Software and Systems Engineering Standards: Verification and Validation of Sy...
Grr
1. PVsyst TRIAL
20/07/16 18h50PVSYST V6.46
Characteristics of a PV module
PVsyst Evaluation mode
Manufacturer, model : First Solar, FS-4110A-2 Sept2014
Availability : Prod. from 2015
Data source : Manfacturer Sept 2014
STC power (manufacturer) Pnom 110 Wp Technology CdTe
Module size (W x L) 0.600 x 1.200 m² Rough module area 0.72 m²Amodule
Number of cells 2 x 108 Sensitive area (cells) Acells 0.68 m²
Specifications for the model (manufacturer or measurement data)
Reference temperature TRef 25 °C Reference irradiance GRef 1000 W/m²
Open circuit voltage Voc 87.2 V Short-circuit current Isc 1.75 A
Max. power point voltage Vmpp 69.4 V Max. power point current Impp 1.58 A
=> maximum power Pmpp 109.8 W Isc temperature coefficient muIsc 0.7 mA/°C
One-diode model parameters
Shunt resistance Rshunt 7500 ohm Diode saturation current IoRef 2.34 nA
Serie resistance Rserie 4.37 ohm Voc temp. coefficient MuVoc -221 mV/°C
Diode quality factor Gamma 1.54
Specified Pmax temper. coeff. muPMaxR -0.34 %/°C Diode factor temper. coeff. muGamma 0.001 1/°C
Special parameter for amorphous modules
Rshunt exponential Rsh(G=0) 15000 ohm Exponential parameter Rsh exp 4.0
Recombination parameter di² / mu tau 0.40 1/V Spectral correction enabled No
Model results for standard conditions (STC: T=25°C, G=1000 W/m², AM=1.5)
Max. power point voltage Vmpp 68.2 V Max. power point current Impp 1.61 A
Maximum power Pmpp 110.0 Wc Power temper. coefficient muPmpp -0.34 %/°C
Efficiency(/ Module area) Eff_mod 15.3 % Fill factor FF 0.721
Efficiency(/ Cells area) Eff_cells 16.3 %
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Current[A]
PV module: First Solar, FS-4110A-2 Sept2014
102.5 W
Incident Irrad. = 1000 W/m²
Cells temp. = 45 °C
82.4 W
Incident Irrad. = 800 W/m²
61.8 W
Incident Irrad. = 600 W/m²
40.9 W
Incident Irrad. = 400 W/m²
19.7 WIncident Irrad. = 200 W/m²
![PVsyst TRIAL
20/07/16 18h50PVSYST V6.46
Characteristics of a PV module
PVsyst Evaluation mode
Manufacturer, model : First Solar, FS-4110A-2 Sept2014
Availability : Prod. from 2015
Data source : Manfacturer Sept 2014
STC power (manufacturer) Pnom 110 Wp Technology CdTe
Module size (W x L) 0.600 x 1.200 m² Rough module area 0.72 m²Amodule
Number of cells 2 x 108 Sensitive area (cells) Acells 0.68 m²
Specifications for the model (manufacturer or measurement data)
Reference temperature TRef 25 °C Reference irradiance GRef 1000 W/m²
Open circuit voltage Voc 87.2 V Short-circuit current Isc 1.75 A
Max. power point voltage Vmpp 69.4 V Max. power point current Impp 1.58 A
=> maximum power Pmpp 109.8 W Isc temperature coefficient muIsc 0.7 mA/°C
One-diode model parameters
Shunt resistance Rshunt 7500 ohm Diode saturation current IoRef 2.34 nA
Serie resistance Rserie 4.37 ohm Voc temp. coefficient MuVoc -221 mV/°C
Diode quality factor Gamma 1.54
Specified Pmax temper. coeff. muPMaxR -0.34 %/°C Diode factor temper. coeff. muGamma 0.001 1/°C
Special parameter for amorphous modules
Rshunt exponential Rsh(G=0) 15000 ohm Exponential parameter Rsh exp 4.0
Recombination parameter di² / mu tau 0.40 1/V Spectral correction enabled No
Model results for standard conditions (STC: T=25°C, G=1000 W/m², AM=1.5)
Max. power point voltage Vmpp 68.2 V Max. power point current Impp 1.61 A
Maximum power Pmpp 110.0 Wc Power temper. coefficient muPmpp -0.34 %/°C
Efficiency(/ Module area) Eff_mod 15.3 % Fill factor FF 0.721
Efficiency(/ Cells area) Eff_cells 16.3 %
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Current[A]
PV module: First Solar, FS-4110A-2 Sept2014
102.5 W
Incident Irrad. = 1000 W/m²
Cells temp. = 45 °C
82.4 W
Incident Irrad. = 800 W/m²
61.8 W
Incident Irrad. = 600 W/m²
40.9 W
Incident Irrad. = 400 W/m²
19.7 WIncident Irrad. = 200 W/m²](https://image.slidesharecdn.com/gr-160726105903/85/grr-1-320.jpg)
