Cleo 2014 technology transfer program
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This paper outlines the basic technology and economic model of the core silicon technology. Silicon is the second most abundant element on the earth’s crust but there is no specific deposit or mine for silicon.
The only source for silicon is “sand” that the earth has an abundant supply. Here we outline the basic steps of manufacturing silicon ingot and wafers. It is projected that, once produced, these products will gain immediate market access, thus creating economic activities in a reasonably short period of time. The three initial products that could stem from the basic silicon ingot are silicon wafers, for both semiconductor and solar cell applications, and optical fiber for communication. This report focuses on the essential silicon
technology to produce silicon ingot, and silicon wafer, as the first step. Finally, the historic data available for the silicon wafer consumption per year have been modeled with the well-known Bass diffusion model.
It was found that with modified parameters, the Bass model fits the historic data well and the same model allows a projection for a few years in the future. This projected economic activities, therefore, encourages a social transformation towards a technological self-sufficiency.
Keywords: Silicon technology; Bass diffusion model; Silicon wafer consumption; Social transformation;
Technological self-sufficiency
DOI: 10.31031/NRS.2022.11.000760Silicon Technology as the Core for Semiconductor, Solar Cell and Optical Fi...
Silicon Technology as the Core for Semiconductor, Solar Cell and Optical Fi...Applied Research and Photonics, Inc.
Abstracts and Bios of the Chief Guest, Guest of Honor, distinguished Speakers and Panelists of the 2021 AABEA-FOBANA joint Seminar in Washington DC, November 27 and 28, 2021.AABEA-FOBANA joint seminar 2021 program-schedule_abstractsandbios_frontpage1
AABEA-FOBANA joint seminar 2021 program-schedule_abstractsandbios_frontpage1Applied Research and Photonics, Inc.
Lattice dilation of metallic nickel film deposited by plasma-spraying on a ceramic layer that is also prepared by plasma-spraying, has been investigated by high resolution terahertz imaging and sequential zooming of the images to quantify the lattice parameter by graphical analysis. A metallic nickel sample
was first imaged, and its measured lattice constant was found to be in agreement with the known value.
Subsequently, four additional samples containing plasma-sprayed nickel film have also been imaged via an identical procedure. The lattice images of all samples were used for graphical analysis and quantification of the respective lattice parameters. Four samples, viz., 77, 81, 129 and 111 have been analyzed and their lattice dilation was investigated. It was found that the lattice distance (d) of these samples is in the order as, d77 < d81 < d129 < d111 and higher than the value of metallic nickel. Unit cell volume and density were also calculated for each sample from the measured lattice parameter. The density was found in the decreasing order for the 4 samples; i.e., ρρρ ρ77 > ρ81 > ρ129 > ρ111 and the density values are significantly lower than the value for nickel. To our knowledge, this is the first direct evidence of the lattice dilation of plasma-sprayed metallic nickel measured via the terahertz lattice imaging, without requiring an electron microscope. Thus, the results presented herein establish an exciting extension of camera-less, reconstructive terahertz imaging technique that produces such a clear lattice image of nickel and allows to quantify the lattice parameter. The technique, however, is a general one, applicable to any material.Lattice dilation of plasma sprayed nickel film quantified by high resolution ...
Lattice dilation of plasma sprayed nickel film quantified by high resolution ...Applied Research and Photonics, Inc.
Abstract— This paper demonstrates overcoming of the Abbe diffraction limit (ADL) on image resolution. Here, terahertz multispectral reconstructive imaging has been described and used for analyzing nanometer size metal lines fabricated on a silicon wafer. It has also been demonstrated that while overcoming the ADL is a required condition, it is not sufficient to achieve sub-nanometer image resolution with longer wavelengths. A nanoscanning technology has been developed that exploits the modified Beer-Lambert’s law for creating a measured reflectance data matrix and utilizes the ‘inverse distance to power equation’ algorithm for achieving 3D, sub-nanometer image resolution. The nano-lines images reported herein, were compared to SEM images. The terahertz images of 70 nm lines agreed well with the TEM images. The 14 nm lines by SEM were determined to be ~15 nm. Thus, the wavelength dependent Abbe diffraction limit on image resolution has been overcome. Layer-by-layer analysis has been demonstrated where 3D images are analyzed on any of the three orthogonal planes. Images of grains on the metal lines have also been analyzed. Unlike electron microscopes, where the samples must be in the vacuum chamber and must be thin enough for electron beam transparency, terahertz imaging is non-destructive, non-contact technique without laborious sample preparation.Nanoscale metrology of line patterns on semiconductor by continuous wave tera...
Nanoscale metrology of line patterns on semiconductor by continuous wave tera...Applied Research and Photonics, Inc.
Abstract:
This paper demonstrates overcoming of the Abbe diffraction limit (ADL) on image resolution. Here, terahertz multispectral reconstructive imaging has been described and used for analyzing nanometer size metal lines fabricated on a silicon wafer. It has also been demonstrated that while overcoming the ADL is a required condition, it is not sufficient to achieve sub-nanometer image resolution with longer wavelengths. A nanoscanning technology has been developed that exploits the modified Beer-Lambert’s law for creating a measured reflectance data matrix and utilizes the ‘inverse distance to power equation’ algorithm for achieving 3D, sub-nanometer image resolution. The nano-lines images reported herein, were compared to SEM images. The terahertz images of 70 nm lines agreed well with the TEM images. The 14 nm lines by SEM were determined to be 15 nm. Thus, the wavelength dependent Abbe diffraction limit on image resolution has been overcome. Layer-by-layer analysis has been demonstrated where 3D images are analyzed on any of the three orthogonal planes. Images of grains on the metal lines have also been analyzed. Unlike electron microscopes, where the samples must be in the vacuum chamber and must be thin enough for electron beam transparency, terahertz imaging is non-destructive, non-contact technique without laborious sample preparation.Nanoscale metrology of line patterns on semiconductor by continuous wave tera...
Nanoscale metrology of line patterns on semiconductor by continuous wave tera...Applied Research and Photonics, Inc.
Empfohlen
This paper outlines the basic technology and economic model of the core silicon technology. Silicon is the second most abundant element on the earth’s crust but there is no specific deposit or mine for silicon.
The only source for silicon is “sand” that the earth has an abundant supply. Here we outline the basic steps of manufacturing silicon ingot and wafers. It is projected that, once produced, these products will gain immediate market access, thus creating economic activities in a reasonably short period of time. The three initial products that could stem from the basic silicon ingot are silicon wafers, for both semiconductor and solar cell applications, and optical fiber for communication. This report focuses on the essential silicon
technology to produce silicon ingot, and silicon wafer, as the first step. Finally, the historic data available for the silicon wafer consumption per year have been modeled with the well-known Bass diffusion model.
It was found that with modified parameters, the Bass model fits the historic data well and the same model allows a projection for a few years in the future. This projected economic activities, therefore, encourages a social transformation towards a technological self-sufficiency.
Keywords: Silicon technology; Bass diffusion model; Silicon wafer consumption; Social transformation;
Technological self-sufficiency
DOI: 10.31031/NRS.2022.11.000760Silicon Technology as the Core for Semiconductor, Solar Cell and Optical Fi...
Silicon Technology as the Core for Semiconductor, Solar Cell and Optical Fi...Applied Research and Photonics, Inc.
Abstracts and Bios of the Chief Guest, Guest of Honor, distinguished Speakers and Panelists of the 2021 AABEA-FOBANA joint Seminar in Washington DC, November 27 and 28, 2021.AABEA-FOBANA joint seminar 2021 program-schedule_abstractsandbios_frontpage1
AABEA-FOBANA joint seminar 2021 program-schedule_abstractsandbios_frontpage1Applied Research and Photonics, Inc.
Lattice dilation of metallic nickel film deposited by plasma-spraying on a ceramic layer that is also prepared by plasma-spraying, has been investigated by high resolution terahertz imaging and sequential zooming of the images to quantify the lattice parameter by graphical analysis. A metallic nickel sample
was first imaged, and its measured lattice constant was found to be in agreement with the known value.
Subsequently, four additional samples containing plasma-sprayed nickel film have also been imaged via an identical procedure. The lattice images of all samples were used for graphical analysis and quantification of the respective lattice parameters. Four samples, viz., 77, 81, 129 and 111 have been analyzed and their lattice dilation was investigated. It was found that the lattice distance (d) of these samples is in the order as, d77 < d81 < d129 < d111 and higher than the value of metallic nickel. Unit cell volume and density were also calculated for each sample from the measured lattice parameter. The density was found in the decreasing order for the 4 samples; i.e., ρρρ ρ77 > ρ81 > ρ129 > ρ111 and the density values are significantly lower than the value for nickel. To our knowledge, this is the first direct evidence of the lattice dilation of plasma-sprayed metallic nickel measured via the terahertz lattice imaging, without requiring an electron microscope. Thus, the results presented herein establish an exciting extension of camera-less, reconstructive terahertz imaging technique that produces such a clear lattice image of nickel and allows to quantify the lattice parameter. The technique, however, is a general one, applicable to any material.Lattice dilation of plasma sprayed nickel film quantified by high resolution ...
Lattice dilation of plasma sprayed nickel film quantified by high resolution ...Applied Research and Photonics, Inc.
Abstract— This paper demonstrates overcoming of the Abbe diffraction limit (ADL) on image resolution. Here, terahertz multispectral reconstructive imaging has been described and used for analyzing nanometer size metal lines fabricated on a silicon wafer. It has also been demonstrated that while overcoming the ADL is a required condition, it is not sufficient to achieve sub-nanometer image resolution with longer wavelengths. A nanoscanning technology has been developed that exploits the modified Beer-Lambert’s law for creating a measured reflectance data matrix and utilizes the ‘inverse distance to power equation’ algorithm for achieving 3D, sub-nanometer image resolution. The nano-lines images reported herein, were compared to SEM images. The terahertz images of 70 nm lines agreed well with the TEM images. The 14 nm lines by SEM were determined to be ~15 nm. Thus, the wavelength dependent Abbe diffraction limit on image resolution has been overcome. Layer-by-layer analysis has been demonstrated where 3D images are analyzed on any of the three orthogonal planes. Images of grains on the metal lines have also been analyzed. Unlike electron microscopes, where the samples must be in the vacuum chamber and must be thin enough for electron beam transparency, terahertz imaging is non-destructive, non-contact technique without laborious sample preparation.Nanoscale metrology of line patterns on semiconductor by continuous wave tera...
Nanoscale metrology of line patterns on semiconductor by continuous wave tera...Applied Research and Photonics, Inc.
Abstract:
This paper demonstrates overcoming of the Abbe diffraction limit (ADL) on image resolution. Here, terahertz multispectral reconstructive imaging has been described and used for analyzing nanometer size metal lines fabricated on a silicon wafer. It has also been demonstrated that while overcoming the ADL is a required condition, it is not sufficient to achieve sub-nanometer image resolution with longer wavelengths. A nanoscanning technology has been developed that exploits the modified Beer-Lambert’s law for creating a measured reflectance data matrix and utilizes the ‘inverse distance to power equation’ algorithm for achieving 3D, sub-nanometer image resolution. The nano-lines images reported herein, were compared to SEM images. The terahertz images of 70 nm lines agreed well with the TEM images. The 14 nm lines by SEM were determined to be 15 nm. Thus, the wavelength dependent Abbe diffraction limit on image resolution has been overcome. Layer-by-layer analysis has been demonstrated where 3D images are analyzed on any of the three orthogonal planes. Images of grains on the metal lines have also been analyzed. Unlike electron microscopes, where the samples must be in the vacuum chamber and must be thin enough for electron beam transparency, terahertz imaging is non-destructive, non-contact technique without laborious sample preparation.Nanoscale metrology of line patterns on semiconductor by continuous wave tera...
Nanoscale metrology of line patterns on semiconductor by continuous wave tera...Applied Research and Photonics, Inc.
Two critical nanoscale design parameters (CNDPs); namely, surface chemistry and interior compositions of poly(amidoamine) (PAMAM) dendrimers were systematically engineered to produce unique hyperpolarizable, electro-optical substrates. These electro-optically active dendritic films were demonstrated to produce high quality, continuous wave terahertz radiation when exposed to a suitable pump laser that could be used for spectrometry and molecular imaging. These dendrimer based dipole excitation (DDE) terahertz sources were used to construct a working spectrometer suitable for many practical applications including THz imaging and analysis of encapsulated hydrogen species in fullerenes.Engineering dendrimers to produce dendrimer dipole excitation based terahertz...
Engineering dendrimers to produce dendrimer dipole excitation based terahertz...Applied Research and Photonics, Inc.
Abstract
Terahertz spectral analysis has been conducted on epitaxially grown semiconductor structures. Epitaxially grown semiconductors are important for microelectronic and optoelectronic devices and also for integrated circuits
fabricated using semiconductors. In this paper, we report results of terahertz time-domain spectroscopy of grown
SiGe layers on Ge buffer and separately a Ge buffer that was grown on a Si <001> wafer. In particular, evolution of
the time-domain spectra as a function of thickness of both samples was investigated by the terahertz pump-probe
technique. Representative spectra were analyzed to determine the respective layers’ spectral signatures. It was found that the spectroscopic analysis uniquely identified different layers by characteristic absorbance peaks. In addition, terahertz imaging was conducted in a non-destructive, non-contact mode for detecting lattice stacking fault and dislocations. Sub-surface imaging of grown SiGe layers on Ge buffer and that of the Ge buffer grown on a Si wafer reveals interesting lattice features in both samples. A comparison with TEM images of the samples exhibits that the terahertz image reproduces the dimensions found from TEM images within the experimental error limits. In particular, 3D images of both samples were generated by the terahertz reconstructive technique. The images were analyzed by graphical means to determine the respective layer thicknesses. Thus, this technique offers a versatile tool for both semiconductor research and in-line inspections.Terahertz Spectroscopic Analysis and Multispectral Imaging of Epitaxially Gro...
Terahertz Spectroscopic Analysis and Multispectral Imaging of Epitaxially Gro...Applied Research and Photonics, Inc.
Early stage detection of skin cancer via terahertz spectral profiling and 3D imaging. Other skin anomalies and treatment monitoring.Early stage detection of skin cancer via terahertz spectral profiling and 3D ...
Early stage detection of skin cancer via terahertz spectral profiling and 3D ...Applied Research and Photonics, Inc.
Terahertz generation via a new mechanism, "Dendrimer Dipole Excitation" (DDE).Dendrimer dipole excitation a new mechanism for terahertz generation
Dendrimer dipole excitation a new mechanism for terahertz generationApplied Research and Photonics, Inc.
Abstract: Non-destructive terahertz reflection interferometry offers many advantages for sub-surface inspection such as interrogation of hidden defects and measurement of layers’ thicknesses. Here, we describe a terahertz reflection interferometry (TRI) technique for non-contact measurement of paint panels where the paint is comprised of different layers of primer, basecoat, topcoat and clearcoat. Terahertz interferograms were generated by reflection from different layers of paints on a metallic substrate. These interferograms’ peak spacing arising from the delay-time response of respective layers, allow one to model the thicknesses of the constituent layers. Interferograms generated at different incident angles show that the interferograms are more pronounced at certain angles than others. This “optimum” angle is also a function of different paint and substrate combinations. An automated angular scanning algorithm helps visualizing the evolution of the interferograms as a function of incident angle and also enables the identification of optimum reflection angle for a given paint-substrate combination. Additionally, scanning at different points on a substrate reveals that there are observable variations from one point to another of the same sample over its entire surface area. This ability may be used as a quality control tool for in-situ inspection in a production line.Terahertz reflection interferometry for automobile paint layer thickness meas...
Terahertz reflection interferometry for automobile paint layer thickness meas...Applied Research and Photonics, Inc.
Electro-optic Dendrimer is used to generate milliwatts of terahertz power by difference frequency
method. A terahertz time-domain spectrometer (THz-TDS) has been designed around this source that
exhibits wide broadband terahertz range, 0.1 to 35 THz. Examples of molecular characterization are discussed
for three common explosives and the vibrational states of Fullerenes. The explosives’ spectra are
unique for each explosive that allow detection and identification of the species. The Fullerenes C60 and
H2@C60 also exhibit distinctively different spectra and absorbance states indicating that the THz-TDS is
suitable for probing increased number of vibrational states expected from molecular vibrations.
2011 Elsevier B.V. All rights reserved.Dendrimer based terahertz time-domain spectroscopy and applications in molecu...
Dendrimer based terahertz time-domain spectroscopy and applications in molecu...Applied Research and Photonics, Inc.
Terahertz dynamic scanning reflectometry (TDSR) was used for measuring layered materials’ deformation kinetics
spectra. Multi-layered materials are used for protective devices such as helmet and body armor. An in-situ measurement of deformation profile and other dynamic characteristics is important when such material is subjected to ballistic impacts. Current instrumentation is limited in their abilities to provide sub-surface information in a non-destructive fashion. A high sensitivity TDSR has been used to measure dynamic surface deformation characteristics in real-time (in-situ) and also at post deformation (ex-situ). Real-time ballistic deformation kinetics was captured with a high speed measurement system. The kinetics spectra was used to compute a number of crucial parameters such as deformation
length and its propagation profile, the relaxation position, and the macroscopic vibration profile. In addition, the loss of mass due to impact was quantified for accurate determination of the trauma causing energy. For non-metallic substrates, a transmitted beam was used to calibrate mass loss, a priori, of the laminate layers due to impact. Deformation kinetics information may then be used to formulate trauma diagnosis conditions from blunt hit via the Sturdivan criterion [1].
The basic difference in the proposed approach is that here diagnostic criteria are inferred by measuring the helmet itself; no need to draw blood or any biopsy from the patient. Deformation kinetics of layered personal protective material under impact vi...
Deformation kinetics of layered personal protective material under impact vi...Applied Research and Photonics, Inc.
Weitere ähnliche Inhalte
Mehr von Applied Research and Photonics, Inc.
Two critical nanoscale design parameters (CNDPs); namely, surface chemistry and interior compositions of poly(amidoamine) (PAMAM) dendrimers were systematically engineered to produce unique hyperpolarizable, electro-optical substrates. These electro-optically active dendritic films were demonstrated to produce high quality, continuous wave terahertz radiation when exposed to a suitable pump laser that could be used for spectrometry and molecular imaging. These dendrimer based dipole excitation (DDE) terahertz sources were used to construct a working spectrometer suitable for many practical applications including THz imaging and analysis of encapsulated hydrogen species in fullerenes.Engineering dendrimers to produce dendrimer dipole excitation based terahertz...
Engineering dendrimers to produce dendrimer dipole excitation based terahertz...Applied Research and Photonics, Inc.
Abstract
Terahertz spectral analysis has been conducted on epitaxially grown semiconductor structures. Epitaxially grown semiconductors are important for microelectronic and optoelectronic devices and also for integrated circuits
fabricated using semiconductors. In this paper, we report results of terahertz time-domain spectroscopy of grown
SiGe layers on Ge buffer and separately a Ge buffer that was grown on a Si <001> wafer. In particular, evolution of
the time-domain spectra as a function of thickness of both samples was investigated by the terahertz pump-probe
technique. Representative spectra were analyzed to determine the respective layers’ spectral signatures. It was found that the spectroscopic analysis uniquely identified different layers by characteristic absorbance peaks. In addition, terahertz imaging was conducted in a non-destructive, non-contact mode for detecting lattice stacking fault and dislocations. Sub-surface imaging of grown SiGe layers on Ge buffer and that of the Ge buffer grown on a Si wafer reveals interesting lattice features in both samples. A comparison with TEM images of the samples exhibits that the terahertz image reproduces the dimensions found from TEM images within the experimental error limits. In particular, 3D images of both samples were generated by the terahertz reconstructive technique. The images were analyzed by graphical means to determine the respective layer thicknesses. Thus, this technique offers a versatile tool for both semiconductor research and in-line inspections.Terahertz Spectroscopic Analysis and Multispectral Imaging of Epitaxially Gro...
Terahertz Spectroscopic Analysis and Multispectral Imaging of Epitaxially Gro...Applied Research and Photonics, Inc.
Early stage detection of skin cancer via terahertz spectral profiling and 3D imaging. Other skin anomalies and treatment monitoring.Early stage detection of skin cancer via terahertz spectral profiling and 3D ...
Early stage detection of skin cancer via terahertz spectral profiling and 3D ...Applied Research and Photonics, Inc.
Terahertz generation via a new mechanism, "Dendrimer Dipole Excitation" (DDE).Dendrimer dipole excitation a new mechanism for terahertz generation
Dendrimer dipole excitation a new mechanism for terahertz generationApplied Research and Photonics, Inc.
Abstract: Non-destructive terahertz reflection interferometry offers many advantages for sub-surface inspection such as interrogation of hidden defects and measurement of layers’ thicknesses. Here, we describe a terahertz reflection interferometry (TRI) technique for non-contact measurement of paint panels where the paint is comprised of different layers of primer, basecoat, topcoat and clearcoat. Terahertz interferograms were generated by reflection from different layers of paints on a metallic substrate. These interferograms’ peak spacing arising from the delay-time response of respective layers, allow one to model the thicknesses of the constituent layers. Interferograms generated at different incident angles show that the interferograms are more pronounced at certain angles than others. This “optimum” angle is also a function of different paint and substrate combinations. An automated angular scanning algorithm helps visualizing the evolution of the interferograms as a function of incident angle and also enables the identification of optimum reflection angle for a given paint-substrate combination. Additionally, scanning at different points on a substrate reveals that there are observable variations from one point to another of the same sample over its entire surface area. This ability may be used as a quality control tool for in-situ inspection in a production line.Terahertz reflection interferometry for automobile paint layer thickness meas...
Terahertz reflection interferometry for automobile paint layer thickness meas...Applied Research and Photonics, Inc.
Electro-optic Dendrimer is used to generate milliwatts of terahertz power by difference frequency
method. A terahertz time-domain spectrometer (THz-TDS) has been designed around this source that
exhibits wide broadband terahertz range, 0.1 to 35 THz. Examples of molecular characterization are discussed
for three common explosives and the vibrational states of Fullerenes. The explosives’ spectra are
unique for each explosive that allow detection and identification of the species. The Fullerenes C60 and
H2@C60 also exhibit distinctively different spectra and absorbance states indicating that the THz-TDS is
suitable for probing increased number of vibrational states expected from molecular vibrations.
2011 Elsevier B.V. All rights reserved.Dendrimer based terahertz time-domain spectroscopy and applications in molecu...
Dendrimer based terahertz time-domain spectroscopy and applications in molecu...Applied Research and Photonics, Inc.
Terahertz dynamic scanning reflectometry (TDSR) was used for measuring layered materials’ deformation kinetics
spectra. Multi-layered materials are used for protective devices such as helmet and body armor. An in-situ measurement of deformation profile and other dynamic characteristics is important when such material is subjected to ballistic impacts. Current instrumentation is limited in their abilities to provide sub-surface information in a non-destructive fashion. A high sensitivity TDSR has been used to measure dynamic surface deformation characteristics in real-time (in-situ) and also at post deformation (ex-situ). Real-time ballistic deformation kinetics was captured with a high speed measurement system. The kinetics spectra was used to compute a number of crucial parameters such as deformation
length and its propagation profile, the relaxation position, and the macroscopic vibration profile. In addition, the loss of mass due to impact was quantified for accurate determination of the trauma causing energy. For non-metallic substrates, a transmitted beam was used to calibrate mass loss, a priori, of the laminate layers due to impact. Deformation kinetics information may then be used to formulate trauma diagnosis conditions from blunt hit via the Sturdivan criterion [1].
The basic difference in the proposed approach is that here diagnostic criteria are inferred by measuring the helmet itself; no need to draw blood or any biopsy from the patient. Deformation kinetics of layered personal protective material under impact vi...
Deformation kinetics of layered personal protective material under impact vi...Applied Research and Photonics, Inc.
Mehr von Applied Research and Photonics, Inc. (20)
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Engineering dendrimers to produce dendrimer dipole excitation based terahertz...
Terahertz Spectroscopic Analysis and Multispectral Imaging of Epitaxially Gro...
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Deformation kinetics of layered personal protective material under impact vi...
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Cleo 2014 technology transfer program
- 1. View this email online | Send this message to a colleague Call for Speakers CLEO 2014 Technology Transfer Program Submission Deadline: 24 February 2014 Showcase your technologies to the Silicon Valley Venture Capital community and company representatives attending CLEO. You are invited to submit a presentation for the Technology Transfer Program, scheduled for CLEO 2014 on 12 June, in San Jose, California. Speakers are being solicited for two panels: Technology Transfer Tutorial: The one hour tutorial will feature 3 speakers. Speakers are encouraged from laboratories and universities to speak about technology transfer 101, as well as from start-ups to speak about starting your own business, lessons learned, and entrepreneurship. Speakers will inform attendees about the licensing process – funding, entrepreneurship, technology transfer and intellectual property. Pitch Panel: This 1.5 hour session will include 5-7 speakers presenting their technology, why it is valuable and the next steps to commercialize it. Submissions encouraged from universities, government laboratories, start-ups and established companies. Just Announced Keynote Speaker! Becoming an Entrepreneur and Sustaining a Technology Business: What It Takes in Today's World Yacov A. Shamash Vice President for Economic Development and Dean College of Engineering and Applied Sciences Stony Brook University
- 2. Submit Now If you are not the appropriate person to consider this invitation, please send it to your technology transfer office. Sponsored by: 2010 Massachusetts Ave., N.W. Washington, D.C. 20036 USA +1 202.223.8130 Media Sponsor: