1. UCN at TRIUMF
09:00-09:15 - Welcome
09:15-10:15 - UCN source overview, data, plans and progress on modifications. (Masuda et al)
1 Present UCN source at RCNP
1-1 Proton beamline, spallation target, neutron moderator, reflector and vertical He-II
1-2 UCN storage with valves
2 Next UCN source
2-1 Target moderator reflector geometry
2-2 Horizontal He-II
10:30-12:00 - UCN source implementation at TRIUMF and issues (short reports)
- recap of discussion from yesterday afternoon (Martin)
- experimental area design (UCN experimenters)
- cryogenics design (Sekachev et al)
- schedule (Verma et al)
- costs (Martin)
13:30-14:10 - overview of experiments and data acquired (Matsuta et al)
14:10-14:30 - Xe comagnetometry (Masuda?)
3 EDM measurement
3-1 UCN polarization
3-2 Ramsey resonance
3-3 Buffer gas for GPE and Xe-comagnetometer
14:30-15:00 - prototyping for Xe? e.g. measurements of E-breakdown?
15:00-15:15 - prototyping for magnetic shielding? (both mu-metal and SC?)
15:30-16:00 - discussion of experimental LOI's/proposals (Martin)
16:00-16:30 - other experiments (discussion) (Martin)
2. Superthermal UCN source
Increase n phase space density by phonon scattering
ILL, KEK-RCNP/TRIUMF, LANL, PSI, Munich, SNS, NCSU, PNPI, Indiana
UCN bottle
UCN He-II or SD2
EUCN phonon
form factor
Ein S(Q,ω)
cold n Φn
3. Superthermal UCN source
Increase n phase space density by phonon scattering
ILL, KEK-RCNP/TRIUMF, LANL, PSI, Munich, SNS, NCSU, PNPI, Indiana
UCN bottle
UCN He-II or SD2 Production rate PUCN =
EUCN phonon ∫∫σ(Ein→EUCN)Φn(Ein)NdEindEUCN
form factor d2σ/dQdω =
Ein S(Q,ω)
kf/ki σcoh/4π S(Q,ω)
cold n Φn
4. Superthermal UCN source
Increase n phase space density by phonon scattering
ILL, KEK-RCNP/TRIUMF, LANL, PSI, Munich, SNS, NCSU, PNPI, Indiana
UCN bottle
ρUCN = PUCN×τs×εext×εd
UCN He-II or SD2 Production rate PUCN =
EUCN phonon ∫∫σ(Ein→EUCN)Φn(Ein)NdEindEUCN
form factor d2σ/dQdω =
Ein S(Q,ω)
kf/ki σcoh/4π S(Q,ω)
cold n Φn
10. UCN source improvement at RCNP
ρUCN = production rate P × storage time τs,
P∝ Φn , Φn ∝ Ep×Ip
He-II film 3He, H
Date Ip τs THe-II perimeter contamination
2002 200 nA 14 s 1.2 K 8.5 cm Normal 4He
June 2006 1 μA 29 s 0.9 K 8.5 cm Normal 4He
November 1 μA 34 s 0.8 K 5 cm Normal 4He
2006
July 2007 1 μA 39 s 0.8 K 5 cm Pure 4He
Pure 4He
April 2008 1 μA 47 s 0.8 K 5 cm fomblin
December Pure 4He
1 μA 61 s 0.8 K 5 cm
2009 alkali
11. UCN source improvement at RCNP
ρUCN = production rate P × storage time τs,
P∝ Φn , Φn ∝ Ep×Ip
He-II film 3He, H
Date Ip τs THe-II perimeter contamination
3He cryostat
2002 200 nA 14 s 1.2 K 8.5 cm Normal 4He
June 2006 1 μA 29 s 0.9 K 8.5 cm Normal 4He
November 1 μA 34 s 0.8 K 5 cm Normal 4He
2006
July 2007 1 μA 39 s 0.8 K 5 cm Pure 4He
Pure 4He
April 2008 1 μA 47 s 0.8 K 5 cm fomblin
December Pure 4He
1 μA 61 s 0.8 K 5 cm
2009 alkali
12. UCN source improvement at RCNP
ρUCN = production rate P × storage time τs,
P∝ Φn , Φn ∝ Ep×Ip
He-II film 3He, H
Date Ip τs THe-II perimeter contamination
2002 200 nA 14 s 1.2 K 8.5 cm Normal 4He
Suppress
June 2006 1He-II film flow
μA 29 s 0.9 K 8.5 cm Normal 4He
November 1 μA 34 s 0.8 K 5 cm Normal 4He
2006
July 2007 1 μA 39 s 0.8 K 5 cm Pure 4He
Pure 4He
April 2008 1 μA 47 s 0.8 K 5 cm fomblin
December Pure 4He
1 μA 61 s 0.8 K 5 cm
2009 alkali
13. UCN source improvement at RCNP
ρUCN = production rate P × storage time τs,
P∝ Φn , Φn ∝ Ep×Ip
He-II film 3He, H
Date Ip τs THe-II perimeter contamination
2002 200 nA 14 s 1.2 K 8.5 cm Normal 4He
June 2006 1 μA 29 s 0.9 K 8.5 cm Normal 4He
Remove 3He
November 1 μA 34 s 0.8 K 5 cm Normal 4He
2006
July 2007 1 μA 39 s 0.8 K 5 cm Pure 4He
Pure 4He
April 2008 1 μA 47 s 0.8 K 5 cm fomblin
December Pure 4He
1 μA 61 s 0.8 K 5 cm
2009 alkali
14. UCN source improvement at RCNP
ρUCN = production rate P × storage time τs,
P∝ Φn , Φn ∝ Ep×Ip
He-II film 3He, H
Date Ip τs THe-II perimeter contamination
2002 200 nA 14 s 1.2 K 8.5 cm Normal 4He
June 2006 1 μA 29 s 0.9 K 8.5 cm Normal 4He
November 1 μA 34 s 0.8 K 5 cm Normal 4He
2006
July 2007 1 μA 39 s 0.8 K 5 cm Pure 4He
Remove
Hydrogen Pure 4He
April 2008 1 μA 47 s 0.8 K 5 cm fomblin
December Pure 4He
1 μA 61 s 0.8 K 5 cm
2009 alkali
15. UCN source improvement at RCNP
ρUCN = production rate P × storage time τs,
P∝ Φn , Φn ∝ Ep×Ip
He-II film 3He, H
Date Ip τs THe-II perimeter contamination
2002 200 nA 14 s 1.2 K 8.5 cm Normal 4He
June 2006 1 μA 29 s 0.9 K 8.5 cm Normal 4He
November 1 μA 34 s 0.8 K 5 cm Normal 4He
2006
July 2007 1 μA 39 s 0.8 K 5 cm Pure 4He
Remove
Hydrogen Pure 4He
April 2008 1 μA 47 s 0.8 K 5 cm fomblin
December Pure 4He
1 μA 61 s 0.8 K 5 cm
2009 alkali
16. EDM
cell UCN
UCN valve
We are constructing
a new He-II UCN source
1.2 m
Present
vertical
source of 20 kW
lead target
Temperature
4. No gravitational
barrier
UCN
Window phonon 3 mK
EDM He-II
cell UCN
Cold
20~80 K
UCN valve
3. Smaller UCN loss
d Thermal
2. Short distance 300 K
1. Neutron production
×50 lead target n production
several 1010 K
17. Conceptual design of the new UCN source
1. Neutron production ×50 2. Short distance distance between He-II and target
3. Smaller UCN loss 4. No gravitational barrier
EDM He-II cryostat
Permalloy
2 mG
Ho
Spherical coil
Silica cell 100 mG Actuator GM cryostat
pumping
VF = 90 neV
H1
UCN source
585 110 80 80
200
3He
Door
valve
GM cryostat
70
Liq.He
Silica guide Spin flipper
605 1K
pot
Level meter
114 40
Fe foil evacuation
72.4
5L
pot 20K D22O
20K D O
85
72
Rotary
.4
He-II
89
valve
89 UCN VF = 210 neV
300
valve
UCN He- He
3 4
heat 300K D2O
valve exchanger
UCN detector
Concrete Iron Graphite
20. Construction of He-II cryostat
will be in FY2010
Super leak for isotopically pure 4He production
He-II cooling by means of 3He pumping
UCN valve in He-II
By evaporated 4He gas
pre-cooling circulating 3He gas
pre-cooling pure 4He gas
cooling 77K radiation shield
21. Present Cu-fin heat exchanger
for He-II cooling
3He side
4He side
Heat exchange area will be increased for
TRIUMF