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2. MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-
FET, or MOS FET) is a type of transistor used for amplifying or switching
electronic signal.
Although the MOSFET is a four-terminal device with source (S), gate (G),
drain (D), and body (B) terminals, the body (or substrate) of the MOSFET
is often connected to the source terminal, making it a three-terminal
device like other field-effect transistor. Because these two terminals are
normally connected to each other (short-circuited) internally, only three
terminals appear in electrical diagrams. The MOSFET is by far the most
common transistor in both digital and analog circuits, though the bipolar
junction transistor was at one time much more common.

3. Composition
Usually the semiconductor of choice is silicon, but some chip
manufacturers, most notably IBM and Intel, recently started using
a chemical compound of silicon and germanium in MOSFET channels.
Unfortunately, many semiconductors with better electrical properties
than silicon, such as gallium arsenide, do not form good semiconductor-
to-insulator interfaces, and thus are not suitable for MOSFETs. Research
continues on creating insulators with acceptable electrical
characteristics on other semiconductor material.

4. What is the body effect in MOSFET?
NMOS consist of p type substrate and n type channel. If p
substrate is at 0 V then the body effect is not present if it is at
negative voltage then the holes in the p substrate gets attracted
towards the negative voltage and leaves negative ions to satisfy
space charge neutrality because of this extra negative ions the
thickness of the depletion layer will be increased thus the
threshold voltage is increased.

5. BODY EFFECT
You might have forgotten, but a transistor is a 4-terminal device. Gate, drain
and source are the 3 terminals that are used to control the transistor, but the
bulk or body, if not properly biased, may put the transistor inoperable

6. The p-n junctions defined by source-bulk and drain-bulk, which are
basically two diodes, must be reverse-biased to stop them from leaking
current from the source/drain to the substrate. That means that the source
potential must always be equal or greater than the bulk potential. Since
drain voltage is always greater or equal than source voltage, we don't even
consider the drain-bulk junction.

7. The Difference Between NMOS & PMOS
• NMOS is built with n-type source and
drain and a p-type substrate.
• NMOS, carriers are electrons
• When a high voltage is applied to the
gate, NMOS will conduct
• When a low voltage is applied in the
gate, NMOS will not conduct
• NMOS are considered to be faster
than PMOS, since the carriers in
NMOS, which are electrons, travel
twice as fast as holes.
• NMOS ICs would be smaller than
PMOS Ics.
• NMOS represents N type MOS
transistor.
• PMOS is built with p-type source and
drain and a n-type substrate.
• PMOS, carriers are holes.
• When a high voltage is applied to the
gate, PMOS will not conduct
• When a low voltage is applied in the
gate, PMOS will conduct
• Which are the carriers in PMOS.
• PMOS devices are more immune to
noise than NMOS devices.
• PMOS represents P type MOS
transistor