SPICE MODEL of TPCA8012-H (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPCA8012-H
MANUFACTURER: TOSHIBA
Body Diode (Special Model) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
Equivalent Circuit
D
S
- -
+ +
R3
S2 10MEG DGD
R1 CGD
10M S1
+ +
- -
S M1
G
S
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Transconductance Characteristic
Circuit Simulation Result
70
Measurement
Simulation
60
50
40
gfs
30
20
10
0
0 2 4 6 8 10
ID : Drain Current A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.100 6.061 6.250 3.118
0.200 9.091 9.524 4.763
0.500 14.286 14.286 0.000
1.000 19.582 20.408 4.218
2.000 27.571 27.778 0.751
5.000 42.455 43.860 3.309
10.000 62.667 61.350 -2.102
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Vgs-Id Characteristic
Circuit Simulation result
100A
80A
60A
40A
20A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1 Vv ariable
TPCA8012-H
10Vdc
10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
80
ID : Drain Current A
60
40
20
0
0 1 2 3 4
VGS : Gate to Source Voltage V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 2.670 2.676 0.225
2 2.720 2.716 -0.154
5 2.830 2.800 -1.060
10 2.935 2.897 -1.295
20 3.080 3.037 -1.396
30 3.150 3.147 -0.095
50 3.300 3.327 0.818
80 3.500 3.543 1.229
100 3.650 3.670 0.548
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Rds(on) Characteristic
Circuit Simulation result
25A
20A
15A
10A
5A
0A
0V 20mV 40mV 60mV 80mV 100mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
TPCA8012-H VDS
0Vdc
10Vdc
VGS
0
Simulation Result
ID=20A, VGS=10V Measurement Simulation Error (%)
R DS (on) (m) 3.700 3.701 0.027
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Gate Charge Characteristic
Circuit Simulation result
16V
12V
8V
4V
0V
0 20n 40n 60n 70n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U1
TPCA8012-H
PER = 100u Dbreak
PW = 60u W1
TF = 10n + D1
TR = 10n I2
TD = 0
- 40Adc
I2 = 1m W
I1 = 0 I1 IOFF = 0.1mA
ION = 0uA
V1
24Vdc
0
Simulation Result
VDD=24V,ID=40A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nc) 10.000 10.000 10.000
Qgd(nc) 7.000 6.982 7.000
Qg(nc) 40.000 40.036 40.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 1550.000 1560.000 0.645
0.2 1480.000 1480.000 0.000
0.5 1300.000 1305.000 0.385
1 1120.000 1115.000 -0.446
2 890.000 890.000 0.000
5 600.000 610.000 1.667
10 440.000 440.000 0.000
20 310.000 310.000 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Switching Time Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
1.88us 1.92us 1.96us 2.00us 2.04us 2.08us 2.12us 2.16us 2.20us
V(2) V(3)/1.5
Time
Evaluation circuit
3 L2
50n
RL
U1
TPCA8012-H 0.75
R3 L1 2
VDD
15Vdc
V1 = 0 30nH
V2 = 20 V2 4.7
TD = 2u R2
TR = 6n
TF = 7n 4.7
PW = 2u
PER = 10u
0
Simulation Result
ID=20A, VDD=15V
Measurement Simulation Error(%)
VGS=10V
Ton(ns) 14.000 14.023 0.164
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic
Circuit Simulation result
100A
10 4 3.8V
4.5
5
80A 6
8
3.6V
60A
40A
3.4V
3.2V
20A
VGS=3.0 V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
TPCA8012-H
Vv ariable
10Vdc
0Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Forward Current Characteristic
Circuit Simulation Result
1.0KA
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
DTPCA8012-H
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
100
Drain reverse current IDR(A)
10
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2
Drain Source voltage VDS(V)
Simulation Result
VDS(V) VDS(V)
IDR(A) %Error
Measurement Simulation
0.100 0.600 0.599 -0.167
0.200 0.620 0.619 -0.161
0.500 0.645 0.647 0.310
1.000 0.668 0.668 0.000
2.000 0.690 0.689 -0.145
5.000 0.720 0.721 0.139
10.000 0.750 0.749 -0.133
20.000 0.785 0.786 0.127
50.000 0.860 0.859 -0.116
100.000 0.955 0.957 0.209
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristics (Body Diode)
Circuit Simulation Result
2.0A
1.5A
1.0A
0.5A
0A
-0.5A
-1.0A
-1.5A
-2.0A
1.40us 1.44us 1.48us 1.52us 1.56us 1.60us 1.64us 1.68us 1.72us 1.76us
I(R1)
Time
Evaluation Circuit
R1 2 Vsense
V1 = -30V PARAMETERS:
TF = 0.975u
V2 = 30V
TD = 18.745n DTPCA8012-H_SP
U1
TR = 10ns
TF = {TF} V1
VPULSE
PW = 1us
PER = 20us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr 78.400 ns 78.581 ns 0.23
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic (Body Diode) Reference
Trr=78.40ns
Conditions: di/dt=30A/us
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007