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Indium Oxide Nano Particle Preparation and Characterization using Laser Ablation method
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Indium Oxide Nano Particle Preparation and Characterization using Laser Ablation method
1.
© 2022, IRJET
| Impact Factor value: 7.529 | ISO 9001:2008 Certified Journal | Page 1472 Indium Oxide Nano Particle Preparation and Characterization using Laser Ablation method 1Physics Department, Om Sterling Global University, Hisar, Haryana (India) 2ECE Department, Om Sterling Global University, Hisar, Haryana (India) ---------------------------------------------------------------------------***--------------------------------------------------------------------------- Abstract – In2O3 (Indium oxide) is a technologically important apparent conducting oxide having a energy gap near to gallium nitride (GaN), nanoparticles of In2O3 were prepared by PLA (pulsed laser ablation) of a pure metal target of indium. nanocrystalline Indium oxide nanoparticles have mean diameter of 6.5nm and have cubic crystal composition established by X-ray diffraction and TEM (transmission electron microscopy). A well-built emanation peak at 3.76eV is observed by Photoluminescence spectroscopy. Keywords – GaN, Indium Oxide, X - Ray diffraction (XRD), transmission electron microscopy (TEM), (PL) Photoluminescence I. INTRODUCTION Recent materials research paying attention toward preparation and depiction of electronic properties, structure analysis, optical properties, of thin films with bulk TCO (transparent conducting oxides) which is traditionally known as transparent conducting oxide (TCOs), is observed a key of curiosity in earlier period. Recently overview of several attractive properties of material have countered problem regarding preparation, the charge carriers character and electronic properties, effect of dopants, also hypothetical model for analytical performance restrictions [1]. Oxides of zinc, tin, indium which are transparent conducting oxides are studied mostly and have great technological importance. The cadmium stannates, fluorine- doped transparent conducting oxides shows great optical absorption and electrical conductivity. Elevated precision in visible region and elevated conductivity of transparent conducting oxides motivated researchers for investigation of TCOs [1-3]. Two important TCOs are oxides Indium and indium tin which have important applications like low-emissivity windows electro optic modulators flat-panel displays, electro chromic mirrors, solar cells, and in dissipating inert electricity as of the window on xerographic copiers [4-5]. Indium oxide have broad energy gap of 3.546-3.75eV which is near to other popularly known electronic as well as optical material GaN. whereas numerous preparation along with privilege methods like sputtering and spray pyrolysis, Chemical vapour deposition have been adopted used for preparing skinny films of technologically conducting oxides. The explore into nanoparticles and on quantum dot structure being very wide. Nanoparticles structure has a significant function in determination of their characteristics which has large no. of applications. To improve the presentation of appliance based on indium oxide, here are several geomorphologies of indium oxide through numerous changed dimensional nanostructures, like one dimensional (nanowire) 2dimensional (nanosheets), nanotubes, (3dimensional) nano plates, nano fibers. II. THE PROPOSED WORK Indium Oxide Nanoparticles Production: Nanoparticles of In2O3 were effectively synthesized via pulsed laser ablation method. Starter materials used in preparation were indium nitrate and Ammonium hydroxide. Indium nitrate of (0.2 M) be dissolve in 100 ml of distill H2O and set aside on agitator nearly 2 hr. at 80 0C. after that 2 ml NH4OH (Ammonium hydroxide) intermixed with 20 ml of distill water and subsequently kept exciting for 10 minutes and after that, the ammonium hydroxide solution was mixed gradually in the indium nitrate mixture until the pH was restricted. The mixed content was kept back stimulated for 3 hr at 800C and then the content was mixed for 10 min at 5000 rpm. After that, ethanol was used for washing it. The content which is white colored was dried at 1000C nearly 30 hr. and kept at 3000C for 6 hr. The final content was grinded fine for getting fine particles for analysis. The opportunity of having nanostructures of technologically conducting oxides used for detectors and Ultra Violet lasers as gas sensors for nitrogen dioxide and ozone is quite interesting. The sensitivity of indium oxide towards gases has been observed to enhance considerably by reducing its constituent part size [6]. Characterization techniques used International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395-0056 Volume: 09 Issue: 12 | Dec 2022 www.irjet.net p-ISSN: 2395-0072 Munesh Kumari 1a, Manoj Kumar2b
2.
International Research Journal
of Engineering and Technology (IRJET) e-ISSN: 2395-0056 Volume: 09 Issue: 12 | Dec 2022 www.irjet.net p-ISSN: 2395-0072 © 2022, IRJET | Impact Factor value: 7.529 | ISO 9001:2008 Certified Journal | Page 1473 are TEM (transmission electron microscopy), XRD (X-ray diffraction) and PL (photoluminescence). Indium metal having purity about 99.98 was ablated by laser in a chamber of stainless steel keeping pressure 25 Tor having flow rate of air nearly 0.6L/min .The source of laser used have characteristics like quartet harmonic of a pulsed Nd:YAG having wavelength λ = 266nm, recurrence rate of 10Hz, and a pulsation width of 10ns, and a pulse energy of 50mJ. For ablation laser ray was listening carefully on a spot of 1mm dia on target of indium. A micro porous cellulose nitrate membrane filter was used to collect reaction product [7-8]. The produce was characterized by XRD, TEM and PL spectroscopy. III. RESULT AND DISCUSSIONS Structural Analysis: The XRD spectra of synthesized In2O3 nanoparticles have been shown in figure 1. The nano ranged particles characterized by using XRD collection of X Ray Diffraction data was done with the help of XDS-2000 fine particles X-ray diffractometer by using radiations. For minimization of background signal quartz particular crystal nil surroundings specimen holders was adopted. Sample preparation was done by dispersion of powder on the quartz specimen holder. In XRD report of the sample crystalline peaks observed which matches with diffraction report of cubic indium oxide and with peaks of commercial indium oxide powders can be seen in figure 1. All these reports show that the product obtained by laser ablation was indium oxide .morphological and structural analysis of the produce was studied with help of transmission electron microscopy (TEM). The sample preparation was done by ultrasonic dispersion of powder in methanol for about 2 minutes. A holey carbon-coated copper grid was used for dispersing mixture of methanol powder. Then methanol was evaporated and distribution of particles on carbon film left which is then analyzed with the help of TEM which showed that the diameter of indium oxide nano crystal was about 6.5nm and standard deviation of 3.4nm. (a) (b) Fig. 1 The proposed topologies showing positions of single wall and multi wall CNTs (a-b) UV- Visible Spectrophotometer: Optical property of Indium oxide nano ranged particles which are in range of 272 -705 nm were studied with the help of UV-visible absorption spectroscopy as shown in Fig 2(a).The synthesized Indium oxide (In2O3) have absorbance peak near about at 351 nm. Immersion usually based on a variety of factor like band gap, particle size, oxygen scarcity, lattice twist, and face unevenness along with impurity [15]. The Tauc correlation [16] was implemented to compute the optical energy gap of the indium oxide nanoparticles which is given away in Fig. 2(b) and it was observed near at 3.6eV. 20 25 30 35 40 45 50 55 60 65 70 intensity 2Ɵ 20 25 30 35 40 45 50 55 60 65 70 intensity 2Ɵ
3.
International Research Journal
of Engineering and Technology (IRJET) e-ISSN: 2395-0056 Volume: 09 Issue: 12 | Dec 2022 www.irjet.net p-ISSN: 2395-0072 © 2022, IRJET | Impact Factor value: 7.529 | ISO 9001:2008 Certified Journal | Page 1474 Fig. 2(a) Absorption spectrum of indium oxide nanoparticles Fig. 2(b) Energy gap of indium oxide nanoparticles PL Spectra: The Photoluminescence (PL) emission spectrum of the (In2O3) nanoparticles was measured at room hotness having exciting wavelength closely 350 nm. Photoluminescence (PL) emission crest of indium oxide nanoparticles (NPs) at 380 nm are depicted in figure 3.This can be due to contact of the oxygen vacancy as studied in the earlier writing. To obtain outcome of the Photo Luminance emission of indium oxide nanoparticle formed from irradiative reunite of photo excited hole with electron occupying oxygen gap. the present work, oxygen vacancies will frequently work as deep imperfection provider and be the cause for the generation of new energy level in the energy gap of indium oxide sample. Fig. 3 PL spectra of In2O3 nanoparticles Fig. 4 Characteristic subdivision histogram from the TEM image having mean particle dia 6.5nm with a standard deviation of 3.4nm 0 0.5 1 1.5 2 2.5 3 3.5 4 300 335 370 405 440 475 510 545 580 615 650 685 Absorption Wavelength(nm) 0 200 400 600 800 2 2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5 5.3 (αhv)2 hv (eV) Eg=3.6eV -100 100 300 500 700 900 1100 1300 300 320 340 360 380 400 420 440 460 480 500 520 Photoluminescence Intensity Wavelength (nm) 0 2 4 6 8 10 12 14 16 1 3 5 7 9 11 13 15 17 19 Number of Particles Particles Diameter (nm)
4.
International Research Journal
of Engineering and Technology (IRJET) e-ISSN: 2395-0056 Volume: 09 Issue: 12 | Dec 2022 www.irjet.net p-ISSN: 2395-0072 © 2022, IRJET | Impact Factor value: 7.529 | ISO 9001:2008 Certified Journal | Page 1475 Fig. 5 (PL) Photoluminescence spectra of the laser-ablated sample and the marketable powder. The laser-ablated sample show a weak blue shift of 110 meV, consistent with particle dimension on the order of the Bohr excitationdia Particle size distribution of indiumoxidesample histogram is shown in figure 4 and Bohr diameter estimation of indium oxide was done which was in range between 2.5nm to 5nm [9-10]. Oxide particles of Indium of sample show weak size dependency because diameter of prepared indium oxide was of order of Bohr excitation diameter. Sample also contains large particles of diameter, about 1 µm with small particles having diameter about 30nm to 100nm as confirmed by TEM ablation [11]. Photoluminescence spectra of prepared sample and marketable indium oxide fine particles were observed which were excited at 250 nm as shown in figure 5. Observed PL spectrum of commercial indium oxide powder have peak at about 3.64eV and ablated sample peak has been observed blue shifted to 3.76eV about 110meV shift which can be estimated using ∆E= ⱨ2/8MR2 where ∆E = shift in energy =110 meV, M = (me / + mh / ) = 0.3m0 + 0.6m0, R = the particle radii By putting the value in the used equation, the standard size of the particle is obtained 4nm in diameter which is within accord with the TEM outcome for the prepared indium oxide sample (6.5 nm in dia), which indicate that blue shift have a poor size reliance. IV. CONCLUSION We have prepared indium oxide nano sized particles, an important Transparent Conducting oxide material, its structural, morphological, and optical properties weredemonstrated. The structures confirmation of indium oxide nanoparticles was done with the help of XRD results which demonstrate the major peaks .X-Ray Diffraction and TEM analysis determined that particle were cubic, having signify dia of 6.5 nm. The poor size reliance is discovered by a shift in blue region of about 110 meV in the Photoluminescence spectrum which is constant with a particle size on the order of the Bohr exciton diameter. The optical energy gap of indium oxide which was measured by Tauc correlation was established to be 3.6 eV. REFERENCES [1] B. G. Lewis, and D. C. Paine,” Applications and processing of transparent conducting oxides”. MRS bulletin, vol. 25, no. 8, pp. 22-27, 2000. [2] S.Pissadakis, S. Mailis, L. Reekie, J. S.Wilkinson, R. W. Eason, N. A. Vainos, and G. Kiriakidis, “Permanent holographic recording in indium oxide thin films using 193 nm excimer laser radiation,” Applied Physics A, vol. 69, no. 3, pp.333-336, 1999. [3] D. S. Ginley, and C. Bright, “Transparent conducting oxides,”MRS bulletin, vol. 25, no. 8, pp. 15-18, 2000. [4] K. G. Gopchandran, B. Joseph, J. T .Abraham, P.Koshy, and V. K Vaidyan,” The preparation of transparent electrically conducting indium oxide films by reactive vacuum evaporation,” Vacuum, vol. 48no. 6, pp. 547-550 , 1997. [5] R. G. Gordon, MRS Bulletin, vol. 52.2000. [6] A.Gurlo, M. Ivanovskaya, N. Barsan, M.Schweizer- Berberich, U.Weimar, W.Göpel, and A. Dieguez, “Grain size control in nanocrystalline In2O3 semiconductor gas sensors,” Sensors and Actuators B: Chemical, vol. 44, no.1- 3, pp. 327-333, 1997. [7] M. Hajra, N. N .Chubun, A. G .Chakhovskoi, C. E.Hunt, K .Liu, A. Murali, and V. Zhirnov,” Field emission characterization of silicon tip arrays coated with GaN and diamond nanoparticle clusters,” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 21, no. 1, pp. 458-463, 2003. 0 2 4 6 8 10 12 3.45 3.5 3.55 3.6 3.65 3.7 3.75 3.8 3.85 3.9 3.95 4 4.05 Intensity (a.u) Energy (eV)
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International Research Journal
of Engineering and Technology (IRJET) e-ISSN: 2395-0056 Volume: 09 Issue: 12 | Dec 2022 www.irjet.net p-ISSN: 2395-0072 © 2022, IRJET | Impact Factor value: 7.529 | ISO 9001:2008 Certified Journal | Page 1476 [8] V. J .Leppert, C. J .Zhang, H. W. Lee, I. M. Kennedy,and S. H .Risbud, “Observation of quantum confined excited states of GaN nanocrystals,” Applied physics letters, vol. 72, no. 23, pp. 3035-3037, 1998. [9] I.Hamberg, and C. G. Granqvist,” Evaporated Sn‐doped In2O3 films: Basic optical properties and applications to energy‐efficient windows,” Journal of Applied Physics, vol. 60, no. 11, pp. R123-R160, 1986. [10] H. Zhou, W. Cai, and L. Zhang, “Photoluminescence of indium–oxide nanoparticles dispersed within pores of mesoporous silica,” Applied physics letters, vol. 75, no. 4, pp.495-497, 1999. [11] A. D. Yoffe, “Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems,” Advances in Physics, vol. 42, no. 2, pp.173-262, 1993.
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