Mospet Laptop

1. AO4468
30V N-Channel MOSFET
General Description Product Summary
VDS
ID (at VGS=10V) 10.5A
RDS(ON) (at VGS=10V) < 17mΩ
RDS(ON) (at VGS = 4.5V) < 23mΩ
ESD Protected
100% UIS Tested
100% Rg Tested
Symbol
VDS
The AO4468 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
* RoHS and Halogen-Free Compliant
V
Maximum UnitsParameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
Drain-Source Voltage 30
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
G
G
D
S
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State RθJL
°C
Thermal Characteristics
W
3.1
2TA=70°C
Junction and Storage Temperature Range -55 to 150
Power Dissipation B
PD
UnitsParameter Typ Max
°C/W
RθJA
31
59
40Maximum Junction-to-Ambient A
V±20Gate-Source Voltage
mJ
Avalanche Current C
18
A19
A
10.5
V
8.5
50
Drain-Source Voltage 30
TA=25°C
TA=70°C
Avalanche energy L=0.1mH C
Pulsed Drain Current C
Continuous Drain
Current
TA=25°C
ID
Maximum Junction-to-Lead °C/W
°C/WMaximum Junction-to-Ambient A D
16
75
24
Rev.7.0: July 2013 www.aosmd.com Page 1 of 5

2. AO4468
Symbol Min Typ Max Units
BVDSS 30 V
VDS=30V, VGS=0V 1
TJ=55°C 5
IGSS ±10 µA
VGS(th) Gate Threshold Voltage 1.2 1.8 2.4 V
ID(ON) 50 A
14 17
TJ=125°C 20 24
18 23 mΩ
gFS 36 S
VSD 0.75 1 V
IS 4 A
Ciss 740 888 pF
Coss 110 145 pF
Crss 82 115 pF
Rg 0.5 1.1 1.7 Ω
Qg(10V) 15 nC
Qg(4.5V) 7.5 nC
Qgs 2.5 nC
Qgd 3 nC
tD(on) 5 ns
t 3.5 ns
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time V =10V, V =15V, R =1.45Ω,
Gate Source Charge
VGS=0V, VDS=0V, f=1MHz
Total Gate Charge
mΩ
On state drain current
IS=1A,VGS=0V
VDS=5V, ID=10.5A
VGS=4.5V, ID=9A
Forward Transconductance
Maximum Body-Diode Continuous Current
RDS(ON) Static Drain-Source On-Resistance
IDSS
Drain-Source Breakdown Voltage
Diode Forward Voltage
µA
VDS=VGS ID=250µA
VDS=0V, VGS=±16V
Zero Gate Voltage Drain Current
Gate-Body leakage current
VGS=10V, VDS=15V, ID=10.5A
ID=250µA, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=10.5A
Gate Drain Charge
Total Gate Charge
Input Capacitance
Output Capacitance
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Reverse Transfer Capacitance
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Gate resistance
tr 3.5 ns
tD(off) 19 ns
tf 3.5 ns
trr 18 22 ns
Qrr 9 12 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.45Ω,
RGEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Charge IF=10.5A, dI/dt=100A/µs
IF=10.5A, dI/dt=100A/µsBody Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev.7.0: July 2013 www.aosmd.com Page 2 of 5

3. AO4468
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
25
30
1 2 3 4 5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
0 5 10 15 20
RDS(ON)(mΩΩΩΩ)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175 200
NormalizedOn-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=9A
VGS=10V
ID=10.5A
25°C125°C
VDS=5V
VGS=4.5V
VGS=10V
0
5
10
15
20
25
30
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=2.5V
3V
4V10V
3.5V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
10
15
20
25
30
35
40
2 4 6 8 10
RDS(ON)(mΩΩΩΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=10.5A
25°C
125°C
Rev.7.0: July 2013 www.aosmd.com Page 3 of 5

4. AO4468
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15
VGS(Volts)
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
Capacitance(pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=15V
ID=10.5A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power(W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
TA=25°C
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
10µs
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100µs
10ms
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
ZθθθθJANormalizedTransient
ThermalResistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
Single Pulse
Rev.7.0: July 2013 www.aosmd.com Page 4 of 5

5. AO4468
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT VddVgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t trd(on)
ton
td(off) tf
toff
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds DSS
2
E = 1/2 LIARAR
VddVgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I F
AR
dI/dt
I RM
rr
Vdd
Vdd
Q = - Idt
trr
Rev.7.0: July 2013 www.aosmd.com Page 5 of 5