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Vats ppt
1. GEETA INSTITUTE OF MANAGEMENT AND
TECHNOLOGY
Presentation
On
Submitted To: Presented By :
ER. ANKUR GUPTA AMIT VATS
R. No : 3608267
Final B. Tech. (ECE)
2. What Is Spintronics ?
• In conventional electronics,
electron charge is used for
manipulation, storage, and
transfer of information .
• Spintronics uses electron
spins in addition to or in
place of the electron
charge.
3. Why We Need Spintronics !
Failure of Moore’s Law :
Moore’s Law states that the number of transistors on a
silicon chip will roughly double every eighteen months.
But now the transistors & other components have reached
nanoscale dimensions and further reducing
the size would lead to:
1. Scorching heat making making the circuit inoperable.
2. Also Quantum effects come into play at nanoscale
dimensions.
So the size of transistors & other components cannot be
reduced further.
4. Basic Principle
In Spintronics , information is carried by orientation of
spin rather than charge.
Spin can assume one of the two states relative to the magnetic
field, called spin up or spin down.
These states, spin up or spin down, can be used to represent
‘1’ and ‘0’ in binary logic.
In certain spintronic materials, spin orientation can be used
as spintronic memory as these orientation do not change
when system is switched off.
5. Advantage Spintronics
Low power consumption.
Less heat dissipation.
Spintronic memory is non-volatile.
Takes up lesser space on chip, thus more compact.
Spin manipulation is faster , so greater read & write speed.
Spintronics does not require unique and specialized semiconductors.
Common metals such as Fe, Al, Ag , etc. can be used.
6. Gaint Magnetoresistance (GMR)
The basic GMR device consists of a layer of non -magnetic metal between two
two magnetic layers.
A current consisting of spin-up and spin-down electrons is passed through
the layers.
Those oriented in the same direction as the electron spins in a magnetic layer pass
through quite easily while those oriented in the opposite direction are scattered.
7. SPIN VALVES
If the orientation of one of the magnetic layers be changed then
the device will act as a filter, or ‘spin valve’, letting through more
electrons when the spin orientations in the two layers are the same
and fewer when orientations are oppositely aligned.
The electrical resistance of the device can therefore be changed
dramatically.
8. Tunnel Magnetoresistance
Magnetic tunnel junction has two
magnetic layers separated by an insulating
metal-oxide layer.
Is similar to a GMR spin valve except that
a very thin insulator layer is sandwitched
between magnetic layers instead of metal
layer .
The difference in resistance between the
spin-aligned and nonaligned cases is much
greater than for GMR device – infact 1000
times higher than the standard spin valve.
9. Magnetoresistive Random Access Memory (MRAM)
MRAM uses magnetic storage elements.
The elements are mostly tunnel junctions formed from two
ferromagnetic plates, each of which can hold a magnetic field,
separated by a thin insulating layer.
10. SRAM VS DRAM VS MRAM
Advantage Disadvantage
SRAM • Fast read & write • Volatile
speed. • Low density
• Low power
• High density • Volatile
DRAM
• Fast read &write • High power
speed.
• Fast read &write
MRAM • None ??
speed.
• Low power
• High density
• Non Volatile
11. Comparison with DRAM & SRAM
In DRAM & SRAM, a bit is represented as charge stored in
capacitor.
In MRAM, data is stored as magnetic alignment of electrons in
a ferromagnetic material. Spin up represents ‘0’ and spin down
represents ‘1’.
MRAM promises:
• Density of DRAM
• Speed of SRAM
• Non-volatility like flash memory.
That’s why its called universal memory.
256 K MRAM
12. Journey of MRAM
Problems encountered:
1. The density of bits was low.
2. Cost of chips was high.
Improved designs to overcome these problems would work
only at liquid nitrogen temperature.
An important breakthrough was made in the year 2009.
Scientists at the North Carolina State University discovered
a semiconductor material ‘ Galium manganese nitride’ that
can store & retain spin orientation at room temperature.
And research is still going on…