SPICE MODEL of PC123 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:PHOTOCOUPLER
PART NUMBER:PC123
MANUFACTURER: SHARP
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

2. DIODE MODEL
Pspice model
Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
BIPOLAR JUNCTION TRANSISTOR MODEL
Pspice
model Model description
parameter
NR Reverse Emission Coefficient
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
CJC Zero-bias Collector-Base Junction Capacitance
TF Forward Transit Time
TR Reverse Transit Time
VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS)
E<Name><(+)Node><(－)Node>VALUE={Expression}
E<Name><(+)Node><(－)Node>TABLE={Expression}
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

3. VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS)
E<Name><(+)Node><(－)Node>VALUE={Expression}
CURRENT CONTROLLED MODEL(W)
Pspice
model Model description
parameter
IOFF Controlling current to Off state
ION Controlling current to On state
ROFF Off Resistance
RON On Resistance
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

4. Input Device Forward Current Characteristics
Measurement
Simulation
Input Device Junction Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

5. Input Device Reverse Recovery Characteristics
Measurement
trj=188n(s)
trb=236n(s)
Conditions:Ifwd=Irev=0.04(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

6. LED IV Curve Characteristics
Evaluation Circuit
U1
1 4
A C V2
5Vdc
I1
2 3
20mAdc K E
PC123
0 0
Simulation result
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

7. Comparison Table
Vfwd(V)
Ifwd(A) % Error
Measurement Simulation
0.001 1.15 1.1422 -0.678
0.002 1.2 1.207 0.583
0.005 1.3 1.306 0.462
0.01 1.4 1.4026 0.186
0.02 1.55 1.5391 -0.703
0.05 1.85 1.8531 0.168
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

8. Transistor Saturation Characteristics
Evaluation Circuit
U1
1 4
A C
I1
Simulation I2
20mAdc 2 3 1mAdc
K E
PC123
0 0
Simulation result
Simulation
Comparison Table
Measurement Simulation % Error
Vce(sat) (V) 0.1 0.099839 -0.161
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

9. CTR(Current Transfer Ratio) Characteristics
Evaluation Circuit
V1 V3
0Vdc 0Vdc
U1
1 4
I11 A C
20mAdc
2 3 5Vdc V2
K E
PC123
0 0
Simulation result
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

10. Rise Curve Table
CTR(%)
If(mA) % Error
Measurement Simulation
0.2 40 38.497 -3.758
0.5 80 77.906 -2.617
0.7 95 92.082 -3.072
1 110 107.023 -2.706
4 170 164.354 -3.321
7 187 187.27 0.144
Fall Curve Table
CTR(%)
If(mA) % Error
Measurement Simulation
7 187 187.270 0.144
10 175 168.287 -3.836
20 140 136.531 -2.478
30 120 117.96 -1.700
40 110 104.787 -4.739
50 95 94.573 -0.449
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

11. Switching Time Characteristics
Evaluation Circuit
V1
0Vdc
R1
U1
1 4 100
I1 A C
PER = 500u
PW = 20u
TF = 10n 2 3
TR = 10n K E V2
TD = 0 PC123 2Vdc
I2 = 20m
I1 = 0
0 0
Simulation result
Simulation
Comparison Table
Vcc=2V,IC=2mA,RL=100 Measurement Simulation % Error
Ts (us) 1 1 0
Tf (us) 8 7.9882 -0.148
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004