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IMR, Tohoku University
Takeshi Nishimatsu
dielectrics	
piezoelectrics	
pyroelectrics
ferroelectrics (switchable)
Because BaTiO3 base and PbZrxTi1-xO3 (PZT) base
ferroelectric materials has good properties for applications
all above, there are many electronics devices using these
materials. Traditionally, Japanese companies have high
market shares in such ferroelectric ceramics industries.	
High
Symmetry
Low
polarity	 inversion	
#of
classes	
crystal family	
cubic	 hexagonal	tetragonal	
rhombo

hedral	
ortho	
mono	
tri.	
nonpolar

crystal

(22)
yes

(11)	
11	 Oh	 Th	 D6h	C6h	D4h	C4h	D3d	C3i	D2h	C2h	 Ci	
no

(21)	
11	
O	
T	
D6
D3h	
C3h	
D4
D2d	
S4	 D3	 D2	
Td	
polar

(pyro)

crystal

(10)	
10 C6v	 C6	 C4v	 C4	 C3v	 C3	 C2v	
C2
Cs	
C1	
white background: piezoelectric red letter: pyroelectric
}  Polarized by an applied
external electric field
}  Switch-off electric field

→ polarization vanishes
}  Application: multi-layer
ceramics capacitor
(MLCC) BaTiO3-base
}  Application: electret
microphone or

capacitor

microphone	
Dielectrics
}  Piezoelectric effect:

polarization develops

in response to applied mechanical stress.
}  Inverse piezoelectric effect: strain develops
in response of applied electric field.
}  Simple Td GaAs can have piezoelectricity.
}  Applications: pressure sensor (Langasite,
La3Ga5SiO14), crystal oscillator (quartz SiO2)
}  Ceramics: piezoelectric speaker, ceramic
oscillator, sonar, acceleration and gyro
sensor, supersonic vibrator, etc., etc…..
Piezoelectrics
After catalog from muRata P82e.pdf
2011-06-30. Underlines by TN.
}  Polar crystals
}  Polarization can be

slightly changed by IR.
}  Application:IR sensor







}  Polarization can be

switched by external

electric field →

ferroelectrics	
Pyroelectrics	 IR	
IR sensor for
lights (in IMR)	
Phase transition of
pyroelectrics.
}  Polarization can be

switched by external

electric field.
}  Spontaneous

polarization (Pr) remains at E=0.
}  Polarization can have some easy directions
according to the crystal structure.
}  In finite systems, domain structures are
formed to avoid depolarization field.
What are

ferroelectrics?
}  Ferroelectric RAM is a
random-access memory
using a ferroelectric
capacitor and its
histeresis to achieve
non-volatility.
}  Faster and lower voltage
than Flash memory.
}  Down sizing →

Higher Density →

Replace DRAM →
Normally-off Computing	
(Fast, Non-volatile, Without refresh)
What is electrocaloric effect?	
Inverse effect of pyroelectric effect
Application: Solid state cooling
Experimentally observed temperature dependence of lattice constants
for BaTiO3. There are three first-order phase transitions. the cubic to
tetragonal phase transition is nearly second-order one. After [H. E. Kay
and P. Vousden: Philos. Mag. 40, 1019 (1949)].
ferroelectric⇔paraelectric
After [Gen Shirane, Sadao Hoshino, and Kazuo Suzuki: Phys. Rev. 80, 1105 (1950)]	
ferroelectric⇔paraelectric
}  Various applications of ferroelectric thin-
films: multi-layer ceramics capacitors (MLCC),
nonvolatile FeRAMs, nanoactuators, etc.
}  Down-sizing of FeRAMs (nano-capacitors of
ferroelectric thin films) is highly demanded.
After [J. F. Scott: Ferroelectric Memories (Springer, 2000)]
}  Develope of fast molecular dynamics (MD) code
which can simulate ferroelectric thin-film
capacitors for a realistic system size (> 100 nm)
and a realistic time span (> 100 ns).
}  Clarify the effect of dead layers between
ferroelectrics and electrodes.
}  Predict properties of ferroelectrics
◦  dielectric constant
◦  domain structures
◦  effects of epitaxial strains
◦  pyroelectric effect
◦  electrocaloric effect
◦  etc, etc…
}  Parallelized with OpenMP http://OpenMP.org/
}  FFTW http://www.fftw.org/
}  Object Oriented Programming (OOP) with
Fortran 95/2003
}  GNU autotools (autoconf and automake)
◦  Easy to compile feram with ./configure && make
◦  Multi Platform using C preprocessor (CPP)

⇒ Available on PC Linux, Hitachi SR16000,

Fujitsu FX10, etc.
}  Source code is version-controlled under
Subversion in http://SourceForge.net/
}  It’s free software!
Home page of feram
Papers using feram
}  Investigate ferroelectric BaTiO3, PbTiO3, etc. with
first-principles calculations and construct an
effective Hamiltonian with 25 parameters
◦  Using ABINIT http://www.abinit.org/
–  Plane wave: Ecut=60 Hartree, on 8x8x8 k-points
–  Pseudopotentials http://opium.sf.net/ (Rappe et al.)
–  GGA (Wu and Cohen). LDA and GGA (PBE) do not work well.
–  Basically, absolute 0 K properties.
}  MD: time evolution of the effective Hamiltonian
◦  Original feram http://loto.sf.net/feram/
◦  realistic system size (> 100 nm) and a realistic time span
(> 100 ns)
◦  Temperature, pressure, strain, external electric field
◦  bulk and thin-film
After [T. Hashimoto,
T. Nishimatsu et al.:
Jpn. J. Appl. Phys. 43,
6785 (2004)]	
electric
polarization
(dipole)	
Total-energy surface (can be calculated
with first-principles calculations.)
BaTiO3	 GGA (Wu and Cohen)
}  BaTiO3 has shallower

total-energy surface.
}  Most stable direction:

[111] 

}  PbTiO3 has deeper

total-energy surface.
}  Most stable direction:

[001]	
BaTiO3 vs. PbTiO3	
GGA (Wu and Cohen)
Other many first-principles calculations
required for determination of parameters	
}  Lattice constants, elastic coefficients
}  Inter-atomic force constant (IFC) matrix Φ(k)
for determination of shor-range interactions.
}  etc. etc.
With four parameters I can fit an elephant,

and with five I can make him wiggle his trunk.

-- John von Neumann

It’s quite tough to determine 25
parameters only from first principles.
-- Takeshi Nishimatsu :-)
http://www.lanl.gov/history/atomicbomb/images/NeumannL.GIF
}  Perovskite ABO3: 15N+6 degrees of freedom
◦  5 atoms in a unit cell
◦  each atom can move x, y, z 3 directions
◦  N unit cells in a super cell
◦  6 components of strain
}  Coarse-graining: 6N+6 degrees of freedom
◦  One dipole vector Z*u(R) on each unit cell
◦  One acoustic displacement vector w(R) on each u.c.
See [W. Zhong, D. Vanderbilt, and K. M. Rabe, Phys. Rev. B 52, 6301 (1995)].
Super cell calculations with
array of dipoles (Periodic
boundary condition)
Parameters for BaTiO3 [Takeshi Nishimatsu et al.: PRB 82, 134106 (2010)]
Simplified flow chart for calculating
forces on u(R). FFT and IFFT enable
rapid calculation of long-range
dipole-dipole interactions.
Real space: O(N2)
Reciprocal space with FFT: O(NlogN)	
See [U. V. Waghmare et al.: Ferroelectrics 291, 187 (2003)].
}  Only with long-range

dipole-dipole
interactions, the
minimum is at

M-point (antiferro).
}  Adding short-rang
interactions, the
minimum

goes to

Γ-point.
Only with long-range
dipole-dipole interactions	
long-rang interactions
+ short-range interactions
M	
Γ	 BaTiO3
3-dimentional simple cubic (sc)
dipole lattice	
M-point is the minimum.
Electrode can be considered as
electrostatic mirrors
See Nishimatsu et al.: PRB 78, 104104 (2008)
RESULTS of MD SIMULATIONS

BaTiO3 (from GGA (Wu & Cohen))	
Experiment	
} MD simulation
€
εαβ = (ε∞)αβ +
V
ε0kBT
Pα Pα − Pα Pα( )
-60
-40
-20
0
20
40
-300 -200 -100 0 100 200 300
Pz[µC/cm2
]
E [kV/cm]
bulk 32×32×32, T = 360 K
bulk 32×32×32, T = 460 K
bulk 32×32×32, T = 560 K
T = 100 K
With dead layers,

the z-polarized

state is no longer

the ground state

for a ferroelectric

capacitor

[BaTiO3, 16x16x

(l=63,d=1)]	
Dead layer à
PbTiO3
Frozen 90° degree domain structures
of PbTiO3 (snapshot at 300 K)	
JPSJ 81, 124702 (2012)
Experimentally observed 90° degree
domain structures of PbTiO3
PbTiO3の90°ドメイン(2)	
HAADF-STEM image around edge dislocations with an a-domain.
After [T. Kiguchi et al.: Sci. Technol. Adv. Mater. 12 (2011) 034413].
600℃成膜時ミスフィット大→室温a軸はミスフィット小→転移→aドメイン
PbTiO3 90°ドメインのドメイン壁の厚さ	
厚さ→1〜2ユニットセル
}  BaTiO3, supercell of 96×96×96 unit cells
}  Constant T canonical ensemble MD
calculation under external electric field Ez
}  After that turn off Ez=0, constant energy
micro-canonical ensemble MD calculation
(leap-frog method)
}  External electric field: Ez=0〜500 kV/cm
}  Coarse graining → under estimate Cv →

over setimate ΔT → correction
Computational conditions of
direct MD simulations of ECE
Results of 【direct】 MD calculations	
Smaller super cell size,
larger fluctuation of ΔT
BaTiO3	
-35
-30
-25
-20
-15
-10
-5
0
300 350 400 450 500 550 600 650 700
∆T[K]
T [K]
BaTiO3 160→60 kV/cm
indirect
MD × 2/5
optimization × 1/5
MD
optimization
x 2/5
correction	
x 1/5
correction
-50
-40
-30
-20
-10
0
10
20
0 100 200 300 400 500 600 700 800 900
-10
-8
-6
-4
-2
0
2
4∆T[K]
∆Tcorrected[K]
T [K]
BaTiO3 300→0 kV/cm
[001]
[110]
[111]
Anisotropic effect of E
Results of direct MD calculations of ECE	
BaTiO3	
-12
-10
-8
-6
-4
-2
0
300 400 500 600 700 800 900
-60
-50
-40
-30
-20
-10
0
∆Tcorrected[K]
∆T[K]
T [K]
5→0 kV/cm
50→0 kV/cm
100→0 kV/cm
200→0 kV/cm
300→0 kV/cm
400→0 kV/cm
500→0 kV/cm
Effective temperature
rang is narrower for
smaller E field.
}  We developed "feram", a fast simulator for
perovskite-type ferroelectric bulks and thin films.
}  Molecular dynamics (MD) simulation with

first-principles-based effective Hamiltonian.
}  Phase transitions of bulk BaTiO3 and PbTiO3.
}  Thin-film capacitor with perfect and imperfect
short-circuited electrodes.
}  Electrocaloric effect
}  etc, etc…	
Summary	
feram is free software!!! You can freely get it
from http://loto.sourceforge.net/feram/ .

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Molecular dynamics simulations of ferroelectrics with feram code

  • 2. dielectrics piezoelectrics pyroelectrics ferroelectrics (switchable) Because BaTiO3 base and PbZrxTi1-xO3 (PZT) base ferroelectric materials has good properties for applications all above, there are many electronics devices using these materials. Traditionally, Japanese companies have high market shares in such ferroelectric ceramics industries. High Symmetry Low
  • 3. polarity inversion #of classes crystal family cubic hexagonal tetragonal rhombo
 hedral ortho mono tri. nonpolar
 crystal
 (22) yes
 (11) 11 Oh Th D6h C6h D4h C4h D3d C3i D2h C2h Ci no
 (21) 11 O T D6 D3h C3h D4 D2d S4 D3 D2 Td polar
 (pyro)
 crystal
 (10) 10 C6v C6 C4v C4 C3v C3 C2v C2 Cs C1 white background: piezoelectric red letter: pyroelectric
  • 4. }  Polarized by an applied external electric field }  Switch-off electric field
 → polarization vanishes }  Application: multi-layer ceramics capacitor (MLCC) BaTiO3-base }  Application: electret microphone or
 capacitor
 microphone Dielectrics
  • 5. }  Piezoelectric effect:
 polarization develops
 in response to applied mechanical stress. }  Inverse piezoelectric effect: strain develops in response of applied electric field. }  Simple Td GaAs can have piezoelectricity. }  Applications: pressure sensor (Langasite, La3Ga5SiO14), crystal oscillator (quartz SiO2) }  Ceramics: piezoelectric speaker, ceramic oscillator, sonar, acceleration and gyro sensor, supersonic vibrator, etc., etc….. Piezoelectrics
  • 6. After catalog from muRata P82e.pdf 2011-06-30. Underlines by TN.
  • 7. }  Polar crystals }  Polarization can be
 slightly changed by IR. }  Application:IR sensor
 
 
 
 }  Polarization can be
 switched by external
 electric field →
 ferroelectrics Pyroelectrics IR IR sensor for lights (in IMR) Phase transition of pyroelectrics.
  • 8. }  Polarization can be
 switched by external
 electric field. }  Spontaneous
 polarization (Pr) remains at E=0. }  Polarization can have some easy directions according to the crystal structure. }  In finite systems, domain structures are formed to avoid depolarization field. What are
 ferroelectrics?
  • 9. }  Ferroelectric RAM is a random-access memory using a ferroelectric capacitor and its histeresis to achieve non-volatility. }  Faster and lower voltage than Flash memory. }  Down sizing →
 Higher Density →
 Replace DRAM → Normally-off Computing (Fast, Non-volatile, Without refresh)
  • 10. What is electrocaloric effect? Inverse effect of pyroelectric effect Application: Solid state cooling
  • 11. Experimentally observed temperature dependence of lattice constants for BaTiO3. There are three first-order phase transitions. the cubic to tetragonal phase transition is nearly second-order one. After [H. E. Kay and P. Vousden: Philos. Mag. 40, 1019 (1949)]. ferroelectric⇔paraelectric
  • 12. After [Gen Shirane, Sadao Hoshino, and Kazuo Suzuki: Phys. Rev. 80, 1105 (1950)] ferroelectric⇔paraelectric
  • 13. }  Various applications of ferroelectric thin- films: multi-layer ceramics capacitors (MLCC), nonvolatile FeRAMs, nanoactuators, etc. }  Down-sizing of FeRAMs (nano-capacitors of ferroelectric thin films) is highly demanded. After [J. F. Scott: Ferroelectric Memories (Springer, 2000)]
  • 14. }  Develope of fast molecular dynamics (MD) code which can simulate ferroelectric thin-film capacitors for a realistic system size (> 100 nm) and a realistic time span (> 100 ns). }  Clarify the effect of dead layers between ferroelectrics and electrodes. }  Predict properties of ferroelectrics ◦  dielectric constant ◦  domain structures ◦  effects of epitaxial strains ◦  pyroelectric effect ◦  electrocaloric effect ◦  etc, etc…
  • 15. }  Parallelized with OpenMP http://OpenMP.org/ }  FFTW http://www.fftw.org/ }  Object Oriented Programming (OOP) with Fortran 95/2003 }  GNU autotools (autoconf and automake) ◦  Easy to compile feram with ./configure && make ◦  Multi Platform using C preprocessor (CPP)
 ⇒ Available on PC Linux, Hitachi SR16000,
 Fujitsu FX10, etc. }  Source code is version-controlled under Subversion in http://SourceForge.net/ }  It’s free software!
  • 16. Home page of feram
  • 18. }  Investigate ferroelectric BaTiO3, PbTiO3, etc. with first-principles calculations and construct an effective Hamiltonian with 25 parameters ◦  Using ABINIT http://www.abinit.org/ –  Plane wave: Ecut=60 Hartree, on 8x8x8 k-points –  Pseudopotentials http://opium.sf.net/ (Rappe et al.) –  GGA (Wu and Cohen). LDA and GGA (PBE) do not work well. –  Basically, absolute 0 K properties. }  MD: time evolution of the effective Hamiltonian ◦  Original feram http://loto.sf.net/feram/ ◦  realistic system size (> 100 nm) and a realistic time span (> 100 ns) ◦  Temperature, pressure, strain, external electric field ◦  bulk and thin-film
  • 19. After [T. Hashimoto, T. Nishimatsu et al.: Jpn. J. Appl. Phys. 43, 6785 (2004)] electric polarization (dipole) Total-energy surface (can be calculated with first-principles calculations.)
  • 20. BaTiO3 GGA (Wu and Cohen)
  • 21. }  BaTiO3 has shallower
 total-energy surface. }  Most stable direction:
 [111] 
 }  PbTiO3 has deeper
 total-energy surface. }  Most stable direction:
 [001] BaTiO3 vs. PbTiO3 GGA (Wu and Cohen)
  • 22. Other many first-principles calculations required for determination of parameters }  Lattice constants, elastic coefficients }  Inter-atomic force constant (IFC) matrix Φ(k) for determination of shor-range interactions. }  etc. etc. With four parameters I can fit an elephant,
 and with five I can make him wiggle his trunk.
 -- John von Neumann
 It’s quite tough to determine 25 parameters only from first principles. -- Takeshi Nishimatsu :-) http://www.lanl.gov/history/atomicbomb/images/NeumannL.GIF
  • 23. }  Perovskite ABO3: 15N+6 degrees of freedom ◦  5 atoms in a unit cell ◦  each atom can move x, y, z 3 directions ◦  N unit cells in a super cell ◦  6 components of strain }  Coarse-graining: 6N+6 degrees of freedom ◦  One dipole vector Z*u(R) on each unit cell ◦  One acoustic displacement vector w(R) on each u.c. See [W. Zhong, D. Vanderbilt, and K. M. Rabe, Phys. Rev. B 52, 6301 (1995)].
  • 24. Super cell calculations with array of dipoles (Periodic boundary condition) Parameters for BaTiO3 [Takeshi Nishimatsu et al.: PRB 82, 134106 (2010)]
  • 25. Simplified flow chart for calculating forces on u(R). FFT and IFFT enable rapid calculation of long-range dipole-dipole interactions. Real space: O(N2) Reciprocal space with FFT: O(NlogN) See [U. V. Waghmare et al.: Ferroelectrics 291, 187 (2003)].
  • 26. }  Only with long-range
 dipole-dipole interactions, the minimum is at
 M-point (antiferro). }  Adding short-rang interactions, the minimum
 goes to
 Γ-point. Only with long-range dipole-dipole interactions long-rang interactions + short-range interactions M Γ BaTiO3
  • 27. 3-dimentional simple cubic (sc) dipole lattice M-point is the minimum.
  • 28. Electrode can be considered as electrostatic mirrors See Nishimatsu et al.: PRB 78, 104104 (2008)
  • 29.
  • 30. RESULTS of MD SIMULATIONS
 BaTiO3 (from GGA (Wu & Cohen)) Experiment } MD simulation
  • 31. € εαβ = (ε∞)αβ + V ε0kBT Pα Pα − Pα Pα( )
  • 32. -60 -40 -20 0 20 40 -300 -200 -100 0 100 200 300 Pz[µC/cm2 ] E [kV/cm] bulk 32×32×32, T = 360 K bulk 32×32×32, T = 460 K bulk 32×32×32, T = 560 K
  • 33. T = 100 K
  • 34. With dead layers,
 the z-polarized
 state is no longer
 the ground state
 for a ferroelectric
 capacitor
 [BaTiO3, 16x16x
 (l=63,d=1)] Dead layer à
  • 35.
  • 36.
  • 38. Frozen 90° degree domain structures of PbTiO3 (snapshot at 300 K) JPSJ 81, 124702 (2012)
  • 39. Experimentally observed 90° degree domain structures of PbTiO3
  • 40. PbTiO3の90°ドメイン(2) HAADF-STEM image around edge dislocations with an a-domain. After [T. Kiguchi et al.: Sci. Technol. Adv. Mater. 12 (2011) 034413]. 600℃成膜時ミスフィット大→室温a軸はミスフィット小→転移→aドメイン
  • 42. }  BaTiO3, supercell of 96×96×96 unit cells }  Constant T canonical ensemble MD calculation under external electric field Ez }  After that turn off Ez=0, constant energy micro-canonical ensemble MD calculation (leap-frog method) }  External electric field: Ez=0〜500 kV/cm }  Coarse graining → under estimate Cv →
 over setimate ΔT → correction Computational conditions of direct MD simulations of ECE
  • 43. Results of 【direct】 MD calculations Smaller super cell size, larger fluctuation of ΔT BaTiO3 -35 -30 -25 -20 -15 -10 -5 0 300 350 400 450 500 550 600 650 700 ∆T[K] T [K] BaTiO3 160→60 kV/cm indirect MD × 2/5 optimization × 1/5 MD optimization x 2/5 correction x 1/5 correction
  • 44. -50 -40 -30 -20 -10 0 10 20 0 100 200 300 400 500 600 700 800 900 -10 -8 -6 -4 -2 0 2 4∆T[K] ∆Tcorrected[K] T [K] BaTiO3 300→0 kV/cm [001] [110] [111] Anisotropic effect of E
  • 45. Results of direct MD calculations of ECE BaTiO3 -12 -10 -8 -6 -4 -2 0 300 400 500 600 700 800 900 -60 -50 -40 -30 -20 -10 0 ∆Tcorrected[K] ∆T[K] T [K] 5→0 kV/cm 50→0 kV/cm 100→0 kV/cm 200→0 kV/cm 300→0 kV/cm 400→0 kV/cm 500→0 kV/cm Effective temperature rang is narrower for smaller E field.
  • 46. }  We developed "feram", a fast simulator for perovskite-type ferroelectric bulks and thin films. }  Molecular dynamics (MD) simulation with
 first-principles-based effective Hamiltonian. }  Phase transitions of bulk BaTiO3 and PbTiO3. }  Thin-film capacitor with perfect and imperfect short-circuited electrodes. }  Electrocaloric effect }  etc, etc… Summary feram is free software!!! You can freely get it from http://loto.sourceforge.net/feram/ .