SPICE MODEL of 2SJ464 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: 2SJ464
MANUFACTURER: TOSHIBA
REMARK: P Channel Model
Body Diode (Standard) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
-1.000 6.000 5.750 -4.167
-2.000 8.000 7.850 -1.875
-5.000 12.000 11.700 -2.500
-10.000 16.000 15.800 -1.250
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Vgs-Id Characteristic
Circuit Simulation result
-20A
-16A
-12A
-8A
-4A
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U8
2SJ464
V1 V2
0 10
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-1.000 -2.100 -2.125 1.190
-2.000 -2.300 -2.272 -1.217
-5.000 -2.600 -2.582 -0.692
-10.000 -2.950 -2.949 -0.034
-20.000 -3.500 -3.494 -0.171
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Rds(on) Characteristic
Circuit Simulation result
-10A
-5A
0A
0V -0.5V -1.0V
I(V2)
V_VDS
Evaluation circuit
V2
0Vdc
U8
2SJ464 VDS
0Vdc
VGS
-10Vdc
0
Simulation Result
ID=-9A, VGS=-10V Measurement Simulation Error (%)
R DS (on) 64.000 m 64.000 m 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Gate Charge Characteristic
Circuit Simulation result
16V
12V
8V
4V
0V
0 40n 80n 120n 160n 200n
-V(W1:4)
Time*1mA
Evaluation circuit
ION = 0uA
IOFF = 1mA
W I2
- D2
+ U11 Dbreak 18
2SJ464
I1 = 0 W1
I1
I2 = 1m
TD = 0
TR = 10n V1
TF = 10n
PW = 600u
PER = 1000u 80
0
Simulation Result
VDD=-80V,ID=-18A Measurement Simulation Error (%)
,VGS=-10V
Qgs 5.000 nC 6.084 nC 21.680
Qgd 50.000 nC 50.792 nC 1.584
Qg 140.000 nC 70.582 nC -49.584
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(nF)
VDS(V) Error(%)
Measurement Simulation
0.100 2.050 2.056 0.293
0.200 1.900 1.895 -0.263
0.500 1.550 1.551 0.065
1.000 1.250 1.252 0.160
2.000 1.000 0.997 -0.300
5.000 0.710 0.704 -0.845
10.000 0.500 0.503 0.600
20.000 0.390 0.388 -0.513
50.000 0.240 0.245 2.083
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Switching Time Characteristic
Circuit Simulation result
-13V
-10V
-5V
0V
1.91us 2.00us 2.10us 2.20us
V(2) V(3)/5
Time
Evaluation circuit
L2 R2
50nH 5.55
RG L1
PER = 2000u U9
30nH
PW = 10u 2SJ464 V1
TF = 7n 4.7
TR = 6n 50Vdc
R1
TD = 2u
V2 = 20 V2 4.7
V1 = 0
0
Simulation Result
ID=-9A, VDD=-80V
Measurement Simulation Error(%)
VGS=0/10V
ton 45.000 ns 74.487 ns 65.527
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Output Characteristic
Circuit Simulation result
-50A
-10V
-6.0V
-40A
-8.0V
-4.0V
-30A
-3.5V
-20A
-3.0V
-10A
VGS=-2.5V
0A
0V -4V -8V -12V -16V -20V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U10
2SJ464
V2
V1
0
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
20A
10A
1.0A
300mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc
U9
2SJ464
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VDS(V) VDS(V)
IDR(A) Measurement Simulation %Error
0.300 0.670 0.670 0.000
0.500 0.690 0.689 -0.145
1.000 0.710 0.709 -0.141
2.000 0.740 0.738 -0.270
5.000 0.790 0.788 -0.253
10.000 0.830 0.827 -0.361
20.000 0.890 0.892 0.225
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
13.6us 14.4us 15.2us 16.0us 16.8us 17.6us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.6v
TD = 0
TR = 10ns U9
TF = 10ns 2SJ464
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 128.000 ns 127.670 ns -0.258
trb 256.000 ns 177.603 ns -30.624
trr 384.000 ns 305.273 ns -20.502
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Reverse Recovery Characteristic Reference
Trj=128(ns)
Trb=256(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
-10mA
-9mA
-8mA
-7mA
-6mA
-5mA
-4mA
-3mA
-2mA
-1mA
0A
0V -5V -10V -15V -20V -25V -30V -35V -40V -45V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
Open
V1
0Vdc Ropen
Open 10G
U21 0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005