SPICE MODEL of GT10Q301 (Professional+FWD+SP PSpice Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT10Q301
MANUFACTURER: TOSHIBA
*REMARK: Free-Wheeling Diode Special Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
Collector
Gate
Emitter
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. Transfer Characteristics
Circuit Simulation result
20A
16A
12A
8A
4A
0A
0V 4V 8V 12V 16V 20V
I(U1:C)
V_VGE
Evaluation circuit
U2
DGT10Q301_SP
VCE
5Vdc
VGE U1
15Vdc GT10Q301
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Comparison Graph
Simulation result
20
Measurement
Simulation
16
COLLECTOR CURRENT, IC, (A)
12
8
4
0
0.0 4.0 8.0 12.0 16.0 20.0
GATE-EMITTER VOLTAGE, VGE, (V)
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
0.5 7.350 7.684 4.55
1 7.800 7.978 2.28
2 8.300 8.404 1.25
4 8.950 9.027 0.86
8 9.900 9.953 0.54
12 10.650 10.698 0.45
16 11.350 11.372 0.19
20 12.050 12.058 0.07
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Fall Time Characteristics
Circuit Simulation result
20V
0V
-20V
V(U1:G)
15A
0A
SEL>>
9.4us 9.8us 10.2us 10.6us 11.0us 11.4us
I(U1:C)
Time
Evaluation circuit
D1
RG2 U2 DGT10Q301
GT10Q301
-VGE
15Vdc75 L1
20mH
2 1
IC = 10
VCE
600
U3
Rg DGT10Q301_SP
V1 = -15
V2 = 15
TD = 5u V1 75
TR = 10n U1
TF = 10n GT10Q301
PW = 4.998u
PER = 100u
0
Test condition: IC=10 (A), VCC=600 (V), VGE= ±15 (V), RG=75(Ω)
Parameter Unit Measurement Simulation %Error
tf us 0.160 0.155 -3.255
toff us 0.500 0.499 -0.286
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5

6. Gate Charge Characteristics
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 20n 40n 60n 80n 100n
V(W1:1)
Time*1mA
Evaluation circuit
V2
0
IC
U2 D2
Dbreak
DGT10Q301_SP 10
I1 = 0
I2 = 1m W1 W
TF = 10n + IOFF = 100uA U1 VCC
TR = 10n ION = 0A GT10Q301
TD = 0 I2 - 600
PER = 700m
PW = 7m
0
Test condition: VCC=600 (V), IC=10 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 13.000 12.522 -3.677
Qgc nc 50.000 48.000 -4.000
Qg nc 82.000 85.040 3.707
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
6

7. Saturation Characteristics
Circuit Simulation result
20A
16A
12A
8A
4A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(IC)
V(IC:-)
Evaluation circuit
U2
DGT10Q301_SP
IC
0Adc
VGE U1
15Vdc GT10Q301
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7

8. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
Ic(A) %Error
Measurement Simulation
1 1.080 1.036 -4.12
2 1.230 1.197 -2.66
4 1.480 1.474 -0.39
8 1.900 1.925 1.32
12 2.300 2.297 -0.15
16 2.650 2.640 -0.38
20 3.000 3.005 0.17
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Output Characteristics
Circuit Simulation result
20A
15 13 12V
20 V V
16A
V
12A
VGE=10V
8A
4A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(R1)
V_VCE
Evaluation circuit
R1
0.001m
U2
DGT10Q301_SP VCE
5Vdc
VGE U1
0 GT10Q301
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
9

10. FWD Forward Current Characteristics
Circuit Simulation result
20A
16A
12A
8A
4A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vsense)
V(EC)
Evaluation circuit
Vsense
V1
EC
0Vdc
0Vdc
U2
V2 DGT10Q301_SP U1
GT10Q301
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
10

11. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
0.5 0.900 0.932 3.55
1 1.100 1.117 1.50
2 1.350 1.347 -0.21
4 1.650 1.643 -0.41
8 2.080 2.059 -1.03
12 2.430 2.399 -1.27
16 2.700 2.709 0.32
19.3 2.930 2.951 0.72
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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12. Reverse Recovery Characteristics
Circuit Simulation result
10A
0A
-10A
5.04us 5.12us 5.20us 5.28us 5.36us 5.44us
I(Vsense)
Time
Evaluation circuit
R1 Vsense
PARAMETERS:
V1 = -600V TR = 0.1u
59.9
V2 = 600V
TD = 5.08us U1
DGT10Q301_SP
TR = {TR}
TF = 10n V1
VPULSE
PW = 10u
PER = 1ms
0
Test condition: VCC=600 (V), IF=10 (A) –di/dt=200 A/usec
Parameter Unit Measurement Simulation %Error
trr ns 140.000 139.902 -0.070
Irr A 7.000 7.094 1.336
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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