The document provides instructions for downloading and using the SRIM software for simulating ion interactions in materials. It describes downloading SRIM from the project website, installing it, and conducting simulations of ion ranges and stopping powers, TRIM calculations to model ion trajectories in layered structures, and viewing experimental stopping power data. The key steps are downloading SRIM, selecting ion and target materials, running simulations, and analyzing output graphs of ion ranges, energy loss mechanisms, and sputtering yields.

1. A short introduction to SRIM
code
JAVIER GARCÍA MOLLEJA

2. Download process
 Go to web page: http://srim.org/
 You can read about both, software or science involved in
the development.
 There are a different explanations about contents, errors
and ion beam analysis.
 SRIM program can be downloaded from this link:
http://srim.org/SRIM/SRIMLEGL.htm
 It is interesting to read instructions about installation,
because the new version is the 2013 one.
 Many researchers always use the previous version (with
all problems solved yet), 2008 one in this case.

3. Download process
 In this case SRIM 2008 was used.
 Once downloaded it is necessary change the type file:
from .e to .exe.
 It is interesting create a new folder (with the name
that you wish), because this file uncompress many
others.
 SETUP.EXE must be used and you can create a new
folder named SRIM located at C:/Program Files.
 Under Windows is very easy the installation, but be
careful, W7 and its security protocols avoid some
important steps during the process.

4. Simulation processes
 First step is double click on SRIM 2008.exe icon
(you could create a direct access and place it in your
desktop).
 There are a lot of tutorials and ‘read me’ files.
 It is interesting search and navigate on
http://srim.org/SRIM/SRIMPICS/STOPPLOTS.htm
to discover experimental plots.
 You could copy them and place those pictures on
SRIMPICS folder.

5. Simulation processes

6. Stopping/Range tables
 We can determine ion ranges in one
layer (composed by one or many
elements).
 You can select ion element and energy
range. This is the same for the target.
 You can select a compound (nuclear
type, plastic type, steel type, biological
type…). You must download a font file
to see descriptions.
 Output file is in the units you want.
 WARNING: if you consider a gas or a
compound it is necessary be sure if
corrections is needed and select the
corresponding buttons.
 Density of mixtures can be varied, but
in general are fine.
 NEVER erase all numbers located at
Stoich dialog (consider you are
mistaken and abort the software –at
least in 2006 version-).

7. Stopping/Range tables
 Equations considered are electronic and nuclear
ones:

8. TRIM Calculation

9. TRIM Calculation
 Ion data and target data are the same that in the previous
section. Now you can add an incidence angle to the ion.
 The new thing is that you can add many layers: to
simulate for example, a superlattice.
 In the upper side you can select different types of
simulations (ion distribution, detailed calculation,
sputtering, varying ion energy, full cascade, damage
cascade and damage with full calculation). Besides, you
can select main plots are you interested in.
 In the lower side you must add a seed number and type
the maximum number of ions, including plots depths.

10. TRIM calculation
 Calculation is based in Monte Carlo processes.
 Be careful with densities and data always present in Atom
Stoich dialog.

11. TRIM Calculation
 You can observe many graphs and you can create
many saving files located at SRIM Outpus folder.
 Selecting different types of calculation right side may
be changed.
 Important data are ion ranges and their straggling,
different mechanisms for energy loss and their
contribution and sputtering yields and the ejection
energy.

12. TRIM Calculation

13. Experimental Stopping Powers

14. Experimental Stopping Powers
 You can select H, He, and Li bombardment into any
material.
 It is interesting search about the behavior of an
element as target or this selected element as ion.