The document is a device modeling report for an Infineon SiC Schottky Barrier Diode with part number IDL02G65C5 from Bee Technologies. It includes the diode model parameters, simulation results of forward and reverse current characteristics and junction capacitance matching measurement data, and evaluation circuits used in the simulations.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: IDL02G65C5
MANUFACTURER: Infineon
REMARK: Professional Model

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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U1
IDL02G65C5
R1
0.01m
V1
0Vdc
0
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
0A
1.0A
2.0A
3.0A
4.0A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.1 0.966 0.961 -0.52
0.2 1.000 1.004 0.40
0.5 1.100 1.100 0.00
1 1.240 1.239 -0.08
2 1.500 1.500 0.00
4 2.000 2.000 0.00

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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V(R)
100mV 1.0V 10V 100V 1.0KV
I(V2)/(650V/100u)
0
10p
20p
30p
40p
50p
60p
70p
80p
90p
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 100us
V2 = 650
V2
0Vdc
U1
IDL02G65C5
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
6
Comparison Graph
Circuit Simulation result
Comparison table
VR(V)
C (pF)
%Error
Measurement Simulation
0.1 84.000 82.850 -1.37
0.2 82.000 80.940 -1.29
0.5 77.000 76.050 -1.23
1 70.000 69.310 -0.99
2 59.000 59.510 0.86
5 45.000 43.600 -3.11
10 33.880 32.260 -4.78
20 24.600 23.440 -4.72
50 16.800 16.030 -4.58
100 12.300 12.830 4.31
200 10.500 10.930 4.10
500 9.200 9.580 4.13

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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V_V1
100V 200V 300V 400V 500V 600V
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
U1
IDL02G65C5
V1
0Vdc
R1
100m
0
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph
Circuit Simulation result
Comparison table
IR (A)
VR (V)
%Error
Measurement Simulation
1.00E-09 480.000 414.100 -13.73
1.00E-08 563.000 560.000 -0.53
1.00E-07 650.000 648.800 -0.18