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Controlled morphology of
electrodeposited CuSCN by
variation of applied bias
voltage
Presented by
SOHAM GHOSH
Dept. Energy Science and Engineering

ICAER-2013
Outline
•
•
•
•
•
•

Sensitized solar cell (SSC),
Motivation of the work,
Applied bias dependent CuSCN morphology,
Deposition time dependent CuSCN morphology,
Application,
Summary.

2
Dye Sensitized Solar Cell

 Contains three individual layers
namely: the electron collector, absorber
layer or the dye and the electrolyte or
hole conducting material
 e-h pairs separated due the presence
of band-offset at each interface

Efficiency reached > 11% for lab based
devices
Easy fabrication; Less energy
consuming
Less pay-back period than Si based solar cell

DSSC

3
Semiconductor Sensitized Solar Cell
Degradation of dye with time (mainly the UV degradation)

Liquid electrolyte (improper packaging)

FTO
Au

•Dye is replaced by a low band-gap semiconductor

material leading to an intermediate solid state
DSSC,
•Electrolyte is
also replaced by a solid
semiconductor making the whole device as a solid
state device.

CuSCN
CdS
ZnO

Electron
Hole

4
Motivation of the work

CuSCN
Sensitizer
ZnO Nanorods

5
Contd.

Ag
Electron
Collector
Sensitizer

CuSCN
Nanorod
FTO

6
Contd.
•

•
•
•

The percolation of hole collecting material into the pores in nanoporous
substrates is quite limited,
Inverse structural design using p-type semiconductor nanorods as
building blocks,
Surface area will increase and interface charge recombination will
reduce resulting better charge transport,
Hole conducting pathway that is likely to be diffusion limited in
comparison to the hoping and grain boundary dominated transport
mechanism.

7
Applied Bias Dependent CuSCN Morphology

SEM images of the CuSCN films deposited at (A) -0.30 V, (B) -0.31 V, (C) 0.32 V, (D) -0.35 V, (E) -0.40 V (F) -0.42 V
8
XRD Pattern of CuSCN

* FTO Glass

*

* *

Intensity (a.u.)

*

10

15

20

25

30

35

40

*
*

60

65

*

(107)
(113)

(241)

(006)
(104)
(015)

(101)

(003)

*

*

-0.30V
-0.31V
-0.32V
-0.35V
-0.40V
-0.42V

45

50

55

70

75

80

2 Theta (deg.)

9
Deposition Time Dependent CuSCN Morphology

SEM of time dependant deposition film for (A) 1hr (B) 2hr (C) 3hr
10
TEM of CuSCN Nanorods

Transmission electron microscopy of CuSCN nanorods
11
Photovoltaic Application

Jsc = 8.8 mA/cm2
Voc = 0.68
FF = 0.63
η = 3.9%

12
Summary
•
•
•
•

Well shaped nanorods can be deposited under a potential of -0.3V,
With increasing the applied potential nanorods were started
agglomerated gradually,
With increasing deposition time the nanorods diameter started to
increase,
Application for Semiconductor Sensitized Solar Cell.

13
14
Fabrication Methodology of Copper Thiocyanate
Experimental details:
• Electrolyte contains Cu+2 and SCN- ions in a water-ethanol system
Applied Potential: -0.3 to -0.42 V
Reaction at Cathode:
• Cu(ClO4)2
• NaSCN
• Cu+2 + SCN• CuSCN+ + e-

Cu2+ + 2ClO4Na+ + SCNCuSCN+
CuSCN

15
SEM images of the CuSCN films deposited at (A) -0.30 V, (B) -0.31 V

16
SEM images of the CuSCN films deposited at (C) -0.32 V, (D) -0.35 V

17
SEM images of the CuSCN films deposited at (A) -0.40 V, (B) -0.41 V

18

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367 controlled morphology of electrodeposited cu scn by variation of applied bias voltage

  • 1. Controlled morphology of electrodeposited CuSCN by variation of applied bias voltage Presented by SOHAM GHOSH Dept. Energy Science and Engineering ICAER-2013
  • 2. Outline • • • • • • Sensitized solar cell (SSC), Motivation of the work, Applied bias dependent CuSCN morphology, Deposition time dependent CuSCN morphology, Application, Summary. 2
  • 3. Dye Sensitized Solar Cell  Contains three individual layers namely: the electron collector, absorber layer or the dye and the electrolyte or hole conducting material  e-h pairs separated due the presence of band-offset at each interface Efficiency reached > 11% for lab based devices Easy fabrication; Less energy consuming Less pay-back period than Si based solar cell DSSC 3
  • 4. Semiconductor Sensitized Solar Cell Degradation of dye with time (mainly the UV degradation) Liquid electrolyte (improper packaging) FTO Au •Dye is replaced by a low band-gap semiconductor material leading to an intermediate solid state DSSC, •Electrolyte is also replaced by a solid semiconductor making the whole device as a solid state device. CuSCN CdS ZnO Electron Hole 4
  • 5. Motivation of the work CuSCN Sensitizer ZnO Nanorods 5
  • 7. Contd. • • • • The percolation of hole collecting material into the pores in nanoporous substrates is quite limited, Inverse structural design using p-type semiconductor nanorods as building blocks, Surface area will increase and interface charge recombination will reduce resulting better charge transport, Hole conducting pathway that is likely to be diffusion limited in comparison to the hoping and grain boundary dominated transport mechanism. 7
  • 8. Applied Bias Dependent CuSCN Morphology SEM images of the CuSCN films deposited at (A) -0.30 V, (B) -0.31 V, (C) 0.32 V, (D) -0.35 V, (E) -0.40 V (F) -0.42 V 8
  • 9. XRD Pattern of CuSCN * FTO Glass * * * Intensity (a.u.) * 10 15 20 25 30 35 40 * * 60 65 * (107) (113) (241) (006) (104) (015) (101) (003) * * -0.30V -0.31V -0.32V -0.35V -0.40V -0.42V 45 50 55 70 75 80 2 Theta (deg.) 9
  • 10. Deposition Time Dependent CuSCN Morphology SEM of time dependant deposition film for (A) 1hr (B) 2hr (C) 3hr 10
  • 11. TEM of CuSCN Nanorods Transmission electron microscopy of CuSCN nanorods 11
  • 12. Photovoltaic Application Jsc = 8.8 mA/cm2 Voc = 0.68 FF = 0.63 η = 3.9% 12
  • 13. Summary • • • • Well shaped nanorods can be deposited under a potential of -0.3V, With increasing the applied potential nanorods were started agglomerated gradually, With increasing deposition time the nanorods diameter started to increase, Application for Semiconductor Sensitized Solar Cell. 13
  • 14. 14
  • 15. Fabrication Methodology of Copper Thiocyanate Experimental details: • Electrolyte contains Cu+2 and SCN- ions in a water-ethanol system Applied Potential: -0.3 to -0.42 V Reaction at Cathode: • Cu(ClO4)2 • NaSCN • Cu+2 + SCN• CuSCN+ + e- Cu2+ + 2ClO4Na+ + SCNCuSCN+ CuSCN 15
  • 16. SEM images of the CuSCN films deposited at (A) -0.30 V, (B) -0.31 V 16
  • 17. SEM images of the CuSCN films deposited at (C) -0.32 V, (D) -0.35 V 17
  • 18. SEM images of the CuSCN films deposited at (A) -0.40 V, (B) -0.41 V 18