for presenting students only:) a clear concept and useful for 10 minute presentation. images that helps you to discribe the slides. have fun:) keep remember that this is basic concepts so i preffer it for MCA andCE students only. thank you.

1. By – Mohit Patel

2. Introduction
• Non-volatile
– Information is saved even when there is no power
• Immediate boot up
– No need to wait for your computer to boot up
• MRAM, SRAM and DRAM
– MRAM is potentially capable of replacing both DRAM,
SRAM and many advantages over technology currently
used in electronic devices

3. • DRAM
– Advantages: cheap
– Disadvantages: Comparatively slow and loses data when
power is off
• SRAM
– Advantages: fast
– Disadvantages: cost up to 4 times as much as DRAM and
loses data when power is off
• Flash memory
– Advantages: save data when power is off
– Disadvantages: saving data is slow and use lot of power

4. • Power efficiency
– MRAM can be the most efficient memory device in power
consumption
• Ferro-magnet
– Ferro-magnet is the type of material used to create a MTJ
to develop MRAM

5. Historical Overview
Why MRAM Became an Important Research Topic
◦ Universal Memory (Computing & Electronics)
◦ “Instant-On” Computing
◦ Read & Write to Memory Faster
◦ Reduced Power Consumption
◦ Save Data in Case of a Power Failure
Modern MRAM Technology Emerged from Several
Technologies :
◦ Magnetic Core Memory
◦ Magneto resistive RAM
◦ Giant Magneto resistance

6. What is MRAM?
• Magnetic RAM is a methods of storing data bits
using magnetic charges instead of the electrical
charges .
• MRAM is a memory (RAM) technology that uses
electron spin to store information. MRAM has been
called "the ideal memory", potentially combining the
density of DRAM with the speed of SRAM and non-
volatility of FLASH memory or hard disk, and all this
while consuming a very low amount of power.
• MRAM can resist high radiation, and can operate in
extreme temperature conditions, very suited for
military and space applications.

7. History of MRAM
• 􀂀 1988 – Giant magneto resistive effect is discovered
• 􀂀 1989 - IBM makes breakthroughs in the giant magneto resistive effect in thin-film
• structures
• 􀂀 1995 – Free scale creates first MRAM chip as part of a DARPA initiative
• 􀂀 1997 – IBM releases first commercially available spin valve in hard drive read head
• 􀂀 2000 – IBM and Infineon form join MRAM development program
• 􀂀 2003 – an initial 128Kbit MRAM chip is made with 180nm lithographic process
• 􀂀 2004 – 16Mbit prototype manufactured by Infineon
• 􀂀 Sept 2004 – Free scale begins offering MRAM
• 􀂀 Nov 2005 – Rennes's Tech and Grandis develop 65 nm MRAM using spin torque
• transfer
• 􀂀 Dec 2005 – Free scale demos MRAM which uses magnesium oxide which reduces
• required write currents
• 􀂀 Feb 2006 – Toshiba and NEC announce 16Mbit chip with 200 MB/s transfer rate, 34ns
• cycle time, 78.5 mm2 size, and low 1.8V requirement
• 􀂀 Nov 2007 – NEC makes SRAM compatible MRAM with 250MHz speed
• 􀂀 Aug 2008 – German scientists develop MRAM with write cycles under 1ns
• 􀂀 Mar 2011 – PTB announces write cycles under 500ps (2GBit/s)

8. How its work internally?
• The 2 Possible Magnetization States of a
Ferromagnetic Element can be Described by a
Hysteresis Loop
• Magnetization of Film vs. Magnetic Field
• A magnetic field, with magnitude greater than
the switching field, sets magnetization in
direction of applied field

9. MRAM Device
Bit cells arranged in array:
• Reading: Transistor of the
selected bit cell turned
‘on’ + current applied in
the bit line
• Writing: Transistor of the
selected bit cell turned
‘off’ + currents applied in
the bit and word lines

10. MRAM Reading & Writing Process
• MRAM Utilizes a Wire
Directly Over &
Magnetically Coupled to
the Magnetic Element
• A Current Pulse Traveling
Down the Wire Creates a
Magnetic Field Parallel to
the Wire
• Each Cell is Inductively
Coupled with a Write Wire
From a Row & a Column

11. Reading A Bit :
• Measurement of the bit cell resistance by applying a
current in the ‘bit line’
• Comparison with a reference value mid-way between
the bit high and low resistance values
Writing A Bit :
• Currents applied in both lines
2 magnetic fields
Polarity of current in the bit lines decides value stored

12. DRAM
• DYNAMIC random access memory
• Slow
• Needs to be refreshed, hence dynamic

13. FRAM
• Structurally similar to DRAM
• Ferroelectric film made of PZT
• Nonvolatile
• Fast read/write times

14. SRAM
• STATIC random access memory
• Faster, more reliable than DRAM
• Need not be refreshed, hence static
• Expensive, used in CPU cache

15. FLASH MEMORY
• Non-volatile
• NOR and NAND
• Does not need to be refreshed

16. Advantages & Disadvantages
Advantages :
• MRAM will eliminate the boot up time
• Electronic devices will be more power efficient
• It could enable wireless video in cell phones
• More accurate speech recognition
• MP3, instead of hundred on songs, MRAM will enable
thousand of songs and movies
• No worry for unsaved document when power goes out
• In the powerful computer servers that will run the web
it could mean faster surfing, and easier download
• More memory space will be available to us
• More reliable electronics will be available to us
• high bandwidth and low latency

17. Advantages comparing with other RAMs
fast speed cheap dense
non-
volatile
consume
low
power
no need to
refresh
FLASH √ √
SRAM √ √
DRAM √ √
MRAM √ √ √ √ √ √

18. Disadvantages :
• Heat Problem
• EMI Problem
• Bit Flip

19. Applications
• Digital camera
• Cellular phones
• PDA
• Palm pilot
• MP3
• HDTV
• Laptops
• PCs

20. References
• http://www.mram-info.com/companies.html
• Http://computer.howstuffworks.com/ram.htm
• http://www.williams-adv.com/tools/mram-
technology-review.php
• https://www.futureelectronics.com/en/memo
ry/mram.aspx

21. YOU MAY ASK…..