This document summarizes the device modeling report for a MOSFET transistor and body diode. It includes: 1) Component details such as part number, manufacturer, and remarks on the MOSFET and body diode models. 2) Descriptions and parameters for the MOSFET and diode SPICE models. 3) Results of circuit simulations characterizing key transistor properties like transconductance, Vgs-Id curve, gate charge, switching times and comparing to manufacturer data.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK4066-DL-E
MANUFACTURER: SANYO
REMARK: Body Diode (Professional Model) /
ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs (s)
Id(A) Error (%)
Measurement Simulation
1 24.000 24.929 3.87
2 33.750 34.985 3.66
5 52.500 54.267 3.37
10 73.000 75.091 2.86
20 101.000 103.013 1.99
50 151.000 153.696 1.79
100 202.000 204.355 1.17
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4. Vgs-Id Characteristic
Circuit Simulation result
200A
180A
160A
140A
120A
100A
80A
60A
40A
20A
0A
1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1 V2
2SK4066-DL-E
10
V1
0Vdc
0
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 2.300 2.318 0.783
2 2.350 2.352 0.085
5 2.420 2.419 -0.041
10 2.500 2.496 -0.160
20 2.610 2.608 -0.077
50 2.830 2.840 0.353
100 3.110 3.118 0.257
150 3.350 3.344 -0.179
200 3.550 3.541 -0.254
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5

6. Rds(on) Characteristic
Circuit Simulation result
50A
45A
40A
35A
30A
25A
20A
15A
10A
5A
0A
0V 20mV 40mV 60mV 80mV 100mV 120mV 140mV 160mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1
2SK4066-DL-E 0Vdc
V1
10
0
Simulation Result
ID = 50A, VGS = 10V Measurement Simulation Error (%)
R DS (on) m 3.600 3.579 -0.58
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6

7. Gate Charge Characteristic
Circuit Simulation result
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
0 50n 100n 150n 200n 250n
V(W1:3)
Time*1mA
Evaluation circuit
I2
D2
U1 Dbreak 100
2SK4066-DL-E
PER = 1000u W1
PW = 600u +
TF = 5n VDD
TR = 5n -
TD = 0 I1 W
I2 = 1m IOFF = 1mA 30
I1 = 0 ION = 0uA
0
Simulation Result
VDD=30V, ID=100A,
Measurement Simulation Error (%)
VGS=10V
Qgs nC 31.000 31.175 0.56
Qgd nC 55.000 55.069 0.13
Qg nC 220.000 222.244 1.02
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8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error (%)
Measurement Simulation
0.0 3500.00 3490.000 -0.29
1.0 1750.00 1745.000 -0.29
2.0 1200.00 1210.000 0.83
5.0 670.00 680.000 1.49
10.0 425.00 420.000 -1.18
20.0 265.00 260.000 -1.89
30.0 175.00 180.000 2.86
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9. Switching Time Characteristic
Circuit Simulation result
12V 40V
1 2
10V
8V
6V 20V
4V
2V
>>
0V 0V
0.8us 1.0us 1.2us 1.4us 1.6us 1.8us
1 V(U1:G) 2 V(U1:D)
Time
Evaluation circuit
L2 RL
50nH 0.6
R1 L1
U1
2SK4066-DL-E VDD
V1 = 0 30nH 30Vdc
V2 = 20 V2 50
TD = 1u
TR = 5n R2
TF = 5n 50
PW = 10u
PER = 20u
0
Simulation Result
ID=50A, VDD=30V
Measurement Simulation Error(%)
VGS=0/10V
td(on) ns 80.000 80.002 0.00
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9

10. Output Characteristic
Circuit Simulation result
200A
10
6
180A
55
8
160A
4
140A
120A
100A
VGS=3V
80A
60A
40A
20A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1 V2
2SK4066-DL-E
V1 10
0
0
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11. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
10mA
0V 0.3V 0.6V 0.9V 1.2V 1.5V
I(Vsense)
V_VSD
Evaluation Circuit
Vsense
0Vdc
VSD
U1
2SK4066-DL-E
0
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11

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.01 0.500 0.497 -0.60
0.02 0.518 0.516 -0.39
0.05 0.541 0.543 0.37
0.10 0.562 0.563 0.18
0.20 0.580 0.582 0.34
0.50 0.607 0.609 0.33
1.00 0.628 0.630 0.32
2.00 0.650 0.651 0.15
5.00 0.685 0.682 -0.44
10.00 0.715 0.711 -0.56
20.00 0.750 0.749 -0.13
50.00 0.825 0.827 0.24
100.00 0.925 0.924 -0.11
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13. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
18.4us 19.2us 20.0us 20.8us 21.6us 22.4us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.45v V1
V2 = 10.65v
TD = 160ns
TR = 10ns U1
TF = 10ns D2SK4066-DL-E_P
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 32.000 32.166 0.52
trb ns 192.000 192.308 0.16
trr ns 224.000 224.474 0.21
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14. Reverse Recovery Characteristic Reference
Measurement
Trj= 32 (ns)
Trb= 192 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
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15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.001m
V1
0Vdc
R2
U1
100MEG 2SK4066-DL-E
0
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16. Zener Voltage Characteristic Reference
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