SPICE MODEL of TPCC8066-H (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TPCC8066-H
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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2. MOSFET MODEL
PSpice model
parameter
LEVEL
L
W
KP
RS
RD
VTO
RDS
TOX
CGSO
CGDO
CBD
MJ
PB
FC
RG
IS
N
RB
PHI
GAMMA
DELTA
ETA
THETA
KAPPA
VMAX
XJ
UO
Model description
Channel Length
Channel Width
Transconductance
Source Ohmic Resistance
Ohmic Drain Resistance
Zero-bias Threshold Voltage
Drain-Source Shunt Resistance
Gate Oxide Thickness
Zero-bias Gate-Source Capacitance
Zero-bias Gate-Drain Capacitance
Zero-bias Bulk-Drain Junction Capacitance
Bulk Junction Grading Coefficient
Bulk Junction Potential
Bulk Junction Forward-bias Capacitance Coefficient
Gate Ohmic Resistance
Bulk Junction Saturation Current
Bulk Junction Emission Coefficient
Bulk Series Resistance
Surface Inversion Potential
Body-effect Parameter
Width effect on Threshold Voltage
Static Feedback on Threshold Voltage
Mobility Modulation
Saturation Field Factor
Maximum Drift Velocity of Carriers
Metallurgical Junction Depth
Surface Mobility
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3. Transconductance Characteristics
Circuit Simulation Result
40.00
Measurement
Simulation
gfs(S)
30.00
20.00
10.00
0.00
0.0
5.0
10.0
15.0
20.0
Drain Current ID (A)
Comparison table
gfs (s)
Measurement
Simulation
Id(A)
%Error
1
2
10.000
13.700
10.389
14.076
3.89
2.74
5
20.800
20.544
-1.23
10
27.500
26.737
-2.77
20
34.900
33.979
-2.64
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3

4. Vgs-Id Characteristics
Circuit Simulation result
20A
15A
10A
5A
0A
0V
1.0V
2.0V
3.0V
4.0V
5.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
TPCC8066-H
V2
10
V1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
4

5. Comparison Graph
Circuit Simulation Result
20.00
Measurement
Simulation
Drain Current ID (A)
15.00
10.00
5.00
0.00
0.0
1.0
2.0
3.0
4.0
5.0
Gate - Source Voltage VGS (V)
Simulation Result
VGS(V)
ID(A)
0.5
1
2
5
10
15
20
Measurement
2.430
2.500
2.600
2.730
2.870
3.000
3.150
Simulation
2.397
2.452
2.534
2.706
2.916
3.089
3.243
%Error
-1.37
-1.92
-2.55
-0.89
1.60
2.98
2.96
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
5

6. Rds(on) Characteristics
Circuit Simulation result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V
20mV
40mV
60mV
70mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
TPCC8066-H
VDS
0Vdc
V1
10
0
Simulation Result
ID =5.5A, VGS = 10V
R DS (on)
m
Measurement
12.400
Simulation
12.400
%Error
0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
6

7. Gate Charge Characteristics
Circuit Simulation result
1
12V
2
30V
8V
20V
4V
10V
>>
0V
0V
0
1
V(W1:2)
4n
2
8n
12n
16n
V(U1:7)
Time*1mA
Evaluation circuit
U1
TPCC8066-H
I1
TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
0
D2
Dbreak
W1
I2
11
VDD
+
W
IOFF = 1mA
ION = 0uA
24
0
Simulation Result
VDD=24V, ID=11A,
VGS=10V
Qgs
nC
Qgd
nC
Qg
nC
Measurement
3.400
1.600
15.000
Simulation
%Error
3.399
1.607
13.329
-0.03
0.44
-11.14
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7

8. Capacitance Characteristics
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V)
0.1
0.2
0.5
1
2
5
10
20
30
Measurement
725.000
635.000
485.000
375.000
285.000
190.000
138.000
100.000
82.000
Simulation
%Error
726.000
633.000
485.800
376.800
283.500
189.200
137.900
100.110
82.900
0.14
-0.31
0.16
0.48
-0.53
-0.42
-0.07
0.11
1.10
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9. Switching Time Characteristics
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
0.96us
V(U1:4)
0.98us
1.00us
V(U1:5)/1.51
1.02us
1.04us
1.06us
Time
Evaluation circuit
L2
RL
50nH
2.73
U1
TPCC8066-H
VDD
15.1Vdc
V2
V1 = 0
V2 = 20
TD = 1u
TR = 5n
TF = 5n
PW = 10u
PER = 20u
R1
4.7
L1
30nH
R2
4.7
0
Simulation Result
ID=5.5A, VDD=15V
VGS=10/0V
ton
ns
Measurement
7.500
Simulation
%Error
7.489
-0.15
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
9

10. Output Characteristics
Circuit Simulation result
20A
10
3.4
4
4.5
16A
5
6
8
3.2
12A
8A
3
4A
VGS=2.7V
0A
0V
0.4V
0.8V
1.2V
1.6V
2.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
TPCC8066-H
V2
V1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
10

11. Forward Current Characteristics
Circuit Simulation Result
100A
10A
1.0A
100mA
0V
-0.2V
I(Vsense)
-0.4V
-0.6V
-0.8V
-1.0V
V_VDS
Evaluation Circuit
Vsense
0Vdc
U1
TPCC8066-H
VDS
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
11

12. Comparison Graph
Circuit Simulation Result
Drain Reverse Current IDR (A)
100.00
Measurement
Simulation
10.00
1.00
0.10
0.0
0.2
0.4
0.6
0.8
1.0
Drain - Source Voltage -VDS (V)
Simulation Result
IDR(A)
0.1
0.2
0.5
1
2
5
10
20
-VDS(V)
Measurement
Simulation
0.660
0.6591
0.678
0.6782
0.703
0.7046
0.725
0.7266
0.755
0.7522
0.800
0.7982
0.850
0.8530
0.945
0.9441
%Error
-0.13
0.03
0.23
0.22
-0.37
-0.22
0.35
-0.09
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
12

13. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.88us
I(R1)
0.96us
1.04us
1.12us
1.20us
1.28us
Time
Evaluation Circuit
R1
50
V1 = -9.35v
V2 = 10.7v
TD = 30ns
TR = 10ns
TF = 10ns
PW = 1us
PER = 100us
U1
TPCC8066-H
V1
0
Compare Measurement vs. Simulation
Parameter
Unit
trj
ns
Measurement
12.000
Simulation
12.192
%Error
1.60
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
13

14. Reverse Recovery Characteristics
Reference
Measurement
Trj= 12.0 (ns)
Trb= 21.6(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
14