Dylanne Dearborn's Thoughts on Physics presentation

1. Thoughts on Physics

2.  A very little bit about Physics
 The typical list of Physics Resources
 Indexing Examples

3. Physics and Chemistry

6. Pre-Print Servers (ePrint)
 arXiv
 CERN Document Server
 INSPIRE

7. Databases and Indexes
 Inspec
 GeoRef
 Web of Science
 Scopus
 SciFinder Scholar

8. Other Resources
 Physical Reference Data [NIST Physics Lab]
 Knovel Critical Tables
 NIST Physical Reference Data
 SPIE Digital Library
 NASA Technical Reports Server (NTRS)
 SPIN (Searchable Physics Information Notices) (AIP)
 NASA Astrophysics Data System
 SpringerMaterials The Landolt-Börnstein Database
 CRC Handbook of Chemistry and Physics
 Springer Tracts in Modern Physics
 Weisstein's World of Physics

9. Societies
 AAS - American Astronomical Society
 AGU - American Geophysical Union
 AIP - American Institute of Physics
 ANS - American Nuclear Society
 APS - American Physical Society
 CAP - Canadian Association of Physicists
 CSEG - Canadian Society of Exploration Geophysicists
 EPS - European Physical Society
 IOP - Institute of Physics
 NASA - National Aeronautics and Space Administration
 OSA - Optical Society of America
 SEG - Society of Exploration Geophysicists
 SPIE - International Society for Optical Engineering

11. Infrared probe of the insulator-to-metal
transition in Ga1-xMnxAs and Ga1-xBexAs
B. C. Chapler, R. C. Myers, S. Mack, A.
Frenzel, B. C. Pursley, K. S. Burch, E. J.
Singley, A. M. Dattelbaum, N. Samarth, D. D.
Awschalom, and D. N. Basov; Phys. Rev. B
84, 081203 (2011)
DOI: 10.1103/PhysRevB.84.081203
Publisher: American Physical Society (APS)

12. We report infrared studies of the insulator-to-metal
transition (IMT) in GaAs doped with either
magnetic (Mn) or nonmagnetic acceptors (Be).
We observe a resonance with a natural
assignment to impurity states in the insulating
regime of Ga1−xMnxAs, which persists across the
IMT to the highest doping (16%). Beyond the IMT
boundary, behavior combining insulating and
metallic trends also persists to the highest Mn
doping. Be-doped samples, however, display
conventional metallicity just above the critical IMT
concentration, with features indicative of
transport within the host valence band.

15. arXiv

20. Infrared probe of the insulator-to-metal
transition in Ga1-xMnxAs and Ga1-xBexAs
B. C. Chapler, R. C. Myers, S. Mack, A.
Frenzel, B. C. Pursley, K. S. Burch, E. J.
Singley, A. M. Dattelbaum, N. Samarth, D. D.
Awschalom, and D. N. Basov; Phys. Rev. B
84, 081203 (2011)
DOI: 10.1103/PhysRevB.84.081203
Publisher: American Physical Society (APS)

21. We report infrared studies of the insulator-to-metal
transition (IMT) in GaAs doped with either
magnetic (Mn) or nonmagnetic acceptors (Be).
We observe a resonance with a natural
assignment to impurity states in the insulating
regime of Ga1−xMnxAs, which persists across the
IMT to the highest doping (16%). Beyond the IMT
boundary, behavior combining insulating and
metallic trends also persists to the highest Mn
doping. Be-doped samples, however, display
conventional metallicity just above the critical IMT
concentration, with features indicative of
transport within the host valence band.

22. Subject Area:
Physics and Astronomy
Materials Science
Keywords
None listed
Other Search Fields:
Author, Title, Abstract

23. KeyWords Plus:
Magnetic semiconductors; ferromagnetism; temperature;
spectra; band
Subject Area:
Physics and Astronomy Web of Science Category:
Materials Science Physics, Condensed Matter
Keywords Subject Area:
None listed Physics
Other Search Fields: Other Search Fields:
Author, Title, Abstract Author, Title, Abstract

24. KeyWords Plus:
Magnetic semiconductors; ferromagnetism; temperature;
spectra; band
Subject Area:
Physics and Astronomy Web of Science Category:
Materials Science Physics, Condensed Matter
Keywords Subject Area:
None listed Physics
Other Search Fields: Other Search Fields:
Author, Title, Abstract Author, Title, Abstract
Primary Category:
Condensed Matter
Subject Description:
Materials Science (cond-mat.mtrl-sci)
Other Search Fields:
Author, Title, Abstract

25. KeyWords Plus:
Magnetic semiconductors; ferromagnetism; temperature;
spectra; band
Subject Area:
Physics and Astronomy Web of Science Category:
Materials Science Physics, Condensed Matter
Keywords Subject Area:
None listed Physics
Other Search Fields: Other Search Fields:
Author, Title, Abstract Author, Title, Abstract
Primary Category: PACS:
Condensed Matter Condensed Matter: Electronic Structure, Electrical, Magnetic,
Subject Description: and Optical Properties
Materials Science (cond-mat.mtrl-sci) 78.66.Fd:
Optical properties, condensed-matter spectroscopy and other
Other Search Fields: interactions of radiation and particles with condensed matter
Author, Title, Abstract Optical properties of specific thin films
III-V semiconductors
71.30.+h,
Electronic structure of bulk materials
Metal-insulator transitions and other electronic transitions
73.50.-h,
Electronic structure and electrical properties of surfaces,
interfaces, thin films, and low-dimensional structures
Electronic transport phenomena in thin films
75.50.Pp
Magnetic properties and materials
Studies of specific magnetic materials
Magnetic semiconductors
Other Search Fields:
Author, Title, Abstract, Supplementary Material

26. Indexing
Electric Phenomena (Section 76-1)
Concepts
Magnetic semiconductor materials
Metal-insulator transition
IR probe of the insulator-to-metal transition in Ga1-xMnxAs and
Ga1-xBexAs
Optical conductivity
IR; IR probe of the insulator-to-metal transition in Ga1-xMnxAs
and Ga1-xBexAs
Substances
124230-82-6 Beryllium gallium arsenide (Be0.01Ga0.99As)
179388-32-0 Gallium manganese arsenide (Ga0.96Mn0.04As)
191282-44-7 Gallium manganese arsenide (Ga0.93Mn0.07As)
192635-59-9 Gallium manganese arsenide (Ga0.98Mn0.02As)
192635-60-2 Gallium manganese arsenide (Ga0.99Mn0.01As)
193894-07-4 Gallium manganese arsenide (Ga0.95Mn0.05As)
201655-63-2 Gallium manganese arsenide (Ga0.91Mn0.09As)
213882-30-5 Gallium manganese arsenide (Ga0.97Mn0.03As)
1037600-28-4 Gallium manganese arsenide (Ga0.84Mn0.16As)
IR probe of the insulator-to-metal transition in Ga1-xMnxAs and
Ga1-xBexAs properties
7439-96-5 Manganese, uses
7440-41-7 Beryllium, uses
gallium arsenide doped with; IR probe of the insulator-to-metal
transition in Ga1-xMnxAs and Ga1-xBexAs
Modifier or additive use; Uses
1303-00-0 Gallium arsenide, properties
manganese or beryllium doped; IR probe of the insulator-to-
metal transition in Ga1-xMnxAs and Ga1-xBexAs properties
Supplementary Terms
manganese beryllium doped gallium arsenide insulator metal
transition; IR optical cond IMT
Other Search Fields:
Author, Title, Abstract, Tags, Patent information

27. Material Identity Number:
DQ91-2011-032
Inspec controlled terms:
beryllium compounds - gallium arsenide - III-V semiconductors - impurity states - infrared
Indexing spectra - manganese compounds - metal-insulator transition - semimagnetic semiconductors -
Electric Phenomena (Section 76-1) valence bands
Concepts Uncontrolled terms:
Magnetic semiconductor materials infrared probe - insulator-to-metal transition boundary - nonmagnetic acceptor - impurity states
Metal-insulator transition - insulating regime - Mn doping - metallicity - critical insulator-to-metal transition concentration
IR probe of the insulator-to-metal transition in Ga1-xMnxAs and - valence band - Ga1-xMnxAs - Ga1-xBexAs
Ga1-xBexAs
Optical conductivity Inspec Classification Codes:
IR; IR probe of the insulator-to-metal transition in Ga1-xMnxAs A7260 Mixed conductivity and conductivity transitions - A7280E Electrical conductivity of II-VI and
and Ga1-xBexAs III-V semiconductors - A7550P Magnetic semiconductors - A7830G Infrared and Raman spectra
in inorganic crystals - A7155G Impurity and defect levels in II-VI and III-V semiconductors - A7130
Substances Metal-insulator transitions and other electronic transitions - A7125T Electronic structure of
124230-82-6 Beryllium gallium arsenide (Be0.01Ga0.99As) crystalline semiconductor compounds and insulators - B2520D II-VI and III-V semiconductors
179388-32-0 Gallium manganese arsenide (Ga0.96Mn0.04As)
191282-44-7 Gallium manganese arsenide (Ga0.93Mn0.07As) Chemical Indexing:
192635-59-9 Gallium manganese arsenide (Ga0.98Mn0.02As) GaMnAs/ss As/ss Ga/ss Mn/ss;GaBeAs/ss As/ss Be/ss Ga/ss
192635-60-2 Gallium manganese arsenide (Ga0.99Mn0.01As)
193894-07-4 Gallium manganese arsenide (Ga0.95Mn0.05As) Treatment:
201655-63-2 Gallium manganese arsenide (Ga0.91Mn0.09As) Experimental (EXP)
213882-30-5 Gallium manganese arsenide (Ga0.97Mn0.03As)
1037600-28-4 Gallium manganese arsenide (Ga0.84Mn0.16As) Discipline:
IR probe of the insulator-to-metal transition in Ga1-xMnxAs and Physics (A); Electrical/Electronic engineering (B)
Ga1-xBexAs properties
7439-96-5 Manganese, uses IPC Code:
7440-41-7 Beryllium, uses H01F1/40
gallium arsenide doped with; IR probe of the insulator-to-metal SECTION H ELECTRICITY
transition in Ga1-xMnxAs and Ga1-xBexAs BASIC ELECTRIC ELEMENTS
Modifier or additive use; Uses MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC
1303-00-0 Gallium arsenide, properties PROPERTIES ceramics based on ferrites ; alloys ; thermomagnetic devices ; loudspeakers,
manganese or beryllium doped; IR probe of the insulator-to- microphones, gramophone pick-ups...
metal transition in Ga1-xMnxAs and Ga1-xBexAs properties Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of
materials for their magnetic properties thin magnetic films characterised by their composition
Supplementary Terms of inorganic materials takes precedence 6
manganese beryllium doped gallium arsenide insulator metal of magnetic semiconductor materials, e.g. CdCr 2 S 4 devices using galvano-magnetic or similar
transition; IR optical cond IMT effects 6
Other Search Fields: Other Search Fields:
Author, Title, Abstract, Tags, Patent information Author, Title, Abstract, Tags, Patent information