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SPICE MODEL of 2SA1680 in SPICE PARK

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SPICE MODEL of 2SA1680 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SA1680 in SPICE PARK

  1. 1. Device Modeling Report COMPONENTS: TRANSISTOR PART NUMBER: 2SA1680 MANUFACTURER: TOSHIBA Bee Technologies Inc.All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  2. 2. TRANSISTOR MODEL PSpice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient FC Coefficient for Onset of Forward-bias Depletion Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  3. 3. ReverseReverse Early Voltage Characteristic Ic (X2,Y2) Y=aX+b (X1,Y1) VAR Vce VAF All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  4. 4. Reverse DC Beta Characteristic (Ie vs. hFE) Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  5. 5. ForwardForward Early Voltage Characteristic Ic (X2,Y2) Y=aX+b (X1,Y1) Vce VAF All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  6. 6. C-B Capacitance Characteristics Measurement SimulationE-B Capacitance Characteristics Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  7. 7. Transistor hFE-IC Characteristics Circuit Simulation Result 500 100 10 5.0 -1.0mA -5.0A IC(Q1)/ IB(Q1) IC(Q1)Evaluation Circuit Q1 Q2SA1680 I1 V1 0Adc 5Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  8. 8. Comparison Graph Circuit Simulation Result 1000 Measurement Simulation 100hFE 10 0.001 0.01 0.1 1 10 - IC(A)Simulation Result hFE Ic(A) Error(%) Measurement Simulation -0.001 200.000 196.818 -1.591 -0.002 200.000 196.753 -1.624 -0.005 200.000 196.668 -1.666 -0.010 200.000 196.603 -1.699 -0.020 197.000 196.504 -0.252 -0.050 190.000 193.958 2.083 -0.100 188.000 189.885 1.003 -0.200 180.000 181.965 1.092 -0.500 155.000 158.984 2.570 -1.000 120.000 122.061 1.718 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  9. 9. VCE(Sat)-IC Characteristics Circuit Simulation Result -10V -10mV -1.0mA -5.0A V(Q1:c) IC(Q1) Evaluation Circuit VC Q1 Q2SA1680 F1 0Adc F 20 I1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  10. 10. Comparison Graph Circuit Simulation Result 10 Measurement Simulation 1 - VCE(SAT) (V) 0.1 0.01 0.001 0.01 0.1 - IC(A)Simulation Result VCE(sat) IC(A) Error(%) Measurement Simulation -0.001 -0.025 -0.025 0.000 -0.01 -0.023 -0.023 0.000 -0.1 -0.045 -0.046 2.222 -1 -0.300 -0.301 0.333 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  11. 11. VBE(Sat)-IC Characteristics Circuit Simulation Result -10V -10mV -1.0mA -5.0A V(Q1:b) IC(Q1) Evaluation Circuit VC Q1 Q2SA1680 F1 0Adc F 20 I1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  12. 12. Comparison Graph Circuit Simulation Result 10 Measurement Simulation 1- VBE(SAT) (V) 0.1 0.01 0.001 0.01 0.1 1 - IC(A)Simulation Result VBE(sat) IC(A) Error(%) Measurement Simulation -0.001 -0.600 -0.621 3.500 -0.01 -0.660 -0.687 4.091 -0.1 -0.740 -0.767 3.649 -1 -0.970 -0.978 0.825 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  13. 13. Switching CharacteristicsCircuit simulation result 1.5A 1.0A 0.5A 0A 20.8us 21.0us 21.2us 21.4us 21.6us 21.8us -IB(Q1) -IC(Q1) TimeEvaluation circuit L1 R3 R1 50nH 30 L2 50 Q1 PER = 50us R2 Q2SA1680 50nH PW = 20us TF = 15ns V2 TR = 15ns 97 -30 TD = 1us V2 = 6 V1 V1 = -2 0Simulation result Measurement Simulation %Error tstg (us) 0.300 0.292 -2.667 tf (us) 0.100 0.098 -2.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  14. 14. Output Characteristics Circuit Simulation Result -2.0A 20mA -1.6A 15mA -1.2A 10mA 6mA -0.8A 4mA IB=2mA -0.4A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V IC(Q1) V_V1Evaluation Circuit Q1 Q2SA1680 I1 V1 0Adc 5Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  15. 15. Output Characteristics Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

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