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Presented By:
Jeevan M. Vas
4SF10EC035
CONTENTS
 INTRODUCTION
 FEATURES
 WORKING
 OPERATION
 APPLICATIONS
 BENEFITS
 CONCLUSION
 REFERENCES
3/27/2014 2Dept. of E & C, SCEM
Introduction
 Every person with a basic knowledge of electronics would
be familiar with the three fundamental circuit elements —
RESISTOR
CAPACITOR
INDUCTOR
These three elements are defined by the relation between
two of the four fundamental circuit variables — current,
voltage, charge and flux.
 But, Leon Chua discovered a fourth fundamental circuit
element which he named as
MEMRISTOR [MEMORY + RESISTOR]
3/27/2014 3Dept. of E & C, SCEM
What is a MEMRISTOR
Memristor is really a MEMory ResISTOR
Memristor can be defined as a two terminal device
which shows the relation between magnetic flux and
charge
3/27/2014 4Dept. of E & C, SCEM
Contd..
 A Memristor is a semiconductor whose resistance varies
as a function of flux and charge. This allows it to
“remember” what has passed through the circuit.
 Characterized by Memristance.
The flux between the two terminals is a function of the
amount of electric charge q that has passed through the
device .
Ø=f(q)
3/27/2014 5Dept. of E & C, SCEM
Features of Memristor
• Retain its resistance level even after power had
been shut down.
• Remember (or recall) the last resistance it had,
before being shut off.
•“Remember” how much current has pass through it.
3/27/2014 6Dept. of E & C, SCEM
•Microscopic image shows 17 memristors sandwiched between
a single bottom wire that makes contact with one side of the
device and a top wire that contacts the opposite side.
•The devices act as ‘memory resistors’
3/27/2014 7Dept. of E & C, SCEM
Physical analogy for a memristor
•Resistor is analogous to a pipe of fixed diameter
through which water is flowing.
•Water(charge q), input pressure(voltage V), rate of
flow of water(current I).
•Resistance depends on diameter.
•Memristor is analogous to a special kind of pipe
that expands or shrinks when water flows through
it.
3/27/2014 8Dept. of E & C, SCEM
•If water pressure is turned off, pipe will retain its
most recent diameter, until water is turned back on.
3/27/2014 9Dept. of E & C, SCEM
Memristor Pipe
Charge Water
Conductance Cross sectional area
Potential Pressure
When water flows
in opposite
direction the
diameter decreases
(resistance
increases)
When water flows
in one direction
the diameter
increases
(resistance
decreases)
• The pipe is directive in nature.
3/27/2014 10Dept. of E & C, SCEM
Memristor and Resistor
•The way resistor has resistance, memristor has
memristance.
•Same unit -ohm.
•Memristor can be switched to different states.
•Memristor has non linear V-I plot.
3/27/2014 11Dept. of E & C, SCEM
Current Voltage characteristics of Resistor and
Memristor
3/27/2014 12Dept. of E & C, SCEM
Physics of the Device
=
V(t)=M(q(t))I(t)
3/27/2014 13Dept. of E & C, SCEM
Relation between charge, current, voltage and
magnetic flux to one another
3/27/2014 14Dept. of E & C, SCEM
Symmetry of Relationships
Memristors
Φ=Mq
Voltage(V) Current(I)
Charge(q) Flux (Φ)
Φ = Li
v=dΦ/dt i=dq/dt
Resistors
v=Ri
q=Cv
3/27/2014 15Dept. of E & C, SCEM
In 2008 experimental solid state version was reported by R. Stanley
Williams of Hewlett Packard (HP)
Leon Chua
R. Stanley Williams
3/27/2014 16Dept. of E & C, SCEM
Appearance of Memristor
Crossbar architecture and magnified memristive switch having
platinum electrodes and 2 layers of TiO2
3/27/2014 17Dept. of E & C, SCEM
Crossbar array
• Array of perpendicular wires.
• Anywhere two perpendicular wires cross there is a
switch connecting them.
• To connect any horizontal wire to a vertical wire the
switch sandwiched between those two wires must be
closed.
• A crossbar array- a storage system.
3/27/2014 18Dept. of E & C, SCEM
Memristor Operation
(a) TiO2-x layer having oxygen deficiencies over insulating TiO2 layer.
(b) Positive voltage applied to top layer repels oxygen deficiencies in to
the insulating TiO2 layer below.
(c) Negative voltage on the switch attracts the positively charged oxygen
bubbles pulling them out of the TiO2.
3/27/2014 19Dept. of E & C, SCEM
PT PTTiOv(2-x)
TiO2
3
nm
2 nm
Oxidized
Reduced
(-)ve (+)ve
• Applied voltage makes the oxygen vacancies (+ve)
to shift towards the –ve voltage.
Working
3/27/2014 20Dept. of E & C, SCEM
• Shift between the layers is permanent in nature.
• It exist even after the voltage has been removed.
• Causes the permanent change in resistance.
• R(TiO2-x) < R(TiO2)
• When w=D, R =RON =Low
& when w=0, R=ROFF=High
Contd..
3/27/2014 21Dept. of E & C, SCEM
• No need of expensive retooling.
• Nanoimprint lithography.
Manufacturing
3/27/2014 22Dept. of E & C, SCEM
3/27/2014 23Dept. of E & C, SCEM
Applications
• As a switch.
• As a non volatile memory.
• Booting free computers.
• Can perform logic operations.
• In artificial neural networks.
3/27/2014 24Dept. of E & C, SCEM
Benefits
• Would allow for a quicker boot up since information is
not lost when the device is turned off.
• Hard Disk + RAM = MEMRISTOR.
• Uses less energy and produces less heat.
• As non-volatile memory, memristors do not consume
power when idle.
• Density allows for more information to be stored.
3/27/2014 25Dept. of E & C, SCEM
Conclusion
• It is sure that Memristor is going to
revolutionaries in the 21st century as radically as
the transistor in the 20th century.
• But Memristor will have to wait a few years like
transistor which had to wait almost a decade after
it’s invention for its popular applications.
3/27/2014 26Dept. of E & C, SCEM
References
1) Memristor resistance modulation for analog applications, Tsung
Wen Lee and Janice H Nickel IEEE, electron device letters, vol
33,oct2012.
2) Memristor applications for programmable analog ICs, Sangho Shin
and Kyungmin Kim, IEEE transactions on Nanotechnology, vol
10,2011.
3) Compact models for memristor based on charge flux constitutive
relationships, IEEE, 2010 IEEE Spectrum: The Mysterious Memristor
By Sally Adee.
3/27/2014 27Dept. of E & C, SCEM
3/27/2014 28Dept. of E & C, SCEM
3/27/2014 29Dept. of E & C, SCEM

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Memristor

  • 1. Presented By: Jeevan M. Vas 4SF10EC035
  • 2. CONTENTS  INTRODUCTION  FEATURES  WORKING  OPERATION  APPLICATIONS  BENEFITS  CONCLUSION  REFERENCES 3/27/2014 2Dept. of E & C, SCEM
  • 3. Introduction  Every person with a basic knowledge of electronics would be familiar with the three fundamental circuit elements — RESISTOR CAPACITOR INDUCTOR These three elements are defined by the relation between two of the four fundamental circuit variables — current, voltage, charge and flux.  But, Leon Chua discovered a fourth fundamental circuit element which he named as MEMRISTOR [MEMORY + RESISTOR] 3/27/2014 3Dept. of E & C, SCEM
  • 4. What is a MEMRISTOR Memristor is really a MEMory ResISTOR Memristor can be defined as a two terminal device which shows the relation between magnetic flux and charge 3/27/2014 4Dept. of E & C, SCEM
  • 5. Contd..  A Memristor is a semiconductor whose resistance varies as a function of flux and charge. This allows it to “remember” what has passed through the circuit.  Characterized by Memristance. The flux between the two terminals is a function of the amount of electric charge q that has passed through the device . Ø=f(q) 3/27/2014 5Dept. of E & C, SCEM
  • 6. Features of Memristor • Retain its resistance level even after power had been shut down. • Remember (or recall) the last resistance it had, before being shut off. •“Remember” how much current has pass through it. 3/27/2014 6Dept. of E & C, SCEM
  • 7. •Microscopic image shows 17 memristors sandwiched between a single bottom wire that makes contact with one side of the device and a top wire that contacts the opposite side. •The devices act as ‘memory resistors’ 3/27/2014 7Dept. of E & C, SCEM
  • 8. Physical analogy for a memristor •Resistor is analogous to a pipe of fixed diameter through which water is flowing. •Water(charge q), input pressure(voltage V), rate of flow of water(current I). •Resistance depends on diameter. •Memristor is analogous to a special kind of pipe that expands or shrinks when water flows through it. 3/27/2014 8Dept. of E & C, SCEM
  • 9. •If water pressure is turned off, pipe will retain its most recent diameter, until water is turned back on. 3/27/2014 9Dept. of E & C, SCEM
  • 10. Memristor Pipe Charge Water Conductance Cross sectional area Potential Pressure When water flows in opposite direction the diameter decreases (resistance increases) When water flows in one direction the diameter increases (resistance decreases) • The pipe is directive in nature. 3/27/2014 10Dept. of E & C, SCEM
  • 11. Memristor and Resistor •The way resistor has resistance, memristor has memristance. •Same unit -ohm. •Memristor can be switched to different states. •Memristor has non linear V-I plot. 3/27/2014 11Dept. of E & C, SCEM
  • 12. Current Voltage characteristics of Resistor and Memristor 3/27/2014 12Dept. of E & C, SCEM
  • 13. Physics of the Device = V(t)=M(q(t))I(t) 3/27/2014 13Dept. of E & C, SCEM
  • 14. Relation between charge, current, voltage and magnetic flux to one another 3/27/2014 14Dept. of E & C, SCEM
  • 15. Symmetry of Relationships Memristors Φ=Mq Voltage(V) Current(I) Charge(q) Flux (Φ) Φ = Li v=dΦ/dt i=dq/dt Resistors v=Ri q=Cv 3/27/2014 15Dept. of E & C, SCEM
  • 16. In 2008 experimental solid state version was reported by R. Stanley Williams of Hewlett Packard (HP) Leon Chua R. Stanley Williams 3/27/2014 16Dept. of E & C, SCEM
  • 17. Appearance of Memristor Crossbar architecture and magnified memristive switch having platinum electrodes and 2 layers of TiO2 3/27/2014 17Dept. of E & C, SCEM
  • 18. Crossbar array • Array of perpendicular wires. • Anywhere two perpendicular wires cross there is a switch connecting them. • To connect any horizontal wire to a vertical wire the switch sandwiched between those two wires must be closed. • A crossbar array- a storage system. 3/27/2014 18Dept. of E & C, SCEM
  • 19. Memristor Operation (a) TiO2-x layer having oxygen deficiencies over insulating TiO2 layer. (b) Positive voltage applied to top layer repels oxygen deficiencies in to the insulating TiO2 layer below. (c) Negative voltage on the switch attracts the positively charged oxygen bubbles pulling them out of the TiO2. 3/27/2014 19Dept. of E & C, SCEM
  • 20. PT PTTiOv(2-x) TiO2 3 nm 2 nm Oxidized Reduced (-)ve (+)ve • Applied voltage makes the oxygen vacancies (+ve) to shift towards the –ve voltage. Working 3/27/2014 20Dept. of E & C, SCEM
  • 21. • Shift between the layers is permanent in nature. • It exist even after the voltage has been removed. • Causes the permanent change in resistance. • R(TiO2-x) < R(TiO2) • When w=D, R =RON =Low & when w=0, R=ROFF=High Contd.. 3/27/2014 21Dept. of E & C, SCEM
  • 22. • No need of expensive retooling. • Nanoimprint lithography. Manufacturing 3/27/2014 22Dept. of E & C, SCEM
  • 23. 3/27/2014 23Dept. of E & C, SCEM
  • 24. Applications • As a switch. • As a non volatile memory. • Booting free computers. • Can perform logic operations. • In artificial neural networks. 3/27/2014 24Dept. of E & C, SCEM
  • 25. Benefits • Would allow for a quicker boot up since information is not lost when the device is turned off. • Hard Disk + RAM = MEMRISTOR. • Uses less energy and produces less heat. • As non-volatile memory, memristors do not consume power when idle. • Density allows for more information to be stored. 3/27/2014 25Dept. of E & C, SCEM
  • 26. Conclusion • It is sure that Memristor is going to revolutionaries in the 21st century as radically as the transistor in the 20th century. • But Memristor will have to wait a few years like transistor which had to wait almost a decade after it’s invention for its popular applications. 3/27/2014 26Dept. of E & C, SCEM
  • 27. References 1) Memristor resistance modulation for analog applications, Tsung Wen Lee and Janice H Nickel IEEE, electron device letters, vol 33,oct2012. 2) Memristor applications for programmable analog ICs, Sangho Shin and Kyungmin Kim, IEEE transactions on Nanotechnology, vol 10,2011. 3) Compact models for memristor based on charge flux constitutive relationships, IEEE, 2010 IEEE Spectrum: The Mysterious Memristor By Sally Adee. 3/27/2014 27Dept. of E & C, SCEM
  • 28. 3/27/2014 28Dept. of E & C, SCEM
  • 29. 3/27/2014 29Dept. of E & C, SCEM