This document summarizes the key components, specifications, and test results of an Insulated Gate Bipolar Transistor (IGBT) device. The IGBT has a part number of GT15M321 manufactured by TOSHIBA. Simulation and measurement results are provided for the IGBT's transfer characteristics, gate charge characteristics, forward conduction characteristics, and reverse recovery characteristics. Overall, the simulation results match the measurement results to within 5% error or less.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT15M321
MANUFACTURER: TOSHIBA
* REMARK: Free-Wheeling Diode Special Model
Bee Technologies Inc.
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2. Circuit Configuration
Collector
Gate
Emitter
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3. Transfer Characteristics
Circuit Simulation result
40A
30A
20A
10A
0A
0V 2V 4V 6V 8V 10V
I(U1:C)
V_VGE
Evaluation circuit
U2
DGT15M321_SP
VCE
5Vdc
VGE U1
15Vdc GT15M321
0
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4. Comparison Graph
Simulation result
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
1 4.700 4.755 1.18
2 4.900 4.951 1.05
5 5.350 5.353 0.06
10 5.850 5.828 -0.38
15 6.250 6.207 -0.68
20 6.600 6.538 -0.94
25 6.950 6.838 -1.62
30 7.250 7.115 -1.86
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5. Fall Time Characteristics
Circuit Simulation result
20V
0V
-20V
V(U1:G)
20A
SEL>>
-5A
9.4us 9.8us 10.2us 10.6us 11.0us 11.4us
I(U1:C)
Time
Evaluation circuit
R1
40
VCE
U2 600
Rg DGT15M321_SP
V1 = -15
V2 = 15
TD = 5u V1 100
TR = 10n U1
TF = 10n GT15M321
PW = 4.998u
PER = 100u
0
Test condition: IC=15 (A), VCC=600 (V), VGE=±15 (V), RG=100(Ω)
Parameter Unit Measurement Simulation %Error
tf us 0.200 0.195 -2.479
toff us 0.500 0.484 -3.206
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6. Gate Charge Characteristics
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 20n 40n 60n 80n 100n
V(W1:1)
Time*1mA
Evaluation circuit
V2
0
IC
U2 D2
Dbreak
DGT15M321_SP 15
I1 = 0
I2 = 1m W1 W
TF = 10n + IOFF = 100uA U1 VCC
TR = 10n ION = 0A GT15M321
TD = 0 I2 -
150
PER = 700m
PW = 7m
0
Test condition: VCC=150 (V), IC=15 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 11.000 10.957 -0.391
Qgc nc 27.000 26.783 -0.804
Qg nc 71.000 73.248 3.166
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7. Saturation Characteristics
Circuit Simulation result
40A
30A
20A
10A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(IC)
V(IC:-)
Evaluation circuit
U2
DGT15M321_SP
IC
0Adc
VGE U1
15Vdc GT15M321
0
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8. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
Ic(A) %Error
Measurement Simulation
1 1.350 1.360 0.71
2 1.430 1.425 -0.37
5 1.580 1.570 -0.61
10 1.750 1.750 0.00
15 1.880 1.890 0.52
20 2.010 2.013 0.13
25 2.150 2.138 -0.55
30 2.280 2.285 0.21
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9. Output Characteristics
Circuit Simulation result
40A
15V
20V 10V
30A
8V VGE=7V
20A
10A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(R1)
V_VCE
Evaluation circuit
R1
0.001m
U2
DGT15M321_SP VCE
5Vdc
VGE U1
0 GT15M321
0
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10. FWD Forward Current Characteristics
Circuit Simulation result
100A
80A
60A
40A
20A
0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V 2.4V
I(Vsense)
V(EC)
Evaluation circuit
Vsense
V1
EC
0Vdc
0Vdc
U2
V2 DGT15M321_SP U1
GT15M321
0
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11. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
1 0.800 0.799 -0.11
2 0.850 0.852 0.27
5 0.940 0.942 0.22
10 1.040 1.034 -0.54
20 1.170 1.169 -0.06
50 1.485 1.490 0.32
100 1.965 1.963 -0.09
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12. Reverse Recovery Characteristics
Circuit Simulation result
16A
0A
-12A
4.4us 5.2us 6.0us 6.8us 7.6us 8.4us
I(Vsense)
Time
Evaluation circuit
R1 Vsense
PARAMETERS:
V1 = -600V TR = 1.5u
40
V2 = 600V
TD = 5.15us U1
DGT15M321_SP
TR = {TR}
TF = 10n V1
VPULSE
PW = 10u
PER = 1ms
0
Test condition: VCC=600 (V), IF=15 (A) –di/dt=20 A/usec
Parameter Unit Measurement Simulation %Error
trr us 0.700 0.701 0.083
Irr A 9.500 9.510 0.11
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