please showe all steps, Thank you In this problem, we will study how the insulator thickness affects several parameters of a MOSFET. Consider a NMOS with N_A = 10^16 cm^-3, D_SS = 3 Times 10^10 cm^-2, and an aluminum gate with Phi_G = 4.1 eV. The insulator is made from SiO_2. Plot the following parameters versus oxide thickness, ranging from 1.5 nm to 1 mu m: When the insulator thickness becomes very small, why does the slope of the flat-band voltage become near zero? Is the threshold voltage always positive? Solution 3. No threshold voltage is not always positive but actully it depend that you have to start transister or stop it ..

1. please showe all steps, Thank you In this problem, we will study how the insulator thickness
affects several parameters of a MOSFET. Consider a NMOS with N_A = 10^16 cm^-3, D_SS =
3 Times 10^10 cm^-2, and an aluminum gate with Phi_G = 4.1 eV. The insulator is made from
SiO_2. Plot the following parameters versus oxide thickness, ranging from 1.5 nm to 1 mu m:
When the insulator thickness becomes very small, why does the slope of the flat-band voltage
become near zero? Is the threshold voltage always positive?
Solution
3. No threshold voltage is not always positive but actully it depend that you have to start
transister or stop it .