SPICE MODEL of TPCP8401 (Professional+BDP N&P Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPCP8401
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
REMARK: Silicon N&P Channel MOS Type

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


N-Channel Model

Transconductance Characteristic

Circuit Simulation Result

0.26

0.21

0.16
gfs

0.11

0.06
Measurement
Simulation
0.01
0 20 40 60 80 100
ID(mA)

Comparison table

gfs
Id(mA) Error (%)
Measurement Simulation
1 0.030 0.029 -3.333
2 0.040 0.040 0
5 0.063 0.064 1.587
10 0.090 0.091 1.111
20 0.133 0.128 -3.759
50 0.200 0.203 1.500
100 0.294 0.287 -2.381


Vgs-Id Characteristic

Circuit Simulation result

1.0A

100mA

10mA

1.0mA
0V 1.0V 2.0V 3.0V
I(V3)
V_V1

Evaluation circuit

V3

0Vdc

OPEN
OPEN

U1 V2
TPCP8401 R1
5
V1 1G

2

0
0


Comparison Graph


100
Measurement
Simulation
ID - Drain Current (mA)

10

1
0 1 2 3
VGS - Gate to Source Voltage - V

Simulation Result

VGS(V)
ID(mA) Error (%)
1 1 1.0373 3.730
2 1.05 1.0668 1.600
5 1.15 1.1254 -2.139
10 1.22 1.1914 -2.344
20 1.32 1.2847 -2.674
50 1.5 1.47 -2.000
100 1.7 1.6790 -1.235


Rds(on) Characteristic


10mA

5mA

0A
0V 10mV 20mV 30mV
I(V2)
V_V3

Evaluation circuit

V2

0Vdc

OPEN
V3 OPEN
U1
TPCP8401 0Vdc

V1 R1

4 1G

0 0

Simulation Result

ID=10mA, VGS=4V Measurement Simulation Error (%)
R DS (on) 1.5  1.5577  3.847


Gate Charge Characteristic

5.0V

4.0V

3.0V

2.0V

1.0V

0V
0 0.4n 0.8n 1.2n 1.6n 2.0n
V(W1:3)
Time*1mA

Evaluation circuit

RON = 1.0
ROFF = 1e6
ION = 0
IOFF = 100u D1
Dbreak
W1 OPEN
+ I2
-
W 0.1
I1 R1
I1 = 0
I2 = 1m V1 1G
TD = 0
TR = 10n 15
OPEN
TF = 10n U1
PW = 300u
PER = 500u TPCP8401
0
0

Simulation Result

VDD=15V,ID=0.1A Measurement Simulation Error (%)
Qgs 0.12 nC 0.1196 nC -0.333
Qgd 0.304 nC 0.299 nC -1.645
Qg 0.8 nC 0.816 nC 2.000


Reference

5
VDD=15V

4
GATE VOLTAGE Vg

3

2

1

0
0 0.4 0.8 1.2 1.6 2
GATE CHARGE Qg(nc)


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.1 7.2 7.19 -0.139
0.2 7 7 0
0.5 6.5 6.53 0.462
1 6 6 0.000
2 5.4 5.37 -0.556
5 4.5 4.51 0.222
10 3.9 3.88 -0.513
20 3.3 3.32 0.606


Switching Time Characteristic


4.0V

3.0V

2.0V

1.0V

0V
9.697us 10.000us 10.400us 10.700us
V(VOUT)/1.2 V(VGS)
Time

Evaluation circuit

VOUT
Vsense L3 RL

3 OPEN
30nH 300

OPEN
L4
VGS
U1 C1 R6
30nH
VD
TPCP8401 100u 3Vdc 1G
R5
50

0
0 0

Simulation Result

ID=10m A, VDD=3V
Measurement Simulation Error(%)
VGS=0/2.5V
ton 70.000 ns 72.416 ns 3.451


Output Characteristic


250mA

200mA
6.8

1.9 V
150mA

1.7 V
100mA

1.5 V
50mA

VGS=1.3 V

0A
0V 0.5V 1.0V 1.5V 2.0V
I(V3)
V_V2

Evaluation circuit

V3

0Vdc

OPEN
OPEN
U1 V2
TPCP8401
V1 2 R1
1G
1.3

0 0


Forward Current Characteristic


250mA

200mA

150mA

100mA

50mA

0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

OPEN

V1 U1
0Vdc TPCP8401
R2
1G
OPEN

0 0


Comparison Graph


100
Measurement
Simulation
Drain reverse current IDR(mA)

50

0
0 0.2 0.4 0.6 0.8 1 1.2 1.4

Source-Drain voltage VSD(V)

Simulation Result

VSD(V)
Ifwd(mA) Measurement Simulation %Error
5 0.6 0.601 0.167
10 0.65 0.646 -0.615
20 0.69 0.694 0.580
50 0.765 0.763 -0.261
100 0.825 0.826 0.121


Reverse Recovery Characteristic

400mA

200mA

0A

-200mA

-400mA
14.96us 15.00us 15.04us 15.08us 15.12us 15.16us
I(RL)
Time

Evaluation Circuit

RL

50

U1
V1 = -9.2 V1
V2 = 10.9 D8401_N
TD = 0
TR = 10n
TF = 10n
PW = 15u
PER = 100u

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
Trj(ns) 14 14.001 0.007
Trb(ns) 25.6 25.594 -0.023
Trr(ns) 39.6 39.595 -0.013


Reverse Recovery Characteristic Reference

Trj=14(ns)
Trb=25.6(ns)
Conditions:Ifwd=lrev=0.02(A),Rl=50

Example

Relation between trj and trb


ESD PROTECTION DIODE
Zener Voltage Characteristic

10mA

5mA

0A
0V 25V 50V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m
OPEN

U1
TPCP8401
R2 R3
V1
0Vdc 1G 1G
OPEN

0
0


Zener Voltage Characteristic Reference


P-Channel Model

Transconductance Characteristic


9.5

8.5

7.5

6.5
gfs

5.5

4.5

3.5
Measurement
Simulation
2.5
0 0.4 0.8 1.2 1.6 2
ID(A)

Comparison table

gfs
- Id(mA) Error(%)
0.2 2.857 2.985 4.480
0.5 4.717 4.505 -4.494
1 6.173 6.452 4.520
2 8.696 8.969 3.139


Vgs-Id Characteristic


-10A

-8A

-6A

-4A

-2A

0A
0V -0.5V -1.0V -1.5V -2.0V -2.5V
I(V3)
V_V1

Evaluation circuit

V3

0Vdc

U1
OPEN

V2
OPEN
R1
-5
OPEN OPEN 1G
V1

TPCP8401
-3

0
0


Comparison Graph


Measurement
Simulation
1.8

1.4
ID - Drain Current (A)

1

0.6

0.2
0 1 2 3
VGS - Gate to Source Voltage - V
Simulation Result

- VGS(V)
- ID(mA) Error (%)
0.2 1.1 1.1027 0.245
0.5 1.17 1.1857 1.342
1 1.25 1.28 2.400
2 1.35 1.4131 4.674


Rds(on) Characteristic


-2.8A

-2.0A

-1.0A

0A
0V -50mV -100mV -150mV -200mV
I(V2)
V_V3

Evaluation circuit

V2

0Vdc

U1

V3 OPEN
0Vdc

V1 R1

-4.5 1G
TPCP8401
OPEN

0 0

Simulation Result

ID=-2.8A, VGS=-4.5V Measurement Simulation Error (%)
R DS (on) 31.000 m 31.761 m 2.455


Gate Charge Characteristic
-5.0V

-4.0V

-3.0V

-2.0V

-1.0V

0V
0 8n 16n 24n 32n 40n
V(W1:4)
Time*1mA

Evaluation circuit

U1

W OPEN
-
+ I2
D1
W1 Dbreak -5.5
IOFF = 100uA R1
I1 TD = 0 ION = 0
TF = 10n ROFF = 1e6 TPCP8401 1G
PW = 200u RON = 1.0 V1
OPEN
PER = 500u
I1 = 0
I2 = 1m -10
TR = 10n
0
0

Simulation Result

VDD=-10V,ID=-5.5A
,VGS=-5V
Qgs(nC) 5.5 5.4732 -0.487
Qgd(nC) 4.5 4.6618 3.596
Qg(nC) 20.5 20.547 0.229


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
- VDS(V) Error(%)
0.1 300 298 -0.667
0.2 270 273 1.111
0.5 220 218 -0.909
1 170 173 1.765
2 130 127 -2.308
5 80 81 1.250
10 55 56 1.818


Switching Time Characteristic


-10V

-8V

-6V

-4V

-2V

0V
1.9us 2.0us 2.1us 2.2us
V(U1:5) V(U1:2)/1.2
Time

Evaluation circuit

L1 R2

50nH
2.1
OPEN
L2 U1

30nH V1
V1 = 0 V2 R1
V2 = -5 R4
TD = 2u -6 1G
TR = 4n 4.7
OPEN
TF = 4n
PW = 10u
PER = 30u TPCP8401

0
0

Simulation Result

ID=-2.8 A, VDD=-6V
Measurement Simulation Error(%)
VGS=0/-5V
Ton(ns) 16 16.039 0.244


Output Characteristic


-10A

-1.9V

-8A
-1.8V

-6A -1.7V

-1.6V
-4A

VGS=-1.4V
-2A

0A
0V -2.0V -4.0V -5.0V
I(V3)
V_V2

Evaluation circuit

V3

0Vdc

U1

OPEN
V2
OPEN
V1 -5 R1
OPEN OPEN
1G
-1.4 TPCP8401

0 0


Forward Current Characteristic


100A

10A

1.0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

U1

OPEN

V1
0Vdc

R2
1G
TPCP8401
OPEN

0 0


Comparison Graph


100
Measurement
Simulation
Drain reverse current IDR(A)

10

1
0 0.4 0.8 1.2 1.6 2

Source-Drain voltage VSD(V)

Simulation Result

VSD(V)
IDR(A) Measuremen Simulation %Error
1 0.67 0.675 0.746
2 0.73 0.727 -0.411
5 0.82 0.818 -0.244
10 0.92 0.922 0.217


Reverse Recovery Characteristic

400mA

0A

-400mA
14.90us 15.04us 15.20us 15.30us
I(RL)
Time

Evaluation Circuit

RL

50

U1
D8401_P
V1 = -9.45 V1
V2 = 10.6
TD = 0
TR = 10n
TF = 10n
PW = 15u
PER = 100u

0

Compare Measurement vs. Simulation

Trj(ns) 15.2 15.2 0
Trb(ns) 72.8 72.842 0.058
Trr(ns) 88 88.042 0.048


Reverse Recovery Characteristic Reference

Trj=15.2(ns)
Trb=72.8(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


Zener Voltage Characteristic

10mA

5mA

0A
0V 25V 50V
I(R1)
V_V1

Evaluation Circuit

R1 U1

0.01m
OPEN

R2 R3
V1
0Vdc TPCP8401 1G 1G

OPEN

0
0


SPICE MODEL of TPCP8401 (Professional+BDP N&P Model) in SPICE PARK

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SPICE MODEL of TPCP8401 (Professional+BDP N&P Model) in SPICE PARK