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Device Modeling Report




COMPONENTS:BIPOLAR JUNCTION TRANSISTOR
PART NUMBER:2N3055
MANUFACTURER: STMicroelectronics




                 Bee Technologies Inc.


   All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Pspice
  model                                Model description
parameter
    IS       Saturation Current
    BF       Ideal Maximum Forward Beta
    NF       Forward Current Emission Coefficient
   VAF       Forward Early Voltage
   IKF       Forward Beta Roll-off Knee Current
   ISE       Non-ideal Base-Emitter Diode Saturation Current
   NE        Non-ideal Base-Emitter Diode Emission Coefficient
   BR        Ideal Maximum Reverse Beta
   NR        Reverse Emission Coefficient
   VAR       Reverse Early Voltage
   IKR       Reverse Beta Roll-off Knee Current
   ISC       Non-ideal Base-Collector Diode Saturation Current
   NC        Non-ideal Base-Collector Diode Emission Coefficient
   NK        Forward Beta Roll-off Slope Exponent
   RE        Emitter Resistance
   RB        Base Resistance
   RC        Series Collector Resistance
   CJE       Zero-bias Emitter-Base Junction Capacitance
   VJE       Emitter-Base Junction Potential
   MJE       Emitter-Base Junction Grading Coefficient
   CJC       Zero-bias Collector-Base Junction Capacitance
   VJC       Collector-base Junction Potential
  MJC        Collector-base Junction Grading Coefficient
    FC       Coefficient for Onset of Forward-bias Depletion
             Capacitance
   TF        Forward Transit Time
  XTF        Coefficient for TF Dependency on Vce
  VTF        Voltage for TF Dependency on Vce
  ITF        Current for TF Dependency on Ic
  PTF        Excess Phase at f=1/2pi*TF
  TR         Reverse Transit Time
  EG         Activation Energy
  XTB        Forward Beta Temperature Coefficient
  XTI        Temperature Coefficient for IS
            All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Reverse

Reverse Early Voltage Characteristic




                                      Ic




                                                   VAR
                                                                   Vce



                                                     Y=aX+b
                                 (X1,Y1)
                            (X2,Y2)


            All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Reverse DC Beta Characteristic (Ie vs. hFE)




                  Measurement
                  Simulation




            All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Forward

Forward Early Voltage Characteristic




                                 Ic   (X2,Y2)

             Y=aX+b                                           (X1,Y1)




                                                              Vce
                    VAF




            All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Forward DC Beta Characteristic



                Measurement
                Simulation




Vbe(sat) Voltage Characteristic




                   Measurement
                   Simulation




            All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Vce(sat) Voltage Characteristic



                      Measurement
                      Simulation




C-B Capacitance Characteristic



                                                  Measurement
                                                  Simulation




            All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
E-B Capacitance Characteristic



                                                  Measurement
                                                  Simulation




           All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
BJT Ic-hFE Characteristics

Evaluation circuit




                                              Q1
                                             Q2N3055

                                                                   4          V1
                     I1

                 7




                                              0




Circuit simulation result




                                                                 Simulation




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Table



                             hFE                    hFE
        Ifwd(A)                                                         %Error
                         Measurement             Simulation
          0.1                   115                 112.753              1.954

          0.2                   120                 118.577              1.186

          0.5                   110                 110.505             -0.459

           1                    90                  89.386               0.682

           2                    60                  60.289              -0.482

           5                    28                  27.206               2.836

           10                  12.5                 12.862              -2.896




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
BJT Vce(sat) voltage& Vbe(sat) voltage Characteristics

Evaluation circuit


                                                              I2


                                                                   4


                                             Q1
                                            Q2N3055


                 I1

                0.4




                                            0



Circuit simulation result




                                                       Vce(sat)




Comparison Table


      Ic=4A,Ib=0.4A            Measurement              Simulation             %Error
        Vce(sat) (V)               1(max)                 0.401945               0

                All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
BJT Output Characteristic




Circuit simulation result




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

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SPICE MODEL of 2N3055 in SPICE PARK

  • 1. Device Modeling Report COMPONENTS:BIPOLAR JUNCTION TRANSISTOR PART NUMBER:2N3055 MANUFACTURER: STMicroelectronics Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 2. Pspice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient FC Coefficient for Onset of Forward-bias Depletion Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 3. Reverse Reverse Early Voltage Characteristic Ic VAR Vce Y=aX+b (X1,Y1) (X2,Y2) All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 4. Reverse DC Beta Characteristic (Ie vs. hFE) Measurement Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 5. Forward Forward Early Voltage Characteristic Ic (X2,Y2) Y=aX+b (X1,Y1) Vce VAF All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 6. Forward DC Beta Characteristic Measurement Simulation Vbe(sat) Voltage Characteristic Measurement Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 7. Vce(sat) Voltage Characteristic Measurement Simulation C-B Capacitance Characteristic Measurement Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 8. E-B Capacitance Characteristic Measurement Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 9. BJT Ic-hFE Characteristics Evaluation circuit Q1 Q2N3055 4 V1 I1 7 0 Circuit simulation result Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 10. Comparison Table hFE hFE Ifwd(A) %Error Measurement Simulation 0.1 115 112.753 1.954 0.2 120 118.577 1.186 0.5 110 110.505 -0.459 1 90 89.386 0.682 2 60 60.289 -0.482 5 28 27.206 2.836 10 12.5 12.862 -2.896 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 11. BJT Vce(sat) voltage& Vbe(sat) voltage Characteristics Evaluation circuit I2 4 Q1 Q2N3055 I1 0.4 0 Circuit simulation result Vce(sat) Comparison Table Ic=4A,Ib=0.4A Measurement Simulation %Error Vce(sat) (V) 1(max) 0.401945 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 12. BJT Output Characteristic Circuit simulation result All Rights Reserved Copyright (C) Bee Technologies Inc. 2005