Latest Developments in Nanotechnology: Singularity University Presentation
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Latest Developments in Nanotechnology
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Latest Developments in Nanotechnology: Singularity University Presentation
- 1. Latest Developments and Current Capabilities in Nanotechnology Brian Wang July 16, 2009
- 6. Double, Triple, Quad Litho
- 12. Nanomed today Nanoparticles is a microscopic particle with at least one dimension less than 100 nm. Liposomes is a spherical vesicle composed of a bilayer membrane. In biology, this specifically refers to a membrane composed of a phospholipid and cholesterol bilayer Antibody conjugates A conjugate vaccine is created by covalently attaching a poor antigen to a carrier protein, thereby conferring the immunological attributes of the carrier on the attached antigen. This technique for the creation of an effective immunogen is most often applied to bacterial polysaccharides for the prevention of invasive bacterial disease.
- 15. CNT Yarn and Sheets
- 27. Fab in a Box
- 28. Fab in a Box
- 33. Roadmap
- 35. Plasmonic Lithography Engineers at the University of California, Berkeley, are reporting a new way of creating computer chips that could enable commercial speed 5 nanometer optical lithography. It can also mean higher density hard drives and optical disks with 20 times the density of Blu-ray. The 5 page research paper: Flying plasmonic lens in the near field for high-speed nanolithography, Published online: 12 October 2008; doi:10.1038/nnano.2008.303. The researchers designed an air bearing that uses the aerodynamic lift force created by the spinning to help keep the two surfaces a mere 20 nanometers apart. Air bearings are used to create magnetic tapes and disk drives, but this is the first application for a plasmonic lens. With this innovative setup, the engineers demonstrated scanning speeds of 4 to 12 meters per second.
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- 16-19 million wafers per year. 10^11 transistors per wafer. 2 X 10^18 transisters per year. Synapses are Memristors and memristors are nanoscale
- http://books.google.com/books?id=cCGU7Lwn-noC&pg=PA71&lpg=PA71&dq=two+photon+polymerization+wafers+per+hour&source=bl&ots=I438-lxV3K&sig=VLJTtnqagt13ZzR8CqhmxeddQCs&hl=en&ei=VUZOSuuyHYWOtAPeqsXpBQ&sa=X&oi=book_result&ct=result&resnum=1 Nanofabrication by Zheng Cui 2008 EUV power source of 115 watts, resist sensitivity of 3 mJ cm ^-2 needed for 100 wafers per hour Line edge roughness critical for all sub-100nm lithography Outgassing of resist another issue Now Deep UV (DUV, 20 million per machine), EUV (Extreme UV) 50 million per machine Fabrication by scanning probes (field induced deposition, dip pen lithography) subtractive fabrication (electrochemical etching, field induced decompisition, thermomechanical indentation, mechanical scratching) High throughput SPL Photon-based lithography Charged particle beams lithography Nanofabrication using scanning probes Nanoscale replication Nanoscale pattern transfer Indirect nanofabrication Nanofabrication by self-assembly Nanoimprint (reverse nanoimprint) Nanoscale pattern transfer (additive/subtractive transfer) Indirect nanofabrication
- http://nanoparticledrugdelivery.blogspot.com
- http://nextbigfuture.com/2009/02/hydrophobic-sand-details-waterproof.html
- The diamond heat spreading layer directly under the junction can allow for more than a 100% increase in power levels compared to silicon substrates alone, and a 50-80% increase when compared to SiC, at a fixed junction temperature. At fixed power, they can reduce junction temperature by more than 50 degrees compared to GaN on silicon or SiC. http://www.betasights.net/wordpress/?p=693 Diamond transistors 50 nm http://www.electronicsweekly.com/Articles/2009/04/16/45900/glasgow-uni-develops-diamond-transistor-with-50nm-gate.htm http://www.theinquirer.net/inquirer/news/1044396/diamond-transistor-clocks Nippon Telegraph & Telephone (NT&T) to create a transistor that will clock 120GHz. According to nikkei.net , Element Six Limited and NT&T use chemical vapour deposition to place a coating of diamond on a polycrystalline diamond substrate. prototype stage Jan 2008, but the wire said that it will be commercialised within three years (2010-2011) http://www.prnewswire.co.uk/cgi/news/release?id=140257 Element Six (E6) announces that in collaboration with the University of Ulm in Germany it has produced preliminary microwave devices (MESFET transistors) using synthetic single crystal diamond made by chemical vapour deposition (CVD). Diamond, with its extreme physical properties, is now entering the world of high frequency electronics, making real the possibility of replacing high-power vacuum tube devices with solid-state diamond components. The intrinsic theoretical performance of diamond, coupled with this latest device, suggest that diamond could capture the entire rf device market for frequencies between 10 and 100 GHz, with devices capable of producing over 100 Watts at X-band frequencies.
- Prototype fab in a box direct write nanowire circuit has been demonstrated with error correcting fab process http://cba.mit.edu/events/08.04.ASC/Joo_Jacobson.pdf
- UCSB claims to have developed a novel, self-assembly process for creating features on silicon that are between 5- and 20-nm Several entities, including IBM Corp. and Intel Corp., are exploring a new technology called co-polymer lithography in an effort to extend Moore's Law . http://www.eetindia.co.in/ART_8800546209_1800007_NT_9dde7629.HTM http://www.slideshare.net/ucsb.ira/craig-hawker-of-ucsb-commercial-applications-of-polymer-as-nanomaterials http://www.mrl.ucsb.edu/hawker/publications.html Dendronized macromonomers for 3D data storage A series of dendritic macromonomers have been synthesized and utilized as the photoactive component in holographic storage systems leading to high performance, low shrinkage materials. http://www.mrl.ucsb.edu/hawker/research.html