SPICE MODEL of TPCA8028-H (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: TPCA8028-H
MANUFACTURER: TOSHIBA
Body Diode: Special Model
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2. Equivalent Circuit
D
S1
- -
+ +
R2
S
R1 10MEG DGD
10M CGD
S2
+ +
- -
Q1
S
G
S
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
1.000 25.300 26.316 4.01
2.000 41.000 41.567 1.38
5.000 62.500 62.667 0.27
10.000 85.000 84.333 -0.78
20.000 117.000 116.048 -0.81
50.000 172.000 173.010 0.59
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

5. Vgs-Id Characteristic
Circuit Simulation result
100A
80A
60A
40A
20A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vsense)
V_VGS
Evaluation circuit
Vsense
U1
TPCA8028-H
VDS
10Vdc
VGS
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1.000 2.260 2.317 2.531
2.000 2.320 2.347 1.155
5.000 2.400 2.407 0.271
10.000 2.480 2.475 -0.190
20.000 2.580 2.576 -0.167
40.000 2.720 2.724 0.132
60.000 2.840 2.842 0.063
80.000 2.950 2.945 -0.183
100.000 3.050 3.038 -0.407
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

7. Rds(on) Characteristic
Circuit Simulation result
25.0A
22.5A
20.0A
17.5A
15.0A
12.5A
10.0A
7.5A
5.0A
2.5A
0A
0V 10mV 20mV 30mV 40mV 50mV 60mV
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1
TPCA8028-H
VDS
10Vdc
VGS
10Vdc
0
Simulation Result
ID = 25A, VGS = 4.5V Measurement Simulation Error (%)
R DS (on) m 2.300 2.300 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

8. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 20n 40n 60n 80n 100n
V(W1:3)
Time*1mA
Evaluation circuit
Vsense
W1
+
I1
- D1 50Adc
W Dbreak
ION = 0A
I2 IOFF = 1mA
U1
TD = 0 TPCA8028-H
1m VD
I1 = 0 24Vdc
0
Simulation Result
VDD=24V, ID=50A,
Measurement Simulation Error (%)
VGS=10V
Qgs nC 16.000 15.985 0.094
Qgd nC 12.000 11.970 0.251
Qg nC 88.000 86.970 1.184
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error(%)
Measurement Simulation
0.100 2600.000 2590.000 0.386
0.200 2500.000 2550.000 -1.961
0.500 2300.000 2270.000 1.322
1.000 1980.000 2000.000 -1.000
2.000 1620.000 1618.000 0.124
5.000 1110.000 1090.000 1.835
10.000 800.000 790.000 1.266
20.000 510.000 520.000 -1.923
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

10. Switching Time Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
-2V
-4V
4.940us 4.980us 5.020us 5.060us 5.100us 5.136us
V(2) V(3)/1.5
Time
Evaluation circuit
R1 L1 L2
2 3
4.7 30nH 50nH
U1
V1 = 0 TPCA8028-H RL
V2 = 20 V1 0.6
TD = 5u R2
TR = 10n
TF = 10n 4.7
PW = 10u
PER = 10m VDD
15.065Vdc
0 0 0 0
Simulation Result
ID=25 A, VDD=15V
Measurement Simulation Error(%)
VGS=0/10V
ton ns 16.000 16.000 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

11. Output Characteristic
Circuit Simulation result
8 6 5 4.5
100A
10 3.1
3.0
80A
2.9
60A
2.8
40A
2.7
20A
VGS=2.5V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1
TPCA8028-H
VDS
10Vdc
VGS
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

12. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc TPCA8028-H
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

13. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
1.000 0.625 0.625 0.032
2.000 0.650 0.649 -0.231
5.000 0.680 0.681 0.147
10.000 0.710 0.709 -0.197
20.000 0.740 0.741 0.189
50.000 0.800 0.800 -0.012
100.000 0.860 0.861 0.128
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

14. Reverse Recovery Characteristics (Body Diode)
Circuit Simulation Result
1.5A
1.0A
0.5A
0A
-0.5A
-1.0A
-1.5A
-2.0A
-2.5A
1.04us 1.06us 1.08us 1.10us 1.12us 1.14us 1.16us 1.18us 1.20us 1.22us 1.24us
I(R1)
Time
Evaluation Circuit
R1 7
V1 = -15V PARAMETERS:
TF = 0.14u
V2 = 15V
TD = 12n DTPCA8028-H
U1
TR = 10ns
TF = {TF} V1
VPULSE
PW = 1us
PER = 20us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr 58.800 ns 58.677 ns -0.21
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

15. Reverse Recovery Characteristic (Body Diode) Reference
Trr=58.8ns
Conditions: di/dt=30A/us
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008