SPICE MODEL of GT8Q101 (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT8Q101
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

2. Model
Model description
parameter
TAU Ambipolar Recombination Lifetime
KP MOS Transconductance
AREA Area of the Device
AGD Gate-Drain Overlap Area
WB Metallurgical Base Width
VT Threshold Voltage
KF Triode Region Factor
CGS Gate-Source Capacitance per Unit Area
COXD Gate-Drain Oxide Capacitance per Unit Area
VTD Gate-Drain Overlap Depletion Threshold
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

3. Transfer Characteristics
Circuit Simulation result
Evaluation circuit
V3
0Vdc
V2
5Vdc
U2
GT8Q101
V1
0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

4. Comparison Graph
Circuit Simulation Result
Simulation Result
Test condition : Vce = 5 V
Vge(V)
Ic(A) Error (%)
Measurement Simulation
1 6.3 6.3093 0.14762
2 6.9 6.8908 -0.13333
5 8.1 8.1124 0.15309
8 9 8.9998 -0.00222
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

5. Fall Time Characteristics
Circuit Simulation result
Evaluation circuit
V3
0V dc
R1
R2 75
U2
15 0
V1 = -1 5 GT 8Q1 01
V4 V2
V2 = 15 60 0V dc
TD = 0
TR = 1n
TF = 1n
PW = 5 u
PE R = 10 0m
0
Test condition Ic=8(A) ,Vce=600(V)
tf Measurement Simulation Error
300 ns 296.732 ns -1.08933
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

6. Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
V3
0Vdc
D1
5.333Adc
I2
Dbreak
U1
PER = 1m W1 GT8Q101
PW = 500u + V2
TF = 10n -
TR = 10n
TD = 0 W 400Vdc
I2 = 2m IOFF = 100uA
I1 = 0 I1 ION = 0A
0
Test condition : Vcc=400(V) ,Ic=5.333(A) ,Vge=20(V)
Measurement Simulation Error(%)
Qge 15 nc 14.897 nc -0.68667
Qgc 25.5 nc 25.035 nc -1.82353
Qg 85 nc 86.069 nc 1.25765
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

7. Saturation Characteristics
Circuit Simulation result
Evaluation circuit
V3
0Vdc
0Adc
U1 I1
GT8Q101
V1
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

8. Comparison Graph
Circuit Simulation Result
Simulation Result
Vce(sat)(V)
Ic(A) Error (%)
Measurement Simulation
1 1.975 1.9755 0.02532
2 2.25 2.2881 1.69333
5 2.7 2.6809 -0.70741
8 3 3.0054 0.18000
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004