ALD/CVD APPLICATIONS, EQUIPMENT AND PRECURSORS IN HIGH VOLUME MANUFACTURING EFDS ALD for Industry 2019, Berlin 19-20 Marck 2019

1. © Fraunhofer
ALD/CVD APPLICATIONS, EQUIPMENT AND PRECURSORS IN
HIGH VOLUME MANUFACTURING
EFDS ALD for Industry 2019, Berlin 19-20 Marck 2019
Jonas Sundqvist
1

2. © Fraunhofer
Recap - Introduction of ALD in 300 mm HVM
200mm

3. © Fraunhofer
CMC Seminar / ICMtia Joint Conf 10/2018
The driver behind ALD & CVD
300mm Equipment fab invest

4. © Fraunhofer 4
 VLSI Research report well above
average growth for ASML (NL),
Tokyo Electron (JPN), Advantest
(JPN), Kokusai (JPN), Daifuku
(JPN) and Canon (JPN) so a big
win for Japan and the
Netherlands last year. All
Japanese companies
outperform the market growth
2018!
 Judging by ASMI, TEL and
Kokusai it seems that ALD was
able to capture all of the growth
in 2018 and maybe a bit more.

5. © Fraunhofer
ALD Equipment Market <25% of the total CVD Wafer Equipment market
 Tokyo Electron has passed ASM in revenue 2017
 90% of the market is 300mm wafer processing
equipment
 TEL and Hitachi Kokusai dominates Large Batch ALD
 300 mm Spatial ALD and Multi wafer tools continues
taking market shares vs. Single wafer & Large Batch
5
25%
24%
16%
11%
7%
5%
3%
9%
ALD Equipment Market Estimate 2017
US$ 1.8 to 1.9 B
(Semi, PV, Display, MEMS, R&D)
Tokyo Electron
ASM International
Hitachi Kokusai Electric
Lam Research
Wonik IPS
Jusung Engineering
Applied Materials
Other
Estimate for 2018 is >US$ 2.0 B
2017 & 2018 Japanese Companies are growing in ALD
(Tokyo Electron and Kokusai)

6. © Fraunhofer
Trend in IP Filing for Spatial ALD
0%
5%
10%
15%
20%
25%
30%
35%
IP Applications for Spatial ALD
Source: Fraunhofer IKTS

7. © Fraunhofer
Trend in IP Filing for Spatial ALD
0%
5%
10%
15%
20%
25%
30%
35%
IP Applications for Spatial ALD
TEL NT333 for thermal and plasma
ALD of SiO2, SiN, High-k

8. © Fraunhofer
High productivity Single Wafer Platform - ASM XP8 and XP8 QCM
Quad chamber modules (QCMs) 30, 32, 34, and 36 are connected to
four side surfaces of the vacuum chamber 22. Each QCM is a module
having four reactor chambers (RC1 to RC4). Processing such as
plasma film forming processing is performed on a substrate in each
reactor chamber. (ASM Patent application US20170278074A1)
The new ASM XP8 QCM up to 16 chamber ALD/CVD
tool

9. © Fraunhofer
Wafer forecast – growth drivers for ALD & CVD
For more information on TECHCET’s Wafer reports
please go to www.techcet.com
CMC Seminar / ICMtia Joint Conf 10/2018, Ningbo
 Advanced logic benefits as 10 nm followed
by 7 nm moves from qualification into
production
 Multiple patterning (SADP, SAQP) for logic
and memory
 Completion of the NAND to 3D-NAND
transition as 3D will account for 2/3 of the
capacity in 2018 (VLSI Research, April
2018)
 Continued high demand for DRAM
 China investments in new Fabs and
expansions continue for logic and memory
 Niche memory technologies like spin-
transfer torque MRAM (STT-MRAM),
Resistive RAM (RRAM), Ferroelectric FET
(FeFET) and RAM (FRAM), and Cross-Point
memory will grow over the coming 5 years

10. © Fraunhofer
Dielectric & High-k Materials IP Trends
10
0
200
400
600
800
1000
1200
1400
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
1993
1994
1995
1996
1997
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
2018
High-k Material IP (Applications)
Al2O3 TiO2 HfO2 ZrO2 REO STO, BST etc. Ta2O5 Total
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
1993
1994
1995
1996
1997
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
2018
Dielectric & High-k Process IP (Applications)
CVD PECVD ALD SOD PVD Total Dielectric Deposition
Al2O3
TiO2
HfO2
ZrO2REO
STO, BST, PZT
Ta2O5
ALD
PECVD
CVD
SOD
PVD
Ta2O5, SrTiOx, BaSrTiOx and PZT 15 to 20 years ago.
Today most IP concerning the metaloxides of Al, Hf, Ti, Zr
and Rare Earth elements (SiO2 and SiN excluded)
ALD and PECVD are domianting filed IP in deposition of
dielectrics and high-k dielectrics (includeing SiO2 and SiN)
Source: Fraunhofer IKTS

11. © Fraunhofer
FinFET logic at the 10/7 nm node
Intel
10 nm
TSMC
7 nm
Samsung
7 nm
Globalfoundries
7 nm
Process Name P1276 (CPU), P1277
(SoC)
7FF, 7FF+, 7HPC 7LPE 7LP
1st Production 2018 1Q/2018 2019 Cancelled
Lithography 193 nm Immersion 193 nm Immersion
/EUV
EUV 193 nm Immersion
Exposure SAQP SAQP/SE SE SAQP
Contacted Gate
Pitch (CPP)
54 54 54 56
Minimum Metal
Pitch (MMP)
36 40 36 40
Source : WikiChip

12. © Fraunhofer
Multiple patterning Critical Materials Conference, April 26-27, Phoenix AZ
David Bloss, Vice President, Technology Manufacturing Group and Director of
Lithography Technology Sourcing, Intel Corporation

13. © Fraunhofer
Multiple patterning
Critical Materials Conference, April 26-27, Phoenix AZ
David Bloss, Vice President, Technology Manufacturing Group and Director of
Lithography Technology Sourcing, Intel Corporation

14. © Fraunhofer
Lithography beyond 7nm for <24nm pitch
 No single lithography technology can create <24nm
pitch patterns in a single pass except for direct-write
e-beam which is too slow and expensive for HVM.
 Multi-patterning process flows can be scompared by
Cost Per Wafer Pass (CPWP), a term defined as the
cost-of-ownership (CoO)
Modeling for the evaluation of alternate 1D and 2D
patterning paths
Source: Ed Korczynski, TECHCET
CMC Conference 2018, April 27 2018, Phoenix
ALD

15. © Fraunhofer
Alternatives – Directed self assembly (DSA)
IBM Research at Albany NanoTech, TEL Technology Center, America in Albany, GlobalFoundries, and IBM
Research TJ Watson in Yorktown Heights and IBM Research Almaden, San Jose.
Nature Electronics volume 1, pages562–569 (2018)
ALD
ALD ALD

16. © Fraunhofer
Leading Semiconductor Materials Suppliers ($M’s)
Source:
TECHCET Critical Materials
Reports™
Excluding Silicon Wafers
0
200
400
600
800
1000
1200
1400
1600
1800
UpChem
Hayward
Tokuyama
Entegris
KFMI
Ferrotec
AZ/Merck
WonikQP
AsahiGlass
Wonik
Kyocera
DongWoo
Avantor
MacDermid
Kanto
Adeka
Fujimi
KMG
Honeywell
NGK
Heraeus/Shin-Etsu
Heraeus/Shin-Etsu
Tosoh
BASF
JXNippon
CoorsTek
AirProducts
Hitachi
TNSC-Matheson
Shin-Etsu-PR
TokyoOhkaKogyo
Sumitomo
Cabot
Versum
DowChem
Fujifilm
JSR
AirLiquide
Linde/Praxair
Leading Materials Suppliers 2017 Revenue / Ranking
Ceramics Quartz Gases Precursors/SOD Photoresists/Anc. CMP Targets Wet Chem/Cleans Metal Chemicals
CMC Seminar / ICMtia Joint Conf 10/2018, Ningbo
Bulk/Rare
Gases
7%
Spec Gas
16% Liquide
Precursors
5%
Sputter
Targets
3%
Metal
Chemicals
(FE)
2%
Wet
Chemicals
8%CMP Pads &
Slurry
13%
Photoresists /
Ancillaries
27%
Eqt Parts: CMP
4%
Eqt Parts: Si
3%
Eqt Parts:
Quartz
5%
Eqt Parts: SiC /
Ceramics
7%

17. © Fraunhofer
Cobalt applications and requirements
BEOL Cu metalliza on: 22nm →
Co capping layer
✓ Prevents Cu EM
Co liner
✓ Improve wettability
✓ Prevents voids
Source: Applied Materials Inc.
http://www.appliedmaterials.com/products/endura-volta-cvd-cobalt
Challenges
• Conformality, void-free deposition
• Contact resistance
MOL contact fill: <10nm →
Cu
Low-k
Co liner
Co cap
Barrier
Seed
Source: Applied Materials Inc.
Challenges for <10nm integration
• Conformality (low stability precursors)
• Adhesion becomes more challenging
• Selectivity

18. © Fraunhofer
Cobalt IP Filing Trends for Chemical Compounds
Increased filing activity for Cobalt chemical compounds starting
2012. Applications focusing on Li-batteries & Electronic
applications (Plating chemicals, Precursors)
2012
Prices for Cobalt cathodes have increased by 60%
in 2017 but appear to be stabilized but volatile.

19. © Fraunhofer
Cobalt IP Filing Trends for Chemical Compounds
Increased filing activity for Cobalt chemical compounds starting
2012. Applications focusing on Li-batteries & Electronic
applications (Plating chemicals, Precursors)
2012
Prices for Cobalt cathodes have increased by 60%
in 2017 but appear to be stabilized but volatile.
Higher demand from Cobalt use in Electric Vechicles

20. © Fraunhofer
ALD/CVD Metal & High-k Precursors
20
TECHCET Critical Materials Report(TM)
 The combined markets for ALD and CVD
metal precursors are estimated to be
approximately US$460M 2018 and above
US$620M by 2023.
 Average long term CAGR of 8% over 2013
to 2023

21. © Fraunhofer
ALD/CVD/SOD Dielectric Precursors
 Dielectric precursors show growth in all
segments for the next 5 years reaching
US$660 in 2023 M
 As for metal precursors, the market has over
an extended period of time had a double digit
growth and we expect the market to continue
to develop as the transition to 10 nm and
7 nm node logic and 3D-NAND take place with
an average long term CAGR of 9% over 2015
to 2023
21
TECHCET Critical Materials Report(TM)

22. © Fraunhofer
Competeing Industries
Competing industries for ALD precursors and the most important industries in high volume manufacturing today are:
 Non-Semi Wafer based (e.g. MEMS and LED)
 QD-OLED and AMOLED Flexible display
 Photovoltaic
 R&D Equipment
22
From an ALD equipment perspective these markets account for 10 to
15% of the total annual revenue for ALD equipment (US$ 1.8 to 1.9 B).
NCD Cluster system for Lucida™ GD series
OLED Encapsluation
6G half (1500mmX925mm)

23. © Fraunhofer
PV – Back side passivation for PERC cells driving
TMA use in PECVD & ALD
Equipment & Process Market Share Estimate (%)
OEM Process
TMA
consumption
[mg / wafer]
2017 2018 2020 2022 2025 2028
Fullshare PECVD 9
90 92 86 87 87 83Centrotherm PECVD
5
Meyer Burger PECVD
2.9
Ideal Energy ALD
4
6 6 11 12 13 16
SoLayTec ALD 3
NCD ALD 2
Levitech Spatial ALD 1.6
Leadmicro Spatial ALD 1
Other PECVD SiNx n/a 4 2 2 1 0 0
23
TMA consumption and Al2O3 thickness for APCVD, PECVD and ALD Tools (Adapted from
TaiyangNews 2018).
The low TMA consumption is a reason why ALD tools
are slowly taking market share from PECVD, especially
in China

24. © Fraunhofer
MEMS
In MEMS applications that consist of numerous 3D structures, narrow cavities
and the need of conformal coatings even in large buried structures ALD is
optimal for deposition in of layers with very specific properties or combination
thereof:
Large volume of MEMS for Smartphone market (Gyro, Sensors, Speakers, Microphones)
Leading MEMS and companies have implemented ALD i HVM
o Diffusion barriers
o Adhesion layers
o Charge dissipative layers
o Layers lowering frictional wear
o Optical layers
o Coatings for hermetical sealing
o Hydrophobic layers to decrease stiction
o Conformal, thermally conductive layers
o Conductive seed layers for plating purposes
o Etch masks and etch stop layers
o Conformal, electrically insulating layers

25. © Fraunhofer
New 200 mm ALD Wafer Cluster Tools
Picosun
Singel Wafer
Mini Batch
Veeco
Mini Batch
Beneq
Mini Batch
Oxford Instruments
PlasmaPro Cluster PECVD, ALD & ALE

26. © Fraunhofer 26
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