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Application Report
SLOA033A - September 2000
1
Signal Conditioning Piezoelectric Sensors
James Karki Mixed Signal Products
ABSTRACT
Piezoelectric elements are used to construct transducers for a vast number of different
applications. Piezoelectric materials generate an electrical charge in response to mechanical
movement, or vice versa, produce mechanical movement in response to electrical input.
This report discusses the basic concepts of piezoelectric transducers used as sensors and
two circuits commonly used for signal conditioning their output.
Contents
1 Introduction 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2 Theory and Modeling 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3 Signal Conditioning 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.1 Voltage Mode Amplifier 3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.2 Charge Mode Amplifier 4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.3 Signal Conditioning Made Easier 4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Appendix A 5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
List of Figures
1 Sensor Models 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2 Voltage Mode Amplifier Circuit 3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3 Charge Mode Amplifier Circuit 4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1 Introduction
The word piezo comes from the Greek word piezein, meaning to press or squeeze.
Piezoelectricity refers to the generation of electricity or of electric polarity in dielectric crystals
when subjected to mechanical stress and conversely, the generation of stress in such crystals in
response to an applied voltage. In 1880, the Curie brothers found that quartz changed its
dimensions when subjected to an electrical field and generated electrical charge when pressure
was applied. Since that time, researchers have found piezoelectric properties in hundreds of
ceramic and plastic materials.
Many piezoelectric materials also show electrical effects due to temperature changes and
radiation. This report is limited to piezoelectricity. More detailed information on particular sensors
can be found by contacting the manufacturer.
2 Theory and Modeling
The basic theory behind piezoelectricity is based on the electrical dipole. At the molecular level,
the structure of a piezoelectric material is typically an ionic bonded crystal. At rest, the dipoles
formed by the positive and negative ions cancel each other due to the symmetry of the crystal
structure, and an electric field is not observed. When stressed, the crystal deforms, symmetry is
lost, and a net dipole moment is created. This dipole moment forms an electric field across the
crystal.
SLOA033A
2 Signal Conditioning Piezoelectric Sensors
In this manner, the materials generate an electrical charge that is proportional to the pressure
applied. If a reciprocating force is applied, an ac voltage is seen across the terminals of the
device. Piezoelectric sensors are not suited for static or dc applications because the electrical
charge produced decays with time due to the internal impedance of the sensor and the input
impedance of the signal conditioning circuits. However, they are well suited for dynamic or ac
applications.
A piezoelectric sensor is modeled as a charge source with a shunt capacitor and resistor, or as a
voltage source with a series capacitor and resistor. These models are shown in Figure 1 along
with a typical schematic symbol. The charge produced depends on the piezoelectric constant of
the device. The capacitance is determined by the area, the width, and the dielectric constant of
the material. As previously mentioned, the resistance accounts for the dissipation of static
charge.
+
–
Charge Model
Cp
Voltage Model Schematic Symbol
qp Rp Cp
Vq
Rp
Vp
Figure 1. Sensor Models
3 Signal Conditioning
Normal output voltages from piezoelectric sensors can vary from microvolts to hundreds of volts,
and signal conditioning circuitry requirements vary substantially. Key items to consider when
designing the amplifier are:
• Frequency of operation
• Signal amplitude
• Input impedance
• Mode of operation
The following discussion assumes that the sensor output needs a moderate amount of
amplification, and that the desired signal levels are in the 3-V to 5-V range for full scale.
Typically, the high impedance of the sensor requires an amplifier with high-input impedance.
JFET or CMOS input op amps, like the TLV2771, are natural choices.
Two circuits are used for signal conditioning. Figure 2 shows a voltage mode amplifier circuit,
and Figure 3 shows a charge mode amplifier circuit. Voltage mode amplification is used when
the amplifier is very close to the sensor. Charge mode amplification is used when the amplifier is
remote to the sensor.
SLOA033A
3Signal Conditioning Piezoelectric Sensors
3.1 Voltage Mode Amplifier
+
–
Sensor
qp
Cp
Rp
Cc
Rb
Interface Cable
Capacitance
1/2 Vcc
Rg
Cf
Rf
TLV2771
Vcc = 3V to 5V
Vo =
qp
(Cp+Cc)
x 1+
Rf
Rg
+
Vcc
2
Gain
f
L fH
1
Frequency
2π(Rp || Rb)(Cp || Cc) RfCf2π
1
= =
1+
Rf
Rg
Figure 2. Voltage Mode Amplifier Circuit
In a voltage mode amplifier, the output depends on the amount of capacitance seen by the
sensor. The capacitance associated with the interface cable will affect the output voltage. If the
cable is moved or replaced, variations in Cc can cause problems.
Resistor Rb provides a dc bias path for the amplifier input stage.
Choice of Rf and Cf sets the upper cutoff frequency.
The lower cutoff frequency is calculated by: fL + 1
2pǒRp ø RbǓǒCp ø CcǓ.
Resistor Rb should be chosen as high as possible and interface cabling reduced to a minimum.
For the TLV2771 op amp, Rb = 10 MΩ will result in a typical offset of 60 µV over the commercial
temperature range.
The biasing shown will put the output voltage at 1/2 Vcc with no input. The output will swing
above and below this dc level.
SLOA033A
4 Signal Conditioning Piezoelectric Sensors
3.2 Charge Mode Amplifier
_
+
Sensor
qp
Cp
Rp
Cc
Interface Cable
Capacitance
1/2 Vcc
Ri
TLV2771
Vcc = 3V to 5V
Vo =
qp
Cf
– +
Vcc
2
Gain
f
L fH
1
Frequency
2πRi(Cp + Cc)RfCf2π
1
= =
1
Cf
Vcc
Rf
Cf
Figure 3. Charge Mode Amplifier Circuit
The charge mode amplifier will balance the charge injected into the negative input by charging
feedback capacitor Cf. Resistor Rf bleeds the charge off capacitor Cf at a low rate to prevent the
amplifier from drifting into saturation. Resistor Rf also provides a dc bias path for the negative
input. The value of Rf and Cf set the low cutoff frequency of the amplifier.
The action of the amplifier maintains 0 V across its input terminals so that the stray capacitance
associated with interface cabling does not present a problem. Resistor Ri provides ESD
protection. Resistor Ri and capacitors Cp and Cc combine to produce roll off at higher
frequency.
The biasing shown will put the output voltage at 1/2 Vcc with no input. The output will swing
around this dc level.
3.3 Signal Conditioning Made Easier
Some manufactures have made signal conditioning of their piezoelectric sensors easier by
integrating FET buffers into the sensor. Still, proper biasing is important and additional
amplification may be desired. Refer to Application Note 3V Accelerometer Featuring TLV2772,
literature number SLVA040 (http://www.ti.com/sc/docs/apps/analog/operational_amplifiers.html)
for an example.
SLOA033A
5Signal Conditioning Piezoelectric Sensors
Appendix A Circuit Computation With q
Computation of node voltages can always be performed based on current or voltage sources
and circuit impedance. Calculating circuit voltages based on a charge source may seem difficult
at first, but it is actually simple.
Computing node voltage in a circuit with a charge source and a capacitor is a simple matter
when using the definition of capacitance, C +q
v
ǒor v + q
C
Ǔ. But what if you have resistors or
inductors?
Operational calculus in the form of the Laplace operator, s, is the cornerstone of circuit analysis.
Using the impedance form of Ohm’s Law, V = I × Z, the technique replaces circuit elements with
their s-domain impedance: C ³ 1
sC
, L → sL, and R remains R. These are based on the
relationships: v + 1
C
ŕi dt, v +L di
dt
, and v +iR. In short form: if the relationship is an
integral, divide by s, if it is a differential, multiply by s, and if it is neither, do not do anything.
Since current is the time differential of charge, i +dq
dt
ǒor ŕi dt +qǓ, substituting for i in the
standard relationships: v + q
C
, v +L
d2q
d2t
and v +R
dq
dt
. The new s-domain replacements
become: C ³ 1
C
, L → s2L, , and R → sR. In short form, multiply everything by s.
If this is too complicated, perform the circuit analysis as if the charge sources were current
sources, multiply the answer by s, and change the i to q. The result is the same. For example,
using the charge model for the piezoelectric sensor shown in Figure 1:
Substituting sRP for RP and 1
CP
for Cp, the sensor output voltage is vp +qǒ sRP
1 )sRPCP
Ǔ.
Or, assuming the charge source is a current source we find vp +iǒ RP
1 )sRPCP
Ǔ. Then
multiplying by s and substituting q for i, gives the same result.
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
Customers are responsible for their applications using TI components.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright © 2000, Texas Instruments Incorporated

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Signal conditioning piezoelectric sensors

  • 1. Application Report SLOA033A - September 2000 1 Signal Conditioning Piezoelectric Sensors James Karki Mixed Signal Products ABSTRACT Piezoelectric elements are used to construct transducers for a vast number of different applications. Piezoelectric materials generate an electrical charge in response to mechanical movement, or vice versa, produce mechanical movement in response to electrical input. This report discusses the basic concepts of piezoelectric transducers used as sensors and two circuits commonly used for signal conditioning their output. Contents 1 Introduction 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Theory and Modeling 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Signal Conditioning 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1 Voltage Mode Amplifier 3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2 Charge Mode Amplifier 4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3 Signal Conditioning Made Easier 4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Appendix A 5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . List of Figures 1 Sensor Models 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Voltage Mode Amplifier Circuit 3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Charge Mode Amplifier Circuit 4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Introduction The word piezo comes from the Greek word piezein, meaning to press or squeeze. Piezoelectricity refers to the generation of electricity or of electric polarity in dielectric crystals when subjected to mechanical stress and conversely, the generation of stress in such crystals in response to an applied voltage. In 1880, the Curie brothers found that quartz changed its dimensions when subjected to an electrical field and generated electrical charge when pressure was applied. Since that time, researchers have found piezoelectric properties in hundreds of ceramic and plastic materials. Many piezoelectric materials also show electrical effects due to temperature changes and radiation. This report is limited to piezoelectricity. More detailed information on particular sensors can be found by contacting the manufacturer. 2 Theory and Modeling The basic theory behind piezoelectricity is based on the electrical dipole. At the molecular level, the structure of a piezoelectric material is typically an ionic bonded crystal. At rest, the dipoles formed by the positive and negative ions cancel each other due to the symmetry of the crystal structure, and an electric field is not observed. When stressed, the crystal deforms, symmetry is lost, and a net dipole moment is created. This dipole moment forms an electric field across the crystal.
  • 2. SLOA033A 2 Signal Conditioning Piezoelectric Sensors In this manner, the materials generate an electrical charge that is proportional to the pressure applied. If a reciprocating force is applied, an ac voltage is seen across the terminals of the device. Piezoelectric sensors are not suited for static or dc applications because the electrical charge produced decays with time due to the internal impedance of the sensor and the input impedance of the signal conditioning circuits. However, they are well suited for dynamic or ac applications. A piezoelectric sensor is modeled as a charge source with a shunt capacitor and resistor, or as a voltage source with a series capacitor and resistor. These models are shown in Figure 1 along with a typical schematic symbol. The charge produced depends on the piezoelectric constant of the device. The capacitance is determined by the area, the width, and the dielectric constant of the material. As previously mentioned, the resistance accounts for the dissipation of static charge. + – Charge Model Cp Voltage Model Schematic Symbol qp Rp Cp Vq Rp Vp Figure 1. Sensor Models 3 Signal Conditioning Normal output voltages from piezoelectric sensors can vary from microvolts to hundreds of volts, and signal conditioning circuitry requirements vary substantially. Key items to consider when designing the amplifier are: • Frequency of operation • Signal amplitude • Input impedance • Mode of operation The following discussion assumes that the sensor output needs a moderate amount of amplification, and that the desired signal levels are in the 3-V to 5-V range for full scale. Typically, the high impedance of the sensor requires an amplifier with high-input impedance. JFET or CMOS input op amps, like the TLV2771, are natural choices. Two circuits are used for signal conditioning. Figure 2 shows a voltage mode amplifier circuit, and Figure 3 shows a charge mode amplifier circuit. Voltage mode amplification is used when the amplifier is very close to the sensor. Charge mode amplification is used when the amplifier is remote to the sensor.
  • 3. SLOA033A 3Signal Conditioning Piezoelectric Sensors 3.1 Voltage Mode Amplifier + – Sensor qp Cp Rp Cc Rb Interface Cable Capacitance 1/2 Vcc Rg Cf Rf TLV2771 Vcc = 3V to 5V Vo = qp (Cp+Cc) x 1+ Rf Rg + Vcc 2 Gain f L fH 1 Frequency 2π(Rp || Rb)(Cp || Cc) RfCf2π 1 = = 1+ Rf Rg Figure 2. Voltage Mode Amplifier Circuit In a voltage mode amplifier, the output depends on the amount of capacitance seen by the sensor. The capacitance associated with the interface cable will affect the output voltage. If the cable is moved or replaced, variations in Cc can cause problems. Resistor Rb provides a dc bias path for the amplifier input stage. Choice of Rf and Cf sets the upper cutoff frequency. The lower cutoff frequency is calculated by: fL + 1 2pǒRp ø RbǓǒCp ø CcǓ. Resistor Rb should be chosen as high as possible and interface cabling reduced to a minimum. For the TLV2771 op amp, Rb = 10 MΩ will result in a typical offset of 60 µV over the commercial temperature range. The biasing shown will put the output voltage at 1/2 Vcc with no input. The output will swing above and below this dc level.
  • 4. SLOA033A 4 Signal Conditioning Piezoelectric Sensors 3.2 Charge Mode Amplifier _ + Sensor qp Cp Rp Cc Interface Cable Capacitance 1/2 Vcc Ri TLV2771 Vcc = 3V to 5V Vo = qp Cf – + Vcc 2 Gain f L fH 1 Frequency 2πRi(Cp + Cc)RfCf2π 1 = = 1 Cf Vcc Rf Cf Figure 3. Charge Mode Amplifier Circuit The charge mode amplifier will balance the charge injected into the negative input by charging feedback capacitor Cf. Resistor Rf bleeds the charge off capacitor Cf at a low rate to prevent the amplifier from drifting into saturation. Resistor Rf also provides a dc bias path for the negative input. The value of Rf and Cf set the low cutoff frequency of the amplifier. The action of the amplifier maintains 0 V across its input terminals so that the stray capacitance associated with interface cabling does not present a problem. Resistor Ri provides ESD protection. Resistor Ri and capacitors Cp and Cc combine to produce roll off at higher frequency. The biasing shown will put the output voltage at 1/2 Vcc with no input. The output will swing around this dc level. 3.3 Signal Conditioning Made Easier Some manufactures have made signal conditioning of their piezoelectric sensors easier by integrating FET buffers into the sensor. Still, proper biasing is important and additional amplification may be desired. Refer to Application Note 3V Accelerometer Featuring TLV2772, literature number SLVA040 (http://www.ti.com/sc/docs/apps/analog/operational_amplifiers.html) for an example.
  • 5. SLOA033A 5Signal Conditioning Piezoelectric Sensors Appendix A Circuit Computation With q Computation of node voltages can always be performed based on current or voltage sources and circuit impedance. Calculating circuit voltages based on a charge source may seem difficult at first, but it is actually simple. Computing node voltage in a circuit with a charge source and a capacitor is a simple matter when using the definition of capacitance, C +q v ǒor v + q C Ǔ. But what if you have resistors or inductors? Operational calculus in the form of the Laplace operator, s, is the cornerstone of circuit analysis. Using the impedance form of Ohm’s Law, V = I × Z, the technique replaces circuit elements with their s-domain impedance: C ³ 1 sC , L → sL, and R remains R. These are based on the relationships: v + 1 C ŕi dt, v +L di dt , and v +iR. In short form: if the relationship is an integral, divide by s, if it is a differential, multiply by s, and if it is neither, do not do anything. Since current is the time differential of charge, i +dq dt ǒor ŕi dt +qǓ, substituting for i in the standard relationships: v + q C , v +L d2q d2t and v +R dq dt . The new s-domain replacements become: C ³ 1 C , L → s2L, , and R → sR. In short form, multiply everything by s. If this is too complicated, perform the circuit analysis as if the charge sources were current sources, multiply the answer by s, and change the i to q. The result is the same. For example, using the charge model for the piezoelectric sensor shown in Figure 1: Substituting sRP for RP and 1 CP for Cp, the sensor output voltage is vp +qǒ sRP 1 )sRPCP Ǔ. Or, assuming the charge source is a current source we find vp +iǒ RP 1 )sRPCP Ǔ. Then multiplying by s and substituting q for i, gives the same result.
  • 6. IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Customers are responsible for their applications using TI components. In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof. Copyright © 2000, Texas Instruments Incorporated