1. TPC8014
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPC8014
Lithium Ion Battery Applications
Unit: mm
Portable Equipment Applications
Notebook PC Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 11 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 10 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V
JEDEC ―
Gate-source voltage VGSS ±20 V
JEITA ―
DC (Note 1) ID 11
Drain current A TOSHIBA 2-6J1B
Pulse (Note 1) IDP 44
Drain power dissipation (t = 10 s) Weight: 0.08 g (typ.)
PD 1.9 W
(Note 2a)
Drain power dissipation (t = 10 s)
PD 1.0 W
(Note 2b)
Circuit Configuration
Single pulse avalanche energy
EAS 157 mJ 8 7 6 5
(Note 3)
Avalanche current IAR 11 A
Repetitive avalanche energy
EAR 0.19 mJ
(Note 2a) (Note 4)
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
1 2 3 4
Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
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2. TPC8014
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient
Rth (ch-a) 65.8 °C/W
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
Rth (ch-a) 125 °C/W
(t = 10 s) (Note 2b)
Marking (Note 5)
TPC8014 Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 FR-4
25.4 × 25.4 × 0.8 25.4 × 25.4 × 0.8
(unit: mm) (unit: mm)
(a) (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 11 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
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3. TPC8014
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA
Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA
V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯
Drain-source breakdown voltage V
V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 V
VGS = 4.5 V, ID = 5.5 A ⎯ 15 22
Drain-source ON resistance RDS (ON) mΩ
VGS = 10 V, ID = 5.5 A ⎯ 11 14
Forward transfer admittance |Yfs| VDS = 10 V, ID = 5.5 A 5 10 ⎯ S
Input capacitance Ciss ⎯ 1860 ⎯
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 270 ⎯ pF
Output capacitance Coss ⎯ 320 ⎯
Rise time tr ⎯ 9 ⎯
ID = 5.5 A
VGS 10 V VOUT
Turn-ON time ton 0V ⎯ 19 ⎯
RL = 2.7 Ω
Switching time ns
4.7 Ω
Fall time tf ⎯ 20 ⎯
VDD ∼ 15 V
−
Turn-OFF time toff ⎯ 69 ⎯
Duty < 1%, tw = 10 µs
=
Total gate charge
Qg ⎯ 39 ⎯
(gate-source plus gate-drain)
VDD ∼ 24 V, VGS = 10 V, ID = 11 A
− nC
Gate-source charge 1 Qgs1 ⎯ 4 ⎯
Gate-drain (“miller”) charge Qgd ⎯ 9 ⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 44 A
Forward voltage (diode) VDSF IDR = 11 A, VGS = 0 V ⎯ ⎯ −1.2 V
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4. TPC8014
ID – VDS ID – VDS
20 10
3.4 3.3 10 3.2
3.1
8
3.5 6
16 4 3.2 8 4 3.3
6 3.0
(A)
(A)
8 3.
10 3.1 3.4
ID
ID
12 6
2.9
Drain current
Drain current
3.0
8 4
2.9
2.8
2.8
4 2 2.7
2.7
2.6
VGS = 2.6 V VGS = 2.5 V
0 0
0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0
Drain-source voltage VDS (V) Drain-source voltage VDS (V)
ID – VGS VDS – VGS
20 1
Common source Common source
VDS = 10 V Ta = 25°C
Pulse test Pulse test
(V)
16 0.8
(A)
VDS
ID
12 0.6
Drain-source voltage
Drain current
100
8 0.4
Ta = −55°C
25 2.5
4 0.2 5.5
ID = 11A
0 0
0 0.5 1 1.5 2 2.5 3 2.5 4 0 4 8 12 16 20
Gate-source voltage VGS (V) Gate-source voltage VGS (V)
|Yfs| – ID RDS (ON) – ID
100
Common source
(S)
Ta = 25°C
Pulse test
Forward transfer admittance ⎪Yfs⎪
Drain-source ON resistance
−55°C Tc = 100°C 30
RDS (ON) (mΩ)
VGE = 4.5 V
10 VGS = 10 V
25°C
3
Common source
VDS = 10 V
Pulse test
1
0.1 1 10 100 1 3 10 30 100
Drain current ID (A) Drain current ID (A)
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5. TPC8014
RDS (ON) – Ta (α) IDR – VDS
25 100
5
ID = 11, 5.5, 2.5 A
Drain reverse current IDR (A)
20 10
Drain-source ON resistance
3 1
10 VGS = 10 V
RDS (ON) (Ω)
15 VGS = 4.5 V
10 ID = 11, 5.5, 2.5 A
1
10
5
Common source Common source
Ta = 25°C
Pulse test
Pulse test
0 0.1
−80 −40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1 1.2
Ambient temperature Ta (°C) Drain-source voltage VDS (V)
Capacitance – VDS Vth – Ta
10000 3
(V)
2.5
Ciss
Vth
(pF)
1000 2
Gate threshold voltage
C
Capacitance
1.5
Coss
Crss
100 1
Common source
Common source VDS = 10 V
0.5
VGS = 10 V ID = 1 mA
ID = 1 mA
Pulse test Pulse test
10 0
0.1 1 10 100 −80 −40 0 40 80 120
Drain-source voltage VDS (V) Ambient temperature Ta (°C)
PD – Ta Dynamic input/output characteristics
2 30 30
(1) Device mounted on a Common source
(1) glass-epoxy board (a)
(Note 2a) Ta = 25°C
(W)
25 25
(V)
VGS (V)
1.6 (2) Device mounted on a ID = 11 A
glass-epoxy board (b)
PD
Pulse test
VDS
(Note 2b) VDD = 24 V
20 20
t = 10 s
Drain power dissipation
1.2 VDS
Drain-source voltage
Gate-source voltage
(2)
15 15
12 6
0.8
12
10 10
6
0.4 VDD = 24 V
5 5
0 0 0
0 50 100 150 200 0 10 20 30 40 50 60
Ambient temperature Ta (°C) Total gate charge Qg (nC)
5 2007-01-15
6. TPC8014
rth − tw
1000
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2)
Normalized transient thermal impedance
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
t = 10 s
100
(1)
rth (°C/W)
10
1
Single pulse
0.1
0.001 0.01 0.1 1 10 100 1000
Pulse width tw (S)
Safe operating area
100
1 ms*
ID max (pluse) *
10
(A)
10 ms*
ID
Drain current
1
0.1
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in VDSS max
temperature.
0.01
0.01 0.1 1 10 100
Drain-source voltage VDS (V)
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7. TPC8014
RESTRICTIONS ON PRODUCT USE 030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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