This document summarizes the key parameters and simulation results for a MOSFET transistor model. It includes: 1) Details of the MOSFET part number, manufacturer, and body diode model parameters. 2) Tables comparing the simulated and measured values of characteristics like transconductance, drain current, and gate charge. 3) Circuit diagrams and graphs showing the simulation results for characteristics such as the Vgs-Id curve and switching time. 4) The document provides a model for the MOSFET transistor and evaluates it against real-world measurements.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: 2SK4062LS
MANUFACTURER: SANYO
REMARK: Body Diode (Model Parameters)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2

3. Transconductance Characteristic
Circuit Simulation Result
20
Measurement
18
Simulation
16
14
12
gfs(S)
10
8
6
4
2
0
0.0 2.0 4.0 6.0 8.0 10.0
Drain Current ID (A)
Comparison table
gfs(S)
Id(A) Error (%)
Measurement Simulation
1 6.050 6.302 4.16
2 8.400 8.687 3.41
5 13.200 13.076 -0.94
10 17.800 17.542 -1.45
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
3

4. Vgs-Id Characteristic
Circuit Simulation result
50A
40A
30A
20A
10A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
2SK4062LS V2
20
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
4

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 5.300 5.451 2.85
2 5.550 5.584 0.62
5 5.900 5.859 -0.70
10 6.200 6.184 -0.26
20 6.650 6.673 0.35
50 7.750 7.746 -0.05
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5

6. Rds(on) Characteristic
Circuit Simulation result
9.0A
8.0A
7.0A
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 2.5V
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1
2SK4062LS
0Vdc
V1
10
0
Simulation Result
ID = 9A, VGS = 15V Measurement Simulation Error (%)
R DS (on)  0.2400 0.2400 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6

7. Gate Charge Characteristic
Circuit Simulation result
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
0 10n 20n 30n 40n 50n
V(W1:3)
Time*1mA
Evaluation circuit
I2
U1 D2
2SK4062LS Dbreak 18
PER = 1000u W1
PW = 600u +
TF = 5n VDD
TR = 5n -
TD = 0 I1 W
I2 = 1m IOFF = 1mA 200
I1 = 0 ION = 0uA
0
Simulation Result
VDD=200V, ID=18A,
Measurement Simulation Error (%)
VGS=10V
Qgs nC 15.000 14.870 -0.87
Qgd nC 15.000 15.000 0.00
Qg nC 39.000 38.465 -1.37
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error (%)
Measurement Simulation
5.000 529.500 529.450 -0.01
10.000 386.000 385.630 -0.10
15.000 309.000 312.540 1.15
20.000 272.000 267.030 -1.83
25.000 235.500 235.440 -0.03
30.000 210.000 211.985 0.95
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8

9. Switching Time Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us
V(U1:G) V(U1:D)/20
Time
Evaluation circuit
L2 RL
50nH 22
U1
R1 L1 2SK4062LS
VDD
V1 = 0 30nH 202Vdc
V2 = 20 V2 50
TD = 1u
TR = 5n R2
TF = 5n 50
PW = 10u
PER = 20u
0
Simulation Result
ID=9A, VDD=200V
Measurement Simulation Error (%)
VGS=0/10V
td(on) ns 52.000 52.060 0.12
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Output Characteristic
Circuit Simulation result
60A
15V
8V
50A 10V
40A
30A
20A
10A
6V
0A
VGS=5V
0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
2SK4062LS V2
V1 30
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
10mA
0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(Vsense)
V_VSD
Evaluation Circuit
Vsense
0Vdc
VSD
U1
2SK4062LS
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(A) Error (%)
Measurement Simulation
0.01 0.5400 0.5401 0.01
0.02 0.5600 0.5603 0.05
0.05 0.5850 0.5871 0.37
0.1 0.6100 0.6078 -0.36
0.2 0.6300 0.6290 -0.16
0.5 0.6600 0.6590 -0.15
1 0.6850 0.6849 -0.01
2 0.7150 0.7166 0.22
5 0.7750 0.7779 0.37
10 0.8600 0.8559 -0.48
20 0.9900 0.9919 0.19
30 1.1200 1.1196 -0.04
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12

13. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
12us 14us 16us 18us 20us 22us 24us 26us 28us 30us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.40v V1
V2 = 10.60v
TD = 0us U1
TR = 10ns 2SK4062LS
TF = 10ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Characteristic Unit Measurement Simulation Error (%)
trj us 0.480 0.476 -0.89
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Reverse Recovery Characteristic Reference
Measurement
Trj=0.48(us)
Trb=0.52(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14