Cd2SnO4 دراسة تأثير التلدين على الخواص التركيبية والبصرية لأغشية by: Thikra Abbas Mujbil Al- Hilfi, ذكرى عباس مجبل الحلفي Supervised By: prof. Sabria Alioui

2. Cd2SnO4

3. ABSTRACT

4. (CdO, Cd2SnO4)
(300 °C)(400,500)°C
((Cd(CH3COO)2.2H2O))((SnCl2.2H2O))
(XRD)
(Polycrystalline)(Cubic)(CdO)(201.6 Å)
(Cd2SnO4)(268.3 Å)(CdO)(G.s)
(δ)(d)(a)(Cd2SnO4)
(300-900)nm
(CdO)(60%)(900 nm)
(2.31 eV)
(Cd2SnO4)(72%)(900 nm)(3.1 eV)
(Cd2SnO4,CdO)

5. The Properties Of Thin Films

6. (Cadmium Oxide (CdO))
(n-Type)
(TCOʼs)
(Face Center Cubic (F.C.C.))
(CdO)

7. Cadmium Stannate (Cd2SnO4
(Cd2SnO42.06-3)eV
Cd2SnO4
n-type
Orthorhombic Structure.

8. Aim of Research
(CdO)
Cd(CH3COO)2.2H2O)
(5%)
(Cd2SnO4)(95%)
(5%)

9. Experimental Part

10. (Solution Preparation)
(1)(CdO)
Cd(CH3COO)2.2H2O)(266.52)gm/mol
0.1 mol/L2.6652 g100ml)
Magnetic Stirrer(15-20)min
M = (Wt / MWt). (100/V)
(2)(Cd2SnO4)
Cd(CH3COO)2.2H2O)
(SnCl2.2H2O)(225.63)gm/mol(5%)
(95%)(Cd:5%Sn)
(300)°C
COOHCHOHCdO 322 2OHOHCdCOOCH 222 2.)3(
HCLSnoCd 842OHOHSnClOHCdCOOCH 22222 2.2.)3(2

13. (CdO.Cd2SnO4)-
1-Substrate Temperature-
(300°C)
2-Vertical Distance-
(29.5 0.5cm)
3-Average Spryer-
(8 ml/min)
4-Average Time Spryer-
15secmin3
5-Air Pressure-
(105 N/m2)

14. measurements

16. SHIMADZU- 6000Type
Cu- KαTarget
1.54060Wave Length
40 kVVoltage
30 mACurrent
20o-60oRange of (2θ)
5 deg/ minSpeed
(2)
(X-Ray Diffraction Analysis)o
A
(3)
(The Optical Measurements)
AbsorbanceTransmittance
300–900nm)
UV/VIS–SPECROPHOTOMETER/1800BIOTECH

17. Results and Discussions

18. Structural Properties
(XRD)
(Cd2SnO4,CdO)
(Polycrystalline)
(Cubic)

19. (CdO)
(220),(200),(111)(111)
(c),(b)

20. (5%)
(300°C)
(CdO)(a)
(XRD)(2θ )
(400°C)
(131),(130),(001)
(b)(500 C)
(121)(c)
(Cd2SnO4)

22. 1-
(Interatomic Spacing (d)
(d)
2dsinθ = nλ
(d)(CdO)
(d)
(Cd2SnO4)
dÅ(Theory.)
dÅ
(Measured)
2θ(hkl)
Temperatu
re
T(°C)
Type of
thin film
2.717362.71735732.9353(111)300CdO
2.352462.352464538.2274(200)
1.662761.6627655.1961(220)
2.709562.70955933.0328(111)400
2.346472.34647438.3288(200)
1.659311.659312455.3206(220)
2.709722.70971933.0308(111)500
2.347492.34748838.3115(200)
1.661491.661487155.242(220)
2.726752.72672632.8186(111)300Cd:5%Sn
2.361182.36143538.0808(200)
1.669181.66912254.9659(220)
3.302393.30175726.9776(001)400
Cd2SnO4
2.867022.86702131.171(130)
2.088742.24460643.2817(131)
3.307283.30728626.937(001)500
2.868412.86845331.1555(130)
2.400792.40078837.429(121)
2.093492.09348543.1786(131)

23. 2-(Lattice Constant (a))
(a)(ASTM)
1/d2 = (h2+k2+l2)/a2
(CdO)(4.7066Å)(Cd2SnO4)
(9.0663Å)
aÅ (Measured)(hkl)
Temperature
T(°C)
Type of thin
film
4.706601(111)300CdO
4.693094(111)400
4.693371(111)500
4.722827(111)300Cd:5%Sn
9.066316(130)400Cd2SnO4
9.070844(130)500

24. 3-(Grain Size (G.s))
(G.s)
(CdO)
(Cd2SnO4)
G.s Å
β(FWHM)
(deg.)
2θ(hkl)
Temperature
T(°C)
Type of thin
film
201.6460.456732.9353(111)300CdO
225.00120.464633.0328(111)400
228.80030.402633.0308(111)500
149.50380.615832.8186(111)300Cd:5%Sn
268.32260.341731.171(130)400Cd2SnO4
224.10760.409131.1555(130)500
cos
kG.s

25. Some Structural Parameters
Calculation

26. Tc(hkl)
Temperature
T(°C)
Type of thin
film
2.0979(111)300CdO
0.6084(200)
0.29371(220)
1.6854(111)400
1.0787(200)
0.23596(220)
1.3889(111)500
0.9583(200)
0.652778(220)
1.37615(111)300Cd:5%Sn
1.12844(200)
0.49541(220)
0.9913(001)400
Cd2SnO4
1.3044(130)
0.704(131)
0.8657(001)500
1.19403(130)
1.10448(121)
0.83582(131)

27. 2-(Dislocation Density ( ))
δ = 1/ (G.s) 2
(CdO)
( )
(Cd2SnO4)
×10-5
Line/Å2
Temperature
T(°C)
Type of thin
film
2.4564300CdO
1.9751400
1.91024500
4.474300Cd:5%Sn
1.38895400Cd2SnO4
1.99107500

28. 3-(Number of Crystals (M)
M=t/ (G.s) 3
(CdO)
(Cd2SnO4)
4-Number of Layers (NL)
NL=t/G.s
(CdO)(Cd2SnO4)
NLM/Å2
Temperature
T(°C)
Type of
thin film
9.91840.00024300CdO
8.8890.0001756400
8.741250.00017500
13.377590.000599300Cd:5%Sn
7.4537130.000104400Cd2SnO4
8.9242840.000178500

29. 5-Integral Breadth (∆))
(XRD)
∆=Area/Imax
(∆)(β)
(Δ)
β
Shape
Factor (Φ)
Integral
Breadth
(∆)(deg.)
β(FWHM)
(deg.)
Temperature
T(°C)
Type of thin
film
0.91340.50.4567300CdO
0.84470.550.4646400
1.17980.4750.4026500
0.87970.70.6158300Cd:5%Sn
0.91120.3750.3417400Cd2SnO4
0.90910.450.4091500
6-Shape Factor (Φ))
Φ= β/∆

30. Optical Properties
(Cd2SnO4,CdO)

31. Transition (T %)
(300-900)nm
(a)
(CdO)(300°C)
(300nm)
(900nm)
(60%)
(c),(b)

32. (88%)(900)nm
(a)
(b)
Transmittance(T%)
Wavelength λ(nm)
(a)(Cd2SnO4)(72%)(900)nm
(70%)(500)°C(b)(Cd2SnO4)

33. Absorption (A)
(a)
(900nm)
(c),(b)

34. (Cd2SnO4)
(b,a)

35. (α)
(α > 104 cm-1)
(a)
(CdO)(CdO)
(c),(b)

36. (Cd2SnO4)
(b),(a)
(300)°C

37. (Cd2SnO4, CdO)
-
(αhf)2 = B2 ( hf – Eg )
(a)
(CdO)
(2.31)eV
bc

38. (a)
(b)
(c)
(a)
(3.3) eV
(b),(c)
(Cd2SnO4)

39. Reflection Measurement(R)
R +T+A=1
(a)
(CdO)
(c),(b)

40. (Cd2SnO4)
(b),(a)

41. Extinction Coefficient Measurement
(Kₒ)
(CdO)
Kₒ= αλ/4π
(a)
(CdO)
(c),(b)

42. (b),(a)(Cd2SnO4)

43. Refractive Index Measurement
(nₒ)
n={(1+R)2 / (1-R)2- (Ko
2+1)}1/2+(1+R) / (1-R)
(a)(CdO)
(c),(b)

44. (b),(a)(Cd2SnO4)

45. Dielectric Constant Measurement (ξ)
ξ1
ξ2
ξ1 = no
2- ko
2
ξ2 = 2 no ko

46. (Real
Part of Dielectric Constant (ξ1))
(a)
(1.38-2.2) eV
(2.2) eV
(CdO)
(c),(b)

47. (c),(b)

48. Imaginary Part of Dielectric
Constant (ξ2)
(a)
(1.38-2.4)eV
(CdO)
(c),(b)

49. (Cd2SnO4)
(b),(a)

51. Conclusion)
1-CdOCd:5%Sn300°C
Cd2SnO4500,400°C
2-
3-CdOCd2SnO4
4-(CdO)(7-60) %(300-900) nm
(8.5-80)%(300-900) nm
500°C
5-(22-88) %(300-900) nm
(15-70) %
(300-900) nm500°C
6-(CdO,Cd2SnO4) (α>104cm-1)

52. 7-CdO
,
8-Cd2SnO4
,
Future work
1-(CdO)CdxSnO1-x
2-CdxSnO1-x
3-Cd2SnO4, CdO
4-Cd2SnO4, CdO
5-Cd2SnO4