This document describes measurements of electrical properties of a semiconductor device. It lists voltage values applied to the drain-source and gate-source terminals of the device and measures the resulting current values through the drain-source and gate-source connections. The target gate-source current was 100mA with a drain-source voltage of 10V and source voltage of 5V in both forward and reverse directions.

3. VDS VDS 10V

4. Id VDS 10V Id Id Measurement value of Id

5. VGS Direction of HORIZ VGS VGS Direction of VERT VDS 10V Id Id Measurement value of Id 100mA Target Vgs

9. VDS 10V Id Id Measurement value of Id 100mA Target Vgs Is

10. Vsd Vsd 5V Is Is Measurement value of Is 1mA Vsd

14. 5V 5V Forward side Reverse side DC POWER SUPPLY Reverse side