of drain current-voltage characteristics, gate
capacitance and transconductance of OGMOSFET, with
varying frequency, is reported. MOSFET having length of
0.35μm is selected for investigation, which is optically gated
with incident radiations of optical power of 0.25mW and
wavelength of 800nm. MATLAB is used as computational
platform to test and tune the results. Results show that
increase in modulating frequency of OGMOSFET decreases
drain current, gate capacitance, transconductance and output
conductance. This is due to decrease in life time of inversion
charges at very high frequencies. Operating bandwidth of the
device is up to 4GHz.
Performance analysis of a monopole antenna with fluorescent tubes at 4.9 g hz...Alexander Decker
This document describes the analysis of a monopole antenna design with fluorescent tubes at an operating frequency of 4.9 GHz. The antenna structure consists of 12 commercial fluorescent tubes surrounding a monopole antenna located in the center of a circular ground plane. The performance of the antenna design is analyzed using CST Microwave Studio software. Parameters like return loss, radiation pattern, and gain are evaluated to analyze the antenna's performance. The fluorescent tubes act as plasma reflectors when electrified, trapping radiation inside and improving the antenna's performance for potential military applications.
The document discusses transistors, including:
- Transistors are electronic devices made of three layers of semiconductor material that can act as insulators or conductors.
- The history of transistors began with the vacuum tube triode in 1906 and development of the first transistor by Bardeen and Brattain in 1947.
- Transistors come in different types like BJT, UJT, FET, and MOSFET and are used as switches, amplifiers, and in other applications due to their ability to control electric current.
- Continued development aims to improve transistor technology through methods like 3D transistors and use of new materials like carbon nanotubes.
The Performance of an Integrated Transformer in a DC/DC ConverterTELKOMNIKA JOURNAL
The separation between the low-voltage part and high-voltage part of the converter is formed by a
transformer that transfers power while jamming the DC ring. The resonant mode power oscillator is utilized
to allow elevated competence power transfer. The on-chip transformer is probable to have elevated value
inductance, elevated quality factors and elevated coupling coefficient to decrease the loss in the
oscillation. The performance of a transformer is extremely dependent on the structure, topology and other
essential structures that create it compatible with the integrated circuits IC process such as patterned
ground shield (PGS). Different types of transformers are modeled and simulated in MATLAB; the
performances are compared to select the optimum design. The on-chip transformer model is simulated
and the Results of MATLAB simulation are exposed, showing an excellent agreement in radio frequency
RF.
The document discusses transistors, including:
- Transistors are electronic devices made of three layers of semiconductor material that can act as insulators or conductors.
- The first transistor was invented in 1947 by John Bardeen and Walter Brattain.
- There are several types of transistors including BJT, UJT, FET, and MOS transistors. BJTs use both electrons and holes, while FETs use only one type of carrier.
- Transistors have wide applications as switches, amplifiers, and in digital circuits. Recent developments include 3D transistors made using tri-gate technology for improved performance and efficiency.
Simulation and Modeling of Silicon Based Single Electron TransistorIJECEIAES
In this work, we simulated and modeled silicon quantum dot based single electron transistor (SET). We simulated the device using non-equilibrium Green’s function (NEGF) formalism in transport direction coupled with Schrodinger equation in transverse directions. The characteristics of SET such as Coulomb blockade and Coulomb diamonds were observed. We also present a new efficient model to calculate the current voltage (IV) characteristics of the SET. The IV characteristic achieved from the model are very similar to those from simulations both in shape and magnitude. The proposed model is capable of reproducing the Coulomb diamond diagram in good agreement with the simulations. The model, which is based on transmission spectrum, is simple, efficient and provides insights on the physics of the device. The transmission spectrum at equilibrium is achieved from simulations and given as input to the model. The model then calculates the evolved transmission spectra at non-equilibrium conditions and evaluates the current using Landauers formula.
SINGLE ELECTRON TRANSISTOR: APPLICATIONS & PROBLEMSVLSICS Design
1) Single electron transistors (SETs) function by controlling the transfer of individual electrons between small conducting islands. They exhibit quantum properties like Coulomb blockade and oscillations that enable applications.
2) SETs consist of a small conducting island coupled to source and drain leads by tunnel junctions. Current flows when the applied voltage exceeds the threshold voltage needed to overcome Coulomb blockade.
3) Potential SET applications include ultrasensitive electrometry, quantum dot spectroscopy, standards for current and temperature, and detection of terahertz radiation. Challenges include fabricating small enough islands and addressing issues like background charge.
Ähnlich wie DESIGN OF DIFFERENT DIGITAL CIRCUITS USING SINGLE ELECTRON DEVICES (20)
Modelling and Simulation of Composition and Mechanical Properties of High Ent...msejjournal
Magnesium alloys are high potential materials for application in the aerospace and automotive industries
due to their lightweight properties. They can help to lower dead weight and fuel consumption to contribute
to sustainability and efficiency. It is possible to achieve high specific strength and high stiffness of the
alloys by varying compositions of alloying elements. Applications of magnesium are limited due to its low
strength and relatively low stiffness. This research focuses on a recipe of multi component alloys of
magnesium with varied percentages of Mg, Al, Cu, Mn and Zn obtained from literature and optimizes the
percentage compositions to obtain for high specific strength and specific stiffness. Relationships among
percentage constituents of the alloy components are examined in Matlab R2022b using multiple linear
regression. Optimization is achieved using genetic algorithm to determine the specific strengths and
stiffness. The resulting optimal alloy component percentages by weight are used for microstructure
simulation of thermodynamic properties, diffusion and phase transformations of proposed alloy is done in
MatCalc software version 6.04. Results show potential for improved mechanical properties resulting from
disordered structure in the high entropy magnesium alloy. Future research should focus on production and
characterization of the proposed alloy.
Thermal and Metrological Studies on YTTRIA Stabilized Zirconia Thermal Barrie...msejjournal
Thermal Barrier Coatings (TBCs), routinely prepared from Ceramic based compositions (typically
8%Y2O3-ZrO2or 8YSZ) are being engineered to protect the metallic components from degradation in
applications like gas turbines, jet and automotive engines. With a goal of finding improved TBC materials
a wide variety of ceramics are being researched worldwide. Before physically preparing the TBCs of
uncommon compositions in the laboratory, their suitability to perform can be predicted. Limited
accessibility to detailed and realistic information on the influence of newer compositions (other than 8YSZ)
on TBCs warrants methods to obtain this information.
In this paper, 8YSZ TBCs coated onto aluminium substratesare studied for thermal fatigue, thermal barrier
and materials characteristics to determine the reliability of the coating configuration to withstand the
harshness of test conditions under the framework of experiments. Thereafter, the results have been used to
corroboratethe developed simulation model. Results obtained via thermal tests confirm the suitability of the
model and we can predict the thermal barrier effects of TBCs when prepared from materials other than
YSZ.
Advances in Materials Science and Engineering: An International Journal (MSEJ)msejjournal
Advances in Materials Science and Engineering: An International Journal (MSEJ) is a quarterly peer-reviewed journal that publishes articles on theoretical and practical aspects of materials science and engineering. The goal of the journal is to bring together researchers and practitioners from academia and industry to focus on advancements in materials science and engineering and establish new collaborations. Original research papers and review articles are invited for publication in areas including biomaterials, composites, nanomaterials, and polymers.
New Experiment System for the Interaction Between Soft Rock and Water : A Cas...msejjournal
The strength of rock strongly depends on the water content especially when the rocks contain clay
materials. The interaction between soft rock and water always threaten the soft rock engineering projects.
For this problem, new sets of laboratory experiment systems are developed to simulate the interaction
between soft rock and water or vapor. In this paper, the principles of experiment systems are introduced
with particular reference to the application on soft rock in Mogao Grottoes, one of the world famous
ancient sites in China. Two kinds of rock samples, the sandstone and muddy sandstone, are obtained by insitu sampling system. Then the laboratory experiments are performed under different environment
conditions. By the specific boundary conditions design, the physical-chemical effect and mechanic effect on
water absorption of rock samples are separated for further mechanism study by the experiment system, and
the different hydrological actions of water and vapor under variable experiment environment are obtained.
The interaction mechanism is discussed with assistant methods, such as SEM (Scanning Electron
Microscope), mercury injection test, X-ray diffraction analysis and etc. With the relation between water
content and soft rock strength, the study may provide guidance and basis for the soft rock engineering in
the future.
International Conference on Embedded Systems and VLSI (EMVL 2023)msejjournal
International Conference on Embedded Systems and VLSI (EMVL 2023) will provide an excellent International forum for sharing knowledge and results in theory, methodology and applications of Embedded Systems.
Advances in Materials Science and Engineering: An International Journal (MSEJ)msejjournal
Advances in Materials Science and Engineering: An International Journal (MSEJ) is a quarterly open access peer-reviewed journal that publishes articles which contribute new results in all areas of the Materials Science and Engineering. The journal is devoted to the publication of high quality papers on theoretical and practical aspects of Materials Science and Engineering.
Modeling, Analyzing and Safety Aspects of Torsion and Noise Effects on Round ...msejjournal
Each material has its own effect and behavior on external impacts like heat, force, tension, compression,
torsion etc. It is important to study and analyze these behaviors before selecting a material for an
engineering application in the design aspects itself. If predicted values analyzed by both mathematical and
software are available it is easy to get the reliable details in the pre design itself. By this one can ensure the
safety of the component and the system also. In this investigation, the effects of torsional loads on mild steel
round shafts with various diameters and lengths have been analyzed. The additional effects like angle of
rotation, rpm and duration also considered to find the optimum predicted value. The data observed by
various experiments are analyzed by design of experiments especially by response surface methodology.
Minitab software is used for canalization. The data are tabulated and kept for future reference. Noise effect
due to the gradual torsional load performed in the gear box and other rotating components is also studied
for healthy working environment. The nature and characteristics of material also be explained by this noise
analysis.
Advances in Materials Science and Engineering: An International Journal (MSEJ)msejjournal
Advances in Materials Science and Engineering: An International Journal (MSEJ) is a quarterly open access peer-reviewed journal that publishes articles which contribute new results in all areas of the Materials Science and Engineering. The journal is devoted to the publication of high quality papers on theoretical and practical aspects of Materials Science and Engineering.
The goal of this journal is to bring together researchers and practitioners from academia and industry to focus on Materials Science and Engineering advancements, and establishing new collaborations in these areas. Original research papers, state-of-the-art reviews are invited for publication in all areas of Materials Science and Engineering.
Advances in Materials Science and Engineering: An International Journal (MSEJ)msejjournal
Advances in Materials Science and Engineering: An International Journal (MSEJ) is a quarterly open access peer-reviewed journal that publishes articles which contribute new results in all areas of the Materials Science and Engineering. The journal is devoted to the publication of high quality papers on theoretical and practical aspects of Materials Science and Engineering.
On Decreasing of Dimensions of Field-Effect Transistors with Several Sourcesmsejjournal
We analyzed mass and heat transport during manufacturing field-effect heterotransistors with several
sources to decrease their dimensions. Framework the result of manufacturing it is necessary to manufacture
heterostructure with specific configuration. After that it is necessary to dope required areas of the heterostructure by diffusion or ion implantation to manufacture the required type of conductivity (p or n). After
the doping it is necessary to do optimize annealing. We introduce an analytical approach to prognosis mass
and heat transport during technological processes. Using the approach leads to take into account nonlinearity of mass and heat transport and variation in space and time (at one time) physical parameters of these
processes
Advances in Materials Science and Engineering: An International Journal (MSEJ)msejjournal
Advances in Materials Science and Engineering: An International Journal (MSEJ) is a quarterly open access peer-reviewed journal that publishes articles which contribute new results in all areas of the Materials Science and Engineering. The journal is devoted to the publication of high quality papers on theoretical and practical aspects of Materials Science and Engineering.
The goal of this journal is to bring together researchers and practitioners from academia and industry to focus on Materials Science and Engineering advancements, and establishing new collaborations in these areas. Original research papers, state-of-the-art reviews are invited for publication in all areas of Materials Science and Engineering.
Advances in Materials Science and Engineering: An International Journal (MSEJ)msejjournal
Advances in Materials Science and Engineering: An International Journal (MSEJ) is a quarterly open access peer-reviewed journal that publishes articles which contribute new results in all areas of the Materials Science and Engineering. The journal is devoted to the publication of high quality papers on theoretical and practical aspects of Materials Science and Engineering.
The goal of this journal is to bring together researchers and practitioners from academia and industry to focus on Materials Science and Engineering advancements, and establishing new collaborations in these areas. Original research papers, state-of-the-art reviews are invited for publication in all areas of Materials Science and Engineering.
Using Advanced Inspection Method (Three-Dimensional Ultrasonic) in Recognitio...msejjournal
In this study, using Harfang Code 32 device, the slag catcher pipelines in one of the South Pars phases
were tested. In radiography method of these lines, no clear defect was observed in radiographic films due
to the high thickness of 40 mm. However, marvelous results were obtained using advanced ultrasonic.
Review and analysis of the results will result in high potential of three-dimensional ultrasonic method in
identifying defects in pipelines with high thicknesses and preventing financial and life-threatening risks
during the use of these refineries in the future.
Advances in Materials Science and Engineering: An International Journal (MSEJ)msejjournal
Advances in Materials Science and Engineering: An International Journal (MSEJ) is a quarterly open access peer-reviewed journal that publishes articles which contribute new results in all areas of the Materials Science and Engineering. The journal is devoted to the publication of high quality papers on theoretical and practical aspects of Materials Science and Engineering.
RESULTS OF FINITE ELEMENT ANALYSIS FOR INTERLAMINAR FRACTURE REINFORCED THERM...msejjournal
The double cantilever beam (DCB) is widely used for fracture toughness testing and it has become popular
for opening-mode (mode I) delamination testing of laminated composites. Delamination is a crack that
forms between the adjacent plies of a composite laminate at the brittle polymer resin. This study was
conducted to emphasize the need for a better understanding of the DCB specimen of different fabric
reinforced systems (carbon fibers) with a thermoplastic matrix (EP, PEI), by using the extended finite
element method (X-FEM). It is well known that in fabric reinforced composites fracture mechanisms
include microcracking in front of the crack tip, fiber bridging and multiple cracking, and both contribute
considerably to the high interlaminar fracture toughness measured. That means, the interlaminar fracture
toughness of a composite is not controlled by a single material parameter, but is a result of a complex
interaction of resin, fiber and interface properties.
Advances in Materials Science and Engineering: An International Journal (MSEJ)msejjournal
Advances in Materials Science and Engineering: An International Journal (MSEJ) is a quarterly open access peer-reviewed journal that publishes articles which contribute new results in all areas of the Materials Science and Engineering. The journal is devoted to the publication of high quality papers on theoretical and practical aspects of Materials Science and Engineering.
The goal of this journal is to bring together researchers and practitioners from academia and industry to focus on Materials Science and Engineering advancements, and establishing new collaborations in these areas. Original research papers, state-of-the-art reviews are invited for publication in all areas of Materials Science and Engineering.
Flammability Characteristics of Chemical Treated Woven Hemp Fabricmsejjournal
Woven hemp fabric was treated with sodium hydroxide, commercial flame retardant chemical, and
combination of both to increase its fire-retardant properties. Treatments of fire-retardant changed the
properties of woven hemp fabric such as increased its fabric shrinkage and density of fibres which ranges
from 0.67 to 5% and 1.43 to 1.53 g/cm3
respectively. After the treatment, the fire retardancy of the fabric
increased tremendously which was observed by the burning, thermogravimetry and limiting oxygen index
tests. Some of the samples were not burnt when exposed to flame source and the burning rate needed to be
measured under exaggeration of flame at longer time. The limiting oxygen index value increased from 18.6
to 51 after the treatments which explained the scenario happened in the burning tests. Nevertheless, its
mechanical properties decreased slightly that ranges from 18 to 32% and 23 to 39% for warp and weft
respectively compared to untreated fibre.
Advances in Materials Science and Engineering: An International Journal (MSEJ) msejjournal
Advances in Materials Science and Engineering: An International Journal (MSEJ) is a quarterly open access peer-reviewed journal that publishes articles which contribute new results in all areas of the Materials Science and Engineering. The journal is devoted to the publication of high quality papers on theoretical and practical aspects of Materials Science and Engineering.
The goal of this journal is to bring together researchers and practitioners from academia and industry to focus on Materials Science and Engineering advancements, and establishing new collaborations in these areas. Original research papers, state-of-the-art reviews are invited for publication in all areas of Materials Science and Engineering.
Advances in Materials Science and Engineering: An International Journal (MSEJ) msejjournal
Advances in Materials Science and Engineering: An International Journal (MSEJ) is a quarterly open access peer-reviewed journal that publishes articles which contribute new results in all areas of the Materials Science and Engineering. The journal is devoted to the publication of high quality papers on theoretical and practical aspects of Materials Science and Engineering.
The goal of this journal is to bring together researchers and practitioners from academia and industry to focus on Materials Science and Engineering advancements, and establishing new collaborations in these areas. Original research papers, state-of-the-art reviews are invited for publication in all areas of Materials Science and Engineering.
Advances in Materials Science and Engineering: An International Journal (MSEJ)msejjournal
Advances in Materials Science and Engineering: An International Journal (MSEJ) is a quarterly open access peer-reviewed journal that publishes articles which contribute new results in all areas of the Materials Science and Engineering. The journal is devoted to the publication of high quality papers on theoretical and practical aspects of Materials Science and Engineering.
The goal of this journal is to bring together researchers and practitioners from academia and industry to focus on Materials Science and Engineering advancements, and establishing new collaborations in these areas. Original research papers, state-of-the-art reviews are invited for publication in all areas of Materials Science and Engineering.
How to Fix the Import Error in the Odoo 17Celine George
An import error occurs when a program fails to import a module or library, disrupting its execution. In languages like Python, this issue arises when the specified module cannot be found or accessed, hindering the program's functionality. Resolving import errors is crucial for maintaining smooth software operation and uninterrupted development processes.
Strategies for Effective Upskilling is a presentation by Chinwendu Peace in a Your Skill Boost Masterclass organisation by the Excellence Foundation for South Sudan on 08th and 09th June 2024 from 1 PM to 3 PM on each day.
A workshop hosted by the South African Journal of Science aimed at postgraduate students and early career researchers with little or no experience in writing and publishing journal articles.
Leveraging Generative AI to Drive Nonprofit InnovationTechSoup
In this webinar, participants learned how to utilize Generative AI to streamline operations and elevate member engagement. Amazon Web Service experts provided a customer specific use cases and dived into low/no-code tools that are quick and easy to deploy through Amazon Web Service (AWS.)
Chapter wise All Notes of First year Basic Civil Engineering.pptxDenish Jangid
Chapter wise All Notes of First year Basic Civil Engineering
Syllabus
Chapter-1
Introduction to objective, scope and outcome the subject
Chapter 2
Introduction: Scope and Specialization of Civil Engineering, Role of civil Engineer in Society, Impact of infrastructural development on economy of country.
Chapter 3
Surveying: Object Principles & Types of Surveying; Site Plans, Plans & Maps; Scales & Unit of different Measurements.
Linear Measurements: Instruments used. Linear Measurement by Tape, Ranging out Survey Lines and overcoming Obstructions; Measurements on sloping ground; Tape corrections, conventional symbols. Angular Measurements: Instruments used; Introduction to Compass Surveying, Bearings and Longitude & Latitude of a Line, Introduction to total station.
Levelling: Instrument used Object of levelling, Methods of levelling in brief, and Contour maps.
Chapter 4
Buildings: Selection of site for Buildings, Layout of Building Plan, Types of buildings, Plinth area, carpet area, floor space index, Introduction to building byelaws, concept of sun light & ventilation. Components of Buildings & their functions, Basic concept of R.C.C., Introduction to types of foundation
Chapter 5
Transportation: Introduction to Transportation Engineering; Traffic and Road Safety: Types and Characteristics of Various Modes of Transportation; Various Road Traffic Signs, Causes of Accidents and Road Safety Measures.
Chapter 6
Environmental Engineering: Environmental Pollution, Environmental Acts and Regulations, Functional Concepts of Ecology, Basics of Species, Biodiversity, Ecosystem, Hydrological Cycle; Chemical Cycles: Carbon, Nitrogen & Phosphorus; Energy Flow in Ecosystems.
Water Pollution: Water Quality standards, Introduction to Treatment & Disposal of Waste Water. Reuse and Saving of Water, Rain Water Harvesting. Solid Waste Management: Classification of Solid Waste, Collection, Transportation and Disposal of Solid. Recycling of Solid Waste: Energy Recovery, Sanitary Landfill, On-Site Sanitation. Air & Noise Pollution: Primary and Secondary air pollutants, Harmful effects of Air Pollution, Control of Air Pollution. . Noise Pollution Harmful Effects of noise pollution, control of noise pollution, Global warming & Climate Change, Ozone depletion, Greenhouse effect
Text Books:
1. Palancharmy, Basic Civil Engineering, McGraw Hill publishers.
2. Satheesh Gopi, Basic Civil Engineering, Pearson Publishers.
3. Ketki Rangwala Dalal, Essentials of Civil Engineering, Charotar Publishing House.
4. BCP, Surveying volume 1
ISO/IEC 27001, ISO/IEC 42001, and GDPR: Best Practices for Implementation and...PECB
Denis is a dynamic and results-driven Chief Information Officer (CIO) with a distinguished career spanning information systems analysis and technical project management. With a proven track record of spearheading the design and delivery of cutting-edge Information Management solutions, he has consistently elevated business operations, streamlined reporting functions, and maximized process efficiency.
Certified as an ISO/IEC 27001: Information Security Management Systems (ISMS) Lead Implementer, Data Protection Officer, and Cyber Risks Analyst, Denis brings a heightened focus on data security, privacy, and cyber resilience to every endeavor.
His expertise extends across a diverse spectrum of reporting, database, and web development applications, underpinned by an exceptional grasp of data storage and virtualization technologies. His proficiency in application testing, database administration, and data cleansing ensures seamless execution of complex projects.
What sets Denis apart is his comprehensive understanding of Business and Systems Analysis technologies, honed through involvement in all phases of the Software Development Lifecycle (SDLC). From meticulous requirements gathering to precise analysis, innovative design, rigorous development, thorough testing, and successful implementation, he has consistently delivered exceptional results.
Throughout his career, he has taken on multifaceted roles, from leading technical project management teams to owning solutions that drive operational excellence. His conscientious and proactive approach is unwavering, whether he is working independently or collaboratively within a team. His ability to connect with colleagues on a personal level underscores his commitment to fostering a harmonious and productive workplace environment.
Date: May 29, 2024
Tags: Information Security, ISO/IEC 27001, ISO/IEC 42001, Artificial Intelligence, GDPR
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Reimagining Your Library Space: How to Increase the Vibes in Your Library No ...Diana Rendina
Librarians are leading the way in creating future-ready citizens – now we need to update our spaces to match. In this session, attendees will get inspiration for transforming their library spaces. You’ll learn how to survey students and patrons, create a focus group, and use design thinking to brainstorm ideas for your space. We’ll discuss budget friendly ways to change your space as well as how to find funding. No matter where you’re at, you’ll find ideas for reimagining your space in this session.
Main Java[All of the Base Concepts}.docxadhitya5119
This is part 1 of my Java Learning Journey. This Contains Custom methods, classes, constructors, packages, multithreading , try- catch block, finally block and more.
How to Setup Warehouse & Location in Odoo 17 InventoryCeline George
In this slide, we'll explore how to set up warehouses and locations in Odoo 17 Inventory. This will help us manage our stock effectively, track inventory levels, and streamline warehouse operations.
This presentation includes basic of PCOS their pathology and treatment and also Ayurveda correlation of PCOS and Ayurvedic line of treatment mentioned in classics.
DESIGN OF DIFFERENT DIGITAL CIRCUITS USING SINGLE ELECTRON DEVICES
1. Advances in Materials Science and Engineering: An International Journal (MSEJ), Vol. 3, No. 1, March 2016
DOI:10.5121/msej.2016.3102 21
DESIGN OF DIFFERENT DIGITAL CIRCUITS USING
SINGLE ELECTRON DEVICES
BananiTalukdar1
, Dr.P.C.Pradhan2
and Amit Agarwal3
1
Department of Electronics & Communication Engineering, Sikkim Manipal Institute of
Technology, Majitar, East Sikkim.
2
Department of Electronics & Communication Engineering, Sikkim Manipal Institute of
Technology, Majitar, East Sikkim.
3
Department of Electronics & Communication Engineering, Sikkim Manipal Institute of
Technology, Majitar, East Sikkim.
ABSTRACT
Single Electron transistor (SET) is foreseen as an excellently growing technology. The aim of this paper is
to present in short the fundamentals of SET as well as to realize its application in the design of single
electron device based novel digital logic circuits with the help of a Monte Carlo based simulator. A Single
Electron Transistors (SET) is characterized by two most substantial determinants. One is very low power
dissipation while the other is its small stature that makes it a favorable suitor for the future generation of
very high level integration. With the utilization of SET, technology is moving past CMOS age resulting in
power efficient, high integrity, handy and high speed devices. Conducting a check on the transport of single
electrons is one of the most stirring aspects of SET technologies. Apparently, Monte Carlo technique is in
vogue in terms of simulating SED based circuits. Hence, a MC based tool called SIMON 2.0 is exercised
upon for the design and simulation of these digital logic circuits. Further, an efficient functioning of the
logic circuits such as multiplexers, decoders, adders and converters are illustrated and established by
means of circuit simulation using SIMON 2.0 simulator.
KEYWORDS
Coulomb Blockade, Single Electron Transistor (SET), tunnelling, Quantum Dot, Tunnelling Rate, CMOS,
multiplexers, decoders, adders, Binary to Gray code converter, Gray to Binary Code converter, SIMON.
1. INTRODUCTION
One of the extraordinary creations of the 20th
century is the semiconductor transistor. The last
decade has seen a startling shrinkage in the feature size of MOS based circuits and an upsurge in
the number of transistors. CMOS technology had a supremacy over the decades as bestowed by
Moore’s Law. As a result, the integration scale will be confined since power consumption will
rise above the cooling limit [1]. The SED operation relies on a unique phenomenon called
Coulomb Blockade which occurs in nanostructure and Gorter observed and studied this at a very
low supply voltage [2]. The basic element of a single electron transistor is the tunnel junction [3].
As opposed to a MOSFET, the current conduction in a SET is regulated by the quantum
mechanical tunnelling of electrons through the tunnel barrier. SET has immense potential for the
evolution of future pint sized circuits as work has already been carried out for the evolution of set
logic gate families [4], adders [5],[6], PLAs [7] etc. In this paper, Section II presents a brief
description of MOSFET [8] and scaling limits [9]. In Section III, a review on SET is provided.
Section IV deals with Coulomb Blockade [10] and orthodox theory whereas Section V provides
an insight into the design and simulation results of different digital circuits utilizing MC [11]
based simulator SIMON 2.0 [12].
2. Advances in Materials Science and Engineering: An International Journal (MSEJ), Vol. 3, No. 1, March 2016
22
2. MOSFET
MOSFET became the chief microelectronic device because it proved to be an essential building
block of VLSI circuits. A MOSFET can be defined as a device consisting of four terminals i.e.
drain, source, gate and bulk (see Figure 1).
Figure 1: Generic MOSFET [13]
The MOSFET is primarily used as a switch in digital circuits. Its working can be demonstrated in
the manner that the source and drain are two ends of the switch and the gate controls the turning
ON & OFF of the channel. The gate terminal uses an electric field to control the conduction
through the channel. The gate is insulated from the channel by a delicate layer of silicon dioxide.
MOSFETs can be classified into types: nMOS and pMOS. They basically differ in the voltages
that turn on the switch. Either type of the MOSFET is dependent on the element used to dope the
silicon. In an nMOS transistor, an n-type material like Phosphorus is utilized to heavily dope the
drain and source, while a p-type material is used to lightly dope the channel. On the other hand, in
a pMOS transistor the drain and source are p-type and the bulk and channel are n- type. The
MOSFET also has the ability to segregate the input from the output (gate to source or drain)
which is an inclusion to its potential to implement logic. This ability of the MOSFET entitlesit to
illustrate gain. Since a signal passes through a large number of transistors presuming that a little
voltage is obscured at each transistor, then eventually the signal will deteriorate. The MOSFETs
can be utilized to incorporate further intricate layout, which is another crucial feature of
MOSFETs.The most common logic family, CMOS (Complementary metal-oxide semiconductor),
adopts complimentary nMOS and pMOS transistors to frame logic gates such as inverters and
NAND gates. Advances in the field of electronics have chaperoned to further retrench the size of
the MOSFETs applied in integrated circuits. The decrease in size of the transistors also makes
each one of them swift and they dissipate less power. The transistors become faster because there
is a drop in the capacitance and boost in current. The increase in current can be visualized from
the current flow equation for a transistor, when the gate voltage is at its highest value [13]. The
current through the channel is given by the equation (A first order approximation):
ID = µCOXW/2L (VGS-Vth)2
(1.1)
The above equation illustrates how different criterions of the MOSFET influence its behavior.
An upsurge in power consumption mainly through leakage currents, decreased tolerance for
process variation and roaring costs are some of the aspects that affect the MOSFET scaling
(decrease in size). Merely shrinking the size of the gate length and width will not lead to proper
scaling but also demands a shortening of all the other dimensions; covering the gate/source and
gate/drain alignment and the oxide thickness and depletion layer widths . When we scale down
the depletion layer width it also indicates the need to scale down the doping density. There are
two types of scaling listed below which are frequently used. One is constant field scaling and the
other is constant voltage scaling. When the channel length of a MOSFET device is of same order
3. Advances in Materials Science and Engineering: An International Journal (MSEJ), Vol. 3, No. 1, March 2016
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of magnitude as the depletion layer widths of the source and drain junction, the MOSFET device
is considered to be short [14]. Assuming the channel length to be L; when the channel length L is
reduced, the operation speed as well as the number of components per chip increases. In lieu of
increasing the operating speed and the number of components, the problem of short- channel
effect arises. The short channel effect is marked by two physical phenomena. They are as under:
First, the shortcomings of the electron drift characteristics in the channel. Second, the shortening
of the channel length results in the alteration of the threshold voltage.
3.SINGLE ELECTRON TRANSISTOR
We can characterize a Single electron transistor as a three-terminal, nano-electronic, tunnel
junction device which utilizes a capacitively-coupled input voltage to modulate a drain-source
current aiding as the amplifier output [15]. The tunnel junction is the chief element of a single
electron transistor. The electric charge passes through the tunnel junction as multiples of e, given
tunnelling is a discrete process [16].
Figure 2: Tunnel Junction [17]
Further, when two tunnel junctions are laid down in series configuration, the fundamental
construction of a single electron device can be obtained. The piece of conductor sandwiched
between the two tunnel junctions is generally recognized as the island. It may also be called grain
or a dot.
Figure 3: Structure of SET [18]
In Simple words, we can deliberate SET as a circuit that subsist of islands which are promptly
connected with tunnel junctions and capacitors in conjunction with ideal voltage sources which
control the circuits. In these devices, since kBT<<Ecmin; the operating temperature (T) is
diminished. Here Ecmin is the minimum charging energy. The minimum charging energy is also
identical to the energy level spacing of the island[19]. In the above equation kB is the Boltzmann
constant. The minimum charging energy can be written as:
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Ec = e2
/2CΣ (1.2)
CΣ is the total capacitance of the island. In other words, we can deliberate that the junction
capacitance should be sufficiently small so as to reflect that the charging energy is higher than the
thermal energy. Tunnel junctions, capacitances and voltage sources devise single electron
circuits. Because of the stochastic nature of the electron tunnelling event, a tunnelling electron
can be characterized as a discrete charge. We can note that in the Figure 4, the node 1 serves as
the source electrode, node 2 & 4 behave as the island while node 3 again serves as the drain
electrode. The regions between the nodes are the tunnel junctions which are defined by tunnel
capacitance, C and tunnel resistance, R. Just as the bias voltage is zero the Fermi levels of both
source and drain are in equilibrium, and it remains in equilibrium till there is some exertion of the
bias voltage.
(a)
(b)
Figure 4 :( a) Equivalent circuit of SET consisting of tunnel and non-tunnel junctions with ideal
voltage sources, (b) SET with double islands [17, 19].
There will be independent tunneling of an electron through the tunnel junctions from source to
drain over the dot when an empty state is present at the energy level of the island that lies
between the Fermi levels of the electrodes.
5. Advances in Materials Science and Engineering: An International Journal (MSEJ), Vol. 3, No. 1, March 2016
25
Figure 5: Schematic band diagram of Single electron transistor [19].
The electrostatic potential of the island is transformed by the electron tunnelling. The electron
tunnelling also recasts the charge distribution in the circuit. As we modify the gate voltage
various mannerisms of the circuit also changes them being the shifting of the energy levels,
regulation on the addition and removal of electrons and turn on & off operations of the device. As
opposed to a MOSFET, the current conduction in a SET is regulated by the quantum mechanical
tunnelling of electrons through the tunnel barrier. A tunnel junction consists of two pieces of
metal supported by a very thin (about 1 nm) insulator. Tunnelling through the insulator is the sole
means for an electron to move from one metal electrode to the other [20]. Under some certain
assumptions, since only one electron can travel from one terminal to another at a time, the device
is commonly known as a SED (Single electron device). Charge transport is of discrete nature in a
SED and is continuous in case of a MOSFET.
4. COULOMB BLOCKADE
Let us try to understand this phenomenon of coulomb blockade with the help of a small example.
Let us assume a small spherical electro neutral conductor having capacitance C. The electron
addition energy (EA) is the amount of work that has to be done in order to add an extra electron to
the spherical electro neutral conductor. Therefore, EA can be written as:
EA = EC + EK ≈ EC≈ e2
/ C (1.3)
Where EC is the charging energy and EK is the quantum kinetic energy respectively. Normally
when the feature size is found to be more than 1nm; the quantum kinetic energy, EK is omitted.
Subsequently, the electrons in a single electron system require a minimum energy to tunnel
through the barrier. When the applied external biases are unable to provide this energy, an
electron cannot tunnel through. The device then goes into an OFF state. Such a condition is the
Coulomb Blockade. The minimum energy required by the electrons to tunnel through can also be
acquired from the existing thermal energy sources. Hence, to avoid the tunnelling of electron
owing to the thermionic emission, the charging energy of the island capacitance has to be
substantially higher than the existing thermal energy, KBT. This can be written as:
(e2
/C)/kBT> β (1.4)
T represents the room temperature whereas KB is the Boltzmann’s constant. The sum of all the
device capacitance gives the total capacitance of the QD. This can be written as:
CT = CG+CD+CS (1.5)
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It is also observed that the SET device operable at room temperature requires exceptionally
demanding nanofabrication technology. A simple but productive orthodox theory has played an
exclusive guiding role throughout the history of Single electronics. Kulik and Shekhter [21] had
established the theory for a particular case study which was expanded for general systems by
Averin and Likharev [22, 23]. This theory developed by Kulik and Shekhter, is based on the
following assumptions. The electron energy spectrum is continuous, within the island. This
particular assumption is valid for Ek<<kbT. Here Ek and Ecdefine the electron kinetic energy and
charging energy, respectively [24]. Analogizing with other time scales, the time taken by the
tunneling of electrons over the barrier (τt)is deemed negligible.For a SED of factual interest the
assumption that τt must be 10-15
seconds holds true. It has to be noted that coherent quantum
processes involving various concurrent tunneling events or cotunneling have been defied. This
particular assumption holds true only under the event where electrons are effectively confined in
the island.When tunnel resistances are larger than the fundamental resistance Rq, the confinement
of the electron states within the islands can be ensured. The fundamental resistance is given as
under:
R>Rq= h/e2
= 25.813Ω (1.6)
The QD (quantum dot) is connected to the source and drain electrodes through tunnel barriers.
The gate electrode steers the potential in the Quantum Dot which is also capacitively coupled to
the Quantum Dot [25].The gate voltage (Coulomb Oscillations) systematically modulates the
current through the dot. The number of electrons is fixed when the current is zero. To limit the
electrons in the Quantum Dot, the tunnel junction resistances must be greater than the quantum
resistance (25.8 kΩ).The rates of all the possible tunnel events has to be resolved in order to
mirror the tunneling of electron from island to island in a single electron circuit. The circuit’s free
energy changes as a result of a tunnel event.This change in the free energy decides the rate at
which a tunnel event would take place.The difference between the electrostatic energy stored and
the work done by the voltage sources of the circuit; denoted by U and W respectively can be
expressed as:
F=U-W (1.7)
The tunneling rate of a tunnel event can be expressed as:
Г =
∆ி
మோ(ଵି
ష
∆ಷ
ೖ)
(1.8)
∆F here represents the change in the free energy as a result of the tunnel event, the tunnel junction
resistance over which the electron is conducted is given by RT; kT is the thermal energy (k being
the Boltzmann’s constant and T is the temperature.
5. SIMON
A Monte Carlo based simulator for single electron circuits and devices is available and is named
“SIMON”. This simulator helps to report many of the design catechisms that arise. Basic features
like graphical user interface and graphical circuit editor caters for and easy and error free
handling of the simulator [26]. Circuit units like the tunnel junctions, capacitors, voltage sources
and measuring devices for voltage, current and charge can be connected subjectively and all it
requires is a mere mouse click. A few new features have been appended in the software which
are: Stability plot, normal resistors, current sources, energy dependent density of states, and
support for superconducting tunnel junctions, interactive single step mode, and Linux version
without need for third party tools. We can simulate co-tunnelling with a simple Monte Carlo
method. Most importantly, with SIMON we can confer about the crucial random problems like
7. Advances in Materials Science and Engineering: An International Journal (MSEJ), Vol. 3, No. 1, March 2016
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background charge coupled with some possible solutions. We are considering single electron
tunnel circuits which consists of islands connected randomly to tunnel junctions and capacitors
and are impelled by voltage sources. The internal resistance of the voltage source is zero and
hence it is deemed ideal. This work presents the design, simulation and analysis various digital
circuits using SET. SIMON 2.0 is used to simulate the logic operation of gates, multiplexers,
decoders, adders and converters.
5.1 Inverter
The basic building block of SET technology is the inverter that has noticeable alikeness
to standard CMOS logic. The single electron inverter is shown in Figure 6, where five
islands are hitched by four tunnel junctions.
(a)
(b) (c)
Figure 6: (a)Single electron device based Inverter (b) Input waveform of Inverter (c) Simulation results of
Inverter
5.2 Xor Gate
The XOR gate also marked as Exclusive ORgate or an inequality detector is a digital
logic gate that devices an exclusive or operation. This means that a true output follows up if one,
and only one, of the inputs to the gate are true. If either inputs are false or both are true, a false
output follows. The Single electron XOR gate is shown in Figure 7 below.
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(a)
(b) (c) (d)
Figure 7: (a) Single electron device based XOR Gate (b) Input ‘A’ of XOR Gate (c) Input ‘B’ of XOR
Gate (d)Simulation results of XOR Gate
5.3 2:1 Multiplexer
A Multiplexer is a combinational logic circuit. It can also be written as MUX or MPX. Depending
on the application of a control signal, it can be used to switch one of several input lines through to
a single common output line. The SET based 2 to 1 line multiplexer is shown in the figure below.
(a)
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(b) (c)
(d) (e)
Figure 8: (a)Single electron device based 2:1 Multiplexer (b) Input waveform ‘A0’ of 2:1 Multiplexer (c)
Input waveform ‘A1’ of 2:1 Multiplexer (d) Select Line, ‘S’ (e) Simulation results of 2:1 Multiplexer
5.4 4:1 Multiplexer
A logic circuit that picks one data line from amidst many is a multiplexer. They are often referred
to as data selectors. A 4:1 line multiplexer illustrates how it channels out information from
multiple data lines to one data line. The circuit for SET based 4:1 line multiplexer is shown in the
figure below.
(a)
(b) (c) (d)
Figure 9: (a) Single electron device based 4:1 Multiplexer(b) Select line, S0 (c) Select line, S1(d)
Simulation results of 4:1 Multiplexer.
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5.5 2:4 Decoder
A decoder is one of the multiple input
from the coded inputs.Decoding is particularly essential in applications as multiplexing, memory
address decoding.
(d)
Figure 10:(a) Single electron device based 2:4 Decoder
waveform ‘X’ (c) Input waveform ‘Y’ (d) Output waveform O0 (e) Output waveform O1 (f) Output
waveform O2 (g) Output waveform O3
Advances in Materials Science and Engineering: An International Journal (MSEJ), Vol. 3, No. 1, March
A decoder is one of the multiple input-output logic that allows us to obtain coded outputs derived
Decoding is particularly essential in applications as multiplexing, memory
(a)
(b) (c)
(e) (f)
(g)
:(a) Single electron device based 2:4 Decoder. Simulation results of 2:4 Decoder
waveform ‘X’ (c) Input waveform ‘Y’ (d) Output waveform O0 (e) Output waveform O1 (f) Output
waveform O2 (g) Output waveform O3
, March 2016
30
output logic that allows us to obtain coded outputs derived
Decoding is particularly essential in applications as multiplexing, memory
Simulation results of 2:4 Decoder:(b) Input
waveform ‘X’ (c) Input waveform ‘Y’ (d) Output waveform O0 (e) Output waveform O1 (f) Output
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5.6 Parallel Adder
Another combinational circuit is the Parallel Adder which is not clocked or doesn’t have a
memory of its own. It does not have a feedback. It adds every bit position of the operands at the
same time. Therefore, the number of bits to be added reflects the number of bit adders required.
The Parallel Adder designed using SIMON 2.0 is as follows
(b)
(e)
(h)
Figure 11: (a) Single electron device based Parallel Adder
waveform A0 (c)Input waveform B0
(g) Input waveform C1 (h) Sum Output waveform of first Full Adder, S0
second Full Adder, S1
Advances in Materials Science and Engineering: An International Journal (MSEJ), Vol. 3, No. 1, March
Another combinational circuit is the Parallel Adder which is not clocked or doesn’t have a
of its own. It does not have a feedback. It adds every bit position of the operands at the
same time. Therefore, the number of bits to be added reflects the number of bit adders required.
The Parallel Adder designed using SIMON 2.0 is as follows.
(a)
(c) (d)
(f) (g)
(i) (j)
: (a) Single electron device based Parallel Adder.Simulation results of Parallel Adder
Input waveform B0 (d) Input waveform C0 (e) Input waveform A1 (f) Input waveform B1
Sum Output waveform of first Full Adder, S0 (i) Sum Output waveform of
second Full Adder, S1 (j) Output waveform Cout of Parallel Adder
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Another combinational circuit is the Parallel Adder which is not clocked or doesn’t have a
of its own. It does not have a feedback. It adds every bit position of the operands at the
same time. Therefore, the number of bits to be added reflects the number of bit adders required.
Simulation results of Parallel Adder:(b) Input
Input waveform B1
Sum Output waveform of
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5.7 Look Ahead Carry Adder
Another type of adder used in digital logic is a look ahead carry adder also known as the fast
adder. As opposed to a slower ripple carry adder, the speed of operation is improved by
decreasing the amount of time needed to determine the ca
based look ahead carry adder is shown below.
(b) (c)
Advances in Materials Science and Engineering: An International Journal (MSEJ), Vol. 3, No. 1, March
head Carry Adder
Another type of adder used in digital logic is a look ahead carry adder also known as the fast
adder. As opposed to a slower ripple carry adder, the speed of operation is improved by
decreasing the amount of time needed to determine the carry bits. The single electron device
based look ahead carry adder is shown below.
(a)
(d)
(e) (f)
, March 2016
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Another type of adder used in digital logic is a look ahead carry adder also known as the fast
adder. As opposed to a slower ripple carry adder, the speed of operation is improved by
rry bits. The single electron device
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(g) (h) (i) (j)
Figure 12: (a) Single electron device based Look Ahead Carry Adder.Simulation results of Look Ahead
Carry Adder: (b) Input waveform A0 (c) Input waveform B0 (d) Input waveform C0 (e) Input waveform
A1 (f) Input waveform B1 (g) Output waveform S0 (h) Output waveform S1 (i) Output waveform C1(j)
Output waveformC2 of Look ahead carry adder.
5.8 Binary to Gray Code Converter
The text or data that the computers or other devices bear is staged by a binary code. The text or
data is personified as a sequence of zeroes and ones. Gray codes are essential as they find a plenty
of application in analog as well as digital converters. Two adjacent code numbers can be
distinguished from each other by just one bit. The single electron device based binary to gray
code converter is shown in the figure below.
(a)
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(b)(c)(d)(e)
(f)(g)(h)(i)
Figure 13: (a) Single electron device based Binary to Gray Code Converter. Simulation results of Binary to
Gray Code Converter :(b) Input waveform W (b) Input waveform X (c) Input waveform Y (d)Input
waveform Z (e) Output waveform A (f) Output waveform A (g) Output waveform B (h)Output waveform C
(i) Output waveform D
5.9 Gray to Binary Code Converter
This circuit performs the gray to binary code conversion and has been designed using single
electron device as shown below.
(a)
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(b) (c) (d) (e)
(f) (g) (h) (i)
Figure 14:(a)Single electron device based Gray to Binary Code Converter.Simulation results of Gray to
Binary Code Converter : (b)Input waveform W (c) Input waveform X (d) Input waveform Y (e) Input
waveform Z (f) Output waveform A (g) Output waveform B (h) Output waveform C (i) Output waveform
D.
6. CONCLUSION
In this paper, the design and simulation of novel digital circuits have been presented. The design
and simulation has been accomplished using a Monte Carlo based tool for single electron circuit
simulation named SIMON 2.0. The outputs of the digital circuits have been verified. The work
was started off with the designing of the basic logic gates and its functional attributes were
substantiated. This work can be stretched out to build bigger circuits where we can explore the
possibility of large scale integration that runs on very low power. Further this work can also be
drawn out to design subsystems. Accuracy is assured when using the Monte Carlo method but the
process experiences a setback in terms of time efficiency while simulating large circuits.SETs are
known to run on very less current and hence exhibits low power dissipation. On the other hand
CMOS functions at realistic temperatures. Therefore, SET-CMOS circuits can be fabricated with
the help of another MC based simulator called SMARTSPICE offering better accuracy.
ACKNOWLEDGEMENTS
I am using this opportunity to express my gratitude to everyone who supported me throughout the
course of this M.Tech project. I am thankful thanks to Prof.Dr. P.C Pradhan,
(Professor,Department of Electronics and Communication Engineering, SMIT, Majitar)and Mr.
Amit Agarwal(Assistant Professor, SMIT, Majitar) for their aspiring direction, invaluably
constructive criticism and friendly advice during the project work. I am sincerely grateful to them
for sharing their truthful and illuminating views on a number of issues related to the project. I
would also like to thank Prof. (Dr.) R. N. Bera (HOD, E & C Dept., SMIT),for granting me the
permission to advance with my project and work in my field of interest. I express my sincere
thanks and heartfelt gratitude to my parents for their never ending love, support and
encouragement which have enabled me to overcome all the hardships all throughout. Lastly, I
would like to thank to all my friends for assisting me and offering their selfless help during the
course of my project.
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Authors
Banani Talukdar received my B.Tech Degree in Electronics and Communication
Engineering from Don Bosco College of Engineering and Technology, Guwahati,
Assam, India. I am currently pursuing my M.Tech Degree in Digital Electronics and
Advanced Communication at Sikkim Manipal Institute of Technology, Majitar,
Sikkim, India. My interests include working in the field of Digital electronics,
nanotechnology and Single electron devices.
Dr. P.C. Pradhan received my B.E Degree in Electronics and Communication
Engineering from LD College of Engineering. I have completed my M.Tech
degree in Digital Electronics and Advanced Communication from Sikkim Manipal
Institute of Technology, Majitar, Sikkim, India. I have also obtained my Ph.D
Degree in Electron Devices from Jadavpur University, Kolkata, West Bengal,
India. I am currently working as a Professor in the Department of Electronics and
Communication Engineering at Sikkim Manipal Institute of Technology, Majitar,
Sikkim, India.
Amit Agarwal received my B.Tech Degree in Electronics and Communication
Engineering from Sikkim Manipal Institute of Technology, Majitar, Sikkim, India. I
have also received my M.Tech degree in Digital Electronics and Advanced
Communication from Sikkim Manipal Institute of Technology, Majitar, Sikkim,
India. Currently pursuing my Ph.D Degree.