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2SC2715Y using multisim

2SC2715Y using multisim

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2SC2715Y using multisim

  1. 1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 1 Bee Technologies Inc. COMPONENTS:BIPOLARJUNCTIONTRANSISTOR PART NUMBER: 2SC2715Y MANUFACTURER: TOSHIBA Device Modeling Report
  2. 2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 2 Q1 Q2SC2715Y SPICE MODEL *$ *PART NUMBER: 2SC2715Y *VCEO=30V, IC[MAX]=50mA *MANUFACTURER: TOSHIBA *All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 .MODEL Q2SC2715Y NPN + IS=4.8313E-15 + BF=226.62 + VAF=201.35 + IKF=16.022E-3 + ISE=45.881E-15 + NE=1.5393 + BR=21.4134 + VAR=114 + IKR=18.340E-3 + ISC=96.020E-12 + NC=2.1801 + NK=.12171 + RB=2.0041 + RC=1.7377 + CJE=9.3626E-12 + VJE=.63716 + MJE=.30393 + CJC=3.3843E-12 + VJC=.35 + MJC=.23327 + TF=16n + XTF=10 + VTF=10 + ITF=1 + TR=20n *$
  3. 3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 3 BJT SPICE ModelParameters PSpice model parameter Model description IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient FC Coefficient for Onset of Forward-bias Depletion Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS
  4. 4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 4 Ic Vce VAR (X1,Y1) (X2,Y2) Y=aX+b Reverse Reverse Early VoltageCharacteristic
  5. 5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 5 Reverse DC Beta Characteristic (IE vs. hFE) Emitter Current (A) Measuremen t Simulation
  6. 6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 6 Ic Vce VAF (X1,Y1) (X2,Y2) Y=aX+b Forward Forward Early VoltageCharacteristic
  7. 7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 7 C-B Capacitance Characteristics REVERSE VOLTAGE VR (V) E-B Capacitance Characteristics REVERSE VOLTAGE VR (V) Measurement Simulation Measurement Simulation
  8. 8. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 8 Transistor hFE-IC Characteristics Simulation result Evaluation circuit
  9. 9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 9 ComparisonGraph Simulation result Comparison table IC (mA) hFE %Error Measurement Simulation 0.2 163.000 162.698 -0.19 0.5 177.000 176.532 -0.26 1.0 185.000 184.829 -0.09 2.0 191.000 190.627 -0.20 5.0 193.000 194.007 0.52 10.0 193.000 193.172 0.09 20.0 191.000 189.761 -0.65 50.0 182.000 182.318 0.17 VCE=6V
  10. 10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 10 I1 2.5mA I2 50mA Q1 Q2SC2715Y VCE(Sat)-IC Characteristics Simulation result Evaluation circuit Test condition: IC/IB=20, IC=50mA Parameter Measurement Simulation %Error VCE(Sat) (V) 0.112 0.111 -0.89
  11. 11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 11 I1 2.5mA I2 50mA Q1 Q2SC2715Y VBE(Sat)-IC Characteristics Simulation result Evaluation circuit Test condition: IC/IB=20, IC=50mA Parameter Measurement Simulation %Error VBE(Sat) (V) 0.822 0.800 -2.68
  12. 12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 12 Switching Characteristics Test condition: VCC=12V, IC=16.67mA Parameter Measurement Simulation %Error tf (ns) 175.000 174.717 -0.16 Circuit Simulation Result Evaluation Circuit Comparison table
  13. 13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 13 Switching Characteristics Reference
  14. 14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 14 OutputCharacteristics Simulation result Evaluation circuit IB=50uA 100uA 150uA 200uA 250uA 350uA 300uA 400uA 450uA 500uA

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