Graphene2016 Abstracts Book

Graphene2016 April 19-22, 2016 Genoa (Italy) 3
OREWORD
On behalf of the Organising and the International Scientific Committees we take great
pleasure in welcoming you to Genoa for the sixth edition of the Graphene and 2D Materials
International Conference & Exhibition.
Over the past 5 editions, the Graphene Conference strengthened its position as the main
meeting point of the Graphene community Worldwide.
Graphene2016 will feature:
 A plenary session with internationally renowned speakers
 An industrial forum focused on Graphene Commercialization
 Extensive thematic workshops in parallel
(Metrology, Characterization & Standardization, Health & Medical Applications,
Theory & Simulation, Production & Applications of graphene and related materials,
Energy and Worldwide Graphene Initiatives, Funding & Priorities)
 An important exhibition carried out with the latest Graphene trends
 A Brokerage event
Graphene2016 is now an established event, attracting global participants intent on sharing,
exchanging and exploring new avenues of graphene-related scientific and commercial
developments.
We are also indebted to the following Scientific Institutions, Companies and Government
Agencies for their help and/or financial support:
Phantoms Foundation, Go Foundation, AIXTRON, Thermo Scientific, Aldrich Materials
Science, Grafoid, Texas Instruments, Istituto Italiano di Tecnologia – Graphene Labs, Luigi
Bandera spa, GDRI: Graphene-Nanotubes, GALAPAD, Springer Verlag GmbH, APS Physics,
Materials Horizons journal, Cambridge University Press, Wiley, De Gruyter and Convention
Bureau Genova.
We also would like to thank all the exhibitors, speakers and participants that join us this year.
We truly hope that Graphene2016 serves as an international platform for communication
between science and business.
Hope to see you again in the next edition of Graphene2017 to be held in Barcelona (Spain).
Graphene2016 Organising Committee
F

NDEX
PAGE
5 COMMITTEES
7 SPONSORS
09 EXHIBITORS
12 SPEAKERS LIST
23 ABSTRACTS
323 POSTERS LIST
I

OMMITTEES
Organising Committee
Phantoms Foundation (Spain) Antonio Correia
Université Catholique de Louvain (Belgium) Jean-Christophe Charlier
ICREA/ICN2 (Spain) Stephan Roche
IIT, Graphene Labs (Italy) Francesco Bonaccorso
International Scientific Committee
National University of Singapore (Singapore) Antonio Castro Neto
IIT, Graphene Labs (Italy) Vittorio Pellegrini
University of Texas at Austin (USA) Deji Akinwande
University of Roma (Italy) Aldo Di Carlo
KAIST (Korea) Sung-Yool Choi
Texas Instruments (USA) Luigi Colombo
Technische Universität Dresden (Germany) Gianaurelio Cuniberti
CEMES (France) Erik Dujardin
Technische Universität Dresden (Germany) Xinliang Feng
Cambridge University (UK) Andrea Ferrari
ICMM-CSIC (Spain) Mar García Hernández
ICREA/ICN2 (Spain) Jose A. Garrido
DTU (Denmark) Antti-Pekka Jauho
University of Chalmers (Sweden) Jari Kinaret
SKKU (Korea) Young-Hee Lee
KAUST (Saudi Arabia) Lance Li
Peking University (China) Zhongfan Liu
CNR (Italy) Vittorio Morandi
SAMSUNG (Korea) Seongjun Park
Universidade Federal de Minas Gerais (Brazil) Marcos Pimenta
University of Trieste (Italy) Maurizio Prato
University of Trento (Italy) Nicola Pugno
JNCASR (India) C.N.R. Rao
Shenyang National laboratory (China) Wencai Ren
BASF (Germany) Matthias Schwab
CGIA (China) Simon Xiao
C

PONSORS
Diamond Sponsor
www.gofoundation.ca
Initiated in 2014, the GO Foundation is the world’s first private
technology foundation dedicated to accelerate the time to
commercialization of graphene-related technologies – on a globally
accessible basis – while serving as a permanent fixture at the center of
graphene innovation.
Platinum Sponsor
www.aixtron.com
AIXTRON is a leading provider of deposition equipment to R&D and the
semiconductor industry. The Company's technology solutions are used by a
diverse range of customers worldwide to build advanced components for
electronic and opto-electronic applications based on compound, silicon, or
organic semiconductor materials, as well as graphene, carbon nanotubes
(CNT) and other 2D/1D nanomaterials. Our equipment are used today to
manufacture high performance thin films for fiber optic communication
systems, wireless and mobile telephony applications, optical and electronic
storage devices, computing, displays, signaling and lighting.
Silver Sponsors
www.thermoscientific.com
www.sigmaaldrich.com
Lanyards Sponsor
www.grafoid.com
S

8 April 19-22, 2016 Genoa (Italy) Graphene2016
Other Sponsors
Awards Sponsors
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XHIBITORSE
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Graphene in Spain Pavilion
China Innovation Alliance of the Graphene Industry (CGIA) Pavilion
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Workshop 1 - Metrology, Characterization and Standardization
Workshop 2 - Health and medical Applications
Workshop 3 - Theory and Simulation
Workshop 4 - Production & Applications of graphene and related materials
Workshop 5 - Energy
Workshop 6 - Worldwide Graphene Iniciatives, Funding and Priorities
peakers
alphabetical order
PAGE
Rezal Khairi Ahmad (NanoMalaysia, Malaysia)
NanoMalaysia - National Graphene Action Plan 2020
Invited
Workshop6 24
Jong-Hyun Ahn (Yonsei University, Korea)
Graphene based wearable electronics
Invited
Workshop4 25
Adha Sukma Aji (Kyushu University, Japan)
All Two-Dimensional Transparent and Flexible Transistor based on WS2 and
Few-Layer Graphene
Oral
Parallel
PhD
26
Alberto Ansaldo (Istituto Italiano di Tecnoloiga, Italy)
High yield production of large size few layer 2D crystals dispersions by
wet-jet milling
Oral
Workshop4 29
Claudia Backes (University of Heidelberg, Germany)
Wet chemical functionalisation of transition metal dichalcogenides
Oral
Plenary 31
Adrian Balan (University of Pennsylvania, USA)
The effect of defects on the electrical and phonon properties of
graphene and MoS2
Oral
Plenary 33
Laura Ballerini (SISSA, Italy)
Graphene oxide nanosheets reshape synaptic function in cultured brain
networks
Oral
Workshop2 34
Ana Ballestar (Graphene Nanotech, GPNT, Spain)
Graphene grown on SiC substrates for applications in electronics
Oral
Industrial
Forum
35
Luis Baptista-Pires (ICN2, Spain)
Water Activated Graphene Oxide Transfer Using Wax Printed Membranes
for Fast Patterning of a Touch Sensitive Device
Oral
Parallel
PhD
37
Matteo Barbone (University of Cambridge, United Kingdom)
Electrically-driven quantum light emission in transition-metal
dichalcogenides
Oral
Parallel
PhD
38
Sagar Bhandari (Harvard University, USA)
Electron trajectories for magnetic focusing in graphene
Oral
Plenary 40
Gérard Bidan (UGA & CEA-Grenoble, France)
Si-grown vertically aligned graphene nanosheets electrodes for high
performance micro-supercapacitors using ionic liquid electrolytes
Oral
Workshop5 42
Miriam Boehmler (neaspec GmbH, Germany)
Improving graphene-based devices: New developments studied on the
nanoscale via nano-FTIR microscopy and spectroscopy
Oral
Workshop1 44
Peter Bøggild (Technical University of Denmark, Denmark)
Large-area electrical characterisation of graphene
Invited
Workshop1 46
Paolo Bondavalli (Thales, France)
Graphene based supercapacitors: results and perspectives
Invited
Industrial
Forum
48
Andres R. Botello Méndez (Université Catholique de Louvain, Belgium)
Atypical exciton-phonon interactions in WS2 andWSe2 monolayers: an
ab-initio study
Oral
Plenary 50
S

Workshop 5 - Energy
PAGE
Barry Brennan (National Physical Laboratory, United Kingdom)
Metrology for Graphene and 2-D Materials: Characterisation and
Standardisation for an Emerging Industry
Oral
Workshop1 51
Andrea Candini (Istituto Nanoscienze - CNR, Italy)
Ultra high photoresponsivity with field effect control in a graphene
nanoribbon device
Oral
Plenary 53
Francesco Carraro (University of Padua, Italy)
Fast One-Pot Synthesis of MoS2/Crumpled Graphene p–n Nanonjunctions
for Enhanced Photoelectrochemical Hydrogen Production
Oral
Parallel
PhD
55
Antonio H. Castro Neto (National University of Singapore, Singapore)
2D Materials: science and technology
Keynote
Workshop3 57
Pietro Cataldi (Italian Institute of Technology, Italy)
Foldable Conductive Cellulose Fiber Networks Modified by Graphene
Nanoplatelet-Bio-Based Composites
Oral
Parallel
PhD
58
Jiri Cervenka (Institute of Physics of the Czech Academy of Sciences,
Czech Republic)
DNA Detection Using Graphene Field-Effect Transistors
Oral
Workshop2 60
Gordon Chiu (Grafoid Inc., Canada)
Graphene Developments from Raw Graphite into Industrial Partnerships
Invited
Industrial
Forum
62
Seungmin Cho (Hanwha Techwin, Korea)
Fabrication of Large Area Graphene Films and Their Applications
Invited
Industrial
Forum
63
Hyoung Joon Choi (Yonsei University, Korea)
Massless Dirac fermions in potassium-doped few-layer black phosphorus
Invited
Workshop3 64
Hyunyong Choi (Yonsei University, Korea)
Ultrafast mid-infrared 1s intraexcitonic spectroscopy in monolayer MoS2
Oral
Plenary 65
Sung-Yool Choi (KAIST Graphene Research Center, Korea)
Graphene and 2D materials for future electronics and displays
Invited
Workshop6 67
Meganne Christian (CNR-IMM, Italy)
Size-controlled functional graphene foams for applications in energy storage
and piezoresistive sensing
Oral
Workshop5 68
Jonathan Coleman (Trinity College Dublin, Ireland)
Controlling the size of liquid exfoliated nanosheets and the impact of size
on applications potential
Invited
Plenary 70
Camilla Coletti (CNI@NEST, Istituto Italiano di Tecnologia, Italy)
Towards a scalable synthesis of van der Waals heterostructures: from
graphene on h-BN to WS2 on 2D substrates
Oral
Workshop4 71
Luigi Colombo (Texas Instruments, United States)
Two-Dimensional Materials Growth
Invited
Industrial
Forum
72
Joel D. Cox (ICFO-The Institute of Photonic Sciences, Spain)
Quantum effects in the nonlinear response of graphene plasmons
Oral
Plenary 73
Aron Cummings (Catalan Institute of Nanoscience and Nanotechnology
(ICN2), Spain)
Spin dynamics, dephasing, and relaxation in clean and disordered graphene
Oral
Workshop3 75
Gui-Ping Dai (Chilwee Group, China)
Triangle-Shaped Graphene Domains by LP-CVD and Update of Graphene
Application in Motive Power Battery
Invited
Industrial
Forum
77
Lun Dai (Peking University, China)
Origin of Improved Optical Quality of Monolayer Molybdenum Disulphide
Grown on Hexagonal Boron Nitride Substrate
Oral
Workshop1 79

Workshop 5 - Energy
PAGE
Anindya Das (Indian Institute of Science, India)
Tunabilityof 1/f Noise at Multiple Dirac Cones in hBN Encapsulated Graphene
Devices
Oral
Plenary 81
Antonio Esau Del Rio Castillo (Istituto Italiano di Tecnologia, Italy)
Exfoliation of Black-Phosphorus in low boiling point solvents and its
application in Li-ion batteries
Oral
Workshop5 82
Lucia Delogu (Università degli Studi di Sassari, Italy)
Graphene oxide lateral dimensions can mediate different molecular
response of human immune cells
Oral
Workshop2 84
Vito Di Noto (University of Padova, Italy)
Graphene-supported Fe, Co, Ni carbon nitride electrocatalysts for the ORR in
alkaline environment
Oral
Workshop5 87
Philippe Dollfus (CNRS, France)
Transport gap in vertical devices consisting of twisted graphene bilayers
Oral
Workshop3 89
Mildred S. Dresselhaus (Massachusetts Institute of Technology, USA)
The role of graphene in characterizing layered materials
Keynote
Plenary 91
Luc Duchesne (GO Foundation, Canada)
GO Foundation: the power of Private Public Partnerships
Oral
Industrial
Forum
-
Dmitri K. Efetov (Massachusetts Institute of Technology, USA)
Highly sensitive hBN/graphene hot electron bolometers with a Johnson
noise readout
Oral
Plenary 92
Jan Englert (WITec GmbH, Germany)
Multimodal Correlative Microscopy of 2D Materials
Oral
Workshop1 93
David Etayo (das-Nano, Spain)
ONYX Graphene and 2D Materials Inspector
Oral
Industrial
Forum
95
Norbert Fabricius (KIT, Germany)
Graphene Standardization in IEC and ISO
Invited
Workshop1 97
Vladimir Falko (Manchester University, United Kingdom)
Bright and dark excitons and trions in two-dimensional metal
dichalcogenides
Invited
Plenary 98
Xinliang Feng (TU Dresden, Germany)
Towards Synthetic Two-Dimensional Soft Materials
Invited
Workshop4 99
Andrea C. Ferrari (University of Cambridge, United Kingdom)
The Roadmap to Applications of Graphene, Layered Materials and
Hybrid Systems
Keynote
Plenary 100
Aires Ferreira (University of York, United Kingdom)
Towards all-electric spintronics in graphene Oral
Oral
Workshop3 101
Mikael Fogelström (Graphene Centre at Chalmers, Sweden)
The Graphene Flagship
Invited
Workshop6 102
Costas Galiotis (FORTH/ICE-HT, Greece)
Mechanics of Suspended and Supported Graphene
Invited
Plenary 103
Hong-Jun Gao (Chinese Academy of Sciences (CAS), China)
Construction of Novel 2D Atomic Crystals on Transition Metal Surfaces
and Physical Properties: Graphene, Silicene, Germanene, Hafnene, PtSe2
and HfTen
Invited
Plenary 105
Khasha Ghaffarzadeh (IDTechEx, United Kingdom)
Graphene 2016-2026: Markets, Technologies and Players
Invited
Industrial
Forum
107
Feliciano Giustino (University of Oxford, United Kingdom)
When graphene meets perovskites
Invited
Workshop5 109

Workshop 5 - Energy
PAGE
Yury Gogotsi (Drexel University, USA)
Two-Dimensional Carbides (MXenes): Synthesis, Properties and
Applications
Invited
Plenary 111
José M. Gomez-Rodriguez (Universidad Autónoma de Madrid, Spain)
Controlling atomic scale magnetism on graphene using hydrogen atoms
Oral
Plenary 112
Luis Gonzalez Souto (CDTI, Spain) / Antonio Correia (Phantoms
Foundation, Spain
EUREKA Graphene Cluster
Oral
Industrial
Forum
-
Stijn Goossens (The Institute of Photonic Sciences, Spain)
High performance graphene flexible and transparent sensor platform
with application in health sensing
Oral
Workshop2 113
Louis Gorintin (ENGIE, France)
Graphene, an incredible innovation opportunity for a fast transformation
of the energy industry
Invited
Industrial
Forum
115
Carlo Grazianetti (Laboratorio MDM, IMM-CNR, Italy)
Mono and Multilayer Silicene Filed-Effect Transistors
Oral
Workshop4 116
Michael Grätzel (EPFL, Switzerland)
Graphene boosts performance of perovskite photovolatics.
Keynote
Plenary 118
Søren Gregersen (DTU, Denmark)
Graphene with triangular perforations
Oral
Parallel
PhD
119
Gloria Guidetti (University of Bologna, Italy)
New synthesis and applications of graphene based photocatalytic
nanocomposites for Healthier Cities
Oral
Parallel
PhD
121
Jun-han Han (Electronics and Telecommunications Research Institute
(ETRI), Korea)
Organic Light-Emitting Diode Display Panel Integration Using Graphene
Pixel Electrodes
Oral
Industrial
Forum
123
Ling Hao (National Physical laboratory, United Kingdom)
Non-invasive Microwave Method for Extended Electrical Measurements
on Graphene
Oral
Workshop1 126
Masataka Hasegawa (AIST, Japan)
Development of graphene and related materials in TASC and AIST
Invited
Workshop6 129
Tony F. Heinz (Stanford University, USA)
Optical properties of atomically thin semiconductors layers and
heterostructures
Keynote
Plenary 131
Dake Hu (Tsinghua University, China)
Vapor Phase Growth of High Quality Monolayer MoS2 at Low
Temperature
Oral
Parallel
PhD
132
Yoshihiro Iwasa (University of Tokyo, Japan)
Valley Physics in Transition Metal Dichalcogenide 2D crystals
Invited
Plenary 134
Mohammad Mehdi Jadidi (University of Maryland, USA)
Nonlinear Terahertz Response of Graphene Plasmons
Oral
Plenary 135
Byung Chul Jang (KAIST, Korea)
Interface engineering by inserting multilayer graphene barrier electrode
for low power and highly uniform polymer nonvolatile memory
Oral
Parallel
PhD
137
Houk Jang (Yonsei University, Korea)
Conformal Triboelectric Nanogenerator with Graphene Electrode and
Their Applications in Wearable electronics
Oral
Industrial
Forum
138
Ado Jorio (UFMG, Brazil)
Metrology of defects and local temperature in graphene
Invited
Plenary 140

Workshop 5 - Energy
PAGE
Kristen Kaasbjerg (Technical University of Denmark, Denmark)
Coulomb drag in graphene-based quantum-dot heterostructures
Oral
Workshop3 141
Sathukarn Kabcum (Chiang Mai University, Thailand)
Highly Sensitive NO2 Gas Sensors Based on Electrolytically Exfoliated
Graphene/Au-catalyzed WO3 Composite Films
Oral
Workshop2 143
Martin Kalbac (UFCH JH, Czech Republic)
Quantification of Defects in Bilayer Graphene by Raman spectroscopy
Oral
Workshop1 145
Kibum Kang (Cornell University, United States)
Atomically Thin Semiconducting Paper
Invited
Workshop4 146
Panagiotis Karagiannidis (University of Cambridge, United Kingdom)
Microfluidization of graphite and formulation of graphene-based
conductive inks
Oral
Workshop4 147
Kenry (National University of Singapore, Singapore)
Highly Flexible Graphene Oxide Nanosuspension Microfluidic Tactile
Sensor
Oral
Parallel
PhD
149
Sandeep Keshavan (Istituto Italiano di Tecnologia, Italy)
An electrophysiological approach to understand the neural interface on
micro patterned graphene
Oral
Workshop2 150
Frank Koppens (ICREA/ICFO, Spain)
Photons, Plasmons and Electrons meet in 2d materials
Invited
Plenary 152
Tilmar Kümmell (Universität Duisburg-Essen, Werkstoffe der Elektrotechnik
and CENIDE, Germany)
Control of WS2 emission properties in 2D-3D semiconductor
heterojunctions by band alignment
Oral
Workshop1 154
Laura Lancelotti (ENEA, Portici Research Center, Italy)
Graphene/Silicon Schottky barrier solar cells
Oral
Workshop5 156
Gun-Do Lee (Seoul National University, Korea)
Defects in Two Dimensional Materials: Cooperative Study of HR-TEM and
Simulation
Oral
Plenary 158
Joung-Hoon Lee (STANDARD GRAPHENE Co.,Ltd., Korea)
Graphene Roadmap of Korea and STANDARD GRAPHENE’s Products
Invited
Industrial
Forum
160
Leonid Levitov (Massachusetts Institute of Technology, USA)
Electron fluid in graphene: Energy Waves, Viscosity, Current Vortices and
Negative Nonlocal Resistance
Invited
Workshop3 161
Shiheng Liang (Institut Jean Lamour, France)
Spin transport in molybdenum disulfide multilayer channel
Oral
Plenary 162
Elefterios Lidorikis (University of Ioannina, Greece)
Modelling of graphene-based sensing devices
Oral
Plenary 164
Chwee Teck Lim (National University of Singapore, Singapore)
Graphene and graphene oxide for biomedical applications: From stem
cell manipulation to antimicrobial applications
Invited
Workshop2 166
Xiaochi Liu (SKKU Advanced Institute of Nano Technology, Korea)
High performance p-type MoS2 transistor enabled by chemical doping
Oral
Parallel
PhD
168
Zhongfan Liu (Peking University, China)
2-D Nanocarbons: Attraction, Reality and Future
Keynote
Plenary 169
Tsachi Livneh (NRCN, Israel)
Resonant multiphonon Raman scattering in MoS2 up to the fifth order
Oral
Workshop1 170
Juan Pablo Llinas (University of California at Berkeley, USA)
Field Effect Transistors with Atomically Precise Graphene Nanoribbons
Oral
Parallel
PhD
172

Workshop 5 - Energy
PAGE
Annick Loiseau (LEM, ONERA - CNRS, France)
Probing spectroscopic properties of BN and black phosphorus layers
Invited
Plenary 175
Martin Lottner (Technische Universität München, Germany)
Flexible Graphene Transistors for Bioelectronics
Oral
Workshop2 177
Steven G. Louie (University of California at Berkeley, USA)
Novel Electronic and Optical Phenomena in Atomically Thin Quasi-2D
Materials
Keynote
Plenary 179
Richard Martel (Université de Montréal, Canada)
Exfoliated Black Phosphorus: Raman Analysis and Degradation Process in
Ambient Conditions
Invited
Plenary 180
Miriam Marchena (ICFO - Institut de Ciencies Fotoniques, Spain)
Direct growth of patterned graphene on dielectric and flexible substrates
catalyzed by a sacrificial ultrathin Ni film
Oral
Workshop4 182
Kazuhiko Matsumoto (Osaka University, Japan)
Selective Detection of Human & Bird Influenza Virus by Sugar Chain
Modified Graphene FET
Oral
Workshop2 184
Ronan McHale (Thomas Swan & Co. Ltd., United Kingdom)
Commercialising CNTs, Graphene and other 2D Nanomaterials: From the
Academic Lab to the Marketplace
Oral
Industrial
Forum
186
Cécilia Ménard-Moyon (CNRS, France)
Biomedical applications of graphene: from functionalisation to
biodistribution and biodegradation
Invited
Workshop2 188
Arben Merkoçi (ICREA/ICN2, Spain)
Graphene biosensors in diagnostics
Invited
Workshop2 190
Vincent Meunier (Rensselaer Polytechnic Institute, USA)
Low-frequency modes, twisting- and defect-induced shifts in Raman
modes in MoS2, MoSe2, and phosphorene
Invited
Workshop3 192
Jannik Meyer (University of Vienna, Austria)
Fabrication and analysis of defective, amorphous, deformed, strained,
functionalized and stacked 2D materials via high-resolution electron and
scanned probe microscopies
Invited
Workshop1 194
Martin Mittendorff (University of Maryland, USA)
Room Temperature THz Detection with Thin Layers of Black Phosphorus
Oral
Workshop4 195
Elisa Molinari (University of Modena e Reggio Emilia, Italy)
Many-body interactions and optical excitations in graphene
nanostructures
Invited
Workshop3 197
Nunzio Motta (Queensland University of Technology, Australia)
All-carbon Solid State Supercapacitors Based on Graphene
Oral
Workshop5 199
Roberto Muñoz Gómez (Instituto de Ciencia de Materiales-CSIC, Spain)
Direct Growth of Graphene on Transparet Insulators: Quartz & Silica
Oral
Parallel
PhD
201
SungWoo Nam (University of Illinois, USA)
Three-dimensional, Corrugated Graphene Micro-/Nano-Structures for
Advanced Sensor Devices
Invited
Workshop2 203
Akimitsu Narita (Max Planck Institute for Polymer Research, Germany)
Bottom-Up Solution Synthesis of Graphene Nanoribbons with Tailored Widths and
Edge Structures
Oral
Workshop4 204
Cengiz Ozkan (University of California, USA)
Graphene Materials for Advanced Energy Storage
Oral
Plenary 206

Workshop 5 - Energy
PAGE
Tomás Palacios (Massachusetts Institute of Technology, USA)
System-Level Applications of Two-Dimensional Materials: Challenges and
Opportunities
Invited
Plenary 208
Vincenzo Palermo (ISOF-CNR, Italy)
Scale-dependent fragmentation mechanism of two-dimensional
materials
Invited
Workshop4 210
Alessandro L. Palma (CHOSE, University of Rome, Italy)
Graphene-based large area dye-sensitized solar cell module
Oral
Parallel
PhD
212
Maria Pantano (University of Trento, Italy)
Tensile tests on single graphene layers
Oral
Plenary 214
Ioannis Paradisanos (Foundation for Research and Technology-Hellas /
Institute of Electronic Structure and Laser, Greece)
Spatial Nonuniformity of WS2 Monolayers
Oral
Parallel
PhD
215
Jang-Ung Park (UNIST, Korea)
Wearable Electronics Using Graphene Hybrid Nanostructures
Oral
Plenary 217
Minhoon Park Park (Yonsei University, Korea)
Conformal and transparent Graphene 3-axis Sensor for artificial skin
Oral
Parallel
PhD
218
Seongjun Park (Samsung Advanced Institute of Technology, Korea)
2-Dimensional Layered Materials for Si Technology
Invited
Industrial
Forum
220
John Parthenios (FORTH, Greece)
A graphene touch panel display: The mechanical effect
Oral
Workshop1 221
Alessandro Pecchia (CNR-ISMN, Italy)
Strain engineering of thermal transport in two-dimensional grain
boundaries
Oral
Workshop3 223
Hailin Peng (Peking University, China)
New two-dimensional crystals: controlled synthesis and optoelectronic
devices
Oral
Workshop4 225
Alain Pénicaud (Université de Bordeaux - CNRS - CRPP, France)
Additive Free, Single Layer Graphene in Water
Oral
Plenary 226
Javier Pérez (AVANZARE, Spain)
Graphene materials for energy and composites applications
Oral
Industrial
Forum
227
Marcos Pimenta (Universidade Federal de Minas Gerais, Brazil)
Resonance Raman spectroscopy in novel 2D structures
Invited
Workshop1 229
Eva A. A. Pogna (Politecnico di Milano, Italy)
Non equilibrium optical properties of monolayer MoS2 probed by ultrafast
spectroscopy
Oral
Plenary 230
Wilfrid Poirier (Laboratoire National de métrologie et d'Essais, France)
A convenient quantum Hall resistance standard in graphene devices:
performance and physics
Oral
Workshop1 232
Marco Polini (IIT, Graphene Labs, Italy)
Current-driven non-reciprocal plasmons in graphene
Invited
Plenary 234
Elena Polyakova (Graphene 3D Lab, USA)
Next Generation of Nano-Enhanced Composites and 3D Printable
Materials
Invited
Industrial
Forum
235
Si Qin (Deakin University, Australia)
N-doped Mesoporous Molybdenum Disulfide Nanosheets: Synthesis and
Application in Lithium Ion Batteries
Oral
Workshop5 236
Sebastiano Ravesi (STMicroelectronics, Italy)
Fabrication of Smart Systems on Flexible Substrates Enabled by Graphene
Integration
Invited
Industrial
Forum
237

Workshop 5 - Energy
PAGE
Wencai Ren (IMR-CAS, China)
From Graphene to 2D Transition Metal Carbides: Synthesis and
Applications
Invited
Plenary 238
Venkatesan Renugopalakrishnan (Harvard Medical School
and Northeastern University, USA)
Graphene Protein Microfluidic FET Sensors
Invited
Workshop2 240
Curt A. Richter (National Institute of Standards and Technology, USA)
Metrology for graphene, and graphene for metrology
Invited
Workshop1 241
Juha Riikonen (Aalto University, Finland)
Experimental and Theoretical Investigation of Highly Tunable Graphene-
GaSe Field-Effect Devices with Dual Heterojunction
Oral
Workshop4 243
Jonathan Roberts (Lancaster University, United Kingdom)
Two-dimensional Materials as Optically Unique Identifiers
Oral
Parallel
PhD
245
Joshua A. Robinson (The Pennsylvania State University, USA)
Growing Vertical in the Flatland
Invited
Workshop4 247
Aleksandr Rodin (National University of Singapore, Singapore)
Electronic Properties of Transition Metal Monochalcogenides
Oral
Workshop3 248
Daniel Rodrigo (École Polytechnique Fédérale de Lausanne, Switzerland)
Graphene as Enabling Material for Infrared Plasmonic Biosensors
Oral
Workshop2 249
Marco Romagnoli (CNIT, Italy)
Graphene Integrated Photonics for Next Generation Optical
Communications
Invited
Industrial
Forum
251
Paolo Samori (Université de Strasbourg & CNRS, France)
Supramolecular approaches to 2-D materials: from complex structures to
sophisticated functions
Invited
Plenary 253
Haofei Shi (Chinese Academy of Sciences, China)
Graphene Film Mass Production and Application in Distributed Flexible
Sensors
Invited
Industrial
Forum
255
Jing Shi (University of California, USA)
Proximity induced ferromagnetism and spin-orbit coupling in graphene
Invited
Plenary 257
Gwang Hyuk Shin (Korea Advanced Ins. of Science & Tech., Korea)
Multilevel resistive switching memory based on two dimensional materials
using simple solution process
Oral
Parallel
PhD
259
Marianna Sledzinska (ICN2, Spain)
Thermal and elastic properties of MoS2 nanosheets
Oral
Workshop1 260
Kristian Sommer Thygesen (DTU Physics, Denmark)
Ab-initio calculations and simple models of electronic excitations in 2D
materials and heterostructures
Invited
Workshop3 261
Justin Song (Institute of High Performance Computing, Singapore)
Chiral Plasmons Without Magnetic Field
Oral
Workshop3 263
Ajay Kumar Sood (Indian Institute of Science, India)
Photophysics of 2D Nanosystems: Raman and Ultrafast Pump-Probe
Spectroscopy
Invited
Plenary 264
Ajay Kumar Sood (Indian Institute of Science, India)
Overview of 2D Nanomaterials Research in India
Invited
Workshop6 266
Karthik Sridhara (Texas A&M University, USA)
Growth of CVD-graphene on thermally annealed and electropolished
Cu substrates
Oral
Parallel
PhD
267
Mateti Srikanth (Deakin Univeristy, Australia)
V2O5/graphene hybrid as superior cathode for lithium-ion batteries
Oral
Parallel
PhD
269

Workshop 5 - Energy
PAGE
Yury Stebunov (Moscow Institute of Physics and Technology, Russia)
Graphene oxide linking layers: a versatile platform for biosensing
Oral
Workshop2 270
Nathaniel Stern (Northwestern University, USA)
Optical Properties of Laterally-Confined Monolayer Semiconductors
Oral
Workshop1 272
Jia-Tao Sun (Institute of Physics, Chinese Academy of Sciences, China)
Gate Tunable Nonlinear Rashba spin splitting in transition metal
dichalcogenide monolayers
Oral
Workshop3 274
Nikodem Szpak (University Duisburg-Essen, Germany)
Current flow paths in deformed graphene: from quantum transport to
classical trajectories in curved space
Oral
Workshop3 275
Alexandr Talyzin (Umea University, Sweden)
High surface area graphene-related materials for hydrogen storage
Oral
Workshop5 277
Cheng Tang (Tsinghua University, China)
Hierarchical Porous Graphene: CVD Growth on Metal Oxides for High-
Rate Lithium-Sulfur battery and Superior Oxygen Evolution Electrocatalysis
Oral
Workshop5 280
Alexey Tarasov (BioMed X Innovation Center, Germany)
Field-effect transistors for rapid on-site disease diagnostics
Oral
Workshop2 283
Sergio O. Valenzuela (ICREA/ICN2, Spain)
Spin relaxation anisotropy in graphene
Invited
Plenary 285
Mutta Venkata Kamalakar (Uppsala University, Sweden)
Room temperature long distance spin transport in chemical vapor
deposited graphene
Oral
Plenary 286
Leonardo Vicarelli (Delft University of Technology, The Netherlands)
In-situ electrical measurements of Graphene Nanoribbons fabricated
through Scanning Transmission Electron Microscopy
Oral
Parallel
PhD
287
Miriam Vitiello (CNRNANO, Italy)
Terahertz Nano-detectors Exploiting Novel Two-Dimensional Materials
and Van der Waals Solids
Invited
Plenary 289
Thomas Weitz (LMU Munich, Germany)
Electrical Characteristics of Field-Effect Transistors based on Chemically
Synthesized Graphene Nanoribbons
Oral
Workshop1 291
Christian Wenger (IHP GmbH - Leibniz Institute for Innovative
Microelectronics, Germany)
Dielectric-Graphene and Silicon-Graphene integration for Graphene-
Based Devices
Oral
Workshop4 293
Dongmok Whang (SKKU, Korea)
Catalytic growth of 2D carbon monolayer with controlled crystallinity:
from amorphous to single-crystalline
Invited
Workshop4 296
Achim Woessner (ICFO - The Institute of Photonic Sciences, Spain)
Broadband electrical detection of propagating graphene plasmons
Oral
Plenary 297
Marcus Worsley (Lawrence Livermore National Laboratory, USA)
3D Printing of Ultra-Compressible, Highly Conductive Graphene Aerogels
Oral
Workshop4 299
Chong-Rong Wu (Academia Sinica, Taiwan)
The Growth Mechanisms and Device Applications of Large-area MoS2
Films Prepared by Sulfurization of Pre-deposited Molybdenum on
Sapphure Substrates
Oral
Parallel
PhD
301
Yu-Shu Wu (National Tsing-Hua University, Taiwan)
VOI-Based Valley Filter in Bilayer Graphene
Oral
Workshop3 303

Workshop 5 - Energy
PAGE
Xiaoyue Xiao (China Innovation Alliance of the Graphene Industry
(CGIA), China)
Initiative of Graphene Commercialization in China
Invited
Workshop6 305
Won Jong Yoo (Sunkyunkwan University, Korea)
Homo-junction tunneling transistors formed with chemically doped two-
dimensional materials
Invited
Workshop1 307
Shengjun Yuan (Radboud University, The Netherlands)
Mesoscopic Modeling of 2D Materials
Oral
Workshop3 308
Aliaksandr Zaretski (University of California, San Diego, USA)
Metallic nanoislands on graphene as highly sensitive transducers of
mechanical, biological, and optical signals
Oral
Parallel
PhD
311
Hua Zhang (Nanyang Technological University, Singapore)
Synthesis and Applications of Novel Two-Dimensional Nanomaterials
Invited
Workshop5 314
Jin Zhang (Peking University, China)
Lighting up the Raman Signal of Molecules in the Vicinity of Graphene
Related Materials
Invited
Plenary 315
Lijie Zhang (University of Twente, The Netherlands)
A two-dimensional Dirac material on a band gap substrate: Germanene
on MoS2
Oral
Parallel
PhD
316
Bingxin Zhao (Lab of Nanoscale Biosensing and Bioimaging, School of
Ophthalmology and Optometry, Wenzhou Medical University, China)
Nanocomposites from Polyethylene Glycol Modified Graphene and
Transferrin as Highly Targeted Antitumor Drug Carriers
Oral
Workshop2 318
Xiaodong Zhuang (Dresden University of Technology, Germany)
Graphene-Coupled Sandwich-like Porous Polymers for Energy Storage
and Conversion
Oral
Workshop5 319
Laura Zuccaro (Max Planck Institute for Solid State Research, Germany)
Graphene field-effect biosensors for real-time label-free binding kinetics
Oral
Workshop2 321
Krzysztof Zwolinski (Nano Carbon, Poland)
Semi-automated delamination of CVD-grown graphene in Your own lab
Invited
Industrial
Forum
322

NanoMalaysia - National Graphene Action Plan
2020
Rezal Khairi Ahmad
NanoMalaysia¸Malaysia
Graphene presents a unique opportunity for Malaysia to develop a high value economic
ecosystem within its industries in line with Malaysia’s aspiration to become a high-income
nation by 2020 with improved jobs and better outputs is driving the country’s shift away from
“business as usual,” and towards more innovative and high value add products. Currently,
Graphene is still early in its development cycle, affording Malaysian companies time to
develop their own applications instead of relying on international intellectual property and
licenses. Malaysia’s National Graphene Action Plan 2020 lays out a set of priority applications
that will be beneficial to the country as a whole and what the government will do to support
these efforts. Malaysia will focus its Graphene action plan initially on larger domestic
industries (e.g., rubber) and areas already being targeted by the government for innovation
such as energy storage for electric vehicles and conductive inks. In addition to benefiting
from the physical properties of Graphene, Malaysian downstream application providers may
also capture the benefits of a modest input cost advantage for the domestic production of
Graphene.
NanoMalaysia has been appointed as the Lead Agency to execute the National Graphene
Action Plan 2020, aligned with their mandate to nurture nanotechnology development and
its commercialization. At this juncture, timing is the key determinant in making sure Malaysian
companies has the first mover advantage to enable them to move up the value chain and
gaining access to the global market. To conduct a comprehensive analysis, a wide variety of
application areas for Graphene were considered. These applications were assessed for
technological feasibility by 2020, total size of the opportunity globally and relevance to
Malaysia. Based on these criteria, five applications were selected as initial priority focus areas
for Malaysia: lithium-ion battery anodes and ultracapacitors, rubber additives, nanofluids
(drilling fluids and lubricants), conductive inks, and plastic additives. Together, these
applications have the potential to contribute to achieving additional gross national income
impact of more than RM 20 billion and to help create 9,000 new jobs for these industries in
Malaysia by 2020.
Since the launch of National Graphene Action Plan 2020 in July 2014, there are 19
companies undertaking graphene product development projects and 2 scale-up or
manufacturing prospects in Malaysia.

Graphene based wearable electronics
Jong-Hyun Ahn
School of Electrical & Electronic Engineering, Yonsei University, Seoul, Korea
ahnj@yonsei.ac.kr
With the emergence of unusual format electronics such as flexible, stretchable and wearable
devices, an effort has been made to integrate devices with various functions for providing
enhanced convenience for the users. However, it is very difficult to accomplish such
electronics with conventional, rigid electronic materials. Graphene possesses an extremely
good mechanical property that should maintain a stable operation under a high strain,
offering great electronic properties that make it a promising host for device applications. The
recent advances in synthesis and fabrication technique of graphene films are expected to
enable various applications for flexible, stretchable and wearable electronics. In this talk, I
present the application possibility of graphene films for flexible, stretchable and wearable
electronics including sensor and energy harvesting devices.

All Two-Dimensional Transparent and Flexible
Transistor based on WS2 and Few-Layer
Graphene
Adha Sukma Aji1, Toshiaki Shiiba1, Kenjiro Fukuda2,3, Hiroki Ago1,3,4,*
1Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka,
Japan
2Thin-Film Device Laboratory, RIKEN, Saitama, Japan
3PRESTO-JST, Saitama, Japan
4Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, Japan
*ago@cm.kyushu-u.ac.jp
Two-dimensional materials, such as graphene and transition metal dichalcogenides (TMDCs),
have been attracting a great deal of interest in recent years [1]. Beside of high transparency
and flexibility, high carrier mobility of graphene and direct band gap of single-layer WS2
make them a good combination for future flexible and transparent opto-electronic device
[2,3]. In this work, we discuss the utilization of fewlayer graphene (FLG) and WS2 to realize all
2D material photodetector. The interesting part of this study is we found that the
photodetector is worked by only applying FLG as electrode without any metal electrode on
the device. Flexible and transparent parylene with 1 µm thickness was used as substrate and
polymer dielectric insulator as well [4]. Moreover, parylene is extremely flexible so it wraps
human skin easily as shown in Figure 1a. Additionally, Figure 1b shows an example of a
transparent device on glass substrate.
FLG was chosen as electrode and backgate because of its lower sheet resistance
compared to singlelayer graphene. FLG and WS2 were grown by using chemical vapor
deposition (CVD) method. By using Cu-Ni foil, 10-12 nm thick of FLG was synthesized with CH4
as carbon feedstock at 1050-1070 ºC. Moreover, large area single-layer WS2 was grown on c-
plane sapphire at 950 ºC by evaporating WO3 powder and elemental sulfur precursor at
1070-1080 ºC and 165-170 ºC, respectively. FLG electrodes were patterned and etched by
employing standard photolithography and O2 etching process. After that, large-area WS2,
FLG electrode, and FLG backgate were transferred onto parylene with polystyrene support.
Finally, polystyrene was stripped away by toluene bath several times.
The schematic view of our device is shown in Figure 1c. The sheet resistance of FLG is was 100
Ω/□ measured by van der Pauw method. Figures 2a and 2b represent the device
performance in dark environment. The Id-Vg measurement shows field-effect mobility as high
as 2 cm2 /Vs with 104 on/off ratio. Moreover, as shown in Figure 2b, the Id-Vd characteristic
implies ohmic-like contact as a result of clean interface between FLG electrode and WS2
channel. Figures 3a and 3b show the device performance under visible light (532 nm). The
negatively shifted charge neutrality point under illumination suggests that the generated
current is mostly accumulated from photogating effect [5]. Figure 3b plots photoresponsitivity
as a function of FLG backgate applied voltage. The photoresponsitivity reached 70 µA/W at
Vg = 30 V. Iilluminated/Idark ratio of the device was around 15 when illuminated with 6.5 mW/cm2
light. From the photoresponsitivity result, external and internal quantum efficiency (EQE and

IQE) value are extracted. We found that the EQE value is only around 0.12% under
illumination. Such small EQE value is expected since single-layer WS2 is transparent and pass
through most of the light. On the other hand, IQE value reached 9% from single-layer WS2. IQE
value represent the number of charge per absorbed photons. Hence, single-layer WS2 can
generate a large number of charges even though it has high transparency.
The usage of metal-free FLG electrode, good photodetection ability of single-layer WS2, and
flexible parylene is expected to open new insight into novel 2D materials-based wearable
opto-electronic devices.
References
[1] A. K. Geim, Science, 324 (2009) 1530.
[2] A. K. Geim and I. V. Grigorieva, Nature, 499 (2013) 419.
[3] M. A. Bissett, M. Tsuji, and H. Ago, Phys. Chem. Chem. Phys., 16 (2014) 11124.
[4] K. Fukuda et. al., Nat. Commun., 5 (2014) 4417.
[5] M. Buschema et. al., Chem. Soc. Rev., 44 (2015) 3691.
Figures
Figure 1: (a) Photograph of the 2D material device on human skin. (b) Photograph the transparent
device with parylene substrate supported by glass. (c) Schematic view of the device.
Figure 2: (a) Id-Vg and (b) Id-Vg characteristics of the device in dark.

Figure 3: (a) Id-Vg curve and (b) photoresponsitivity of the device under light illumination.

High yield production of large size few layer 2D
crystals dispersions by wet-jet milling
Alberto Ansaldo, Antonio Esau Del Rio Castillo, Filiberto Ricciardella, Silvia Gentiluomo,
Vittorio Pellegrini, and Francesco Bonaccorso
Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, Genova, Italy
alberto.ansaldo@iit.it
Efficient and scalable two-dimensional (2D) crystals production methods are urgently
needed for a rapid clearing of technological hurdles towards the development of a 2D
crystals-based industry, satisfying the specific needs of different application areas. Although
many approaches have been demonstrated and developed [1,2], the most promising
methods for large scale production of 2D crystals rely on liquid phase exfoliation (LPE) of bulk
layered crystals [3,4,5]. Currently, the LPE is largely based on ultrasonication, a time
consuming process [5] which is emerging as the main limitation of this method. Recently, new
approaches for the full exploitation of LPE of layered crystals have been proposed, with the
aim to improve the ease of production and scalability [6].
Here we propose high pressure wet-jet milling (hp-WJM, Fig. a) as a novel approach for the
exfoliation of layered crystals by LPE. This technique allows us to produce bulk quantities of 2D
flakes in dispersion (Fig. b). For example, by exploiting hp-WJM we scaled the production of
few-layer graphene (FLG) flakes in dispersion up to over 2 L/h, with a concentration higher
than 10 g/L. This dispersion is characterized by large lateral size FLG flakes (Fig. c) with low
defects concentration (Raman peak intensity ratio ID/IG ≈ 0.5, Fig. d). The as-produced flakes
are already suitable for many industrial applications such as polymer composites. A further
processing step, i.e. purification by ultracentrifugation [7], allows the selection of the highest
quality flakes, maintaining a still high concentration, i.e.,~1.1 g/L (ID/IG ≈ 0.47, g-force ~500 g).
The same method has been successfully applied to other layered crystals (e.g., BN, MoS2,
WS2, WSe2, Bi2Te3, just to cite a few). Our latest results on the production and processing of 2D
crystals as well as their applications in Li batteries, composites, flexible conductors will be
presented.
References
[1] F. Bonaccorso, et al., Materials Today, 15 (2012) 564.
[2] A. C. Ferrari, et al., Nanoscale, 7 (2015) 4598.
[3] V. Nicolosi, et al., Science, 340 (2013) 1226419.
[4] F. Bonaccorso, et al, Advanced Materials (2016), in press
[5] Y. Hernandez, et al., Nature Nanotechnology, 3 (2008) 563.
[6] K. R. Paton, et al., Nature Materials, 13 (2014) 624
[7] F. Bonaccorso, et al., J. Phys. Chem C, 114 (2010) 17267.

Figures
Figure 1: a) Scheme of the hp-WJM process, b) 2D crystal dispersions produced by hp-WJM; c) TEM
image of micron size exfoliated FLG flakes; d) Raman spectra of FLG (red) and starting graphite
(black).

Wet chemical functionalisation of transition
metal dichalcogenides
Claudia Backes, Andreas Hirsch, Aidan McDonald, Jonathan N. Coleman
Applied Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, 69120
Heidelberg, Germany
Backes@uni-heidelberg.de
Over the last few years the study of 2-dimensional (2D) nanomaterials has become one of
the most important areas of both materials science and nanotechnology. While this work
originally focused on graphene, the palette of 2D materials currently under study includes
transition metal dichalcogenides (TMDs) such as MoS2 and WSe2, layered transition metal
oxides and a host of other interesting structures. Particularly useful is the diversity of 2D
materials: depending on the combination of elements and their arrangement, they can be
metals, semi-conductors, insulators or superconductors. They display a range of interesting
properties from thickness-dependent bandgaps to catalytic activity to the ability to act as
drug delivery vehicles. These properties make them useful for both fundamental studies and
applications in areas as diverse as optoelectronics, electrochemistry and medicine.
However, to tap their full potential and to combine their diverse and unique properties with
those of other substance classes, methods to functionalise layered materials are sought for.
Here we present three methods to chemically functionalise the MoS2 basal planes by i)
noncovalent functionalisation, ii) coordination chemistry and iii) reductive covalent
functionalisation.
Noncovalent functionalisation is probably the easiest way to modify surface properties of
nanomaterials in liquids. As we showed using liquid exfoliated WS2 in poly vinyl alcohol as
model system,[1] noncovalent functionalisation also offers exciting possibilities to change the
doping level in the TMD. In addition, the bulky stabiliser shields the exfoliated nanosheets from
restacking in thin films so that monolayer properties are widely maintained. These composites
offer exciting perspectives both for fundamental studies and applications.
The coordination chemistry approach [2] relies on anchoring transition metal cations such as
Cu2+ or Ni2+ to the sulphur atoms of the dichalcogenide surface after liquid-phase exfoliation
of the nanomaterial by established techniques. Ligands in the periphery of the transition
metal cations can be replaced potentially providing a diversity of functional entities.
Critically, X-ray photoelectron spectroscopy reveals that up to 50% of the S atoms can be
functionalised (maximum loading).
In addition, we show the covalent reductive functionalization of MoS2. [3] The MoS2 basal
planes can be functionalised in analogy to graphene. The reaction sequence is based on
intercalation of the material by n-butyl lithium to yield negatively charged MoS2 nanosheets
that are exfoliated down to monolayers in water. The negative charges can subsequently be
quenched by the addition of a diazonium salt to obtain covalently functionalised MoS2. In
contrast to graphene, the reaction can be carried out in water under ambient conditions
after the initial intercalation step.

We expect these approaches to be applicable to other transition metal dichalcogenides
giving access to a broad palette of new functional materials with modified surface
properties, improved processability and yet unknown properties. Most importantly, we
believe that these materials can be used as building blocks in composites and hybrid
structures by further derivatisation.
References
[1] Vega-Mayoral, V.; Backes, C.; Hanlon, D.; Khan, U.; Gholamvand, Z.; O'Brien, M.;
Duesberg, G. S.; Gadermaier, C.; Coleman, J. N., Adv. Func. Mater. 2016, DOI:
10.1002/adfm.201503863.
[2] Backes, C.; Berner, N. C.; Chen, X.; Lafargue, P.; LaPlace, P.; Freeley, M.; Duesberg, G.
S.; Coleman, J. N.; McDonald, A. R., Angew. Chem., Int. Ed. 2015, 54 (9), 2638-2642.
[3] Knirsch, K. C.; Berner, N. C.; Nerl, H. C.; Cucinotta, C. S.; Gholamvand, Z.; McEvoy, N.;
Wang, Z.; Abramovic, I.; Vecera, P.; Halik, M.; Sanvito, S.; Duesberg, G. S.; Nicolosi, V.;
Hauke, F.; Hirsch, A.; Coleman, J. N.; Backes, C. ACS Nano 2015, 9 (6), 6018–6030.

The effect of defects on the electrical and
phonon properties of graphene and MoS2
Adrian Balan1,3, Liangbo Liang2, William Parkin1, Michael Lamparski2, Paul Masih Das1, Carl H.
Naylor1, Julio A. Rodriguez-Manzo1, Matthew Puster1, A.T. Charlie Johnson, Jr.1, Vincent
Meunier2, Marija Drndić1
1Department of Physics and Astronomy, University of Pennsylvania, Philadelphia,
Pennsylvania 19104, USA
2Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute,
Troy, New York 12180, USA
3 CEA Saclay, LICSEN, France
adrian.balan@gmail.com
We present a comprehensive study of the effects of the defects produced by electron
irradiation on the electrical and crystalline properties of graphene and MoS2 monolayers. We
realized electrical devices from monolayer MoS2 or graphene crystals suspended on a 50nm
SiNx membrane. The samples are exposed to electron irradiation inside a 200kV transmission
electron microscope (TEM) and we perform in situ conductance measurements [1] and
subsequently ex-situ Raman cartography. We correlate the damage to the crystalline lattice
- measured by diffraction - with the observed decrease in the two-terminal conductivity of
the devices and the variation in the Raman phonon modes. The change in the diffraction
pattern is fitted to a kinematic model. The variation of the phonon modes is fitted to DFT
simulations. The evolution of the conductivity with the defect concentration is approached in
the percolation theory framework, using a resistance network model.
References
[1] M. Puster, J. A. Rodriguez- Manzo, A. Balan, M. Drndic., ACS Nano, 7 (2013), pp 11283–
11289.
Figures
Figure 1: a) Schematic representation of the monolayers exposed to the electron beam. b) Increase
of graphene resistance during electron irradiation c) Increase of MoS2 resistance during electron
irradiation.

Graphene oxide nanosheets reshape synaptic
function in cultured brain networks
Laura Ballerini, Rossana Rauti, Neus Lozano, Denis Scaini, Mattia Musto, Ester Vázquez,
Kostas Kostarelos, Maurizio Prato
School for Advanced Studies (SISSA) via Bonomea 265 I-34136 Trieste, Italy
laura.ballerini@sissa.it
Graphene is a highly advanced metamaterial at the forefront of revolutionary applications in
neurological diseases. Biomedical developments in general, and in neurology in particular,
are focusing on few-layer graphene sheets to manufacture novel bio-devices, including
biosensors, interfaces, tissue scaffolds, drug delivery and gene therapy vector systems. In this
context, exploration of the interactions between graphene nano- and micro-sheets with the
sophisticated signaling machinery of nerve cells is of great importance.
Here we explore for the first time by patch clamp and fluorescence imaging the ability of
graphene (GR) and graphene oxide (GO) nanosheets to interfere with synaptic signaling
once hippocampal cultured neurons are exposed for one week to a growth medium
containing thin sheets of such materials at 1 or 10 µg/mL. We further investigated whether, in
the absence of explicit cell toxicity, such materials affected the ability of astrocytes to
release synaptic-like microvesicles (MV) in pure glial cultures. Our results describe the
potential of GO nanosheets to alter different modes of inter-neuronal communication
systems in the CNS hinting at opportunities for novel neuromodulatory applications or
highlighting subtle, but potentially unwanted, subcellular interactions.

Graphene grown on SiC substrates for
applications in electronics
A. Ballestar1,2, A. García-García1,3, L. Serrano1,2, J. M. de Teresa2,4,5, M. R. Ibarra2,5, P.
Godignon3
1Graphene Nanotech, S.L., Miguel Villanueva 3, 26001 Logroño, Spain
2INA, LMA, Universidad de Zaragoza, Mariano Esquillor, 50018 Zaragoza, Spain
3CNM-IMB-CSIC, Campus UAB, Bellaterra, 08193 Barcelona, Spain
4ICMA, Universidad de Zaragoza, 50009 Zaragoza, Spain
5Departamento Física de la Materia Condensada, Universidad de Zaragoza, 50009
Zaragoza, Spain
ana@gpnt.es
Since the isolation of graphene became accessible and the investigation of its properties
revealed outstanding features [1-2], a large number of companies aiming the production of
graphene-based materials and devices appeared in order to develop a new and powerful
technology. However, the fabrication process of high quality graphene in an industrial scale
remains as an open issue. The growth of graphene on Silicon Carbide (SiC) wafers is one of
the most promising routes for both, production and integration into planar technology
electronic applications [3-5]. We fabricated epitaxial graphene on top of different types of
SiC substrates. Of particular interest for electronic applications are those in which a bottom
gate is ready to be used and prepared prior to graphene growth. Processes of implantation
of nitrogen atoms at a controlled depth have been used in order to fabricate such substrate.
We investigated the properties of the graphene grown on top of them by means of non-
invasive techniques, e.g. Raman spectroscopy and optical and atomic force microscopy
(AFM), and completed the characterization with High Resolution Transmission Electron
Microscopy (HRTEM) and transport measurements. As a result, we found that high quality
single layer graphene is covering ~85% of the substrate and it appears to be a good
candidate for the development of bottom gated devices based on graphene in an
industrial scale.
References
[1] K. S. Novoselov et al., Nature, 306 (2004) 666.
[2] K. S. Novoselov et al., Nature, 490 (2012) 192.
[3] N. Camara et al., Appl. Phys. Lett., 93 (2008) 263102.
[4] P. N. First, MRS Bulletin, 35 (2010) 296.
[5] D. Waldmann et al., Nature Mat., 10 (2011) 357.

Figures
Figure 1: Raman results obtained on graphene grown on an implated SiC substrate. On the left hand
side, Raman spectra measured at the position indicated by the white cross in the picture besides.
On the right hand side, maping of the FWHM of the 2D peak, in which only the yellow dots indicate
positions where single layer graphene is not found, as it can be inferred from the color scale to the
right.
Figure 2: a.: Optical Image of a sample surface. Note the large width of the observed terraces.
Figure 2.b.: HRTEM image of a sample, in which the presence of one graphene layer and the buffer
layer are clearly seen (dark lines on the center of the image).

Water Activated Graphene Oxide Transfer
Using Wax Printed Membranes for Fast
Patterning of a Touch Sensitive Device
Luis Baptista-Pires1, Carmen C. Mayorga-Martínez1, Mariana Medina-Sánchez1, Helena Montón1 and
Arben Merkoçi1,2,
1Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona
Institute of Science and Technology, Campus UAB, Bellaterra, Barcelona, 08193, Spain
2ICREA, Barcelona, Spain
Luis.pires@icn.cat
Printed electronics paved the way to a new type of low cost technologies over plastics and
organic substrates for building electrical and electronic devices. We demonstrate a
graphene oxide printing technology using wax printed membranes for the fast patterning
and water activation transfer using pressure based mechanisms. The wax printed
membranes have 50 μm resolution, longtime stability and infinite shaping capability. The use
of these membranes complemented with the vacuum filtration of graphene oxide provides
the control over the thickness. Our demonstration provides a solvent free methodology for
printing graphene oxide devices in all shapes and all substrates using the roll-to-roll
automatized mechanism present in the wax printing machine. Graphene oxide was
transferred over a wide variety of substrates as textile or PET in between others. Finally we
developed a touch switch sensing device integrated in a LED electronic circuit.
References
[1] Luis Baptista-Pires, Carmen C. Mayorga-Martínez, Mariana Medina-Sánchez, Helena
Montón and Arben Merkoçi; ACS Nano; December 2015. DOI:
10.1021/acsnano.5b05963.
Figures
Figure 1: a) Wax printed membranes used for patterning graphene oxide. b) Platform used for
switching ON and OFF a LED.

Electrically-driven quantum light emission in
transition-metal dichalcogenides
M. Barbone1, C. Palacios-Berraquero2, D. M. Khara2, X.Chen1, I. Goykhman1, M. Atatüre2, A.
C. Ferrari1
1Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, UK
2Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK
mb901@cam.ac.uk
Integrating single-photon sources into on-chip optical circuits is a challenge for scalable
quantum-photonic technologies aiming at the ultimate goal of using single-photons for
quantum information, quantum key distribution and quantum lithography[1]. Despite a
plethora of single-photon sources reported to-date[2-4], all-electrical operation, critical for
applications where miniaturization plays a key role, such as on-chip photonic circuits[1,5,6],
has been reported for only three systems: semiconductor quantum dots[6], nitrogen
vacancies in diamond[7] and SiC[8]. The attractiveness of single-photon sources in layered
materials[9-13] stems from their ability to operate at the fundamental limit of single-layer
thickness, with high extraction efficiency (i.e. the number of photons generated by the
quantum dot minus those lost after emission due to scattering while crossing the quantum
dot’s host matrix) and with the potential to integrate into conventional and scalable high-
speed optoelectronic devices[14], as opposed to the single-photon emitting systems
known so far, which suffer dramatically from any proximity to an interface[5]. Here we
report light emitting devices realized by vertical stacking graphene, h-BN and mono- and
bilayer transition-metal dichalcogenides (TMDs). We show that quantum emitters in WSe2
can operate electrically. We further report all-electrical single-photon generation in the
visible spectrum from a new class of quantum emitters in WS2 (Fig. 1). Our TMD-based
quantum emitters show electrically-driven single-photon generation over a ~180 nm
spectrum. Our results demonstrate that layered materials are a platform for integrable and
atomically precise quantum photonics device technologies.
References
[1] L. O'Brien et al, Nat. Photonics 3 (12), 687 (2009).
[2] J. McKeever et al., Science 303 (5666), 1992 (2004).
[3] S. G. Lukishova et al., IEEE J. Sel. Top. Quantum Electron. 9 (6), 1512 (2003).
[4] A. Beveratos et al., Phys. Rev. Lett. 89 (18), 187901 (2002).
[5] M. D. Eisaman et al., Rev. Sci. Instr. 82 (7), 071101 (2011).
[6] Z. Yuan, et al. Science 295 (5552), 102 (2002).
[7] N. Mizuochi et al. Nat. Photonics, 6 (5), 299 (2012).
[8] A. Lohrmann et al. Nat. Commun., 6, 7783 (2015).
[9] A. Srivastava et al. Nat. Nanotechnol., 10 (6), 491 (2015).
[10] Y.-M. He et al. Nat. Nanotechnol., 10 (6), 497 (2015).
[11] M. Koperski et al. Nat. Nanotechnol., 10 (6), 503 (2015).
[12] C. Chakraborty et al. , Nat. Nanotechnol., 10 (6), 507 (2015).
[13] P. Tonndorf et al., Optica, 2 (4), 347 (2015).
[14] H. Wang et al., Nat. Commun., 6, 8831 (2015)..

Figures
Figure 1: (a) Map of the EL spectrum of electrically-driven quantum light in WS2 as a function of the
applied bias displaying the evolution of the excitonic complexes and the emergence of the
delocalised emission at higher bias. The spectrum at the top (bottom) of the panel is a line cut for
injection current of 1.8 μA (0.578 μA) showing classical (quantum) light. (b) Second order correlation
measurements confirm the single-photon nature of the emitters at low injection current.

Electron trajectories for magnetic focusing in
graphene
S. Bhandari1, G.-H. Lee2, P. Kim1, 2 and R.M. Westervelt1, 2
1School of Engineering and App. Sciences, Harvard University Cambridge, MA 02138, U.S.A
2Department of Physics, Harvard University Cambridge, MA 02138, U.S.A
sbhandar@fas.harvard.edu
Scanning Gate Microscopy (SGM) is a powerful tool for gaining insight into the local
electronic properties of nanoscale devices. The charged tip of a scanned probe microscope
is held just above the sample surface, creating an image charge inside the device that
scatters electrons. By measuring the change in conductance while the tip is raster scanned
above the sample, an image of electron motion can be obtained [1-3]. Using this technique,
we previously imaged magnetic focusing in a two-dimensional electron gas (2DEG) inside a
GaAs/AlGaAs heterostructure [2]. We have recently used a cooled SGM to image cyclotron
orbits [3] in ballistic hBN-graphene-hBN devices in magnetic focusing regime [4]. Magnetic
focusing occurs when orbits passing into the sample from one narrow contact pile together
on a second contact that is located an integer number of cyclotron diameters away.
In this talk, we describe our SPM imaging technique by presenting ray-tracing trajectories of
ballistic electron flow through the sample that include scattering by the image charge below
the tip. The electrostatic image charge creates a density dip ntip that locally reduces the
Fermi energy EF(n + ntip), creating a force F = ∇EF that pushes electrons away from the tip
location. This force scatters orbits away from the receiving contact, as shown by the red
traces in Fig. 1a. An experimental SPM image of the cyclotron orbit on the first magnetic
focusing peak shown in Fig. 1b displays the measured change Rm in transresistance vs. tip
position. A corresponding simulated image in Fig. 1c is obtained by displaying the change T
in transmission caused by the presence of the tip. In the simulations, we injected 10,000
trajectories into the graphene with a uniform distribution across the width of the contact and
a uniform angular distribution at each point. The simulated image (Fig. 2c) is a good match
to the experimental results (Fig. 2b). This approach allows us to investigate the influence of
the electron density n and magnetic field B on images of electron flow by comparing
experiments with simulations.
* Supported by the Dept. of Energy grant DE-FG02-07ER46422.
References
[1] M.A. Topinka and R.M. Westervelt et al., Nature 410, (2001) 183.
[2] K.E. Aidala and R.M. Westervelt et al., Nature Physics 3, (2007) 464.
[3] S. Bhandari et al., arXiv:1510.05197v3, (2015).
[4] T. Taychatanapat and P. Jarillo-Herrero et al., Nature Physics 9, (2013) 225.

Figures
Figure 1: (a) Ray-tracing trajectories for B = 0.130 T and tip position (0.75 µm, 0 µm). Cyclotron-orbit
trajectories are deflected by the density change beneath the tip. (b) Experimental and (c)
simulated cyclotron orbit images on the first focusing peak for n = 1.29x1011 cm-2 and B = 0.130 T.
Y(µm)
X (µm)
0
-1
1
0
1 2
2
a
-15
15
0
X (µm)
ΔRm(Ω)
2
0
1
0 1 2
Y(µm)
b
-15
15
0
X (µm)
T (%)
2
0
1
0 1 2
Y(µm)
a b bc

Si-grown vertically aligned graphene
nanosheets electrodes for high performance
micro-supercapacitors using ionic liquid
electrolytes
David Aradilla, Marc Delaunay, Saïd Sadki, Jean-Michel Gérard and Gérard Bidan
Univ. Grenoble Alpes, CEA/INAC, 17, rue des Martyrs, F-38000 Grenoble, France
gerard.bidan@cea.fr
Over the past years, the development of innovative technological applications in the field of
micro-electronics, micro-medicine or nano-engineering, has sparked a great deal of
attention in the research of high performance energy storage units. Recently, tremendous
efforts have been devoted to develop novel high-performance micro-supercapacitors (m-
SCs) based on nanostructured material electrodes with advanced architectures. From this
perspective, new materials based on nanostructured silicon (e.g. silicon nanowires[1]), or
nanostructured carbonaceous materials have attracted a special interest in the field of
microsupercapacitor devices owing to their unique properties in terms of long cyclability and
high power pulse.
Accordingly, in recent years micro-supercapacitors based on reduced graphene oxide
(rGO) electrodes have been extensively investigated. However, the rGO morphology as
horizontally stacked sheets parallel to the electrode surface does not allow easy diffusion of
electrolyte ions. The advent of vertically oriented graphene nanosheets (VOGNs) grown by
plasma deposition allowed easy and fast access of ions to the electrode [2] and made it
possible to usher m-SCs into the high-frequency filtering arena with high ripple current [3].
This study reports the synthesis and application of VOGNs deposited on highly doped silicon
substrates through an alternative and catalyst-free method based on electron cyclotron
resonanceplasma enhanced chemical vapor deposition (ECR-CVD) technique. The
graphene-based electrodes were employed in a symmetric micro-supercapacitor device
using an aprotic ionic liquid (PYR13TFSI) as electrolyte, which was used owing to its moderate
viscosity and wide voltage stability window (4 V) [1]. A complete and detailed
electrochemical characterization of the micro-device was evaluated by cyclic voltammetry,
galvanostatic charge–discharge cycles and electrochemical impedance spectroscopy.
Furthermore, an exhaustive morphological and structural characterization of the graphene
electrodes was carried out by using scanning electron microscopy (fig. 1 A)), transmission
electron microscopy and Raman spectroscopy.
The device was able to deliver an outstanding specific capacitance value of 2 mF cm-2, (fig.
1 B)) a power density value of 4 mW cm-2 and an energy density value of 4 mW h cm-2
operating at a large and stable cell voltage of 4 V with a quasi-ideal capacitive behaviour.
Moreover, the lifetime of the device exhibited a remarkable electrochemical stability
retaining 80% of the initial capacitance after 150 000 galvanostatic charge–discharge cycles

(fig. 1C)) at a high current density of 1 mA cm-2. These performances open the route for on-
chip energy storage micro-units and their integration into miniaturized electronic devices [4].
References
[1] D. Aradilla, P. Gentile, G. Bidan, V. Ruiz, P. Gomez-Romero, T. J. S. Schubert, H. Sahin, E.
Frackowiak, S. Sadki, NanoEnergy, 9 (2014) 273.
[2] Z. Bo, S. Mao, Z. Zhao Jun Han, K. Cen, J. Chen, K. Ostrikov, Chem. Soc. Rev., 44 (2015)
2108.
[3] J. R. Miller and R. A. Outlaw, J. Electrochem. Soc., 162 (2015) A5077.
[4] D. Aradilla, M. Delaunay, S. Sadki, J.-M. Gérard, G. Bidan, J. Mat. Chem. A, 3 (2015)
19254.
Figures
Figure 1: A), SEM images of the cross sectional view of VOGNs deposited using a deposition time of
0.4 h (2 µm thickness) on Si substrate; B), Specific capacitance as a function of current densities (0.25
- 2 mA cm-2) and C) Lifetime testing of the devices performed using 150 000 complete charge–
discharge cycles at a current density of 1 mA cm-2 between 0 and 4 V using different thicknesses of
VOGNs (1 (red dot), 2 (green triangle), 6 (orange square) and 12 (blue diamond) µm respectively).

Improving graphene-based devices:
New developments studied on the nanoscale
via nano-FTIR microscopy and spectroscopy
Miriam Böhmler
neaspec GmbH, Bunsenstr. 5, 82152 Munich, Germany
miriam.boehmler@neaspec.com
The performance of the next-generation optoelectronic devices based on graphene is
strongly influenced by the structure-function relationship. For example, a long life time of the
surface plasmons is, although theoretically predicted, still lacking due to strong damping
mechanisms. New ideas have thus been introduced, and they strongly demand for an
analytic tool that allows to study the plasmonics behavior with nanometer resolution in real
space.
With scattering-type scanning near-field microscopy (s-SNOM) such a tool has been
invented, enabling the nanoscale mapping of nano-devices. It combines the best of two
worlds: the high spatial resolution of atomic force microscopy (AFM) and the analytical
power of infrared spectroscopy. The spatial resolution of about 10 nm of nano-FTIR
microscopy opens a new era for modern nano-analytical applications such as chemical
identification, free-carrier profiling and plasmonic vector near-field mapping.
Recent graphene related research will be highlighted, demonstrating the power of nano-FTIR
microscopy due to its contact-free direct access to the plasmonic properties, local
conductivity, electron mobility and intrinsic doping via plasmon interferometry imaging [1-4].
Using plasmon interferometry, nano-FTIR microscopy can investigate losses in graphene by
exploring real-space profiles of plasmon standing waves formed between the tip of our
nano-probe and the edges of the samples (fig1). Plasmon dissipation quantified through this
analysis is linked to the exotic electrodynamics of graphene.
Using femtosecond light sources, s-SNOM has successfully be extended towards ultrafast
experiments with up to 10-femtosecond temporal resolution. Investigation of carrier-
relaxation dynamics in graphene [5] demonstrates the high potential for ultrafast near-field
microscopy.
A new s-SNOM configuration even combining near-field microscopy with photocurrent
nanoscopy (fig2) [6]. The symbiosis of these two complementary techniques opens up a
complete new research field for nano-spectroscopy, bringing together optical, opto-
electronic and electronic analysis on the nanoscale in a complete non-destructive and non-
invasive way.
Beyond the mentioned examples a further overlook of the latest research will be given in this
presentation.

References
[1] A Woessner et al., Nature Materials 14 (2015) 421.
[2] S. Dai et al., Nature Nanotechnology 10 (2015) 682.
[3] Z. Fei et al., Nature 487 (2012)
[4] J. Chen et al., Nature 487 (2012) 82.
[5] M. Wagner et al., Nano Letters 14, (2014) 894.
[6] A. Woessner et al., arXiv:1508.07864v1.
Figures
Figure 1: Correlative AFM and nano-FTIR microscopy. Contact-free direct access to local
conductivity, electron mobility and intrinsic doping via plasmon interferometry imaging.
Figure 2: Schematic of near-field photocurrent experiment. Right: Photocurrent near-field map of a
graphene sheet revealing characteristic patterns on the nanoscale. (From [6].

Large-area electrical characterisation of
graphene
Peter Bøggild, Jonas Due Buron, Dirch Hjorth Petersen, David M. A. Mackenzie, Tim Booth,
Peter Uhd Jepsen
DTU Nanotech, Ørsteds Plads, Technical University of Denmark, Kgs. Lyngby, Denmark
peter.boggild@nanotech.dtu.dk
The gap between the rapidly upscaling of large-area graphene production compared to
available electrical characterisation methods could become a major roadblock for
emerging graphene applications. As an alternative to the often slow, cumbersome and
destructive characterisation techniques based on electrical field effect or Hall
measurements, THz time-domain spectroscopy (THzTDS) [1] not only maps the conductance
quickly and non-destructively, but also accurately. This is confirmed by direct comparison
with micro four-point probe (M4PP) measurements, another lowinvasive, well-established
method already used by major semiconductor manufacturers for inline quality control. In
addition to spatial maps of the sheet conductance, THz-TDS and M4PP offer unique
information on otherwise hidden defects and inhomogeneities, as well as detailed scattering
dynamics in the graphene film on nm to mm length scales [2-4]. We also show that THz-TDS
can be used to map the carrier density and mobility, either by transferring graphene to a
substrate equipped with a THztransparent back gate [5], or by analyzing the frequency
response in detail to extract the scattering time at a constant carrier density [6], which allows
the mobility to be mapped even on insulating substrates. In contrast with conventional field
effect and Hall measurements, THz-TDS measures the actual, intrinsic carrier mobility, i.e. not
derived from a conductance (extrinsic) measurement. As field effect measurements are
expected to remain useful for benchmarking, we have developed a fast (1 hour turnaround
time) and clean (no solvents or water) method for converting a graphene wafer into 49 FET
devices with electrical contacts, using a combination of a physical shadow mask and laser
ablation [6,7]. Finally, the challenges of realizing in-line monitoring of the electrical properties
in a graphene production scenario, and the prospects for establishing THz-TDS mapping as a
measurement standard for largearea graphene films will be discussed.
References
[1] J. Buron, D. H. Petersen, P. Bøggild, D. G. Cooke, M. Hilke, J. Sun, W. Whiteway, P. F.
Nielsen, O. Hansen, A. Yurgens, P. Uhd-Jepsen, Nano Letters, 12 (2012), 5074.
[2] J. D. Buron, F. Pizzocchero, B. Jessen, T. J. Booth, P. F. Nielsen, O. Hansen, M. Hilke, E.
Whiteway, P. U. Jepsen, P. Bøggild, D. H. Petersen, Nano Letters, 14 (2014), 6348.
[3] M. R. Lotz, M. Boll, O. Hansen, D. Kjær, P. Bøggild, D. H. Petersen, Appl. Phys. Lett., 105
(2014), 053115.
[4] M. Boll, M. R. Lotz, O. Hansen, F. Wang, D. Kjær, P. Bøggild, and D. H. Petersen, Phys.
Rev. B, 90 (2014), 245432.
[5] J. D. Buron, D. M. A. Mackenzie, D. H. Petersen, A. Pesquera, A. Centeno, P. Bøggild,
A. Zurutuza, P. U. Jepsen, Optics Express, 24 (2015), 250745.

[6] J. D. Buron, F. Pizzocchero, P. U. Jepsen, D. H. Petersen, J. M. Caridad, B. S. Jessen, T. J.
Booth, P. Bøggild, Scientific Reports 5 (2015), 12305.
[7] D. Mackenzie, J. Buron, B. S. Jessen, A. Silajdzic, A. Pesquera, A. Centeno, A. Zurutuza,
P. Bøggild and D. H. Petersen, 2D Materials, 4 (2015), 045003.

Graphene based supercapacitors: results and
perspectives
Paolo Bondavalli1, Gregory Pognon2
1Head of the nanomaterial topic team, Joint unit CNRS/Thales, Physics Department, Thales
Research and Technology, 91120 Palaiseau, France
2Multi-functional Material Lab, GTM department, Thales Research and Technology, 91120
Palaiseau, France
Supercapacitors are electrochemical energy storage devices that combine the high energy-
storage-capability of conventional batteries with the high power-delivery-capability of
conventional capacitors. In this contribution we will show the results of our group recently
obtained on supercapacitors with electrodes obtained using mixtures of carbonaceous
nanomaterials (carbon nanotubes (CNTs), graphite, graphene, oxidised graphene). The
electrode fabrication has been performed using a new dynamic spray-gun based deposition
process set-up at Thales Research and Technology (patented). First, we systematically
studied the effect of the relative concentrations of Multi-Walled Carbon Nanotubes
(MWCNTs) and graphite on the energy and power density. We obtained a power increase of
a factor 2.5 compared to barely MWCNTs based electrodes for a mixture composed by 75%
of graphite. This effect is related with the improvement of the mesoporous distribution of the
composites and to the increase of the conductance as pointes out by Coleman et al. After
these results, we decided to test water as a solvent in order to reduce the heating
temperature and to obtain a green type process without toxic solvents. To achieve stable
suspensions we oxidised the graphene and the CNTs before putting them in water. We
observed that changing the Graphene Oxide concentrations we obtained different value of
capacitance and energy. The best results were obtained with 90% of GO and 10% of CNTs.
We obtained 120F/g and a power of 30kW/Kg. The importance of these results is that it is the
first time that these performances have been obtained for graphene related materials using
an industrial fabrication suitable technique that can be implemented in roll-to-roll
production. In this way we were able to fabricate stable suspensions in less than one hour
compared to three days using NMP. All these results demonstrate the strong potential to
obtaining high performance devices using an industrially suitable fabrication technique.
Finally, new results using mixtures of Carbon nanofibers and graphene will be shown. These
new composite allow to use ionic liquid as electrolytes and so to increase dramatically the
energy stored in the device without reducing the power.
References
[1] Supercapacitor electrode based on mixtures of graphite and carbon nanotubes
deposited using a new dynamic air-brush deposition technique, P Bondavalli,
C.Delfaure, P.Legagneux, D.Pribat JECS 160 (4) A1-A6, 2013
[2] Non-faradic carbon nanotubes based supercapacitors : state of the art, P.Bondavalli,
D.Pribat, C.Delfaure, P.Legagneux, L.Baraton, L.Gorintin, J-P. Schnell, Eur. Phys. J. Appl.
Phys. 60,10401, 2012.

Figures

Atypical exciton-phonon interactions in WS2
and WSe2 monolayers: an ab-initio study
Andrés R. Botello-Méndez, Yannick Gillet, Elena del Corro, Marcos Pimenta, Mauricio
Terrones, Xavie Gonze, Jean-Christophe Charlier
IMCN-NAPS, Université catholique de Louvain, Chemin des étoiles 8, 1348 Louvain-la-neuve,
Belgium
andres.botello@uclouvain.be
The resonant Raman spectra of single-layered WS2 and WSe2 have been measured in a
wide range of energies (using more than 25 laser lines). The resulting Raman excitation
profiles of these very similar materials in both crystal and electronic structure show
unexpected differences. All Raman features of WS2 monolayers are enhanced by the first-
optical excitations, but the response is not symmetric for the spin-orbit related XA and XB
excitons. More interestingly, first order Raman bands of WSe2 are not enhanced at XA/B
energies, but they are at the XC excitation. In this work, such intriguing phenomena are
investigated by DFT calculations including excitonic effects by solving Bethe-Salpeter
equation. We show that the ratio of the interaction of the XC to the XA excitons with the
different phonons explains the different Raman responses of WS2 and WSe2 and the relative
low Raman enhancement for the WSe2 modes at XA/B energies (see the figure). These results
reveal unusual exciton-phonon interactions and open new avenues for understanding the
physics of 2D materials, where weak screening plays a key role coupling different degrees
of freedom (spin, optic, electronic).
References
[1] E. del Corro, et. al. (submitted).
[2] Yilei Li, et al., Phys. Rev. B. 90 (2014) 205422.
Figures
Figure 1: Comparison between the Raman excitation profile (REP) and the reflectance (adapted
from [2] ) for WS2 and WSe2, showing qualitative differences

Metrology for Graphene and 2-D Materials:
Characterisation and Standardisation for an
Emerging Industry
Barry Brennan and Andrew J. Pollard
National Physical Laboratory, Teddington, TW11 0LW, United Kingdom
barry.brennan@npl.co.uk
Graphene has already demonstrated that it can be used to the benefit of metrology as a
new quantum standard for resistance [1]. However, there are many application areas where
graphene and other 2-D materials may be disruptive; areas such as flexible electronics,
nanocomposites, sensing, filtration membranes and energy storage [2]. Applying metrology
to the area of graphene is now paramount to enable the emerging global graphene
industry and bridge the gap between academia and industry. Measurement capabilities
and expertise for a wide range of scientific areas are required to address this challenge. The
combined and complementary approach of varied characterisation methods for structural,
chemical and electrical properties, will allow the real-world issues of commercialising
graphene and other 2-D materials, such as determining the suitability and realistic
performance enhancement of graphene-enabled products for the many different types of
graphene, to be addressed.
Examples of metrology challenges that have been overcome through cross-disciplinary
research, newly developed measurement techniques and collaboration with both
academia and industry will be discussed, for specific consumer application areas, using both
established and emerging measurement techniques such as Raman spectroscopy, tip-
enhanced Raman spectroscopy (TERS) and secondary ion mass spectrometry (SIMS).
We will discuss the quantitative determination of the lattice disorder present in graphene
layers through studying the evolution of Raman spectra with defect size and density, for
vacancy defects created via carefully controlled ion bombardment, and explore how this
enables an accurate determination of the phase-breaking length of graphene. This is further
extended to other 2-D materials such as MoS2 and we investigate the application of Raman
spectroscopy for quantification of defects in these systems.
We will further discuss understanding the measurement of real-world graphene samples, and
the application of routine industry ready techniques, such as controlled mass-selected argon
cluster cleaning to remove polymer residues present on the transferred graphene surface,
which minimise damage to the underlying graphene. The application of SIMS measurements
in these studies will be discussed, and further details of how it can be applied to the
understanding of the growth mechanisms of graphene and other 2-D materials on metal
catalysts will be explored. Other more novel applications of SIMS in relation to the
characterisation of dispersed graphene materials in polymer composites for flexible device
technologies, and how it can aid in identifying contamination and the degree of dispersion
of different graphene products will also be presented. In addition, how these metrology

investigations ultimately lead to the development of international graphene standards will
also be described.
References
[1] T.J.B.M. Janssen et al. Rep. Prog. Phys. 76 (2013) 104501.
[2] K.S. Novoselov et al. Nature, 490 (2012) 192.

Ultra high photoresponsivity with field effect
control in a graphene nanoribbon device
Andrea Candini1*, Leonardo Martini1,2, Zongping Chen3, Neeraj Mishra4, Camilla Coletti4,
Akimitsu Narita3, Xinliang Feng5, Klaus Müllen3, Marco Affronte2,1
1Centro S3, Istituto Nanoscienze - CNR, via G. Campi 213/A , 41125 Modena, Italy
2Dip. FIM, Università di Modena e Reggio Emilia via G. Campi 213/A, 41125/A Modena, Italy
3Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
4Center for Nanotechnology Innovation @ NEST, IIT, Piazza San Silvestro 12, 56127 Pisa, Italy
5CfAED & Dep. of Chemistry and Food Chemistry, TU Dresden, 01062 Dresden, Germany
*andrea.candini@nano.cnr.it
We report on the realization and characterization of a novel concept of highly-performing
nano-optoelectronic device, fully based on graphene. The active channel consists in a film
of structurally well-defined graphene nanoribbons (GNRs) contacted by multilayer graphene
electrodes. GNRs are grown by a large throughput chemical vapor deposition (CVD)
method and are transferred on on pre-fabricated graphene electrodes.
The resulting device (see Figure 1) shows n-type field effect transistor (FET) behavior, with a
large tunability of the device current with the applied gate voltage, likely as a consequence
of the good affinity between the GNRs and the graphene-based electrodes, limiting the
contact resistance. We demonstrate a current on/off ratio as high as 104 at room
temperature, which is the best value reported so far for devices based on bottom-up
fabricated GNRs.
Our fully graphene-based devices show an ultra-high photo-responsivity at the visible-UV
frequencies, as high as 106 A/W for low illumination powers, which is almost nine orders of
magnitude higher than standard graphene. The improved sensitivity is ascribed to the
semiconducting nature of the GNRs (with a direct bandgap of around 1.8 eV) and to the
peculiar geometry of our device, where the contacts regions (i.e. the interface between the
GNRs and graphene) is directly exposed to the light.
With the possibility to precisely tailor the chemical and physical properties of the GNRs
directly at the synthetic level, and the demonstrated use of large scale production
techniques, our results show the great potentialities of hetero-structured graphene devices
for applications in nano-optoelectronics and sensing.

Figures
Figure 1: Schematic view of the device: graphene nanoribbon (GNRs) are contacted using
multilayer graphene as the electrode material.

Fast One-Pot Synthesis of MoS2/Crumpled
Graphene p-n Nanonjunctions for Enhanced
Photoelectrochemical Hydrogen Production
Francesco Carraro1, Laura Calvillo1, Mattia Cattelan1, Marco Favaro1,2, Marcello Righetto1,
Silvia Nappini3, Igor Píš3,4, Verónica Celorrio5, David J. Fermín5, Alex Martucci6,Stefano
Agnoli*,1 and Gaetano Granozzi1
1Department of Chemical Sciences, University of Padova, via Marzolo 1, Padua 35131, Italy
2Advanced Light Source (ALS) Joint Center for Artificial Photosynthesis (JCAP), Lawrence
Berkeley National Laboratory, 1 Cyclotron Rd., M/S 6R2100 Berkeley, CA 94720, USA
3 Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park-Basovizza,
Strada Statale 14, Km.163.5, I-34149 Trieste, Italy
4 Elettra-Sincrotrone Trieste S.C.p.A., Strada Statale 14, Km.163.5, I-34149 Trieste, Italy
5School of Chemistry, University of Bristol, Cantocks Close, Bristol BS8 1TS, U.K.
6Industrial Engineering Department and INSTM, University of Padova, Padova 35131, Italy
francesco.carraro.7@studenti.unipd.it
Besides being a material with exceptional electrical conductivity, outstanding mechanical
toughness and remarkable optical properties, graphene is, at its very nature, a perfect and
soft 2D atomic sheet. This combination of confinement to nanodimension and easy
mechanical pliability makes it an incredibly versatile material that can be shaped in almost
any form. This great potential for manipulation paves the way toward the development of
advanced architectures that combine graphene intrinsic properties with nanodesign
optimized for specific functions. [1] Interestingly, the two-dimensional nature of graphene
implies the ability to undergo easy folding and bending, just like macroscopic objects, thus
graphene sheets can be opportunely crushed to form crumpled nanoballs [2,3]. This special
conformation is quite intriguing since it prevents the re-stacking of single sheets, allowing the
preparation of high surface area systems Moreover, mechanical strain induced in the
material by wrinkles and folds can promote unexpected chemical reactivity and better
electrochemical performances. [4,5] Aerosol processing allows preparing in high yield and
short time hierarchical graphene nanocomposites with special crumpled morphology,
employing aqueous suspensions of graphene oxide(GO)[3]. By modular insertion of suitable
precursors in the starting solution, it is possible to synthesize different types of graphene based
materials ranging from heteroatoms doped graphene nanoballs, to hierarchical nanohybrids
made up by nitrogen doped crumpled graphene nanosacks that wrap finely dispersed MoS2
nanoparticles. These materials are carefully investigated by microscopic (SEM, standard and
HR TEM), grazing incidence X-ray diffraction (GIXRD) and spectroscopic (high resolution
photoemission, Raman and UV-visible spectroscopy) techniques, evidencing that nitrogen
dopants provide anchoring sites for MoS2 nanoparticles, whereas crumpling of graphene
sheets drastically limits aggregation. The activity of these materials is tested toward the
photo-electrochemical production of hydrogen, obtaining that N-doped graphene/MoS2
nanohybrids are seven times more efficient with respect to single MoS2 because of the
formation of local p-n MoS2/N-doped graphene nanojunctions, which allow an efficient
charge carrier separation.

References
[1] Agnoli, S. and Granozzi, G. Surf. Sci. 2013, 609, 1-5.
[2] Ma, X.; Zachariah, M.R. and Zangmeister, C.D. Nano Lett. 2011, 12, 486-489.
[3] Mao, S.; Lu, G. and Chen, J. Nanoscale 2015, 7, 6924-6943.
[4] Bissett, M.; Konabe, S.; Okada, S.; Tsuji, M. and Ago, H. ACS Nano 2013, 7, 10335-10343.
[5] Wen, Z.; Wang, X.; Mao, S.; Bo, Z.; Kim, H.; Cui, S.; Lu, G.; Feng, X. and Chen, J. Adv.
Mater. 2012, 24, 5610-5616.
Figures

2D Materials: science and technology
Antonio H. Castro Neto
National University of Singapore. Singapore
phycastr@nus.edu.sg
Over the last five years the physics of two-dimensional (2D) materials and heterostructures
based on such crystals has been developing extremely fast. From one hand, with new 2D
materials, more and more truly 2D physics started to appear (Kosterlitz-Thouless (KT)
behaviour, 2D excitons, commensurate-incommensurate transition, etc). From another - we
see the appearance of novel heterostructure devices - tunnelling transistors, resonant
tunnelling diodes, light emitting diodes, etc. Composed from individual 2D crystals, such
devices utilise the unique properties of those crystals to create functionalities which were not
accessible to us in other heterostructures. In this talk I will review the properties of novel 2D
crystals and how those properties are used in new heterostructure devices.

Foldable Conductive Cellulose Fiber Networks
Modified by Graphene Nanoplatelet-Bio-Based
Composites
Pietro Cataldi1, Ilker Bayer1, Athanassia Athanassiou1, Francesco Bonaccorso2, Vittorio
Pellegrini2, Roberto Cingolani1,2
1Smart Materials, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
2Graphene Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
pietro.cataldi@iit.it
Truly foldable electronic components require a stretchable/foldable substrate modified
with a conducting element that can maintain its electrical properties and mechanical
integrity even after severe mechanical manipulations and repeated folding events [1,2].
We design and realize a material with these characteristics, exploiting the combination of
biodegradable components (substrate and the polymer matrix) and graphene
nanoplatelets [3]. A commercially available thermoplastic starch-polycaprolactone based
polymer (Mater-Bi) and graphene nanoplatelets are simultaneously dispersed in an organic
solvent obtaining conductive inks [3]. The obtained inks are spray painted on pure cellulose
papers and hot-pressed into their fiber network after drying. Transmission electron
microscopy shows that during hot-pressing, the conductive ink is physically embedded into
the cellulose fibers (see Figures a-b), resulting in high electrical conductivity of the flexible
composite. The resultant nanostructure is a flexible composite which exhibits isotropic
electrical conductivity, reaching a sheet resistance value in the order of ≈10 Ω/□,
depending on the relative concentration of the graphene nanoplatelets and the Mater-bi.
Examples of excellent electrical conductivity are reported in Figures c-g. In Figure c, a
photograph of a chip carrying 14 LED lights in contact with the conductor is presented. The
circuit is powered by a 5V USB cable and the LEDs are lit up as shown in Figure c-d. The
paper-like flexible conductors can sustain many harsh folding events (see Figure e-g),
maintaining their mechanical and electrical properties and showing only a slight decrease
of the electrical conductivity with respect to the unfolded sample. Unlike conductive paper
technologies, the proposed paper-like flexible conductors demonstrate both sides
electrical conductivity due to pressure-induced impregnation.
References
[1] W. J. Hyun et al., Adv. Mater. 34(2013), 4729-4734.
[2] Z. Ling et al., PNAS, 47 (2014), 16676-16681.
[3] Cataldi et al., Adv. El. Mater., 12(2015).

Figures
Figure 1: (a) and (b) show cross-sectional TEM images of the conductive composite. (a) is a lower
magnification. In (b) a higher magnification image shows many GnPs flakes embedded into the
cellulose fibers. (c) and (d) are photograph of a LED chip placed on the foldable conductor. (c)
shows a 14 LED chip lighting up once the foldable paper-like conductor is connected to a 5 V USB
port of a computer. In (d) the same photograph of (c) was taken in dark. (e) is a photograph of a
similar concept of (c) for a single LED attached to a conducting base with conducting paths
embedded into the cellulose sheet. (f) represents the same material squashed and pressed into a
wrinkled ball by hands. (g) exhibits a photograph of the paper-like conductor after unflattening the
squashed ball of (f). The LED light still works after this severe mechanical treatment.

DNA Detection Using Graphene Field-Effect
Transistors
Jiri Cervenka
Department of Thin Films and Nanostructures, Institute of Physics ASCR, v. v. i.,
Cukrovarnicka 10/112, 162 00 Prague, Czech Republic
cervenka@fzu.cz
DNA is a nucleic acid molecule encoding genetic information, which has a vital role for the
development and functioning of all known living organisms. Therefore, sensitive and selective
detection of DNA is of fundamental importance for a large number of applications in
medicine and biotechnology. Recent advances in graphene-based electrical sensors have
demonstrated their unprecedented sensitivity to adsorbed molecules, which holds great
promise for label-free DNA sequencing and detection.
Here we present a comparative study of the electronic detection of DNA on graphene field-
effect transistors (GFETs) in vacuum and liquids. We compare the device sensitivity for direct
detection of DNA on GFETs and using specific binding of target DNA with complementary
DNA molecules attached to graphene, providing an estimate of the GFET sensitivity limit.
Furthermore, we analyze the ability of GFETs to directly discriminate individual DNA
nucleobases in electronic transport measurements. We demonstrate that GFETs are able to
measure distinct, coverage dependent, conductance signatures upon adsorption of DNA
nucleobases in vacuum (Figure 1) [1]. This method allows for electronic discrimination of
individual DNA nucleobases on GFETs, providing a first step towards graphene based
electronic DNA sequencing. The existence of molecule specific signatures in electronic
transport measurements is verified by independent synchrotron-based X-ray photoelectron
spectroscopy (XPS) measurements. To get a deeper insight into the origin of the sensing
mechanism and molecular recognition in GFET measurements we performed ab initio
electronic structure calculations using density functional theory (DFT). The molecular
recognition is found to be closely linked with specific noncovalent molecular interactions of
DNA nucleobases with graphene. The absorption of molecules resulted in the electronic
structure change of graphene which is driven by complex interplay between molecule-
graphene and intermolecular interactions, interface dipole moment, charge transfer, work
function change and screening effects. These effects open up a range of new opportunities
for molecular recognition of different biomolecules in graphene-based electronic sensing.
References
[1] N. Dontschuk, A. Stacey, A. Tadich, K. J. Rietwyk, A. Schenk, M. T. Edmonds, O.
Shimoni, C. I. Pakes, S. Prawer, and J. Cervenka, Nature Communications 6 (2015)
6563.

Figures
Figure 1: a Detection of DNA nucleobases using GFETs, which is based on measurements of shifts of
the Dirac point. b Coverage dependence of induced charge carrier density (determined from the
Dirac point shifts) in GFETs by DNA nucleobases [1].

Graphene: Raw Graphite into Industrial
Partnerships
Gordon Chiu
Grafoid Inc., Canada
dr.chiu@grafoid.com
Grafoid’s journey into the industrial production of few layer Mesograf™ graphene from raw,
graphite ore using a novel process has led to stunning results. Managing the alignment of
human resources, investment capital and physical resources requires strategic planning,
determination, R&D hubs and timing. Partnering with like-minded governments and persistent
growth in industrial and academic partnerships have led to those collaborations that allow
for the joint discovery of new applications and strong networks of support.
Today, our expansion continues with strong interest from academic, government, & industry
partners seeking a de-risked multinational advanced materials company with an
international presence and a robust infrastructure with multiple production sites. Grafoid is a
diversified graphene company focused on cross-border production driven by application
partnerships.

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