This document is a bulletin from Sanken Electric Co., Ltd. that provides information on their power transistors. It includes a transistor selection guide with charts showing electrical characteristics of various transistor models. It also provides details on individual transistor part numbers, specifications, and applications. The document cautions users to verify the latest information and obtain consent for intended applications of the transistors.

1. POWER TRANSISTORS
SANKEN ELECTRIC CO.,LTD.
Bulletin No
T01EE0
( July,2001)

2. C AU T I O N / WA R N I N G
this publication
• The information in no responsibility ishas been carefully checked and is believed to be
accurate; however,
assumed for inaccuracies.
the right to make changes without further notice to any
• Sanken reserves improvements in the performance, reliability, orproducts herein in
the interest of
manufacturability
•
•
•
•
•
•
•
•
of its products. Before placing an order, Sanken advises its customers to obtain the
latest version of the relevant information to verify that the information being relied upon
is current.
Application and operation examples described in this catalog are quoted for the sole
purpose of reference for the use of the products herein and Sanken can assume no
responsibility for any infringement of industrial property rights, intellectual property
rights or any other rights of Sanken or any third party which may result from its use.
When using the products herein, the applicability and suitability of such products for the
intended purpose or object shall be reviewed at the users responsibility.
Although Sanken undertakes to enhance the quality and reliability of its products, the
occurrence of failure and defect of semiconductor products at a certain rate is inevitable.
Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death, fires
or damages to the society due to device failure or malfunction.
Sanken products listed in this catalog are designed and intended for the use as components
in general purpose electronic equipment or apparatus (home appliances, office equipment,
telecommunication equipment, measuring equipment, etc.).
Before placing an order, the user’s written consent to the specifications is requested.
When considering the use of Sanken products in the applications where higher reliability
is required (transportation equipment and its control systems, traffic signal control
systems or equipment, fire/crime alarm systems, various safety devices, etc.), please
contact your nearest Sanken sales representative to discuss and obtain written confirmation
of your specifications.
The use of Sanken products without the written consent of Sanken in the applications
where extremely high reliability is required (aerospace equipment, nuclear power control
systems, life support systems, etc.) is strictly prohibited.
Anti radioactive ray design is not considered for the products listed herein.
This publication shall not be reproduced in whole or in part without prior written approval
from Sanken.

3. Contents
Transistor Selection Guide..2
Reliability.........................6
Temperature Derating in
Safe Operating Area.........9
Accessories.....................9
Switching Characteristics
Test Circuit....................10
Symbols and Term...........10
A1186............................11
A1215............................12
A1216............................13
A1262............................14
A1294............................15
A1295............................16
A1303............................17
A1386/A ........................18
A1488/A ........................19
A1492............................20
A1493............................21
A1494............................22
A1567............................23
A1568............................24
A1667/8.........................25
A1673............................26
A1693............................27
A1694............................28
A1695............................29
A1725............................30
A1726............................31
A1746............................32
A1859/A ........................33
A1860............................34
A1907............................35
A1908............................36
A1909............................37
A2042............................38
B1257............................39
B1258............................40
B1259............................41
B1351............................42
B1352............................43
B1382............................44
B1383............................45
B1420............................46
SANKEN POWER TRANSISTORS
B1559............................47
B1560............................48
B1570............................49
B1587............................50
B1588............................51
B1647............................52
B1648............................53
B1649............................54
B1659............................55
B1685............................56
B1686............................57
B1687............................58
C2023 ...........................59
C2837 ...........................60
C2921 ...........................61
C2922 ...........................62
C3179 ...........................63
C3263 ...........................64
C3264 ...........................65
C3284 ...........................66
C3519/A ........................67
C3678 ...........................68
C3679 ...........................69
C3680 ...........................70
C3830 ...........................71
C3831 ...........................72
C3832 ...........................73
C3833 ...........................74
C3834 ...........................75
C3835 ...........................76
C3851/A ........................77
C3852/A ........................78
C3856 ...........................79
C3857 ...........................80
C3858 ...........................81
C3890 ...........................82
C3927 ...........................83
C4020 ...........................84
C4024 ...........................85
C4064 ...........................86
C4065 ...........................87
C4073 ...........................88
C4130 ...........................89
C4131 ...........................90
C4138 ...........................91
C4139 ...........................92
C4140 ...........................93
C4153 ...........................94
C4296 ...........................95
C4297 ...........................96
C4298 ...........................97
C4299 ...........................98
C4300 ...........................99
C4301 .........................100
C4304 .........................101
C4381/2 ......................102
C4388 .........................103
C4418 .........................104
C4434 .........................105
C4445 .........................106
C4466 .........................107
C5333 .........................135
C5370 .........................136
D1769 .........................137
D1785 .........................138
D1796 .........................139
D2014 .........................140
D2015 .........................141
D2016 .........................142
D2017 .........................143
D2045 .........................144
D2081 .........................145
D2082 .........................146
D2083 .........................147
D2141 .........................148
D2389 .........................149
D2390 .........................150
D2401 .........................151
C4467 .........................108
C4468 .........................109
C4495 .........................110
C4511 .........................111
C4512 .........................112
C4517/A......................113
C4518/A......................114
C4546 .........................115
C4557 .........................116
C4662 .........................117
C4706 .........................118
C4883/A......................119
C4886 .........................120
C4907 .........................121
C4908 .........................122
C5002 .........................123
C5003 .........................124
C5071 .........................125
C5099 .........................126
C5100 .........................127
C5101 .........................128
C5124 .........................129
C5130 .........................130
C5239 .........................131
C5249 .........................132
C5271 .........................133
C5287 .........................134
D2438 .........................152
D2439 .........................153
D2557 .........................154
D2558 .........................155
D2560 .........................156
D2561 .........................157
D2562 .........................158
D2589 .........................159
D2641 .........................160
D2642 .........................161
D2643 .........................162
SAH02 ........................163
SAH03 ........................164
SAP09N ......................165
SAP09P ......................166
SAP10N ......................167
SAP10P ......................168
SAP16N ......................169
SAP16P ......................170
SAP Series
Application
Information................171
Discontinued Parts
Guide ........................176
1

4. Transistor Selection Guide
s VCEO-IC
800
C3678
C4020
C4299
C4304
C4445
C4908
C5249
C4517
C4517A
C5239
600
550
C3679
C4300
C4706
C3927
C4557
C3830
C4907
400
C4073
C4418
C4662
C5130
C3831
C3832
C3890
C4130
C4546
C4138
C4296
C3833
C4297
C5071
D2017
A1668
C4382
180
D2016
A1294
C3263
A1493
C3857
A1859A
C4883A
C5271
D2557
D2558
160
150
C4140
D2141
200
A1667
A1859
C4381
C4883
B1559
B1587
D2389
D2438
140
120
D2015
D1769
D1785
D2045
110
100
80
C3852A
C3852
A1694
A1908
C4467
C5100
A1262
A1488
B1257
C3179
C3851
D1796
50
C3834
C3835
C4153
A1186
B1560
B1588
C2837
D2390
D2439
A1695
A1909
C4468
C5101
B1259
D2081
C4495
3
A2042
C4024
4
A1303
A1860
C3284
C4886
A1386A
A1492
A1673
C3519A
C3856
C4388
A1215
A1386
C2921
C3519
B1647
B1649
D2560
D2562
A1216
C2922
B1648
D2561
B1382
B1420
D2082
B1383
D2083
A1568
B1351
B1352
C4065
40
2
B1570
D2401
A1295
C3264
A1494
C3858
B1659
B1685
B1686
B1687
D2489
D2641
D2642
D2643
B1258
A1693
A1725
A1726
A1907
C4466
C4511
C4512
C5099
A1488A
C3851A
D2014
60
5
6
7
8
10
A1567
A1746
C4064
C5370
12
Collector Current IC(A)
2
C4139
C4298
C4434
C2023
C5333
250
230
Collector–Emitter Voltage VCEO(V)
C5124
C4518
C4518A
C5287
500
380
300
C3680
C4301
C5002
C5003
C4131
14
15
16
17
18
25

5. Transistor Selection Guide
s Transistors for Switch Mode Power Supplies (for AC80 – 130V input)
VCBO(V)
VCEO(V)
IC (A)
250
200
MT-25
(TO220)
5
7
500
400
C3832
12
15
400
600
500
600
C3830
FM100
(TO3PF)
C4296
C4297
C5271
C4073
C4418
C4662
C3890
C4130
10
18
5
7
6
10
3
MT–100
(TO3P)
C4138
C3833
C5071
C4139
C4434
C4140
5
FM20
(TO220F)
C4298
C5130
C4546
C4907
C3831
C5249
s Transistors for Switch Mode Power Supplies (for AC180 – 280V input)
VCBO(V)
IC (A)
550
3
5
600
900
(1000)
VCEO(V)
MT-25
(TO220)
FM20
(TO220F)
C5239
C4517(A)
C4518(A)
10
14
C4020
800
FM100
(TO3PF)
C5287
C3927
C4706
C4557
C4908
C3678
3
900
MT–100
(TO3P)
C4304
5
7
C3679
C3680
C4299
C4445
C4300
C4301
3

6. Transistor Selection Guide
Transistors for Audio Amplifiers
s Single Transistors
q Single
Emitter
Part No.
PC(W)
2SA1725/2SC4511
30
2SA1726/2SC4512
50
VCEO(V)
MT-25 (TO220)
6
MT-100 (TO3P)
75
2SA1694/2SC4467
Package
60
2SA1908/2SC5100
fT(MHz)
60
2SA1907/2SC5099
hFE(min)
FM20 (TO220F)
80
2SA1693/2SC4466
IC (A)
80
FM100 (TO3PF)
120
8
MT-100 (TO3P)
50
2SA1909/2SC5101
80
140
10
2SA1673/2SC4388
85
180
15
2SA1695/2SC4468
100
140
10
2SA1492/2SC3856
130
180
15
2SA1493/2SC3857
150
20
FM100 (TO3PF)
MT-100 (TO3P)
15
200
2SA1494/2SC3858
q LAPT
MT-200 (2-screw mount)
17
200
(Multi emitter for High Frequency)
Part No.
PC(W)
VCEO(V)
IC (A)
hFE(min)
2SA1860/2SC4886
80
2SA1186/2SC2837
100
2SA1303/2SC3284
125
2SA1386/2SC3519
130
160
2SA1386A/2SC3519A
130
180
2SA1294/2SC3263
130
230
35
2SA1215/2SC2921
150
160
50
2SA1216/2SC2922
200
180
14
10
50
q Transistors
FM100 (TO3PF)
MT-100 (TO3P)
50
40
40
17
200
Package
60
14
150
50
15
2SA1295/2SC3264
fT(MHz)
MT-200 (2-screw mount)
35
230
with built in temperature compensation diodes for audio amplifier
Part No.
VCEO(V)
IC (A)
hFE(min)
Emitter Resistor(Ω)
SAP09P/SAP09N
80
150
10
5000
0.22
SAP10P/SAP10N
100
150
12
5000
0.22
SAP16P/SAP16N
4
PC(W)
150
160
15
5000
0.22

7. Transistor Selection Guide
s Darlington Transistors
Part No.
PC(W)
2SB1686
VCEO(V)
IC (A)
hFE(min)
fT(MHz)
100
30
2SD2642
2SB1659
100
110
2SB1685
2SB1687
6
100
2SB1587
100
60
75
2SD2438
2SB1559
80
65
150
10
50
80
2SD2439
55
15
2SB1649
85
2SD2562
2SB1560
70
50
10
55
150
2SB1647
2SD2401
15
150
2SB1570
12
70
50
55
150
2SB1648
MT-200 (2-screw mount)
45
200
2SD2561
MT-100 (TO3P)
45
130
2SD2560
FM100 (TO3PF)
45
200
100
2SD2390
MT-100 (TO3P)
80
5000
2SB1588
FM100 (TO3PF)
65
8
80
2SD2389
MT-100 (TO3P)
60
60
2SD2643
MT-25 (TO220)
60
60
2SD2641
FM20 (TO220F)
60
50
2SD2589
Package
17
70
s Temperature compensation Transistors and Driver Transistors
Part No.
2SC4495
PC(W)
25
2SC4883
VCEO(V)
fT(MHz)
3
500
40
60
120
Package
Driver, Complement 2SA1859
180
2SC4883A
2SA1859
–2
–180
FM20
(TO220F)
Driver, Complement 2SA1859A
Driver, Complement 2SC4883
–150
20
Remarks
Temperature compensation
150
20
2SA1859A
hFE(min)
2
50
IC (A)
60
60
Driver, Complement 2SC4883A
5

8. Reliability
4. Applications Considered on Reliability
The word reliablity is an abstract term which refers to the degree to
which equipment or components, such as semiconductor devices, are
resistant to failure. Reliability can be and is often measured quantitatively.
Reliability is defined as “whether equipment or components (such as
a semiconductor device) under given conditions perform the same at
the end of a given period as at the beginning.”
2. Reliability Function
Collector Current Ic(A)
Failure Rate (λ)
us
SOA(Safe Operating Area)
Collector-Emitter Voltage Vce(V)
Figure 2 SOA
Initial
Failure
Random or
Chance Failure
Wear-out
Failure
Time (t)
Figure 1 Bath Tub Curve
These three types of failure describe “bathtub curve” shown in
Figure 1. Infant failures can be attributed to trouble in the production
process and can be eliminated by aging befor shipment to customers,
stricter control of the production process and quality control measures.
Semiconductor devices such as transistors, unlike electronic equipment,
take a considerable amount of time to reach the stage where wear-out
failure begins to occur. And, as shown in Figure 1 (b), they also last
much longer than electronic equipment. This shows that the longer they
are used the more stable they actually become.
The reduction that occurs in random failures can be approximated by
Weibull distribution, logarithmic normal distribution, or gamma distribution, but Weibull distribution best expresses the phenomenon that
occurs with transistors.
3. Quantitative Expression of Reliability
While there are many ways to quantitatively express reliability, two
criteria, failure rate and life span, are generally used to define the
reliability of semiconductors such as transistrors.
a) Failure Rate (FR)
Failure rate often refers to instantaneous failures or λ (t). In general
of reliability theory, however, the cumulative failure rate, or Reliability Index, is
r(t)
⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(1)
N⋅t
Where N = Net quantity used, and
r(t) = Net quantitiy failed after t hours
If we assign t the arbitrary
F⋅R=
F ⋅ R = r × 100 (%/1,000 hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(2)
N
In situations where the cumulative failure rate is small, failure is expressed in units of one Fit, 10-9 (failures/hours).
b) Life Span(L)
Life Span can be expressed in terms of average lifespan or as Mean
Time Between Failure (MTBF), but assuming that random failure
is shown by the Index Distribution [λ (t) = constant], then Life Span
or L can be shown by the equation
1
L = ⋅ (hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(3)
F R
6
Loc
Estimation
wn
Semiconductor
Devices
o
akd
Bre
ary wer
Po
bl e
wa
(b)
ond
llo
xA
General Electronic
Equipment or
Components
(a)
S ec
1. Infant failure
2. Random failure
3. Wear-out failure
Ma
In general, there are three types of failure modes in electronic components:
a) The type and specifications of our transistors and semiconductor
devices vary depending on the application that will be required by
their intended use. Customer should, therefore, determine
which type will best suit their purposes.
b) Note that high temperratures or long soldering periods must be avoided during soldering, as heat can be transmitted through external
leads into the interior. This may cause deterioration if the maximum
allowable temperature is exceeded.
c) When using the trasistor
under pulse operation or
Max.Allowable
inductive load, the Safe
Current
Operating Area (SOA) for
the current and voltage must
not be exceeded (Figure 2).
Max.
Allowable
Voltage Vceo(Max)
1. Definition of Reliability
d) The reliability of transistors and semiconductor devices is greatly
affected by the stress of junction temperature. If we accept in general
proceed in the form of Arrhenius equation, the relationship between
the junction temperature Tj and lifespan L can be expressed with
the following empirical formula
n L = A+ B ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(4)
Tj
It is, hence, very important to derate the junction temperature to
assure a high reliability rate.
5. Reliability Test
Sanken bases its test methods and conditions on the following
standards. Tests are conducted under these or stricter conditions,
The details of these are shown in Table 1.
• MIL-STD-202F (Test method for electrical and electronic components)
• MIL-STD-750C (Test method for semiconductor equipment)
• JIS C 7021 (Endurance test and environmental test method for
individual semiconductor devices)
• JIS C 7022 (Endurance test and environmental test method for
integrated circuits of semiconductors)
6. Quality Assurance
To ensure high quality and high reliability, quality control and production process control procedures are executed from the receipt of parts
through the entire production process. Our quality assurance system
is shown in Figure 3.

9. Reliability
Table 1: Test Methods and Conditions
Details of the Testing Method
LTPD(%)
Continuous Operations Test
Collector dissipation with maximum junction temperature is applied continuously at
room temperature to judge lifespan and reliability under transistor operating conditions.
*5/1000hrs
Intermittent Operation Test
Power equal to that used in the Continuous Operations Test is applied intermittently
to test the transistor’s lifespan and reliability under on and off conditions.
5/1000hrs
Test
High Temperature Storage Test
Low Temperature Storage Test
Confirms the highest storage temperature and operating temperature of transistors.
Confirms the lowest storage temperature of transistors.
5/1000hrs
5/1000hrs
Moisture Resistance Test
Tested at RH=85% and TA=85°C for the effects of the interaction between
temperature and humidity, and the effects of surface insulation between electrodes
and high temperature/high humidity.
5/1000hrs
Heat Cycle Test
Tested at Tstg min – Room temp. – Tstg max – Room temp. for 10 cycles (one cycle
30 min. –5 min. –30 min. –5 min.) to detect mechanical faults and characteristic
changes caused by thermal expansion and shrinkage of the transistor.
5
Heat Shock Test
Tested at 100°C (5 min.), 25°C (within 3 sec.), 0°C (5 min.) for 10 cycles to check for
mechanical faults and characteristic changes caused by thermal expansion and
shrinkage of transistor.
5
Soldering Heat Test
Tested at 260 ± 5°C, 10 ± 1 sec, by dipping lead wire to 1.5mm from the seating plane
in solder bath to check for characteristic changes caused by drastic temperature rises
of exterior lead wire.
5
Vibrations Test
Tested at amplitude 1.52mm, vibration frequency 10-55 Hz in directions of X, Y, Z, for
2 hours each (total 6 hours) to check for characteristic changes caused by vibration
during operation and transportion.
5
Drop Test
Tested by dropping 10 times from 75 cm height to check for mechanical endurance
and characteristic changes caused by shock during handling.
5
∗ Reliability Standard : 60%
Figure 3 Quality Assurance System
Material Purchasing
Incoming Inspection
Physical and Chemical Inspection
Production Process
Quality Control
Production Process Control
Specialized Tests for all units
Marking
Packing
Shipping Inspection
Shipment
Periodical Quality Assurance Test
1. Operational Life (continuous) Test
2. Operational Life (intermittent) Test
3. High Temperature Storage Test
4. Low Temperature Storage Test
5. Moisture Resistance Test
6. Heat Cycle Test
7. Heat Shock Test
8. Soldering Heat Test
9. Vibaration Test
10. Drop Test
7

10. Reliability
7. Notes Regarding Storage, Characteristic Tests, and Handling
Since reliability can be affected adversely by improper storage
environment and handling methods during Characteristic tests,
please observe the following cautions.
a) Cautions for Storage
1. Ensure that storage conditions comply with the standard
temperature (5 to 35°C) and the standard relative humidity
(arround 40 to 75%) and avoid storage locations that
experience extreme changes in temperature or humidity.
2. Avod locations where dust or harmful gases are present,
and avoid direct sunlight.
3. Reinspect for rust in leads and solderbility that have been
stored for a long time.
b) Cautions for Characteristic Tests and Handling
1. When characteristic tests are carried out during inspection
testing and other standard test periods, protect the transistor
from surges of power from the testing device, shorts between
the transistor and the heatsink
c) Silicone Grease
When using a heatsink, please coat the back surface of the
transistor and both surfaces of the insulating plate with a thin
layer of silicone grease to improve heat transfer between the
transistor and the heatsink.
Recommended Silicone Grease
• G-746 (Shin-Etsu Chemical)
• YG6260 (GE Toshiba Silicone)
• SC102 (Dow Corning Toray Silicone)
d) Torque when Tightening Screws
Thermal resistance increases when tightening torque is small,
and radiation effects are decreased. When the torque is too
high, the screw can cut, the heatsink can be deformed, and/or
distortion can arise in the product’s frame. To avoid these
problems, Table 2 shows the recommended tightening torques
for each product type.
Table 2. Screw Tightening Torques
Package
Screw Tightening Torque
MT25 (TO-220)
0.490 to 0.686 N · m (5 to 7kgf · cm)
FM20 (TO-220 Full Mold)
0.490 to 0.686 N · m (5 to 7kgf · cm)
MT100 (TO-3P)
0.686 to 0.822 N · m (7 to 9kgf · cm)
FM100 (TO-3P Full Mold)
0.686 to 0.822 N · m (7 to 9kgf · cm)
MT200 ( two-point mount)
0.686 to 0.822 N · m (7 to 9kgf · cm)
2GR ( one-point mount)
0.686 to 0.822 N · m (7 to 9kgf · cm)
e) Soldering Temperature
In general, the transistor is subjected to high temperatures when
it is mounted on the printed circuit board, whether from flow solder
from a solderbath, or, in hand operations from a soldering iron.
The testing method and test conditions (JIS-C-7021 standards)
for a transistor’s heat resistance during soldering are:
At a distance of 1.5mm from the transistor’s main body,
apply 260°C for 10 seconds, and 350°C for 3 seconds.
However, please stay well within these limits and for as short
a time as possible during actual soldering.
8

11. Reliability
s Temperature Derating in Safe Operating Area
Flange (case) temperature is typically described as 25°C, but it must be derated subject to the operating
temperature.
This derating curve is determined by manufacturing conditions of devices, materials used etc. and in case of a
silicon transistor, breakdown voltage and DC Current Gain are significantly deteriorated in the temperature
range of 260°C to 360°C.
Hence, the collector current must be derated by using the derating curve in Fig.2 where the breakdown point is
set at 260°C.
Pc
100
lim
re
a
B
S/
B
50
lim
itin
g
ar
ea
rea
rea
ga
ga
itin
lim
Tc=25°C
S/
itin
lim
Pc
Collector Current Ic (A)
ga
Collector Current
Derating coefficient DF (%)
itin
0
0
50
Collector-Emitter Voltage VCE (V)
100
150
200
250
300
Case Temp Tc (°C)
Fig.1 Safe Operating Area
Fig.2 Derating Curve of Safe Operating Area
Derating coefficient is obtained from temperature in Fig.2 and it must be applied to the current value of the safe
operating area in order to obtain the derated current.
s Accessories
6 Sanken Transistors do not include accessories. Accessories may be attached at a cost if requested.
6 Sanken transistor case is a standard size, and can be used with any generally sold accessories.
• Insulater: Mica, with a thickness of 0.06mm, +0.045 –0.005 allowance
Type Name:Mold(14)Mica
Type Name:Mold(9)Mica
3.1
20.0
±0.1
12.0±0.1
±0.1
10.0
+0.2
–0
7.0
14.0±0.1
2.5±0.2
5.0±0.1
19.4±0.1
6.0±0.2
3.7±0.1
2–ø3.2 +0.1
–0
ø3.2 +0.1
–0
ø3.75 +0.1
–0
24.0±0.1
Type Name:Mold(10)Mica
• Insulation Bush for MT-25 (TO220)
R0.5
7.0
±0.1
24.0
1.5±0.2
24.38±0.1
+0.2
–0
R0.5
39.0±0.1
R0.5
9

12. Switching Characteristics
s Typical Switching Characteristics (Common Emitter)
VCC
RL
IC
VB2
VBB1
(V)
(Ω)
(A)
(V)
VBB2
(V)
IB1
(V)
(A)
tr
(µs)
IB2
(A)
tstg
(µs)
tf
(µs)
sSwitching Characteristics Test Circuit/Measurement Wave Forms
20µs
IC
–VCC
R2
Base
Current 0
0
IB1
0
IB2
+VBB2
PNP
IB2
IB1
0
IC
0
Collector
Current 0.1IC
D.U.T
50µs
0.9IC
R1
ton
–VBB1
tstg tf
RL
0
GND
50µs
Base
Current 0
VCC
R1
0
IB1
IC
0
IB2
+VBB1
NPN
IB1
Collector 0.9IC
Current
0.1IC
0
IC
D.U.T
IB2
R2
0
20µs
–VBB2
GND
ton
tstg tf
RL
0
Symbols
Symbol
Item
Definition
VCBO
Collector-Base Voltage
DC Voltage between Collector and Base when Emitter is open
VCEO
Collector-Emitter Voltage
Voltage between Collector and Emitter when Base is open and voltage is reversely applied to Collector junction
VEBO
Emitter-Base Voltage
DC voltage between Emitter and Base when Collector is open
IC
Collector Current
DC current passing through Collector electrode
IB
Base Current
DC current passing through Base electrode
PC
Collector Power Dissipation
Power consumed at Collector junction
Tj
Operating Junction Temperature
Maximum allowable temperature value at absolute maximum ratings
Tstg
Storage Temperature
Maximum allowable range of ambient temperature at non-operation
ICBO
Collector Cutoff Current
Collector current when Emitter is open and a specified reverse voltage is applied between Collector and Base
IEBO
Emitter Cutoff Current
Emitter current when Collector is open and a specified reverse voltage is applied between Emitter and Base
V(BR)CEO
Collector-Emitter Saturation Voltage
Breakdown voltage between Collector and Emitter when Base is open
hFE
DC Current Gain
Ratio of DC output current and DC input current at a specified voltage and current (Emitter common)
VCE(sat)
Collector-Emitter Saturation Voltage
DC voltage between Collector and Emitter under specified saturation conditions
VBE(sat)
Base-Emitter Saturation Voltage
DC voltage between Base and Emitter under specified saturation conditions
VFEC
Emitter-Collector Diode Forward Voltage Diode forward voltage between Emitter and Collector when Base is open
fT
Cut-off Frequency
Frequency at the specified voltage and current where hFE is 1 (0dB)
Cob
Collector Junction capacitance
Junction capacitance between collector and Base at a specified voltage and frequency
• Ta=25°C unless otherwise specified.
10

13. 2SA1186
LAPT
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837)
sAbsolute maximum ratings (Ta=25°C)
sElectrical Characteristics
External Dimensions MT-100(TO3P)
(Ta=25°C)
Unit
V
ICBO
VCB=–150V
–100max
µA
V
IEBO
VEB=–5V
–100max
µA
IC=–25mA
–150min
V
VCBO
–150
VCEO
–150
–5
V
V(BR)CEO
IC
–10
A
hFE
VCE=–4V, IC=–3A
IB
–2
A
VCE(sat)
IC=–5A, IB=–0.5A
PC
100(Ta=25°C)
W
fT
Tj
150
°C
COB
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
Tstg
50min∗
ø3.2±0.1
MHz
pF
2
4.0max
60typ
110typ
20.0min
VCE=–12V, IE=1A
VCB=–80V, f=1MHz
3
1.05 +0.2
-0.1
5.45±0.1
IC
(A)
VB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
12
–5
5
–500
500
0.25typ
0.8typ
C
Weight : Approx 6.0g
a. Part No.
b. Lot No.
0.2typ
V CE ( sat ) – I B Characteristics (Typical)
0
–1
0
–2
–3
0
–4
0
–0.5
–1.0
–1.5
(V C E =–4V)
200
Transient Thermal Resistance
DC C urrent G ain h FE
125˚C
25˚C
100
Typ
50
–5
–1
–10
–30˚C
50
30
–0.02
–0.1
–0.5
f T – I E Characteristics (Typical)
p)
)
emp
eT
Cas
˚C (
–2
–1
–5
–10
3
1
0.5
0.2
1
10
Collector Current I C (A)
Collector Current I C (A)
p)
–1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
300
–0.5
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.1
0
–2.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
20
–0.02
Tem
–2
–5A
Collector-Emitter Voltage V C E (V)
100
–4
Tem
–1
–30
I B =–20m A
–2
I C =–10A
se
–40mA
se
–4
–6
C(
–60mA
–2
25˚
–8 0m A
–6
–8
(Ca
mA
–120
100mA
–
˚C
–1
125
A
Collector Current I C (A)
m
(V C E =–4V)
–10
θ j - a ( ˚ C/W)
–8
00
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
m
00
–4
–2
A
60m
I C – V BE Temperature Characteristics (Typical)
–3
Ca
I C – V CE Characteristics (Typical)
1.4
E
tf
(µs)
–60
0.65 +0.2
-0.1
5.45±0.1
B
RL
(Ω)
–10
2.0±0.1
V
VCC
(V)
Collector Current I C (A)
a
4.8±0.2
b
–2.0max
sTypical Switching Characteristics (Common Emitter)
100
1000 2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
si
nk
M aximum Power Dissip ation P C (W)
50
at
Collector-Emitter Voltage V C E (V)
–200
he
–100
ite
–10
fin
–0.2
–2
In
Emitter Current I E (A)
10
Without Heatsink
Natural Cooling
ith
–0.5
1
C
–1
20
0.1
D
W
40
–5
ms
T
yp
10
Cu t-of f Fr eque ncy f T ( MH Z )
–10
60
0
0.02
100
–30
80
Collecto r Cur rent I C (A)
DC Curr ent Gain h FE
4.0
VEBO
15.6±0.4
9.6
1.8
Ratings
5.0±0.2
Conditions
Unit
2.0
Symbol
Ratings
19.9±0.3
Symbol
Application : Audio and General Purpose
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
11

14. 2SA1215
LAPT
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921)
sElectrical Characteristics
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
–160
V
VCBO
Application : Audio and General Purpose
External Dimensions MT-200
(Ta=25°C)
Conditions
ICBO
Ratings
Unit
VCB=–160V
Symbol
–100max
µA
36.4±0.3
24.4±0.2
VEB=–5V
–100max
µA
IC=–25mA
–160min
V
VCEO
–160
V
IEBO
VEBO
–5
V
V(BR)CEO
IC
–15
A
hFE
VCE=–4V, IC=–5A
50min∗
IB
–4
A
VCE(sat)
IC=–5A, IB=–0.5A
–2.0max
V
PC
150(Tc=25°C)
W
fT
VCE=–12V, IE=2A
50typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
400typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
2-ø3.2±0.1
7
21.4±0.3
a
b
2
3
5.45±0.1
VCC
(V)
RL
(Ω)
IC
(A)
VB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
–60
12
–5
5
–500
500
0.25typ
0.85typ
B
C
E
Weight : Approx 18.4g
a. Part No.
b. Lot No.
0.2typ
V CE ( sat ) – I B Characteristics (Typical)
–1
0
–2
–3
0
–4
0
Collector-Emitter Voltage V C E (V)
–0.2
–0.4
–0.6
–0.8
(V C E =–4V)
200
Typ
50
25˚C
100
–30˚C
50
30
–0.02
–5 –10 –15
–1
Transient Thermal Resistance
DC Curr ent Gain h FE
125˚C
–0.5
Collector Current I C (A)
–0.1
–0.5
)
p)
mp)
e Te
Cas
˚C (
–2
–1
–5
–10 –15
em
2
1
0.5
0.1
1
10
Collector Current I C (A)
f T – I E Characteristics (Typical)
emp
eT
se T
Cas
–1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
200
–0.1
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
10
–0.02
0
–1.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
100
–5
–5A
θ j- a ( ˚C/W)
0
I C =–10A
–30
I B =–20mA
–1
(Ca
–50mA
–4
–10
˚C (
–10 0mA
–8
–2
25˚C
mA
–1 50 m A
125
–200
–12
(V C E =–4V)
–15
Collector Current I C (A)
A
A
A
m
A
0m 0m 0m
0m
50 –60 –50 –40
–30
–7
A
I C – V BE Temperature Characteristics (Typical)
–3
Collector-Emitter Saturation Voltage V C E (s at) (V )
–16
3.0 +0.3
-0.1
5.45±0.1
tf
(µs)
I C – V CE Characteristics (Typical)
0.65 +0.2
-0.1
1.05 +0.2
-0.1
sTypical Switching Characteristics (Common Emitter)
Collector Current I C (A)
9
4.0max
20.0min
Tstg
100
1000 2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
160
10
m
C
–5
si
nk
Without Heatsink
Natural Cooling
at
–0.5
80
he
–1
120
ite
20
D
fin
40
–10
In
Collector Curr ent I C (A)
p
ith
Ty
s
60
W
Ma xim um Powe r Dissipat io n P C (W)
–40
80
Cut- off F req uency f T ( MH Z )
DC Curr ent Gain h FE
6.0±0.2
2.1
40
Without Heatsink
0
0.02
0.1
1
Emitter Current I E (A)
12
10
–0.2
–2
–10
–100
Collector-Emitter Voltage V C E (V)
–200
5
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150

15. 2SA1216
LAPT
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922)
sElectrical Characteristics
sAbsolute maximum ratings (Ta=25°C)
Symbol
Unit
–180
V
External Dimensions MT-200
(Ta=25°C)
SymboI
Conditions
Ratings
Unit
VCBO
Ratings
VCBO
Application : Audio and General Purpose
VCB=–180V
–100max
µA
VEB=–5V
–100max
–180min
24.4±0.2
µA
IC=–25mA
2.1
V
VCEO
–180
V
IEBO
VEBO
–5
V
V(BR)CEO
IC
–17
A
hFE
VCE=–4V, IC=–8A
30min∗
IB
–5
A
VCE(sat)
IC=–8A, IB=–0.8A
–2.0max
V
PC
200(Tc=25°C)
W
fT
VCE=–12V, IE=2A
40typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
500typ
pF
–55 to +150
°C
∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)
2-ø3.2±0.1
7
21.4±0.3
a
b
2
3
5.45±0.1
RL
(Ω)
IC
(A)
VB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
4
–10
5
–1
1
0.3typ
0.7typ
C
E
Weight : Approx 18.4g
a. Part No.
b. Lot No.
tf
(µs)
–40
0.2typ
I C – V CE Characteristics (Typical)
I B =–20mA
0
0
–1
–2
–3
–4
0
–0.8
0
–1.0
0
50
–5
125˚C
100
25˚C
–30˚C
50
10
–0.02
–10 –17
–0.1
f T – I E Characteristics (Typical)
)
–2
–2.4
θ j-a – t Characteristics
–0.5 –1
–5
–10 –17
2
1
0.5
0.1
1
10
Collector Current I C (A)
Collector Current I C (A)
e T
emp
–1
Base-Emittor Voltage V B E (V)
200
DC Cur rent Gain h F E
Typ
–1
–0.6
(V C E =–4V)
300
–0.5
–0.4
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
–0.1
–0.2
Base Current I B (A)
h FE – I C Characteristics (Typical)
10
–0.02
e T
em
p)
Tem
p)
–5A
0
Collector-Emitter Voltage V C E (V)
100
–5
I C =–10A
Cas
–1
˚C(
–50mA
–30
–5
–10
Cas
–100mA
–2
ase
–150mA
˚C(
–2 00 mA
–10
–15
C(C
A
(V C E =–4V)
–17
25˚
–3 00 m
–3
125
mA
Collector Current I C (A)
0
–40
θ j - a (˚ C/W)
A
I C – V BE Temperature Characteristics (Typical)
Transient Thermal Resistance
–7
m
00
V CE ( sa t ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
–15
–5
–1.
5A
–1
A
00
m
A
–17
3.0 +0.3
-0.1
5.45±0.1
B
VCC
(V)
0.65 +0.2
-0.1
1.05 +0.2
-0.1
sTypical Switching Characteristics (Common Emitter)
Collector Current I C (A)
9
4.0max
20.0min
Tstg
100
1000
2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
200
10
m
Emitter Current I E (A)
10
–0.2
–2
–10
–100
Collector-Emitter Voltage V C E (V)
–300
nk
1
si
0.1
at
0
0.02
Without Heatsink
Natural Cooling
he
–0.5
120
ite
–1
fin
–5
160
In
20
DC
–10
ith
Collect or Cur ren t I C (A)
s
T
40
yp
W
M aximum Power Dissipa ti on P C (W)
–50
60
Cu t-off Fre quen cy f T (MH Z )
DC Curr ent Gain h F E
6.0±0.2
36.4±0.3
80
40
5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
13

16. 2SA1262
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179)
sAbsolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
sElectrical Characteristics
External Dimensions MT-25(TO220)
(Ta=25°C)
Symbol
Conditions
Ratings
Unit
V
ICBO
VCB=–60V
–100max
µA
V
IEBO
VEB=–6V
–100max
µA
–6
V
V(BR)CEO
IC=–25mA
–60min
V
–4
A
hFE
VCE=–4V, IC=–1A
40min
–60
VCEO
–60
VEBO
IC
10.2±0.2
A
VCE(sat)
IC=–2A, IB=–0.2A
–0.6max
V
30(Tc=25°C)
W
fT
VCE=–12V, IE=0.2A
15typ
150
°C
COB
VCB=–10V, f=1MHz
90typ
pF
–55 to +150
°C
Tstg
2.5
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
1.4
10
–2
–10
5
–200
200
0.25typ
0.75typ
Weight : Approx 2.6g
a. Part No.
b. Lot No.
tf
(µs)
–20
0.25typ
I B =–5mA
0
0
–1
–2
–3
–4
–5
–6
–0.5
–0.1
–0.5
0
–1
(V C E =–4V)
200
Typ
100
50
–1
25˚C
100
–30˚C
50
20
–0.02
–4
Transient Thermal Resistance
D C Cur r ent Gai n h F E
125˚C
–0.1
f T – I E Characteristics (Typical)
–1
–4
1
1
10
30
he
at
si
nk
10
ite
Without Heatsink
Natural Cooling
fin
–0.5
20
In
–1
ith
s
C
W
s
0m
Collector Cur rent I C (A)
s
m
10
D
M aximum Po wer Dissipat io n P C (W)
1m
10
–5
20
1000
P c – T a Derating
–10
30
100
Time t(ms)
Safe Operating Area (Single Pulse)
Typ
–1.5
5
0.7
(V C E =–12V)
50
–1.0
θ j-a – t Characteristics
Collector Current I C (A)
Collector Current I C (A)
40
–0.5
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
500
60
0
Base Current I B (A)
(V C E =–4V)
–0.5
)
–1A
0
–0.1
h FE – I C Characteristics (Typical)
–0.1
emp
–2A
Collector-Emitter Voltage V C E (V)
20
–0.01
eT
–1
I C =–3A
mp)
(Cas
e Tem
p)
–0.5
–2
–30˚C
–10mA
–1
–3
e Te
–20mA
–2
–1.0
Cas
–30mA
(Cas
–40m A
–3
˚C (
–50m A
(V C E =–4V)
–4
25˚C
A
125
–60m
θ j- a ( ˚ C/W)
A
–1.5
Collector Current I C (A)
Collector-Emitter Saturation Voltage V C E (s at) (V )
–8
0m
I C – V BE Temperature Characteristics (Typical)
V CE ( sat ) – I B Characteristics (Typical)
I C – V CE Characteristics (Typical)
–4
Collector Current I C (A)
2.5
B C E
VCC
(V)
Cut- off F req uency f T (M H Z )
1.35
0.65 +0.2
-0.1
sTypical Switching Characteristics (Common Emitter)
DC Curr ent Gain h F E
b
MHz
Tj
2.0±0.1
ø3.75±0.2
a
4.0max
–1
PC
12.0min
IB
4.8±0.2
3.0±0.2
VCBO
16.0±0.7
Unit
8.8±0.2
Ratings
Symbol
10
Without Heatsink
0
0.005 0.01
0.05
0.1
0.5
Emitter C urrent I E (A)
14
1
3
–0.1
–2
2
–5
–10
–50
Collector-Emitter Voltage V C E (V)
–100
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150

17. 2SA1294
LAPT
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263)
sAbsolute maximum ratings (Ta=25°C)
Ratings
VCBO
–230
VCEO
–230
sElectrical Characteristics
Unit
External Dimensions MT-100(TO3P)
(Ta=25°C)
Ratings
Unit
V
ICBO
VCB=–230V
–100max
µA
V
IEBO
VEB=–5V
–100max
µA
IC=–25mA
–230min
V
V
V(BR)CEO
–15
A
hFE
VCE=–4V, IC=–5A
50min∗
IB
–4
A
VCE(sat)
IC=–5A, IB=–0.5A
–2.0max
PC
130(Tc=25°C)
W
fT
VCE=–12V, IE=2A
35typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
500typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), Y(70 to 140)
4.8±0.2
2.0±0.1
V
Tstg
a
ø3.2±0.1
2
4.0max
20.0min
b
3
1.05 +0.2
-0.1
5.45±0.1
sTypical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
12
–5
–10
5
–500
500
0.35typ
1.50typ
C
Weight : Approx 6.0g
a. Part No.
b. Lot No.
0.30typ
I B =–20mA
0
0
–1
–2
–3
–1
–5A
0
–4
0
Collector-Emitter Voltage V C E (V)
–0.5
–1.0
–1.5
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
200
200
Typ
50
–0.5
–1
25˚C
100
–30˚C
50
10
–0.02
–5 –10 –15
Transient Thermal Resistance
DC C urrent G ain h FE
125˚C
–0.1
Collector Current I C (A)
–0.1
–0.5
–1
–5
–10 –15
0.5
0.1
10
s
he
at
si
nk
Without Heatsink
Natural Cooling
ite
–0.5
fin
–1
100
In
Collector Curr ent I C (A)
DC
ith
Ma ximum Po we r Dissipa ti on P C (W)
m
–5
50
–0.1
0.1
1
Emitter Current I E (A)
10
–0.05
–3
1000 2000
P c – T a Derating
–10
0
0.02
100
Time t(ms)
W
Cut-o ff F requ ency f T (MH Z )
1
130
10
20
mp)
1
–40
p
–2.5
3
Safe Operating Area (Single Pulse)
60
–2
θ j-a – t Characteristics
(V C E =–12V)
Ty
–1
Collector Current I C (A)
f T – I E Characteristics (Typical)
40
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
10
–0.02
0
–2.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
100
–5
I C =–10A
eTe
–50mA
Cas
–5
–10
mp
)
emp
)
–1 00 mA
–2
seT
A
mA
200
(Ca
–
0m
˚C (
–30
–10
–30
mA
(V C E =–4V)
eTe
00
–15
Cas
–5
– 3
˚C (
A
25˚C
.0
–1
125
5A
Collector Current I C (A)
.
–1
I C – V BE Temperature Characteristics (Typical)
θ j- a ( ˚ C/W)
–3
.0A
–2
.0
A
–15
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (sa t) (V )
I C – V CE Characteristics (Typical)
1.4
E
tf
(µs)
–60
0.65 +0.2
-0.1
5.45±0.1
B
VCC
(V)
Collector Current I C (A)
4.0
–5
IC
19.9±0.3
VEBO
DC C urrent G ain h FE
15.6±0.4
9.6
1.8
Conditions
5.0±0.2
Symbol
2.0
Symbol
Application : Audio and General Purpose
Without Heatsink
–10
–100
Collector-Emitter Voltage V C E (V)
–300
3.5
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
15

18. 2SA1295
LAPT
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264)
sAbsolute maximum ratings
Symbol
sElectrical Characteristics
(Ta=25°C)
External Dimensions MT-200
(Ta=25°C)
Unit
–230
Symbol
V
Conditions
Ratings
Unit
ICBO
Ratings
VCBO
Application : Audio and General
VCB=–230V
–100max
µA
36.4±0.3
24.4±0.2
VEB=–5V
–100max
µA
IC=–25mA
–230min
V
VCEO
–230
V
IEBO
VEBO
–5
V
V(BR)CEO
IC
–17
A
hFE
VCE=–4V, IC=–5A
50min∗
IB
–5
A
VCE(sat)
IC=–5A, IB=–0.5A
–2.0max
V
PC
200(Tc=25°C)
W
fT
VCE=–12V, IE=2A
35typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
500typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), Y(70 to 140)
2-ø3.2±0.1
21.4±0.3
7
9
a
b
2
4.0max
20.0min
Tstg
3
5.45±0.1
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
12
–5
–10
5
–500
500
0.35typ
1.50typ
E
Weight : Approx 18.4g
a. Part No.
b. Lot No.
0.30typ
–5
–50mA
I B =–20mA
0
0
–1
–2
–3
–1
I C =–10A
–5
–5A
0
–4
0
–0.5
Collector-Emitter Voltage V C E (V)
–1.0
–1.5
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
200
200
Typ
50
–0.5
–1
–5
25˚C
100
50
–30˚C
10
–0.02
–10 –17
Transient Thermal Resistance
DC Cur rent Gain h FE
125˚C
–0.1
0
–0.8
–0.1
–0.5
–1
–1.6
f T – I E Characteristics (Typical)
–3.2
–5
–10 –17
θ j-a – t Characteristics
2
1
0.5
0.1
1
10
Collector Current I C (A)
Collector Current I C (A)
–2.4
Base-Emittor Voltage V B E (V)
(V C E =–4V)
10
–0.02
0
–2.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
100
–10
mp)
–1 00 mA
–2
p)
mA
e Te
–200
em
0mA
–15
Cas
–30
–10
mA
–17
˚C (
0
–50
(V C E =–4V)
– 3
–30
–
A
1.0
eT
A
125
˚C (
Cas
25˚C
.5
–1
Collector Current I C (A)
–15
0A
I C – V BE Temperature Characteristics (Typical)
θ j- a ( ˚C/W)
–3
.0
.
–2
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
A
–17
Collector Current I C (A)
C
tf
(µs)
–60
3.0 +0.3
-0.1
5.45±0.1
B
VCC
(V)
I C – V CE Characteristics (Typical)
0.65 +0.2
-0.1
1.05 +0.2
-0.1
sTypical Switching Characteristics (Common Emitter)
100
1000 2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
60
200
–40
D
1
Emitter Current I E (A)
16
10
–0.05
–3
–10
–100
Collector-Emitter Voltage V C E (V)
–300
nk
0.1
si
0
0.02
at
Without Heatsink
Natural Cooling
–0.1
he
–0.5
120
ite
20
–1
fin
p
160
In
Ty
–5
ith
40
s
C
W
Collect or Cur ren t I C (A)
–10
m
M aximum Power Dissipa ti on P C (W)
10
Cu t-of f Fr eque ncy f T ( MH Z )
DC Cur rent Gain h F E
6.0±0.2
2.1
80
40
5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150

19. 2SA1303
LAPT
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284)
sElectrical Characteristics
(Ta=25°C)
External Dimensions MT-100(TO3P)
(Ta=25°C)
Ratings
Unit
V
ICBO
VCB=–150V
–100max
µA
V
IEBO
VEB=–5V
–100max
µA
IC=–25mA
–150min
V
VCBO
–150
VCEO
–150
–5
V
V(BR)CEO
IC
–14
A
hFE
VCE=–4V, IC=–5A
50min
IB
–3
A
VCE(sat)
IC=–5A, IB=–0.5A
–2.0max
50typ
MHz
VCB=–10V, f=1MHz
400typ
pF
4.8±0.2
2.0±0.1
V
VCE=–12V, IE=2A
W
Tj
150
°C
COB
–55 to +150
°C
ø3.2±0.1
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
Tstg
3
1.05 +0.2
-0.1
5.45±0.1
sTypical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
12
–5
–10
5
–500
500
0.25typ
0.85typ
C
Weight : Approx 6.0g
a. Part No.
b. Lot No.
0.2typ
0
–1
0
–2
–3
0
–4
0
–0.2
–0.4
–0.6
–0.8
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
200
200
Typ
50
–1
25˚C
100
–30˚C
50
30
–0.02
–5 –10 –14
Transient Thermal Resistance
DC Cur rent Gain h FE
125˚C
–0.5
f T – I E Characteristics (Typical)
–0.1
–0.5
emp
)
p)
Tem
p)
se
eT
Cas
˚C (
–1
–2
–1
–5
θ j-a – t Characteristics
–10 –14
3
1
0.5
0.1
1
10
Collector Current I C (A)
Collector Current I C (A)
Tem
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.1
0
–1.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
20
–0.02
(Ca
–5A
Collector-Emitter Voltage V C E (V)
100
–5
I C =–10A
–30
I B =–20mA
–1
˚C
–50mA
–4
–10
ase
–10 0mA
–8
–2
C (C
–1 50 m A
25˚
mA
125
–200
–14
Collector Current I C (A)
–12
(V C E =–4V)
–3
θ j- a ( ˚C/W)
–7
00
–6 mA
00
m
A
A
A
m
m
mA
00
00 00
–3
–5 –4
I C – V BE Temperature Characteristics (Typical)
V CE ( sa t ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
I C – V CE Characteristics (Typical)
1.4
E
tf
(µs)
–60
0.65 +0.2
-0.1
5.45±0.1
B
VCC
(V)
Collector Current I C (A)
2
4.0max
125(Tc=25°C)
fT
a
b
20.0min
PC
4.0
VEBO
100
1000 2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
–40
–10
nk
Maxim um Power Dissip ation P C (W)
si
Co lle ctor Cu rr ent I C (A)
at
Collector-Emitter Voltage V C E (V)
–200
he
–100
ite
–10
fin
–0.2
–3
In
Emitter Current I E (A)
10
Without Heatsink
Natural Cooling
ith
–1
100
W
1
s
0.1
C
–5
–0.5
0
0.02
1m
20
s
40
s
p
0m
Ty
D
m
10
60
130
10
80
Cut- off F req uency f T (MH Z )
DC Cur rent Gain h FE
15.6±0.4
9.6
1.8
Conditions
Unit
2.0
Symbol
Ratings
19.9±0.3
Symbol
5.0±0.2
sAbsolute maximum ratings
Application : Audio and General Purpose
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
17

20. 2SA1386/1386A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A)
VCBO
–180
–160
Conditions
Symbol
V
–180
–160
VCEO
Unit
V
–100max
–160
ICBO
–180
VCB=
VEBO
–5
V
IEBO
IC
–15
A
V(BR)CEO
V
µA
–100max
VEB=–5V
–180min
–160min
IC=–25mA
A
hFE
VCE=–4V, IC=–5A
W
VCE(sat)
IC=–5A, IB=–0.5A
–2.0max
2.0±0.1
ø3.2±0.1
50min∗
130(Tc=25°C)
4.8±0.2
b
V
150
Tstg
°C
fT
VCE=–12V, IE=2A
40typ
MHz
–55 to +150
Tj
°C
COB
VCB=–10V, f=1MHz
500typ
3
pF
1.05 +0.2
-0.1
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
4
–10
–10
5
–1
1
0.3typ
0.7typ
5.45±0.1
C
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I B =–20mA
–1
–2
–3
0
–4
0
–0.2
–0.4
–0.6
–0.8
h FE – I C Characteristics (Typical)
(V C E =–4V)
–5 –10 –15
Transient Thermal Resistance
DC Curr ent Gain h FE
Typ
–1
p)
125˚C
100
25˚C
–30˚C
50
20
–0.02
–0.1
–0.5
f T – I E Characteristics (Typical)
–2
–1
–5
–10 –15
3
1
0.5
0.1
1
10
Collector Current I C (A)
Collector Current I C (A)
mp)
mp)
–1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
200
–0.5
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.1
0
–1.0
Base Current I B (A)
300
10
–0.02
em
I C =–10A
–5A
Collector-Emitter Voltage V C E (V)
100
–5
e Te
–1
(Cas
–50mA
–30˚C
–5
–10
eT
–100mA
–2
(V C E =–4V)
e Te
–150mA
0
–15
Cas
–200mA
–10
0
–3
(Cas
–3 00 m A
25˚C
A
˚C (
m
125
–
0
40
Collector Current I C (A)
A
I C – V BE Temperature Characteristics (Typical)
θ j - a (˚C /W )
Collector Current I C (A)
–7
00
–5
m
00
V CE ( sa t ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
m
A
–15
1.4
E
0.2typ
I C – V CE Characteristics (Typical)
0.65 +0.2
-0.1
5.45±0.1
B
tf
(µs)
–40
DC Curr ent Gain h FE
2
4.0max
–4
PC
a
V
20.0min
IB
15.6±0.4
9.6
µA
–100max
1.8
2SA1386 2SA1386A
5.0±0.2
Symbol
External Dimensions MT-100(TO3P)
(Ta=25°C)
Ratings
Unit
2SA1386A
2SA1386
2.0
Ratings
4.0
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
Application : Audio and General Purpose
19.9±0.3
LAPT
100
1000 2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
130
–40
10
DC
0.1
1
Emitter Current I E (A)
18
10
–0.05
–3
–10
–50
–100
Collector-Emitter Voltage V C E (V)
2
–200
nk
1
0
0.02
si
–0.1
at
1.2SA1386
2.2SA1386A
he
Without Heatsink
Natural Cooling
ite
–1
–0.5
100
fin
20
–5
In
Collecto r Cur ren t I C ( A)
p
ith
Ty
W
Cut-o ff Fr eque ncy f T (MH Z )
–10
40
ms
Ma xim um Powe r Dissipation P C ( W)
60
50
3.5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150

21. 2SA1488/1488A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3851/A)
V
ICBO
VCB=
–60
VEBO
–6
V
IEBO
IC
–4
A
V(BR)CEO
IB
–1
A
hFE
PC
25(Tc=25°C)
W
VCE(sat)
Tj
150
°C
fT
–55 to +150
°C
COB
µA
V
–80
VCB=–10V, f=1MHz
Tstg
VEB=–6V
µA
–100max
IC=–25mA
–60min
–80min
VCE=–4V, IC=–1A
40min
IC=–2A, IB=–0.2A
–0.5max
V
VCE=–12V, IE=0.2A
15typ
MHz
90typ
ø3.3±0.2
a
b
V
pF
1.35±0.15
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
sTypical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–12
6
–2
–10
5
–200
200
0.25typ
0.75typ
I B =–5mA
0
0
–1
–2
–3
–4
–5
–0.5
–1
I C =–3A
–2A
–1A
0
–0.1
–6
–0.5
Collector-Emitter Voltage V C E (V)
–0.1
–0.5
0
–1
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
200
500
Typ
100
50
–1
Transient Thermal Resistance
DC Curr ent Gain h FE
125˚C
–0.5
25˚C
100
–30˚C
50
20
–0.02
–4
–0.1
f T – I E Characteristics (Typical)
–1
–4
1
1
10
30
100ms
Collect or Cur ren t I C (A)
50
10
1m
10
m
s
M aximu m Power Dissi pation P C (W)
–5
20
1000
P c – T a Derating
–10
30
100
Time t(ms)
Safe Operating Area (Single Pulse)
Typ
–1.5
5
0.7
(V C E =–12V)
40
–1.0
θ j-a – t Characteristics
Collector Current I C (A)
Collector Current I C (A)
60
–0.5
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.1
0
Base Current I B (A)
h FE – I C Characteristics (Typical)
20
–0.01
–2
eT
emp
)
e Te
mp)
(Cas
e Tem
p)
–10mA
–1
–3
–30˚C
–20mA
–2
–1.0
Cas
–30mA
(Cas
–40m A
–3
˚C (
–50m A
(V C E =–4V)
–4
–1.5
125
A
25˚C
–60m
θ j - a (˚ C/W)
A
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
Collector-Emitter Saturation Voltage V C E (sa t) (V )
Collector Current I C (A)
–8
0m
B C E
V CE ( sat ) – I B Characteristics (Typical)
–4
DC C urrent G ain h FE
Weight : Approx 2.0g
a. Part No.
b. Lot No.
0.25typ
I C – V CE Characteristics (Typical)
2.4±0.2
2.2±0.2
VCC
(V)
Cu t-off Fre quen cy f T ( MH Z )
4.0±0.2
V
–80
4.2±0.2
2.8 c0.5
0.8±0.2
–80
–60
10.1±0.2
±0.2
–60
VCEO
Unit
3.9
VCBO
Conditions
Symbol
Unit
External Dimensions FM20 (TO220F)
(Ta=25°C)
Ratings
2SA1488
2SA1488A
–100max
–100max
8.4±0.2
sElectrical Characteristics
16.9±0.3
Ratings
Symbol
2SA1488 2SA1488A
13.0min
sAbsolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
s
DC
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
W
ith
In
150x150x2
1 00x 1 0
10
0x
2
fin
ite
he
at
si
nk
50x50x2
Without Heatsink
2
0
0.005 0.01
–0.05
0.05
0.1
0.5
Emitter Current I E (A)
1
3
3
5
10
50
Collector-Emitter Voltage V C E (V)
100
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
19

22. 2SA1492
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856)
sElectrical Characteristics
(Ta=25°C)
Ratings
Unit
VCBO
–180
VCEO
–180
External Dimensions MT-100(TO3P)
(Ta=25°C)
Unit
V
ICBO
VCB=–180V
–100max
µA
V
IEBO
VEB=–6V
–100max
µA
IC=–50mA
–180min
V
VEBO
–6
V
V(BR)CEO
IC
–15
A
hFE
VCE=–4V, IC=–3A
50min∗
2.0±0.1
ø3.2±0.1
VCE(sat)
IC=–5A, IB=–0.5A
–2.0max
V
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
500typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
Tstg
3
1.05 +0.2
-0.1
5.45±0.1
sTypical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
4
–10
–10
5
–1
1
0.6typ
0.9typ
C
Weight : Approx 6.0g
a. Part No.
b. Lot No.
0.2typ
V CE ( sat ) – I B Characteristics (Typical)
I B =–20mA
0
0
–1
–2
–3
I C =–10A
–5A
0
–4
0
Collector-Emitter Voltage V C E (V)
–0.5
–1.0
–1.5
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
200
Typ
100
50
25˚C
100
–30˚C
50
20
–0.02
–5 –10 –15
–0.1
–0.5
f T – I E Characteristics (Typical)
–1
3m
10
P c – T a Derating
0m
s
s
s
C
nk
Collector-Emitter Voltage V C E (V)
–200
si
–100
at
–10
he
Without Heatsink
Natural Cooling
100
ite
Collector Cur rent I C (A)
m
–1
–0.1
–3
1000 2000
fin
10
D
–5
–0.5
100
Time t(ms)
In
10
Temp)
10
ith
20
20
1
W
–10
Typ
Emitter Current I E (A)
0.1
130
10
1
–10 –15
0.5
–40
30
0.1
–5
1
Safe Operating Area (Single Pulse)
(V C E =–12V)
–2
3
Collector Current I C (A)
Collector Current I C (A)
0
0.02
–1
θ j-a – t Characteristics
M aximum Power Dissipa ti on P C ( W)
–1
125˚C
Transient Thermal Resistance
DC Curr ent Gain h FE
300
–0.5
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.1
0
–2.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
10
–0.02
–5
(Case
–1
–30˚C
–50mA
–5
–10
mp)
Temp
)
–0 .1 A
–2
(Case
A
25˚C
– 0 .2
–10
e Te
4A
Cas
–0.
(V C E =–4V)
–15
– 3
˚C (
6A
θ j - a (˚C/W)
–1
A
–0.
125
–15
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
Collector-Emitter Saturation Voltage V C E (sa t) (V )
I C – V CE Characteristics (Typical)
1.4
E
tf
(µs)
–40
0.65 +0.2
-0.1
5.45±0.1
B
VCC
(V)
Cut- off F re quen cy f T (MH Z )
2
4.0max
A
130(Tc=25°C)
20.0min
–4
PC
Collector Current I C (A)
a
4.8±0.2
b
IB
DC Curr ent Gain h FE
15.6±0.4
9.6
1.8
Ratings
5.0±0.2
Conditions
2.0
Symbol
19.9±0.3
Symbol
4.0
sAbsolute maximum ratings
Application : Audio and General Purpose
50
3.5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150

23. 2SA1493
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857)
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
–200
sElectrical Characteristics
Unit
VCBO
Application : Audio and General Purpose
External Dimensions MT-200
(Ta=25°C)
Symbol
Conditions
Ratings
Unit
V
ICBO
VCB=–200V
–100max
µA
VEB=–6V
–100max
µA
IC=–50mA
–200min
V
V
IEBO
–6
V
V(BR)CEO
IC
–15
A
hFE
VCE=–4V, IC=–5A
50min∗
IB
–5
A
VCE(sat)
IC=–10A, IB=–1A
– 3.0max
V
VCE=–12V, IE=0.5A
20typ
MHz
VCB=–10V, f=1MHz
400typ
pF
2.1
W
Tj
150
°C
COB
–55 to +150
°C
9
a
b
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
Tstg
2
4.0max
150(Tc=25°C)
fT
20.0min
PC
2-ø3.2±0.1
7
–200
VEBO
24.4±0.2
21.4±0.3
VCEO
6.0±0.2
36.4±0.3
3
5.45±0.1
B
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
12
–5
–10
5
–500
500
0.3typ
0.9typ
E
Weight : Approx 18.4g
a. Part No.
b. Lot No.
0.2typ
0
0
–1
–2
–3
–10A
–5A
0
–4
0
Collector-Emi tter Voltage V C E (V)
200
DC C urrent G ain h FE
Typ
100
50
–1
–30˚C
50
20
–0.02
–5 –10 –15
–0.1
–0.5
–5
–10 –15
0.1
1
10
m
C
s
10
0m
s 10ms
s
2000
si
nk
–300
80
at
–100
he
–10
Collector-Emitter Voltage V C E (V)
ite
Without Heatsink
Natural Cooling
fin
–1
120
In
–5
–2
1000
P c – T a Derating
–0.1
10
100
Time t(ms)
ith
Co lle ctor Cu rr ent I C ( A)
D
–10
–0.5
emp)
0.5
W
10
(CaseT
1
160
3m
Typ
Cut- off F re quen cy f T ( MH Z )
–1
2
–50
20
20
–2
θ j-a – t Characteristics
Safe Operating Area (Single Pulse)
30
1
–1
Collector Current I C (A)
(V C E =–12V)
Emitter Current I E (A)
0
Base-Emittor Voltage V B E (V)
25˚C
100
f T – I E Characteristics (Typical)
0.1
0
–4
125˚C
Collector Current I C (A)
0
0.02
–3
(V C E =–4V)
300
–0.5
–2
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
–0.1
–1
Base Current I B (A)
h FE – I C Characteristics (Typical)
10
–0.02
–5
I C =–15A
–30˚C
–1
eTe
mp)
Temp
)
I B =–5 0m A
–5
–10
Cas
–1 00 mA
–2
(Case
A
˚C (
–200m
–10
(V C E =–4V)
125
mA
θ j- a (˚C /W )
–400
–15
25˚C
mA
Transient Thermal Resistance
–
0
60
Maximu m Power Dissip ation P C (W)
A
Collector-Emitter Saturation Voltage V C E (s at) (V )
5A
–1.
Collector Current I C (A)
–1
I C – V BE Temperature Characteristics (Typical)
–3
Collector Current I C (A)
V CE ( sa t ) – I B Characteristics (Typical)
I C – V CE Characteristics (Typical)
DC C urrent G ain h FE
C
tf
(µs)
–60
3.0 +0.3
-0.1
5.45±0.1
sTypical Switching Characteristics (Common Emitter)
–15
0.65 +0.2
-0.1
1.05 +0.2
-0.1
40
5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
21

24. 2SA1494
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858)
sElectrical Characteristics
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
–200
V
External Dimensions MT-200
(Ta=25°C)
Conditions
ICBO
Ratings
Unit
VCB=–200V
Symbol
Unit
VCBO
Application : Audio and General Purpose
–100max
µA
36.4±0.3
24.4±0.2
VEB=–6V
–100max
µA
IC=–50mA
–200min
V
VCEO
–200
V
IEBO
VEBO
–6
V
V(BR)CEO
IC
–17
A
hFE
VCE=–4V, IC=–8A
50min∗
IB
–5
A
VCE(sat)
IC=–10A, IB=–1A
–2.5max
V
PC
200(Tc=25°C)
W
fT
VCE=–12V, IE=1A
20typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
500typ
pF
–55 to +150
°C
∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180)
2-ø3.2±0.1
7
21.4±0.3
a
b
2
3
5.45±0.1
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
–40
4
–10
–10
5
–1
1
0.6typ
0.9typ
C
E
Weight : Approx 18.4g
a. Part No.
b. Lot No.
0.2typ
I B =–20mA
0
0
–1
–2
–3
–4
–10A
0
0
–1
–2
(V C E =–4V)
200
Typ
100
50
–5
25˚C
100
–30˚C
50
20
–0.02
–10 –17
–0.1
–0.5
f T – I E Characteristics (Typical)
–10 –17
3m
s
10ms
Collector-Emitter Voltage V C E (V)
–300
)
nk
–100
si
–10
at
–2
he
Without Heatsink
Natural Cooling
120
ite
–1
fin
–5
160
In
Collector Curr ent I C (A)
C
ith
D
–0.1
10
1000
W
–10
–0.5
100
s
Ma xim um Powe r Dissipat io n P C (W)
m
s
10
Emitter Current I E (A)
10
P c – T a Derating
0m
20
1
1
Time t(ms)
10
Typ
0.1
0.1
200
20
Cut- off Fr equ ency f T (MH Z )
–5
0.5
–50
30
22
–1
1
Safe Operating Area (Single Pulse)
(V C E =–12V)
–2
2
Collector Current I C (A)
Collector Current I C (A)
0
0.02
Transient Thermal Resistance
DC Curr ent Gain h FE
125˚C
–1
–1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
300
–0.5
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.1
0
–3
Base Current I B (A)
h FE – I C Characteristics (Typical)
Temp
–5A
Collector-Emitter Voltage V C E (V)
10
–0.02
–5
I C =–15A
(Case
–1
–30˚C
–50mA
–5
–10
e Te
mp)
Temp
)
–1 00 m A
–2
(Cas
A
(Case
–200m
–10
–15
125˚C
0mA
25˚C
–40
Collector Current I C (A)
0
θ j - a (˚C /W)
A
.5
–60
mA
(V C E =–4V)
–17
–3
–1A
–1
–15
I C – V BE Temperature Characteristics (Typical)
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
–17
3.0 +0.3
-0.1
5.45±0.1
B
VCC
(V)
I C – V CE Characteristics (Typical)
0.65 +0.2
-0.1
1.05 +0.2
-0.1
sTypical Switching Characteristics (Common Emitter)
Collector Current I C (A)
9
4.0max
20.0min
Tstg
DC Curr ent Gain h FE
6.0±0.2
2.1
80
40
5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150
2000

25. 2SA1567
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4064)
hFE
V
VCE=–1V, IC=–6A
50min
IC=–6A, IB=–0.3A
–0.35max
V
A
VCE(sat)
35(Tc=25°C)
W
fT
VCE=–12V, IE=0.5A
40typ
MHz
150
°C
COB
VCB=–10V, f=1MHz
330typ
pF
–55 to +150
°C
Tstg
1.35±0.15
1.35±0.15
2.54
sTypical Switching Characteristics (Common Emitter)
5
0
–5mA
0
–1
–2
–3
–4
–5
–0.5
0
–6
–10
–2
–100
–1000
(V C E =–1V)
500
125˚C
D C Cur r ent Gai n h F E
Typ
100
50
25˚C
–30˚C
100
50
30
–0.02
–10
–0.1
f T – I E Characteristics (Typical)
–1
–10
0.3
1
10
0m
s
1000
s
ite
he
150x150x2
at
si
nk
–0.1
fin
Without Heatsink
Natural Cooling
20
In
–0.5
ith
–1
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
30
W
Collector Cur rent I C (A)
s
m
DC
–5
–0.05
–3
100
P c – T a Derating
10
10
Typ
12
–1.2
Time t(ms)
Maximu m Power Dissi pation P C (W)
1m
20
–1.0
35
–10
30
–0.8
0.5
–30
40
–0.6
1
Safe Operating Area (Single Pulse)
50
Cut- off Fr equ ency f T (M H Z )
–0.4
4
(V C E =–12V)
Emitter Current I E (A)
–0.2
Collector Current I C (A)
Collector Current I C (A)
1
0
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
500
0
0.05 0.1
p)
0
–3000
Base-Emittor Voltage V B E (V)
(V C E =–1V)
–1
–4
Base Current I B (mA)
h FE – I C Characteristics (Typical)
–0.1
–6
–2
Collector-Emitter Voltage V C E (V)
30
–0.02
–8
Tem
12A
–10mA
–2
–9A
–20mA
–6A
–4
–1.0
–3A
–40mA
–10
–1A
–6
(V C E =–1V)
–12
–1.5
I C= –
–60mA
I C – V BE Temperature Characteristics (Typical)
se
–2
–10 0m A
–8
0.2typ
˚C
A
I B=
–10
Collector Current I C (A)
0m
Collector-Emitter Saturation Voltage V C E (s a t) (V )
mA
00
–15
0.4typ
V CE ( sat ) – I B Characteristics (Typical)
I C – V CE Characteristics (Typical)
–12
0.4typ
120
–120
Weight : Approx 2.0g
a. Part No.
b. Lot No.
B C E
(Ca
–10
tf
(µs)
125
–6
4
tstg
(µs)
Collector Current I C (A)
–24
ton
(µs)
IB2
(mA)
IB1
(mA)
VBB2
(V)
VBB1
(V)
θ j- a (˚ C/W)
IC
(A)
RL
(Ω)
2.4±0.2
2.2±0.2
Transient Thermal Resistance
VCC
(V)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
25˚C
Tj
3.9
–3
PC
13.0min
IB
DC Curr ent Gain h F E
ø3.3±0.2
a
b
mp)
A
e Te
–12
µA
–50min
(Cas
IC
–100max
4.0±0.2
V(BR)CEO
0.8±0.2
IEBO
V
4.2±0.2
2.8 c0.5
mp)
V
–6
10.1±0.2
–30˚C
–50
VEBO
µA
e Te
VCEO
Symbol
–100max
IC=–25mA
ICBO
(Cas
V
Conditions
VEB=–6V
–50
Unit
VCB=–50V
Unit
VCBO
Symbol
External Dimensions FM20 (TO220F)
(Ta=25°C)
Ratings
±0.2
sElectrical Characteristics
Ratings
8.4±0.2
sAbsolute maximum ratings (Ta=25°C)
Application : DC Motor Driver, Chopper Regulator and General Purpose
16.9±0.3
LOW VCE (sat)
100x100x2
10
50x50x2
Without Heatsink
–5
–10
–50
Collector-Emitter Voltage V C E (V)
–100
2
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
23

26. 2SA1568
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065)
IEBO
V
V(BR)CEO
IC
A
IB
–3
mA
V
hFE
VCE=–1V, IC=–6A
50min
A
VCE(sat)
IC=–6A, IB=–0.3A
–0.35max
IECO=–10A
–2.5max
V
V
35(Tc=25°C)
W
VFEC
Tj
150
°C
fT
VCE=–12V, IE=0.5A
40typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
330typ
pF
13.0min
1.35±0.15
1.35±0.15
2.54
sTypical Switching Characteristics (Common Emitter)
5
–1
–2
–3
–4
–5
0
–7 –10
–6
–100
Collector-Emitter Voltage V C E (V)
–1000
(V C E =–1V)
300
125˚C
D C Cur r ent Gai n h F E
100
25˚C
–30˚C
100
10
10
2
–0.02
–10
–0.1
Collector Current I C (A)
–1
–10
p)
Tem
0.3
1
10
1000
s
ite
he
150x150x2
at
si
nk
Without Heatsink
Natural Cooling
20
fin
–0.5
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
30
In
Maximu m Power Dissi pation P C (W)
0m
–1
–0.05
–3
100
ith
24
0.5
W
Collector Cur rent I C (A)
DC
s
–5
s
–0.1
10
–1.2
P c – T a Derating
m
20
–1.0
Time t(ms)
10
10
Typ
30
–0.8
35
1m
40
–0.6
1
Safe Operating Area (Single Pulse)
–10
Emitter Current I E (A)
–0.4
4
–30
1
–0.2
θ j-a – t Characteristics
(V C E =–12V)
50
0
Collector Current I C (A)
f T – I E Characteristics (Typical)
Cut- off Fr equ ency f T (M H Z )
DC Curr ent Gain h F E
Typ
0
0.05 0.1
0
–3000
h FE – I C Temperature Characteristics (Typical)
300
–1
–4
Base-Emittor Voltage V B E (V)
(V C E =–1V)
–0.1
–6
Base Current I B (mA)
h FE – I C Characteristics (Typical)
2
–0.02
–8
–2
Transient Thermal Resistance
Collector Current I C (A)
I B=
0
A
0
–0.5
–9A
–10mA
–2
–3 A
–20mA
–1.0
–1A
–4
–10
–6A
–40mA
(V C E =–1V)
–12
–1.4
–12
–60mA
I C – V BE Temperature Characteristics (Typical)
I C=
–8
–6
0.2typ
˚C
–1 00 mA
–2
–10
Collector-Emitter Saturation Voltage V C E (s a t) (V )
0mA
00
mA
–15
0.4typ
V CE ( sat ) – I B Characteristics (Typical)
I C – V CE Characteristics (Typical)
–12
0.4typ
120
–120
se
–10
B C E
(Ca
–6
4
Weight : Approx 2.0g
a. Part No.
b. Lot No.
tf
(µs)
tstg
(µs)
125
–24
ton
(µs)
IB2
(mA)
IB1
(mA)
VBB2
(V)
VBB1
(V)
Collector Current I C (A)
IC
(A)
RL
(Ω)
2.4±0.2
2.2±0.2
θ j - a (˚C /W)
VCC
(V)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
25˚C
Tstg
3.9
PC
ø3.3±0.2
a
b
0.8±0.2
–60min
8.4±0.2
–60max
16.9±0.3
VEB=–6V
IC=–25mA
4.2±0.2
2.8 c0.5
mp)
V
–6
–
+12
10.1±0.2
e Te
–60
VEBO
µA
(Cas
VCEO
–100max
4.0±0.2
ICBO
mp)
V
Unit
–30˚C
–60
Ratings
VCB=–60V
VCBO
External Dimensions FM20 (TO220F)
(Ta=25°C)
Conditions
±0.2
Symbol
Unit
C
Application : DC Motor Driver, Chopper Regulator and General Purpose
sElectrical Characteristics
Ratings
Symbol
Equivalent
curcuit
e Te
sAbsolute maximum ratings (Ta=25°C)
B
(Cas
Built-in Diode at C–E
Low VCE (sat)
E
( 250 Ω )
100x100x2
10
50x50x2
Without Heatsink
–5
–10
–50
Collector-Emitter Voltage V C E (V)
–100
2
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150

27. 2SA1667/1668
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382)
–200
VCB=
VEBO
–6
V
IEBO
IC
–2
A
V(BR)CEO
µA
–150
ICBO
V
–10max
–200
10.1±0.2
V
µA
–10max
VEB=–6V
–150min
IC=–25mA
–200min
hFE
VCE=–10V, IC=–0.7A
60min
W
VCE(sat)
IC=–0.7A, IB=–0.07A
–1.0max
V
Tj
150
°C
fT
VCE=–12V, IE=0.2A
20typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
60typ
pF
Tstg
3.9
A
25(Tc=25°C)
13.0min
–1
PC
ø3.3±0.2
a
b
V
IB
4.2±0.2
2.8 c0.5
4.0±0.2
V
Unit
–10max
Conditions
Symbol
External Dimensions FM20 (TO220F)
0.8±0.2
–150
Unit
(Ta=25°C)
Ratings
2SA1667
2SA1668
±0.2
VCEO
sElectrical Characteristics
8.4±0.2
Ratings
Symbol
2SA1667 2SA1668
VCBO
–150
–200
16.9±0.3
sAbsolute maximum ratings (Ta=25°C)
Application : TV Vertical Output, Audio Output Driver and General Purpose
1.35±0.15
1.35±0.15
sTypical Switching Characteristics (Common Emitter)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
2.4±0.2
2.2±0.2
–100
–0.4
0
–2
–4
–6
–8
–1
–10
–100
(V C E =–10V)
400
100
–0.1
–1
Transient Thermal Resistance
D C Cur r ent Gai n h F E
Typ
25˚C
–30˚C
100
30
–0.01
–2
Collector Current I C (A)
–0.1
–1
–2
0.5
1
2
Temp)
at
0x
he
si
nk
–100
1 00x 1 0
10
ite
–10
Collector-Emitter Voltage V C E (V)
150x150x2
fin
1
In
Without Heatsink
Natural Cooling
1.2SA1667
2.2SA1668
20
ith
M aximu m Power Dissipat io n P C (W)
C
W
Collector Curr ent I C (A)
s
2
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
s
ms
1
–0.01
–1
1000
P c – T a Derating
–0.1
10
–1.2
100
1m
20
5m
D
–1
20
)
10
25
40
–1.0
Time t(ms)
–5
30
–0.8
1
Safe Operating Area (Single Pulse)
Typ
–0.6
5
(V C E =–12V)
0.1
–0.4
Collector Current I C (A)
f T – I E Characteristics (Typical)
Cut- off Fr equ ency f T (M H Z )
D C Cur r ent Gai n h F E
125˚C
Emitter Current I E (A)
–0.2
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
400
50
0
Base-Emittor Voltage V B E (V)
(V C E =–10V)
0
0.01
0
–1000
Base Current I B (mA)
h FE – I C Characteristics (Typical)
40
–0.01
–0.8
–0.4
I C =–2A
–2
–1.2
–1A
–0 .5A
Collector-Emitter Voltage V C E (V)
–1.6
(Case
–2
0
–10
–2
–30˚C
I B =–5mA/Step
(V C E =–10V)
–3
Temp
–1.2
I C – V BE Temperature Characteristics (Typical)
mp)
Collector Current I C (A)
–1.6
0
0.5typ
(Case
A
–0.8
1.5typ
B C E
e Te
Collector-Emitter Saturation Voltage V C E (s at) (V )
–2.0
–5
0.4typ
Weight : Approx 2.0g
a. Part No.
b. Lot No.
tf
(µs)
V CE ( sa t ) – I B Characteristics (Typical)
I C – V CE Characteristics (Typical)
0m
100
tstg
(µs)
(Cas
5
–10
ton
(µs)
IB2
(mA)
25˚C
–1
20
IB1
(mA)
125˚C
–20
VBB2
(V)
VBB1
(V)
Collector Current I C (A)
IC
(A)
RL
(Ω)
θ j- a (˚C /W )
VCC
(V)
50x50x2
Without Heatsink
2
2
–300
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
25

28. 2SA1673
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4388)
Ratings
VCBO
–180
V
VCEO
–180
sElectrical Characteristics
Unit
External Dimensions FM100(TO3PF)
(Ta=25°C)
Unit
VCB=–180V
–10max
µA
V
IEBO
VEB=–6V
–10max
µA
VEBO
–6
V
V(BR)CEO
IC
–15
A
hFE
–180min
IC=–50mA
VCE=–4V, IC=–3A
15.6±0.2
V
50min∗
VCE(sat)
IC=–5A, IB=–0.5A
–2.0max
V
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
150
°C
COB
VCB=–10V, f=1MHz
500typ
pF
–55 to +150
°C
Tj
Tstg
3.0
A
85(Tc=25°C)
3.3
–4
PC
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
5.45±0.1
1.5
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
–40
4
–10
–10
5
–1
1
0.6typ
0.9typ
0.2typ
4.4
0
0
–1
–2
–3
0
–4
0
–0.5
–1.0
–1.5
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
200
Typ
100
50
125˚C
25˚C
100
–30˚C
50
20
–0.02
–5 –10 –15
f T – I E Characteristics (Typical)
–0.1
–0.5
–1
–5
–10 –15
1
m
0m
s
s
s
C
nk
Collector-Emitter Voltage V C E (V)
–200
si
–100
at
–10
he
Without Heatsink
Natural Cooling
60
ite
–1
80
fin
–2
–0.1
–3
1000 2000
P c – T a Derating
–0.2
10
p)
100
Time t(ms)
In
Collecto r Cur rent I C (A)
D
–5
–0.5
ase Tem
10
ith
10
26
0.1
W
20
Emitter Current I E (A)
0.5
M aximu m Power Dissip ation P C (W)
10
10
–10
Typ
1
1
100
3m
0.1
3
–40
30
–2
θ j-a – t Characteristics
Safe Operating Area (Single Pulse)
(V C E =–12V)
0
0.02
–1
Collector Current I C (A)
Collector Current I C (A)
Cut- off F req uency f T (MH Z )
Transient Thermal Resistance
DC Cur rent Gain h FE
300
–1
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.5
0
–2.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
–0.1
mp)
Temp
)
I C =–10A
–5A
Collector-Emitter Voltage V C E (V)
10
–0.02
–5
–30˚C (C
I B =–20mA
–1
(Case
–50mA
–5
–10
25˚C
–0 .1 A
–2
e Te
A
Cas
– 0 .2
–10
(V C E =–4V)
˚C (
A
–15
125
–0.4
E
– 3
Collector Current I C (A)
6A
C
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I C – V BE Temperature Characteristics (Typical)
θ j - a (˚ C/W)
–0.
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
3.35
V CE ( sat ) – I B Characteristics (Typical)
–15
–1
B
0.65 +0.2
-0.1
1.5
tf
(µs)
I C – V CE Characteristics (Typical)
0.8
2.15
1.05 +0.2
-0.1
VCC
(V)
Collector Current I C (A)
1.75
5.45±0.1
sTypical Switching Characteristics (Common Emitter)
DC Cur rent Gain h F E
3.45 ±0.2
ø3.3±0.2
a
b
16.2
IB
5.5±0.2
5.5
ICBO
1.6
Ratings
9.5±0.2
Conditions
Symbol
23.0±0.3
Symbol
0.8±0.2
sAbsolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
40
20
3.5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150

29. 2SA1693
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466)
sAbsolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
sElectrical Characteristics
External Dimensions MT-100(TO3P)
(Ta=25°C)
Unit
VCB=–80V
–10max
µA
V
IEBO
VEB=–6V
–10max
µA
V
V(BR)CEO
IC=–50mA
–80min
V
–6
A
hFE
VCEO
–80
VEBO
IC
50min∗
VCE=–4V, IC=–2A
a
VCE(sat)
IC=–2A, IB=–0.2A
–1.5max
V
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
150typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
2
3
1.05 +0.2
-0.1
sTypical Switching Characteristics (Common Emitter)
5.45±0.1
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
10
–3
–10
5
–0.3
0.3
0.18typ
1.10typ
C
0.21typ
0
0
–1
–2
–3
–4
–4A
–2A
0
0
–0.5
Collector-Emitter Voltage V C E (V)
–1.0
(V C E =–4V)
300
100
50
125˚C
Transient Thermal Resistance
DC Cur rent Gain h FE
Typ
–1
25˚C
–30˚C
100
50
30
–0.02
–5 –6
–0.1
Collector Current I C (A)
–0.5
–2
–1
–5 –6
5
1
0.5
0.3
1
10
Collector Current I C (A)
f T – I E Characteristics (Typical)
)
–1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
300
–0.5
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.1
0
–1.5
Base Current I B (A)
h FE – I C Characteristics (Typical)
30
–0.02
–2
I C =–6A
Temp
–1
(Case
I B =–10mA
–30˚C
–20mA
–2
–4
e Te
mp)
e Te
mp)
–30mA
–2
(Cas
–50mA
25˚C
–4
Cas
–8 0m A
˚C (
–1
00 m A
(V C E =–4V)
–6
–3
mA
125
–
0
15
Collector Current I C (A)
0
A
I C – V BE Temperature Characteristics (Typical)
θ j- a ( ˚ C/W)
Collector Current I C (A)
–2
0m
Weight : Approx 6.0g
a. Part No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
–6
1.4
E
tf
(µs)
–30
0.65 +0.2
-0.1
5.45±0.1
B
VCC
(V)
I C – V CE Characteristics (Typical)
2.0±0.1
ø3.2±0.1
4.0max
A
60(Tc=25°C)
20.0min
–3
PC
Tstg
4.8±0.2
b
IB
100
1000 2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
60
10
–10
Typ
ite
he
at
si
nk
Collector Curr ent I C (A)
fin
Without Heatsink
Natural Cooling
40
In
–1
–0.5
ith
DC
W
10
s
100ms
–5
20
m
M aximum Power Dissipa ti on P C ( W)
–20
30
Cut -off Fre quen cy f T (M H Z )
DC Curr ent Gain h FE
15.6±0.4
9.6
4.0
V
19.9±0.3
–80
1.8
ICBO
VCBO
Symbol
Unit
5.0±0.2
Ratings
Ratings
2.0
Conditions
–6
Symbol
20
Without Heatsink
0
0.02
0.05 0.1
0.5
1
Emitter Current I E (A)
5 6
–0.1
–5
–10
–50
Collector-Emitter Voltage V C E (V)
–100
3.5
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
27

30. 2SA1694
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467)
Application : Audio and General Purpose
sElectrical Characteristics
sAbsolute maximum ratings (Ta=25°C)
External Dimensions MT-100(TO3P)
(Ta=25°C)
Unit
–10max
µA
V
IEBO
VEB=–6V
–10max
µA
–6
V
V(BR)CEO
–8
A
hFE
VCEO
–120
VEBO
IC
–120min
IC=–50mA
V
19.9±0.3
V
50min∗
VCE=–4V, IC=–3A
a
VCE(sat)
IC=–3A, IB=–0.3A
–1.5max
V
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
300typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
2
3
1.05 +0.2
-0.1
5.45±0.1
sTypical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
10
–4
–10
5
–0.4
0.4
0.14typ
1.40typ
C
Weight : Approx 6.0g
a. Part No.
b. Lot No.
0.21typ
V CE ( s a t ) – I B Characteristics (Typical)
0
–1
–2
–3
–4
–4A
0
(V C E =–4V)
300
100
50
–1
–5
125˚C
Transient Thermal Resistance
DC Curr ent Gain h FE
Typ
25˚C
100
–30˚C
50
30
–0.02
–8
mp)
e Te
–0.5
–0.1
–0.5
f T – I E Characteristics (Typical)
–1.5
–1
–5 –8
3
1
0.5
0.3
1
10
100
1000
Time t(ms)
Collector Current I C (A)
Collector Current I C (A)
–1.0
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
200
–0.5
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.1
0
–0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
mp)
–2A
0
Collector-Emitter Voltage V C E (V)
30
–0.02
mp)
–2
I C =–8A
(Cas
I B =–10mA
–1
–30˚C
–2
–4
e Te
–25mA
–6
e Te
–50mA
–4
–2
(Cas
–7 5m A
Cas
mA
˚C (
–100
125
5
(V CE =–4V)
–8
Collector Current I C (A)
–1
A
0m
θ j - a ( ˚ C/W)
0
A
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
m
50
Collector Current I C (A)
–3
–2
0m
–6
0
I C – V BE Temperature Characteristics (Typical)
–3
25˚C
I C – V CE Characteristics (Typical)
1.4
E
tf
(µs)
–40
0.65 +0.2
-0.1
5.45±0.1
B
VCC
(V)
–8
2.0±0.1
ø3.2±0.1
4.0max
A
80(Tc=25°C)
20.0min
–3
PC
Tstg
4.8±0.2
b
IB
D C Cur r ent Gai n h F E
15.6±0.4
9.6
1.8
VCB=–120V
–120
5.0±0.2
ICBO
VCBO
Symbol
2.0
Ratings
Unit
4.0
Conditions
Ratings
Symbol
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
80
–20
10
si
nk
Co lle ctor Cu rren t I C (A)
40
at
Without Heatsink
Natural Cooling
he
–0.5
ite
–1
60
fin
Cut- off F req uency f T (MH Z )
DC
In
10
s
ith
–5
Typ
20
100ms
W
–10
m
Maxim um Power Dissip ation P C (W)
30
20
Without Heatsink
0
0.02
0.05 0.1
0.5
1
Emitter Current I E (A)
28
5
8
–0.1
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
3.5
0
0
25
50
75
100
12 5
Ambient Temperature Ta(˚C)
150

31. 2SA1695
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468)
sAbsolute maximum ratings (Ta=25°C)
sElectrical Characteristics
External Dimensions MT-100(TO3P)
(Ta=25°C)
Unit
VCB=–140V
–10max
µA
V
IEBO
VEB=–6V
–10max
µA
V
VCEO
–140
VEBO
–6
V
V(BR)CEO
IC
–10
A
hFE
–140min
IC=–50mA
V
50min∗
VCE=–4V, IC=–3A
15.6±0.4
9.6
4.0
–140
a
VCE(sat)
IC=–5A, IB=–0.5A
–0.5max
V
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
400typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
2
3
1.05 +0.2
-0.1
sTypical Switching Characteristics (Common Emitter)
5.45±0.1
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
12
–5
–10
5
–0.5
0.5
0.17typ
1.86typ
C
0.27typ
I C – V BE Temperature Characteristics (Typical)
–3
–10
–2
I B =–10mA
–1
0
–2
–3
–4
–2
I C =–10A
–5A
0
0
–0.5
Collector-Emitter Voltage V C E (V)
–1.0
–1.5
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
200
200
Typ
100
50
–1
–5
Transient Thermal Resistance
DC Curr ent Gain h F E
125˚C
–0.5
25˚C
100
–30˚C
50
30
–0.02
–10
–0.1
–0.5
–1
f T – I E Characteristics (Typical)
–1.5
–1
–5
–10
θ j-a – t Characteristics
3
1
0.5
0.1
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
Collector Current I C (A)
)
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.1
0
–2.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
30
–0.02
–4
Temp
–1
(Case
–25mA
–6
–30˚C
–50mA
–4
–2
p)
–7 5m A
–6
–8
mp)
mA
Tem
–100
se
–8
e Te
A
(Ca
0m
(Cas
–15
˚C
0
25˚C
–2
(V C E =–4V)
125
0
A
0m
Collector Current I C (A)
–3
A
0m
θ j- a ( ˚C/W)
00
mA
Collector-Emitter Saturation Voltage V C E (s at) (V )
–4
Collector Current I C (A)
Weight : Approx 6.0g
a. Part No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
–10
0
1.4
E
tf
(µs)
–60
0.65 +0.2
-0.1
5.45±0.1
B
I C – V CE Characteristics (Typical)
2.0±0.1
ø3.2±0.1
4.0max
A
100(Tc=25°C)
20.0min
–4
PC
Tstg
4.8±0.2
b
IB
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
100
–0.1
–3
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
nk
Emitter Current I E (A)
10
si
1
50
at
0.1
he
0
0.02
ite
ms
Without Heatsink
Natural Cooling
fin
10
–0.5
In
s
–1
ith
3m
s
10
DC
–5
0m
Typ
10
20
Co lle ctor Cu rren t I C ( A)
–10
W
Maximu m Power Diss ip ation P C (W)
–30
30
Cut-o ff F requ ency f T (MH Z )
DC Curr ent Gain h F E
1.8
ICBO
VCBO
Symbol
5.0±0.2
Ratings
Unit
2.0
Conditions
Ratings
19.9±0.3
Symbol
Application : Audio and General Purpose
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
29

32. 2SA1725
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511)
sElectrical Characteristics
V(BR)CEO
IC
–6
A
VEB=–6V
hFE
–10max
µA
IC=–25mA
IEBO
V
–80min
V
10.1±0.2
50min∗
VCE=–4V, IC=–2A
A
VCE(sat)
IC=–2A, IB=–0.2A
–0.5max
V
30(Tc=25°C)
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
150
°C
COB
VCB=–10V, f=1MHz
150typ
pF
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
Tj
Tstg
–55 to +150
3.9
–3
PC
ø3.3±0.2
a
b
13.0min
IB
1.35±0.15
1.35±0.15
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
–30
10
–3
–10
5
–0.3
0.3
0.18typ
1.10typ
0.21typ
–1
0
–1
0
–2
–3
0
–0.5
–1.0
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
300
100
50
125˚C
Transient Thermal Resistance
DC C urrent G ain h FE
Typ
–1
p)
–0.5
0
25˚C
–30˚C
100
50
30
–0.02
–5 –6
–0.1
Collector Current I C (A)
–1.5
–0.5
–1
θ j-a – t Characteristics
5
1
0.5
0.4
1
–5 –6
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
–1
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.5
0
–1.5
Base Current I B (A)
300
)
–2A
0
–4
h FE – I C Characteristics (Typical)
–0.1
Tem
I C =–6A
–4A
Collector-Emitter Voltage V C E (V)
30
–0.02
–2
emp
–1
–30˚C
I B =–10mA
se
–20mA
–2
se T
–30mA
–4
(Ca
–3
–2
(Ca
–50mA
˚C
Collector Current I C (A)
–4
25˚C
A
–8 0m A
125
–1 00 m
–5
(V CE =–4V)
–6
–3
Collector Current I C (A)
mA
I C – V BE Temperature Characteristics (Typical)
θ j- a ( ˚C/W)
–
0
15
Collector-Emitter Saturation Voltage V C E (s at) (V )
–2
A
Weight : Approx 2.0g
a. Part No.
b. Lot No.
B C E
V CE ( s a t ) – I B Characteristics (Typical)
I C – V CE Characteristics (Typical)
m
00
2.4±0.2
2.2±0.2
VCC
(V)
D C Cur r ent Gai n h F E
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
sTypical Switching Characteristics (Common Emitter)
–6
4.2±0.2
2.8 c0.5
mp)
V
–6
µA
e Te
–80
VEBO
–10max
4.0±0.2
VCEO
VCB=–80V
ICBO
0.8±0.2
V
Unit
±0.2
–80
Ratings
(Cas
Unit
VCBO
External Dimensions FM20(TO220F)
(Ta=25°C)
Conditions
8.4±0.2
Symbol
Ratings
16.9±0.3
sAbsolute maximum ratings (Ta=25°C)
Symbol
Application : Audio and General Purpose
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
30
–10
10
100ms
si
nk
–0.1
at
Without Heatsink
Natural Cooling
he
–0.5
ite
–1
20
fin
10
s
DC
In
20
m
ith
Collecto r Cur ren t I C (A)
–5
W
Cut -off Fre quen cy f T ( MH Z )
Typ
M aximum Po wer Dissipat io n P C (W)
–20
30
10
Without Heatsink
2
0
0.02
0.05 0.1
0.5
1
Emitter Current I E (A)
30
5 6
–0.05
–3
–5
–10
–50
Collector-Emitter Voltage V C E (V)
–100
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150

33. 2SA1726
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512)
sAbsolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
sElectrical Characteristics
Symbol
External Dimensions MT-25(TO220)
(Ta=25°C)
Unit
VCB=–80V
–10max
µA
V
IEBO
VEB=–6V
–10max
µA
–6
V
V(BR)CEO
IC=–25mA
–80min
V
–6
A
hFE
–80
VEBO
IC
50min∗
VCE=–4V, IC=–2A
A
VCE(sat)
IC=–2A, IB=–0.2A
–0.5max
V
50(Tc=25°C)
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
150typ
pF
–55 to +150
°C
b
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
Tstg
2.5
2.5
1.4
B C E
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
10
–3
–10
5
–0.3
0.3
0.18typ
1.10typ
Weight : Approx 2.6g
a. Part No.
b. Lot No.
tf
(µs)
–30
0.21typ
0
0
–1
–2
–3
–4
0
–0.5
–1.0
(V C E =–4V)
50
–5 –6
125˚C
Transient Thermal Resistance
DC Cur rent Gain h FE
100
25˚C
–30˚C
100
50
30
–0.02
–0.1
Collector Current I C (A)
–0.5
–1.5
–1
–5 –6
p)
5
1
0.5
0.4
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
–1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
Typ
–1
–0.5
0
Base-Emittor Voltage V B E (V)
300
–0.5
0
–1.5
(V C E =–4V)
300
)
–2A
0
Base Current I B (A)
h FE – I C Characteristics (Typical)
–0.1
Tem
I C =–6A
–4A
Collector-Emitter Voltage V C E (V)
30
–0.02
–2
emp
–1
–30˚C
I B =–10mA
se
–20mA
–2
–4
se T
–30mA
–2
(Ca
–50mA
(Ca
–4
˚C
A
–8 0m A
125
–1 00 m
(V CE =–4V)
–6
–3
A
Collector Current I C (A)
–1
m
50
I C – V BE Temperature Characteristics (Typical)
θ j- a ( ˚ C/ W)
0
A
Collector-Emitter Saturation Voltage V C E (s at) (V)
Collector Current I C (A)
–2
0m
V CE ( sa t ) – I B Characteristics (Typical)
25˚C
I C – V CE Characteristics (Typical)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
50
–10
10
100ms
Typ
0.5
1
Emitter Current I E (A)
5 6
–0.05
–3
–5
–10
–50
Collector-Emitter Voltage V C E (V)
–100
nk
0.05 0.1
si
0
0.02
at
–0.1
he
Without Heatsink
Natural Cooling
30
ite
–0.5
fin
–1
40
In
10
s
DC
ith
20
m
W
Collector Curr ent I C (A)
–5
Ma xim um Powe r Dissipation P C (W)
–20
30
Cu t-of f Fr eque ncy f T (MH Z )
DC Curr ent Gain h FE
1.35
0.65 +0.2
-0.1
sTypical Switching Characteristics (Common Emitter)
–6
2.0±0.1
ø3.75±0.2
a
4.0max
–3
PC
12.0min
IB
4.8±0.2
mp)
VCEO
10.2±0.2
e Te
V
(Cas
–80
3.0±0.2
ICBO
VCBO
16.0±0.7
Ratings
Unit
8.8±0.2
Conditions
Ratings
Symbol
20
10
2
0
Without Heatsink
0
25
50
75
100
1 25
150
Ambient Temperature Ta(˚C)
31

34. 2SA1746
LOW VCE (sat)
Silicon PNP Epitaxial Planar Transistor
sElectrical Characteristics
Unit
µA
V
IEBO
VEB=–6V
–10max
µA
–6
V
V(BR)CEO
IC=–25mA
–50min
V
–12(Pulse–20)
A
hFE
–50
VEBO
50min
VCE=–1V, IC=–5A
IB
–4
A
VCE(sat)
IC=–5A, IB=–80mA
–0.5max
PC
60(Tc=25°C)
W
VBE(sat)
IC=–5A, IB=–80mA
–1.2max
150
°C
fT
VCE=–12V, IE=1A
25typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
400typ
pF
3.3
3.0
V
1.05 +0.2
-0.1
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
4
–5
–10
5
–80
80
0.5typ
0.6typ
0.3typ
4.4
V CE ( sat ) – I B Characteristics (Typical)
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I B =–10mA
–2
0
0
–1
–2
–3
–4
–5
–3A
0
–3
–6
–10
–100
h FE – I C Temperature Characteristics (Typical)
(V C E =–1V)
500
Typ
100
Transient Thermal Resistance
125˚C
D C Cur r ent Gai n h F E
500
25˚C
–30˚C
100
–5
–1
50
–0.03
–10
Collector Current I C (A)
p)
)
em
emp
eTe
–0.5
–0.1
–0.5
–1.0
–1.5
–5
–1
–10
θ j-a – t Characteristics
4
1
0.5
0.2
1
10
100
1000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
40
0
Base-Emittor Voltage V B E (V)
(V C E =–1V)
–0.5
0
–1000
Base Current I B (mA)
h FE – I C Characteristics (Typical)
–0.1
seT
–2
–5A
–1A
Collector-Emitter Voltage V C E (V)
50
–0.03
–4
I C =–10A
(Cas
–0.5
–30˚C
–4
–6
seT
–30m A
–8
(Ca
–6
–1.0
(Ca
–50mA
˚C
–8
–10
125
Collector Current I C (A)
–70mA
(V C E =–1V)
25˚C
–10
E
–12
–1.5
Collector Current I C (A)
–100 mA
C
I C – V BE Temperature Characteristics (Typical)
θ j - a (˚ C/W)
–12mA
Collector-Emitter Saturation Voltage V C E (s a t) (V )
–12
B
3.35
1.5
tf
(µs)
–20
0.65 +0.2
-0.1
5.45±0.1
1.5
VCC
(V)
I C – V CE Characteristics (Typical)
0.8
2.15
5.45±0.1
sTypical Switching Characteristics (Common Emitter)
D C Cur r ent Gai n h F E
1.75
16.2
Tstg
3.45 ±0.2
ø3.3±0.2
a
b
V
Tj
5.5±0.2
mp)
VCEO
15.6±0.2
5.5
–10max
V
1.6
VCB=–70V
–70
9.5±0.2
ICBO
VCBO
Symbol
23.0±0.3
Ratings
Unit
IC
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
Ratings
Symbol
0.8±0.2
sAbsolute maximum ratings (Ta=25°C)
Application : Chopper Regulator, Switch and General Purpose
60
–30
10
s
s
at
si
20
nk
Collector Curre nt I C (A)
he
Without Heatsink
Natural Cooling
ite
–1
fin
10
40
In
20
–5
ith
Cu t-of f Fr eque ncy f T (MH Z )
m
Typ
W
Maxim um Power Dissip ation P C (W)
0µ
s
10
1m
–10
30
Without Heatsink
0
0.1
1
Emitter C urrent I E (A)
32
10
–0.3
–3
–10
–50
Collector-Emitter Voltage V C E (V)
–100
3.5
0
0
25
50
75
100
Ambient Temperature Ta(˚C)
125
150

35. 2SA1859/1859A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A)
–150
VCB=
–180
V
VEB=–6V
IC
–2
A
µA
IC=–10mA
V(BR)CEO
–10max
–150min
–180min
60 to 240
V
IEBO
–1
A
hFE
VCE=–10V, IC=–0.7A
PC
20(Tc=25°C)
W
VCE(sat)
IC=–0.7A, IB=–70mA
–1.0max
V
Tj
150
°C
fT
VCE=–12V, IE=0.7A
60typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
30typ
pF
13.0min
Tstg
3.9
IB
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
–20
20
–1
–10
5
–100
100
0.5typ
1.0typ
0.5typ
Weight : Approx 6.5g
a. Part No.
b. Lot No.
tf
(µs)
–4
–6
–8
0
–2
–10
Collector-Emitter Voltage V C E (V)
–5
–10
–50 –100
(V C E =–4V)
300
DC Cur rent Gain h FE
125˚C
Typ
100
–1
25˚C
100
–30˚C
50
–0.01
–2
f T – I E Characteristics (Typical)
p)
eTem
(Cas
–1
–0.1
–0.5
–1
–2
7
5
1
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
Collector Current I C (A)
25˚C
–0.5
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
300
–0.5
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.1
0
–500 –1000
Base Current I B (mA)
h FE – I C Characteristics (Typical)
50
–0.01
mp)
–1A
θ j - a (˚ C/W)
–2
0
I C =–2A
–0.5A
Transient Thermal Resistance
0
–1
–1
eTe
I B =–5mA
Cas
–1
–2
˚C (
–10 mA
(V C E =–4V)
–2
–3
125
5mA
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
A
A
0m
–3
0m
00
–1
–6
m
A
–2
–1
B C E
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (sa t) (V )
I C – V CE Characteristics (Typical)
2.4±0.2
2.2±0.2
VCC
(V)
Collector Current I C (A)
1.35±0.15
2.54
sTypical Switching Characteristics (Common Emitter)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
20
–5
nk
Collector Cur rent I C (A)
si
Collector-Emitter Voltage V C E (V)
10
at
2
–50 –100 –200
he
–10
ite
1
–5
fin
–0.01
–1
Without Heatsink
Natural Cooling
1.2SA1859
2.2SA1859A
In
–0.5
ith
–0.1
W
2
s
1
s
Emitter Current I E (A)
0.5
0m
0.1
C
–0.5
20
0.05
ms
40
10
60
0
0.01
D
–1
Typ
1m
10
80
M aximum Po wer Dissipat io n P C (W)
100
Cut -off Fre quen cy f T ( MH Z )
DC Curr ent Gain h F E
ø3.3±0.2
a
b
p)
V
aseTem
V
–6
4.2±0.2
2.8 c0.5
–30˚C (C
–180
VEBO
10.1±0.2
µA
–10max
ICBO
4.0±0.2
–150
V
External Dimensions FM20(TO220F)
Unit
0.8±0.2
VCEO
–180
Conditions
8.4±0.2
–150
Symbol
16.9±0.3
VCBO
Unit
(Ta=25°C)
Ratings
2SA1859 2SA1859A
±0.2
sElectrical Characteristics
sAbsolute maximum ratings (Ta=25°C)
Ratings
Symbol
2SA1859 2SA1859A
Application : Audio Output Driver and TV Velocity-modulation
2
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
33

36. 2SA1860
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886)
sAbsolute maximum ratings (Ta=25°C)
sElectrical Characteristics
Unit
µA
V
IEBO
VEB=–5V
–100max
µA
IC=–25mA
–150min
V
VEBO
–5
V
V(BR)CEO
IC
–14
A
hFE
A
VCE(sat)
80(Tc=25°C)
W
fT
150
°C
COB
–55 to +150
°C
–2.0max
MHz
400typ
pF
ø3.3±0.2
a
b
V
50typ
VCB=–10V, f=1MHz
–3
PC
IC=–5A, IB=–500mA
VCE=–12V, IE=2A
IB
Tstg
50min∗
VCE=–4V, IC=–5A
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
1.75
1.05 +0.2
-0.1
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
12
–5
–10
5
–500
500
0.25typ
0.85typ
0.2typ
1.5
Weight : Approx 6.5g
a. Part No.
b. Lot No.
–1
–2
–3
–4
0
0
–0.2
–0.4
Collector-Emitter Voltage V C E (V)
–0.6
–0.8
(V C E =–4V)
200
200
Typ
50
–0.5
–1
–5
Transient Thermal Resistance
DC Cur rent Gain h FE
125˚C
–0.1
25˚C
100
–30˚C
50
30
–0.02
–10 –14
–0.1
–0.5
f T – I E Characteristics (Typical)
p)
emp
)
p)
Cas
eT
Tem
Tem
˚C (
se
–1
–2
–1
–5
θ j-a – t Characteristics
–10 –14
3
1
0.5
0.1
1
10
Collector Current I C (A)
Collector Current I C (A)
ase
0
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
20
–0.02
0
–1.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
100
(Ca
–5A
θ j- a ( ˚C/W)
0
–5
I C =–10A
–30
I B =–20mA
–1
C (C
–50mA
–5
–10
25˚
–100 mA
–2
˚C
–1 50 m A
(V C E =–4V)
125
mA
E
–14
Collector Current I C (A)
Collector-Emitter Saturation Voltage V C E (s at) (V )
00
–7
–200
C
3.35
I C – V BE Temperature Characteristics (Typical)
–3
A
m mA
mA
mA
00 500 400
00
–
–3
–6 –
–10
0
B
V CE ( sat ) – I B Characteristics (Typical)
mA
–14
Collector Current I C (A)
4.4
tf
(µs)
–60
0.65 +0.2
-0.1
5.45±0.1
1.5
I C – V CE Characteristics (Typical)
0.8
2.15
5.45±0.1
sTypical Switching Characteristics (Common Emitter)
100
1000 2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
80
–40
10
–10
si
nk
Collect or Cur ren t I C (A)
40
at
Without Heatsink
Natural Cooling
he
–0.5
ite
–1
60
fin
20
s
–5
In
40
C
s
s
ith
Typ
m
W
D
60
10
0m
1m
M aximum Power Dissipa ti on P C (W)
80
Cu t-off Fre quen cy f T (M H Z )
DC Cur rent Gain h FE
3.45 ±0.2
3.0
–150
5.5±0.2
3.3
VCEO
15.6±0.2
5.5
–100max
V
1.6
VCB=–150V
–150
9.5±0.2
ICBO
VCBO
Symbol
23.0±0.3
Ratings
Unit
Tj
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
Ratings
16.2
Symbol
Application : Audio and General Purpose
0.8±0.2
LAPT
20
–0.1
0
0.02
0.1
1
Emitter Current I E (A)
34
10
–0.05
–2
Without Heatsink
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
3.5
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150