GaN transistors provide advantages over silicon for power electronics applications including higher breakdown voltage, electron mobility and operating temperature. The document discusses a 600V GaN transistor that demonstrates superior performance compared to silicon MOSFETs in aspects such as on-resistance, gate charge and reverse recovery charge. Key factors for system design with GaN transistors include minimizing inductances and providing appropriate surge protection and heat sinking. GaN is well-suited for efficient power conversion topologies and its benefits are increased at higher operating frequencies.

1. Public Information
GaN Transistors Are Here
Faster, Smaller, and More Efficient...

2. Public Information2 5/28/2015
Semiconductor Silicon Silicon
Carbide
Galliu
m
Nitride
Characteristic Unit
Bandgap eV 1.1 3.26 3.49
Electron Mobility cm²/Vs 1500 700 2000
Peak Electron Velocity x10⁷ cm/s 1.0 2.0 2.1
Critical Electric Field MV/cm 0.3 3.0 3.0
Thermal Conductivity W/cm·K 1.5 4.5 >1.5
Relative Dielectric Constant ετ 11.8 10.0 9.0
Why GaN?
Excellent Characteristics for a Power Device
• Superior breakdown capability
• Higher electron density and speed
• Higher operating temperature

3. Public Information3 5/28/2015
• HEMT = High Electron Mobility Transistor
• Conducts through two-dimensional electron gas
• Lateral current conduction
The GaN HEMT
What is it?

4. Public Information4 5/28/2015
• Ease of drive
– Traditional gate drive voltages can be used
– Characteristics set by low voltage transistor
• Gate voltage rating
• Threshold voltage
• Gate charge (~10x better than super-junction)
• Reliability
– Passed JEDEC industrial specifications
– Passed long-term application-level testing
600 V GaN Cascode Advantages

5. Public Information5 5/28/2015
E
Part Rdson (mΩ) Qg @4.5 V
(nC)
Co(er) @0 to
480 V (pF)
Qrr (µC)
NTP8G202N 290 6.2 36 0.029
NTP8G206N 150 6.2 56 0.054
First 600 V GaN Products
• Products qualified and released!
• Products at other specifications and in other
packages are in development.
Product Specifications

6. Public Information6 5/28/2015
Parameters
On
resistance
(W)
Gate charge
(nC)
Output
charge (nC)
Energy
related Coss
(pF)
Reverse
recovery
charge (mC)
FOM1A FOM1B FOM2
Symbol Rds, on Qg Qoss Coer Qrr Ron*Qg Ron*Qoss Ron*Qrr
GaN Gen1 0.180 6.2 53 56 0.054 1.1 9.5 0.01
SJ Si GenA 0.199 32 86 69 5.5 6.4 17 1.1
SJ Si GenB 0.190 63 128 56 6.9 11 24 1.3
SJ Si GenC 0.199 20 126 29 6 4.0 25 1.2
Low Qrr SJ 0.190 95 77 83 1 18 15 0.19
1st Gen 600V GaN-on-Si HEMT Compared to HV MOSFET
4x
Better Better Similar
>20x
Better
For similar on-resistance,
GaN’s performance is:
• 1st generation GaN is already superior to silicon
• GaN still has ample potential to improve

7. Public Information7 5/28/2015
• Efficient power conversion favors soft switching
circuit topologies that recover energy.
– Phase-Shifted Full-Bridge
– Half-Bridge or FB LLC
– Synchronous Boost
– Others
• GaN offers perfectly suited performance to
accelerate this trend.
GaN Applications
Ideal Fit for Efficient Circuit Topologies

8. Public Information8 5/28/2015
• Drive and power loop inductances - Minimize
component spacing
• Surge protection devices must be used
• Ensure thermal performance by appropriate heat
sinking
• Parallelization can be done by matching gate drive
and power loop impedances
• Separate grounds for power and signal
components, connected at a single point
System Development for GaN
Critical Factors

9. Public Information9 5/28/2015
• Traditional CCM Boost Circuit vs Totem Pole Circuit
• GaN transistors enable more efficient topology
Power Factor Correction
230 Vac Input 110 Vac Input
Efficiency Impovement
by Topology Change

10. Public Information10 5/28/2015
• Benefits from GaN at higher frequency
– Increased power density
– Reduced system size and weight
• System cost parity with better performance
• Component cost will reduce with volume to
become lowest cost wide band gap technology
Advantages of GaN

11. Public Information11 5/28/2015
• GaN Transistors – ON Semiconductor and Transphorm
collaborating to enable adoption in power systems
• Packaging – Advanced packaging technology to combine
with characteristics of more ideal switches
• Drivers – High voltage drivers now, more coming for GaN
• Controllers – Applying strong market presence to GaN
• Reference Designs – Applying system expertise to GaN
solutions for customers, not just products
Expertise in GaN Power Electronics...
Poised to provide customers a TOTAL GaN solution.