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METROLOGY WITH SINGLE ELECTRONS

       VLADIMIR BUBANJA




                                  1
Single Electronics




                     2
Single Electronics




                     M.C. Esher




                                  3
Single Electronics




                     M.C. Esher




                                  4
Outline


• Metallic islands
• Superconducting islands
• Solid state entanglers

         Summary




                            5
Outline


• Metallic islands
• Superconducting islands
• Solid state entanglers

         Summary




                            6
7
8
9
Hamiltonian of the system:

                                  H H 0 + HT ,
                                  =

=H0      ∑
        i=S ,I ,D
                    H i + H env

      ∑ (l 
  H i = + eVi )cl†,i cl ,i ,(i =
         l
                               S , D)

=HI     ∑α
          α cα cα + Q 2 / 2CΣ
              †




  H env = ∑ ωα bα bα
                 †

             α

                                    H T = H T 2 , H Ti = H i− ,
                                        HT 1 +         H i+ +

    =H1+                                ∑
                                        = ( H i+ )†
                                          Tα p cα (t )c p (t )e − iϕ1 ( t ) , H i−
                                        α,p
                                                †




                                                                                     10
Inelastic cotunneling



γ ∝ ∫ d ε1 ∫ d ε 2 Γ1 (ε1 + eV1 ) Re[ D(ε1 , ε 2 )] Γ 2 (ε 2 + eV2 )

Γi (eV ) ∝ ∫ d ε1 ∫ d ε 2 f (ε1 )[1 − f (ε 2 )] P(ε1 − ε 2 + eV )

P( E ) ∝ ∫ dt exp( J (t ) + iEt / )

           d ω Re[ Z (ω )] β ω
J (t )   ∫ ω RK [coth 2 (cos(ωt ) − 1) − isin(ωt )]


                                                                       11
Odintsov, Bubanja and Schön, Phys. Rev. B, 46, 6875



                                                      12
Odintsov, Bubanja and Schön, Phys. Rev. B, 46, 6875
Zorin et al., J. Appl. Phys. 88, 2665.

                                                      13
EU Project COUNT: R-pump

                                                                  4j-2p
Tr-3p     T+           T-           G2         Drain       G3


          G1    Sou G2 G4                      T+ G T-      G3
 T+                                                                G1
          G3                                                G1
          T-      5j+Tr
               (Pad No.1)
                                              4j+Tr         Sou
G
          G                                   Pad No.2) G2         Source

           T+
                               5j        4j

                                    4j

G1                             3j        4j
                                                                   T+
         SL_KPN3
                                                            T+
Source
         G1
                  3j+Tr                       4j+Tr    G
                                                                   G
               (Pad No.4)                     (Pad No.3))
         Sou                                                T-

G2                                                                 T-
         G2       T-   G T+                    G2 Sou G1    G3


3j-2p     Drain        G2     Source           G1          G3     4j+Tr
                                                            (Pad No.5)


                              Lotkhov et al, Appl. Phys. Lett. 78, 946 (2001)

                                                                                14
005
           .7


           00
            .5


          005
           .2



-.7 -.5 -.2
 005 00  005     005
                  .2   00
                        .5   005
                              .7

          -.2
           005


          -.5
           00


          -.7
           005




                                   15
Quantum Metrological Triangle

     h
V =n    f          f
     2e                   I = ef
                                   R-pump
Josephson Effect       SET         LNE, France


    V      Quantum Hall
                               I
              Effect

   1 h
= = 1,2,...)
 V    2
        I (n
   ne


                                                 16
005
           .7


           00
            .5


          005
           .2



-.7 -.5 -.2
 005 00  005     005
                  .2   00
                        .5   005
                              .7

          -.2
           005


          -.5
           00


          -.7
           005




                                   17
Elastic cotunneling




                      18
19
20
21
22
23
Current through the system:

                   I = 〈 S −1 (t , −∞) I (t ) S (t , −∞)〉
                                       ˆ

                                              1+ 2 z
                  1                eV 
  I=                                    
     (2π ) 2 Γ(2 + 2 z )e 4ν Ω 0  Ω 0              ∫ d d  F ( ) F ( )
                                                                α           β     α        β



              ×∫ d x1dx 2 g1 (x1 ) g 2 (x 2 ) ∫ dte
                                                       i ( α −β ) t / 
                                                                            P(x1 ,0; x 2 ,| t |)


                         2C1C2 z E1 +  
  F ( ) = 1, 2 +
         [1 − f ( )]U               ,       
                        (C1 + C2 ) Ω 0 
                                   2



                                               2C1C2 z E2 −  
                             − f ( )U 1, 2 +             ,   
                                              (C1 + C2 ) Ω 0 
                                                         2




Bubanja, Phys. Rev. B 78, 155423 (2008)

                                                                                                   24
Outline


• Metallic islands
• Superconducting islands
• Solid state entanglers

         Summary




                            25
Hybrid SET transistor



     N        S         N

                                  A
         CG
VL                           VR
         VG




                                      26
Pekola et al, Nature Physics 4, 120 (2008)

                                             27
28
Motivation:

Averin and Pekola, Phys. Rev. Lett. 101, 066801 (2008).
Achievable error rates: 10-6 – 10-7.
Therefore NISIN transistor is not suitable for metrology.




                                                            29
30
Z(ω)




       31
Nucleon pairing




                  32
There is a quasiparticle on the island when gate voltage is adjusted so that:




                                                                                33
Ec



Δ




     34
35
36
37
In the resolvent formalism current can be expressed as:




                                                          38
Conclusion: promising for metrology, 10-8 can be achieved!
     Bubanja, Phys. Rev. B 83, 195312 (2011)
                                                             39
Outline


• Metallic islands
• Superconducting islands
• Solid state entanglers

         Summary




                            40
NS interface


• Andreev reflection



• Crossed Andreev reflection




                               41
Nonlinear optics




Regular mirror   Phase conjugating mirror


                                            42
43
J. Feinberg, Opt. Lett. 7, 486 (1982)
                                        44
e
N       I   N   e   S
    e
            h




                        45
Bogoliubov-de Gennes approach

                    1     e
= ∑ ∫ d r Ψσ (r )[
H BCS             3
                      ( ∇ − A(r )) 2 + U (r ) − µ ]Ψσ (r )
                       †

      σ            2m i    c
       + ∫ d 3 r [∆(r ) Ψ † (r )Ψ † (r ) + ∆* (r )Ψ ↓ (r )Ψ ↑ (r )]
                          ↑       ↓

 ∆(r ) = (r ) Ψ ↓ (r )Ψ ↑ (r )
       −g
 {Ψσ (r ), Ψσ ' (r ')}+ δσ ,σ 'δ (r − r ')
            †
                      =




                                                                      46
∆( x) = ∆ Θ( x); U ( x) = U 0δ ( x); Z = mU 0 /  2 k F


            A            Z=0                       A              Z=1



                                                                    B
    B

                              E/∆                                   E/∆

           A: Probability of Andreev reflection
           B: Probability of ordinary reflection
Blonder, Tinkham, and Klapwijk: Phys. Rev. B 25, 4515 (1982)

                                                                          47
Cross-correlations measurement




                                  Solid-state entangler


Wei & Chandrasekhar, Nature Physics 6, 494 (2010)


                                                          48
Experimental and theoretical results of voltage noise power at 0.4K, 0.3K, and 0.25K

     Wei & Chandrasekhar, Nature Physics 6, 494 (2010)
                                                                                       49
Circuit influence on entanglement current




                                            50
51
52
Bubanja and Iwabuchi, Phys. Rev. B 84, 094501 (2011)


                                                       53
Outline


• Metallic islands
• Superconducting islands
• Solid state entanglers

         Summary




                            54
Summary

• We have developed theories of electron transport in:
  semiconducting QD’s, metallic, superconducting islands,
  and carbon nanotubes taking into account charging as well
  as the effects of the electromagnetic environment.

• Applications include most accurate SET devices and their
  use in metrology, computing and sensing.




                                                              55

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13.30 o2 v bubanja

  • 1. METROLOGY WITH SINGLE ELECTRONS VLADIMIR BUBANJA 1
  • 3. Single Electronics M.C. Esher 3
  • 4. Single Electronics M.C. Esher 4
  • 5. Outline • Metallic islands • Superconducting islands • Solid state entanglers Summary 5
  • 6. Outline • Metallic islands • Superconducting islands • Solid state entanglers Summary 6
  • 7. 7
  • 8. 8
  • 9. 9
  • 10. Hamiltonian of the system: H H 0 + HT , = =H0 ∑ i=S ,I ,D H i + H env ∑ (l  H i = + eVi )cl†,i cl ,i ,(i = l S , D) =HI ∑α α cα cα + Q 2 / 2CΣ † H env = ∑ ωα bα bα † α H T = H T 2 , H Ti = H i− , HT 1 + H i+ + =H1+ ∑ = ( H i+ )† Tα p cα (t )c p (t )e − iϕ1 ( t ) , H i− α,p † 10
  • 11. Inelastic cotunneling γ ∝ ∫ d ε1 ∫ d ε 2 Γ1 (ε1 + eV1 ) Re[ D(ε1 , ε 2 )] Γ 2 (ε 2 + eV2 ) Γi (eV ) ∝ ∫ d ε1 ∫ d ε 2 f (ε1 )[1 − f (ε 2 )] P(ε1 − ε 2 + eV ) P( E ) ∝ ∫ dt exp( J (t ) + iEt / ) d ω Re[ Z (ω )] β ω J (t ) ∫ ω RK [coth 2 (cos(ωt ) − 1) − isin(ωt )] 11
  • 12. Odintsov, Bubanja and Schön, Phys. Rev. B, 46, 6875 12
  • 13. Odintsov, Bubanja and Schön, Phys. Rev. B, 46, 6875 Zorin et al., J. Appl. Phys. 88, 2665. 13
  • 14. EU Project COUNT: R-pump 4j-2p Tr-3p T+ T- G2 Drain G3 G1 Sou G2 G4 T+ G T- G3 T+ G1 G3 G1 T- 5j+Tr (Pad No.1) 4j+Tr Sou G G Pad No.2) G2 Source T+ 5j 4j 4j G1 3j 4j T+ SL_KPN3 T+ Source G1 3j+Tr 4j+Tr G G (Pad No.4) (Pad No.3)) Sou T- G2 T- G2 T- G T+ G2 Sou G1 G3 3j-2p Drain G2 Source G1 G3 4j+Tr (Pad No.5) Lotkhov et al, Appl. Phys. Lett. 78, 946 (2001) 14
  • 15. 005 .7 00 .5 005 .2 -.7 -.5 -.2 005 00 005 005 .2 00 .5 005 .7 -.2 005 -.5 00 -.7 005 15
  • 16. Quantum Metrological Triangle h V =n f f 2e I = ef R-pump Josephson Effect SET LNE, France V Quantum Hall I Effect 1 h = = 1,2,...) V 2 I (n ne 16
  • 17. 005 .7 00 .5 005 .2 -.7 -.5 -.2 005 00 005 005 .2 00 .5 005 .7 -.2 005 -.5 00 -.7 005 17
  • 19. 19
  • 20. 20
  • 21. 21
  • 22. 22
  • 23. 23
  • 24. Current through the system: I = 〈 S −1 (t , −∞) I (t ) S (t , −∞)〉 ˆ 1+ 2 z 1  eV  I=   (2π ) 2 Γ(2 + 2 z )e 4ν Ω 0  Ω 0  ∫ d d  F ( ) F ( ) α β α β ×∫ d x1dx 2 g1 (x1 ) g 2 (x 2 ) ∫ dte i ( α −β ) t /  P(x1 ,0; x 2 ,| t |)  2C1C2 z E1 +   F ( ) = 1, 2 + [1 − f ( )]U ,   (C1 + C2 ) Ω 0  2  2C1C2 z E2 −   − f ( )U 1, 2 + ,   (C1 + C2 ) Ω 0  2 Bubanja, Phys. Rev. B 78, 155423 (2008) 24
  • 25. Outline • Metallic islands • Superconducting islands • Solid state entanglers Summary 25
  • 26. Hybrid SET transistor N S N A CG VL VR VG 26
  • 27. Pekola et al, Nature Physics 4, 120 (2008) 27
  • 28. 28
  • 29. Motivation: Averin and Pekola, Phys. Rev. Lett. 101, 066801 (2008). Achievable error rates: 10-6 – 10-7. Therefore NISIN transistor is not suitable for metrology. 29
  • 30. 30
  • 31. Z(ω) 31
  • 33. There is a quasiparticle on the island when gate voltage is adjusted so that: 33
  • 34. Ec Δ 34
  • 35. 35
  • 36. 36
  • 37. 37
  • 38. In the resolvent formalism current can be expressed as: 38
  • 39. Conclusion: promising for metrology, 10-8 can be achieved! Bubanja, Phys. Rev. B 83, 195312 (2011) 39
  • 40. Outline • Metallic islands • Superconducting islands • Solid state entanglers Summary 40
  • 41. NS interface • Andreev reflection • Crossed Andreev reflection 41
  • 42. Nonlinear optics Regular mirror Phase conjugating mirror 42
  • 43. 43
  • 44. J. Feinberg, Opt. Lett. 7, 486 (1982) 44
  • 45. e N I N e S e h 45
  • 46. Bogoliubov-de Gennes approach 1  e = ∑ ∫ d r Ψσ (r )[ H BCS 3 ( ∇ − A(r )) 2 + U (r ) − µ ]Ψσ (r ) † σ 2m i c + ∫ d 3 r [∆(r ) Ψ † (r )Ψ † (r ) + ∆* (r )Ψ ↓ (r )Ψ ↑ (r )] ↑ ↓ ∆(r ) = (r ) Ψ ↓ (r )Ψ ↑ (r ) −g {Ψσ (r ), Ψσ ' (r ')}+ δσ ,σ 'δ (r − r ') † = 46
  • 47. ∆( x) = ∆ Θ( x); U ( x) = U 0δ ( x); Z = mU 0 /  2 k F A Z=0 A Z=1 B B E/∆ E/∆ A: Probability of Andreev reflection B: Probability of ordinary reflection Blonder, Tinkham, and Klapwijk: Phys. Rev. B 25, 4515 (1982) 47
  • 48. Cross-correlations measurement Solid-state entangler Wei & Chandrasekhar, Nature Physics 6, 494 (2010) 48
  • 49. Experimental and theoretical results of voltage noise power at 0.4K, 0.3K, and 0.25K Wei & Chandrasekhar, Nature Physics 6, 494 (2010) 49
  • 50. Circuit influence on entanglement current 50
  • 51. 51
  • 52. 52
  • 53. Bubanja and Iwabuchi, Phys. Rev. B 84, 094501 (2011) 53
  • 54. Outline • Metallic islands • Superconducting islands • Solid state entanglers Summary 54
  • 55. Summary • We have developed theories of electron transport in: semiconducting QD’s, metallic, superconducting islands, and carbon nanotubes taking into account charging as well as the effects of the electromagnetic environment. • Applications include most accurate SET devices and their use in metrology, computing and sensing. 55