5. 130... plot.1d h a.y=0 b.y=0.07 a.x=0 b.x=0 ascii outf=pdr512.h_1dy
131... plot.1d j.electr a.y=0 b.y=0.07 a.x=0 b.x=0 ascii outf=pdr512.je_1dy
132... plot.1d j.hole a.y=0 b.y=0.07 a.x=0 b.x=0 ascii outf=pdr512.jh_1dy
133... END
*************
MOSFET - NMOS
*************
Mesh statistics :
Total grid points = 2438
Total no. of elements = 4680
Min grid spacing (um) = 1.6355E-05
Max grid spacing (um) = 2.1529E-02 (r= 1.3163E+03)
Obtuse elements = 0 ( 0.0%)
** Warning in line # 33
Electrode # 1 contacts both sides of a junction or semi/ins boundary
** Warning in line # 33
Electrode # 2 contacts both sides of a junction or semi/ins boundary
3D plot written to pdr512.doping
Function # 1: Doping
Region = 1 silicon ie1,ie2 = 1 936
Region = 2 silicon ie1,ie2 = 937 1804
Region = 3 silicon ie1,ie2 = 1805 2734
6. Region = 4 silicon ie1,ie2 = 2735 4160
Region = 5 sio2 ie1,ie2 = 4161 4390
Region = 6 sio2 ie1,ie2 = 4391 4530
Region = 7 sio2 ie1,ie2 = 4531 4680
Material Definitions
Index Name Regions
1 silicon 1,2,3,4
2 sio2 5,6,7
Constants :
Boltzmanns k = 8.61700E-05
charge = 1.60200E-19
permittivity = 8.85400E-14
electron mass= 9.10950E-31
Ambient temperature = 300.000
Thermal voltage = 0.025851
Material data
num r-perm Egap Affinity Ec offset Bulk qf k-therm Gen con
1 11.80 1.1200E+00 4.1700E+00 0.0000E+00 0.0000E+00 1.4500E+00
4.0000E+13
2 3.90 9.0000E+00 9.0000E-01 -3.2700E+00 0.0000E+00 2.5000E-01 0.0000E+00
Semiconductor data
num stats ni An** Ap** Nc Nv
1 Boltz 9.963E+09 1.100E+02 3.000E+01 3.200E+19 2.030E+19
num gcb edb gcv eab w2d H-alphn H-alphp
1 2.000E+00 5.000E-02 4.000E+00 4.500E-02 1.000E-03 3.000E-05
2.000E-07
7. Model flags :
Incomp. ionization = F
Band-gap narrowing = F
SRH recombination =F
Conc-dep lifetime =F
Auger recombination = F
Deep level traps =F
Radiative recomb =F
Impact ionization =F
Band-to-band tunnel = F
Trap-assist tunnel = F
Stimulated emission = F
Carrier-carr. scat. = F
Neutral imp. scat. = F
Ion-impurity scat. = T
Field dep. mobil =T
Gate fld dep mobil = T
Field dep. diff =F
Thermoelectric curr = T
ET ebal formulation = F
Model Types:
mat # II-scat CC-scat Fld mob Vsat Gate mob
1 n Analytic Dorkel Caughey Exponent SGS
p Analytic Dorkel Caughey Power SGS
mat # D(E) Energy Ce(T) BGN
1 n Lincut Const. P Slotboom
8. p Lincut Const. P Slotboom
Driving forces :
Mobility, parallel field = qfb
Mobility, gate field = exj
Diffusivity = qfb
Impact ionization = eoj
Default low-field mobilities/relax-times, vsat, w-kappa
mat # mobl0 tauw vsat(T0) kappa
1 n 1390. 2.0000E-13 1.0349E+07 1.500
p 470.0 2.0000E-13 8.3700E+06 1.500
Velocity saturation coefficients
mat # coef 1 coef 2 coef 3 coef 4 coef 5
1 n 2.400E+07 0.800 0.500 0.00 0.00
p 8.370E+06 0.800 -0.520 0.00 0.00
Lattice scat. mobility coefficients
mat # coef 1 coef 2 coef 3 coef 4 coef 5
1 n 1.390E+03 -2.30 0.00 0.00 0.00
p 470. -2.20 0.00 0.00 0.00
Ion-impurity mobility coefficients
mat # coef 1 coef 2 coef 3 coef 4 coef 5
1 n 55.2 1.072E+17 0.733 -2.55 -0.570
p 49.7 1.606E+17 0.700 -2.55 -0.570
Field mobility coefficients
mat # coef 1 coef 2 coef 3 coef 4 coef 5
9. 1 n 2.00 0.00 0.00 0.00 0.00
p 1.00 0.00 0.00 0.00 0.00
Field mobility coefficients (cont.)
mat # coef 6 coef 7 coef 8 coef 9 coef 10
1 n 0.00 0.00 0.00 0.00 0.00
p 0.00 0.00 0.00 0.00 0.00
Gate mobility coefficients
mat # coef 1 coef 2 coef 3 coef 4 coef 5
1 n 4.750E+07 1.740E+05 0.125 5.820E+14 0.00
p 9.930E+06 8.840E+05 3.170E-02 2.050E+14 0.00
Gate mobility coefficients (cont.)
mat # coef 6 coef 7 coef 8 coef 9 coef 10
1 n 0.00 0.00 0.00 0.00 0.00
p 0.00 0.00 0.00 0.00 0.00
Energy relaxation coefficients
mat # coef 1 coef 2 coef 3 coef 4 coef 5
1 n 1.00 0.00 0.00 0.00 0.00
p 1.00 0.00 0.00 0.00 0.00
Energy relaxation coefficients (cont.)
mat # coef 6 coef 7 coef 8 coef 9 coef 10
1 n 0.00 0.00 0.00 0.00 0.00
p 0.00 0.00 0.00 0.00 0.00
Misc energy trans coefficients
mat # coef 1 coef 2 coef 3 coef 4 coef 5
11. 1 5* 4.5834E-08 R( 1)
1 6* 2.0050E-05 U( 4)
1 6* 1.5706E-13 R( 1)
1 7* 9.3140E-11 U( 4)
1 7* 1.7620E-15 R( 1)
1 0 9.0000E-01 R( 0)
1 1 5.4840E-15 U( 1)
1 1 5.0528E-01 R( 1)
2 0 4.4348E-14 R( 0)
2 1 4.0255E-15 U( 1)
2 1 4.2979E-14 R( 1)
2 0 9.0839E-01 R( 0)
2 1 4.1710E-15 U( 1)
2 1 3.6780E-01 R( 1)
1 0 1.0307E-13 3.8217E-15 R( 0)
1 1 2.2632E-15 2.1717E-15 U( 1)
1 1 7.5139E-14 7.9753E-14 R( 1)
Electrode Voltage Electron Current Hole Current Conduction Current
(Volts) (Amps) (Amps) (Amps)
1 0.0000 -2.48510E-16 0.00000E+00 -2.48510E-16
2 0.0000 1.05670E-15 0.00000E+00 1.05670E-15
3 0.0000 0.00000E+00 0.00000E+00 0.00000E+00
4 0.0000 -9.44081E-33 0.00000E+00 -9.44081E-33
Electrode Flux Displacement Current Total Current
(Coul) (Amps) (Amps)
1 -8.32847E-17 0.00000E+00 -2.48510E-16
2 -1.16057E-16 0.00000E+00 1.05670E-15
3 3.26245E-16 0.00000E+00 0.00000E+00
4 -2.72337E-16 0.00000E+00 -9.44081E-33
Convergence criterion completely met
Total cpu time for Newton equation assembly = 0.5667
Total cpu time for Newton linear solves = 0.9000 ( 0.9000)
Total cpu time for bias point = 1.4667
12. Total cpu time = 1.7667
Solution written to pdr512.initsol
3D plot written to pdr512.equ
Function # 1: Potential
Function # 2: Electron density
Region = 1 silicon ie1,ie2 = 1 936
Region = 2 silicon ie1,ie2 = 937 1804
Region = 3 silicon ie1,ie2 = 1805 2734
Region = 4 silicon ie1,ie2 = 2735 4160
Region = 5 sio2 ie1,ie2 = 4161 4390
Region = 6 sio2 ie1,ie2 = 4391 4530
Region = 7 sio2 ie1,ie2 = 4531 4680
3D plot written to pdr512.qfn_ini
Function # 1: Electron qf level
Region = 1 silicon ie1,ie2 = 1 936
Region = 2 silicon ie1,ie2 = 937 1804
Region = 3 silicon ie1,ie2 = 1805 2734
Region = 4 silicon ie1,ie2 = 2735 4160
Region = 5 sio2 ie1,ie2 = 4161 4390
Region = 6 sio2 ie1,ie2 = 4391 4530
Region = 7 sio2 ie1,ie2 = 4531 4680
3D plot written to pdr512.qfp_ini
Function # 1: Hole qf level
Region = 1 silicon ie1,ie2 = 1 936
13. Region = 2 silicon ie1,ie2 = 937 1804
Region = 3 silicon ie1,ie2 = 1805 2734
Region = 4 silicon ie1,ie2 = 2735 4160
Region = 5 sio2 ie1,ie2 = 4161 4390
Region = 6 sio2 ie1,ie2 = 4391 4530
Region = 7 sio2 ie1,ie2 = 4531 4680
3D plot written to pdr512.po_ini
Function # 1: Potential
Region = 1 silicon ie1,ie2 = 1 936
Region = 2 silicon ie1,ie2 = 937 1804
Region = 3 silicon ie1,ie2 = 1805 2734
Region = 4 silicon ie1,ie2 = 2735 4160
Region = 5 sio2 ie1,ie2 = 4161 4390
Region = 6 sio2 ie1,ie2 = 4391 4530
Region = 7 sio2 ie1,ie2 = 4531 4680
3D plot written to pdr512.do_ini
Function # 1: Doping
Region = 1 silicon ie1,ie2 = 1 936
Region = 2 silicon ie1,ie2 = 937 1804
Region = 3 silicon ie1,ie2 = 1805 2734
Region = 4 silicon ie1,ie2 = 2735 4160
Region = 5 sio2 ie1,ie2 = 4161 4390
Region = 6 sio2 ie1,ie2 = 4391 4530
Region = 7 sio2 ie1,ie2 = 4531 4680
3D plot written to pdr512.el_ini
14. Function # 1: Electron density
Region = 1 silicon ie1,ie2 = 1 936
Region = 2 silicon ie1,ie2 = 937 1804
Region = 3 silicon ie1,ie2 = 1805 2734
Region = 4 silicon ie1,ie2 = 2735 4160
Region = 5 sio2 ie1,ie2 = 4161 4390
Region = 6 sio2 ie1,ie2 = 4391 4530
Region = 7 sio2 ie1,ie2 = 4531 4680
3D plot written to pdr512.hh_ini
Function # 1: Hole density
Region = 1 silicon ie1,ie2 = 1 936
Region = 2 silicon ie1,ie2 = 937 1804
Region = 3 silicon ie1,ie2 = 1805 2734
Region = 4 silicon ie1,ie2 = 2735 4160
Region = 5 sio2 ie1,ie2 = 4161 4390
Region = 6 sio2 ie1,ie2 = 4391 4530
Region = 7 sio2 ie1,ie2 = 4531 4680
3D plot written to pdr512.e_ini
Function # 1: Electric field
Region = 1 silicon ie1,ie2 = 1 936
Region = 2 silicon ie1,ie2 = 937 1804
Region = 3 silicon ie1,ie2 = 1805 2734
Region = 4 silicon ie1,ie2 = 2735 4160
Region = 5 sio2 ie1,ie2 = 4161 4390
Region = 6 sio2 ie1,ie2 = 4391 4530
Region = 7 sio2 ie1,ie2 = 4531 4680
37. 1 7* 1.7573E-08 2.9115E-03 U( 3)
1 7* 1.7476E-13 1.1570E-11 R( 1)
1 8* 1.3067E-10 2.0966E-05 U( 3)
1 8* 1.8001E-13 3.1482E-13 R( 1)
1 9* 9.1571E-15 1.0349E-09 U( 2)
1 9* 1.6561E-13 3.1423E-13 R( 1)
Electrode Voltage Electron Current Hole Current Conduction Current
(Volts) (Amps) (Amps) (Amps)
1 0.0000 -4.37294E-08 0.00000E+00 -4.37294E-08
2 0.8167 4.37294E-08 0.00000E+00 4.37294E-08
3 0.0000 0.00000E+00 0.00000E+00 0.00000E+00
4 0.0000 -3.49464E-18 0.00000E+00 -3.49464E-18
Electrode Flux Displacement Current Total Current
(Coul) (Amps) (Amps)
1 -8.33093E-17 0.00000E+00 -4.37294E-08
2 -7.04938E-17 0.00000E+00 4.37294E-08
3 1.82730E-16 0.00000E+00 0.00000E+00
4 -3.92936E-16 0.00000E+00 -3.49464E-18
Convergence criterion completely met
Total cpu time for Newton equation assembly = 1.5333
Total cpu time for Newton linear solves = 4.0667 ( 4.0667)
Total cpu time for bias point = 5.6333
Total cpu time = 38.9333
Solution for bias:
V1 = 0.0000000E+00 V2 = 9.1250000E-01
V3 = 0.0000000E+00 V4 = 0.0000000E+00
Previous solution used as initial guess
56. 1 4* 8.8811E-14 1.3399E-07 U( 2)
1 4* 2.5666E-13 5.1985E-13 R( 1)
Electrode Voltage Electron Current Hole Current Conduction Current
(Volts) (Amps) (Amps) (Amps)
1 0.0000 -5.58464E-08 0.00000E+00 -5.58464E-08
2 1.0802 5.58464E-08 0.00000E+00 5.58464E-08
3 0.0000 0.00000E+00 0.00000E+00 0.00000E+00
4 0.0000 -3.56706E-18 0.00000E+00 -3.56706E-18
Electrode Flux Displacement Current Total Current
(Coul) (Amps) (Amps)
1 -8.33170E-17 0.00000E+00 -5.58464E-08
2 -5.55069E-17 0.00000E+00 5.58464E-08
3 1.37107E-16 0.00000E+00 0.00000E+00
4 -4.31147E-16 0.00000E+00 -3.56706E-18
Convergence criterion completely met
Total cpu time for Newton equation assembly = 0.9667
Total cpu time for Newton linear solves = 1.5000 ( 1.5000)
Total cpu time for bias point = 2.5000
Total cpu time = 120.8667
Solution for bias:
V1 = 0.0000000E+00 V2 = 1.1041667E+00
V3 = 0.0000000E+00 V4 = 0.0000000E+00
Previous solution used as initial guess
o-itr i-itr psi-error n-error
1 0 6.9787E-01 R( 0)
1 1 9.2679E-01 U( 1)