SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SJ683-TL-E
MANUFACTURER: SANYO
Body Diode (Model Parameters) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1

MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

2

Transconductance Characteristic

Circuit Simulation Result

Comparison table

gfs(S)
-Id(A) Error (%)
Measurement Simulation
1 17.600 18.236 3.61
2 24.750 25.596 3.42
5 38.850 39.876 2.64
10 54.250 55.476 2.26
20 75.000 76.703 2.27
50 113.500 116.109 2.30
100 154.500 156.691 1.42

3

Vgs-Id Characteristic

Circuit Simulation result

-120A

-100A

-80A

-60A

-40A

-20A

0A
0V -1.0V -2.0V -3.0V -4.0V
I(V3)
V_V1

Evaluation circuit

V3

0Vdc

U1
2SJ683-TL-E V2

V1 -10

0Vdc

0

4

Comparison Graph


Simulation Result

-VGS(V)
-ID(mA) Error (%)
1 2.350 2.350 0.00
2 2.400 2.395 -0.21
5 2.490 2.487 -0.12
10 2.595 2.592 -0.12
20 2.730 2.742 0.44
40 2.940 2.962 0.75
60 3.110 3.135 0.80
80 3.270 3.284 0.43
100 3.415 3.418 0.09
120 3.550 3.541 -0.25

5

Rds(on) Characteristic


-30A

-24A

-18A

-12A

-6A

0A
0V -30mV -60mV -90mV -150mV -210mV -265mV
I(V3)
V_VDS

Evaluation circuit
V3

0Vdc

VDS
U1
2SJ683-TL-E
0Vdc
V1

-10

0

Simulation Result

ID= -33A, VGS= -10V Measurement Simulation Error (%)
R DS (on) mΩ 8.000 7.989 -0.14

6

Gate Charge Characteristic

-10V

-9V

-8V

-7V

-6V

-5V

-4V

-3V

-2V

-1V

0V
0 50n 100n 150n 200n 250n 300n
V(W1:4)
Time*1mA
Evaluation circuit

U1
2SJ683-TL-E
ION = 0uA I2
I1 = 0 IOFF = 1mA D2 65
I2 = 1m W Dbreak
TD = 0 I1 -
TR = 5n +
TF = 5n VDD
PW = 600u W1
PER = 1000u
-30

0

Simulation Result

VDD= -30V,ID= -65A
Measurement Simulation Error (%)
,VGS= -10V
Qgs nC 50.000 50.257 0.51
Qgd nC 50.000 50.437 0.87
Qg nC 290.000 192.240 -33.71

7

Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VSD(V) Error(%)
0.0 1200.000 1198.000 -0.17
1.0 670.000 668.000 -0.30
2.0 498.000 502.000 0.80
5.0 320.000 323.000 0.94
10.0 225.000 223.000 -0.89
15.0 180.000 179.000 -0.56
20.0 152.000 153.000 0.66
25.0 135.000 134.000 -0.74
30.0 121.000 121.800 0.66

8

Switching Time Characteristic

-14V

-12V

-10V

-8V

-6V

-4V

-2V

0V
4.0us 4.5us 5.0us 5.5us 6.0us 6.5us 7.0us 7.5us
V(U1:G) V(U1:D)/3
Time

Evaluation circuit

L2 RL

50nH 0.9

R1 L1 U1
2SJ683-TL-E VDD
PER = 20u -30.5Vdc
PW = 10u 30nH
TF = 5n 50 R2
TR = 5n 50
TD = 5u
V2 = 20 V2
V1 = 0

0

Simulation Result

ID= -33A, VDD= -30V
Measurement Simulation Error(%)
VGS=0/-10V
td(on) ns 110.000 110.012 0.01

9

Output Characteristic


-130A
-10
-120A
-8 -6
-110A
-4
-100A

-90A

-80A

-70A

-60A

-50A
VGS=-3V
-40A

-30A

-20A

-10A

0A
0V -0.2V -0.6V -1.0V -1.4V -1.8V
I(V3)
V_V2

Evaluation circuit

V3

0Vdc

U1
2SJ683-TL-E V2

V1 -2

0

0

10

BODY DIODE SPICE MODEL
Forward Current Characteristic


100A

10A

1.0A

100mA

10mA

1.0mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
V_VSD
Evaluation Circuit

Vsense

0Vdc

U1
VSD 2SJ683-TL-E

0

11

Comparison Graph


Simulation Result

VSD (-V)
IDR(-A) %Error
0.001 0.470 0.468 -0.43
0.001 0.527 0.528 0.19
0.100 0.588 0.589 0.17
1.000 0.657 0.655 -0.30
2.000 0.682 0.679 -0.38
5.000 0.720 0.719 -0.14
10.000 0.755 0.756 0.13
20.000 0.800 0.799 -0.13
50.000 0.870 0.872 0.23
100.000 0.950 0.949 -0.11

12

Reverse Recovery Characteristic


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
8.4us 9.2us 10.0us 10.8us 11.6us 12.4us
I(R1)
Time
Evaluation Circuit

R1

50

V1 = -9.4v
V2 = 10.6v V1
TD = 20ns U1
TR = 10ns 2SJ683-TL-E
TF = 10ns
PW = 1us
PER = 100us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trj ns 60.000 60.808 1.35

13

Reverse Recovery Characteristic Reference

Measurement

Trj= 60.00 (ns)
Trb=160.00 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb

14

ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic


-10mA

-8mA

-6mA

-4mA

-2mA

0A
0V -10V -20V -30V -40V -50V
I(R1)
V_V1

Evaluation Circuit

R1

0.001m

V1

0Vdc
U1
2SJ683-TL-E R2

100MEG

0

15

Zener Voltage Characteristic Reference

16

SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK