N Herbots Us Patent6613667

A New Epitaxial Silicon Dioxide 2-D Nanophase nucleated on OH-(1x1) Silicon(100) for MOS technology Identified Via 3.05 MeV Ion Channeling and Blocking and a New 3-D Multristring Code. ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

Acknowledgments ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],Scientific Collaborators Barry Wilkens; I-Beam Lab Dr. Max Sidorov- HRTEM analysis Dr. Kate Queeney & Yves Chabal Infra-Red Spectroscopy Qian Bradley - expertise with avdanced programming Mark Blanchfield Undergraduate/ REU students : Mike Grams (ASU PhD’04), A.Tregre (LSU), E. McDaniel (ASU PhD 05, J. Pucci (MIT), T. Michaels, G. Bell, Murodck Hart, David Sell Funding Research Corporation Award (1998-2003) Motorala, Eureka fund (1994-2001) Intel, Inc. Donation (1998-present) Medtronic Donation (1998-present)

Outline ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

Background: Previous Work &Motivation ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],* Herbots, Atluri, Hurst, Bradley et al. US patent 6,613,677 (9/3/2003) **N. Herbots , et al . Mat. Sci. Eng B87, (2001) 303

How to nucleate Ordered SiO 2 on Si(100)? Via wet chemical clean

Herbots-Atluri Wet/Dry Chemical Clean Principle* ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],*N. Herbots , et al . Mat. Sci. Eng B87, (2001) 303. *US patent 6,613,677 (9/3/2003)

What Are the Key Properties of the Herbots-Atluri Clean? ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

What Experimental Evidence Exists That Demonstrate an Ordered Silicon Oxide Phase? ,[object Object],[object Object],[object Object],[object Object],[object Object],*P.Ye (PhD 1995), J. Xiang (Ph.D 1999) *Q.B. Hurst, et al, Mater. Res. Soc. Symp. Proc. 567, 183 (2000).

What is the Experimental Evidence For Ordered SiO2 interphase? ,[object Object],[object Object],**Q.B. Hurst, et al, Mater. Res. Soc. Symp. Proc. 567, 183 (2000). N. Herbots, et al, Mater. Sci. Eng. B 87, 303 (2001).

What Experimental Evidence Exists That Demonstrate an Ordered Silicon Oxide Phase? ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

Experimental Evidence for Ordered SiO 2 ? ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],*N. Herbots, et al, Mater. Res. Soc. Symp. Proc. 510, 157 (1999). **Q.B. Hurst, et al, Mater. Res. Soc. Symp. Proc. 567, 183 (2000).

What Experimental Evidence Exists That Demonstrate a Ordered Silicon Oxide Phase? ,[object Object],[object Object],[object Object],[object Object],*J. Shaw, et al , J. Appl. Phys, to be published

What Experimental Evidence Exists That Demonstrate a Ordered Silicon Oxide Phase? ,[object Object],[object Object],[object Object],[object Object],[object Object],*N. Herbots, et al, Mater. Sci. Eng. B 87, 303 (2001).

What Experimental Evidence Exists That Demonstrate a Ordered Silicon Oxide Phase? ,[object Object],[object Object],[object Object],*J. Shaw, N. Herbots, Q. Hurst, J.D. Bradley et al , MRS (2000), Mat. Sci (2001),J. Appl. Phys, to be published (2005) 1.3

What Experimental Evidence Exists That Demonstrate a Ordered Silicon Oxide Phase? ,[object Object],[object Object],[object Object],[object Object],*K. T. Queeney, N. Herbots, Y. Chabal, J. Shaw APL (2004), J. Shaw,N. Herbots, J. D. Bradley, R. J. Culbertson, V. Atluri, JAP (2005)

Motivation and Basis of of this work ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

3DSTRING Computing Engine – Monte Carlo Method (cont’d) ,[object Object],[object Object]

High Energy MeV Scattering, Channeling and Blocking, and Yield Analysis ,[object Object],[object Object],[object Object]

High Energy MeV Scattering, Channeling and Blocking, and Yield Analysis (cont’d) ,[object Object],*A. Kutana, University of Houston, Ph.D Thesis 2003

Testing 3DSTRING: Si<100> [1] I. Stensgaard, et al, Surf. Sci. 102 (1981) 1. [2] L.C. Feldman, et al, Nucl. Inst. Meth. 168 (1980) 589. [3] T.E. Jackman, et al, Surf. Sci. 100 (1980) 35. [4] R. Haight, et al, J. Appl. Phys. 53 (1982) 4484. -> GREAT MATCH! Si <100> Simulated Experimental Incident This Work Q. Hurst Ion Energy (MeV) atom/row atom/cm 2 atom/row atom/cm 2 atom/row atom/cm 2 (x10 15 ) (x10 15 ) (x10 15 ) 0.8 2.655 7.20 2.67 7.25 2.7 7.60 [1] [3] 1 2.957 8.02 3.01 8.18 3.0 4.80 [1,2] [4] 2 4.335 11.76 4.29 11.60 3.05 5.395 14.64 5.22 14.20

Testing 3DSTRING: Si<110> [2] N.W. Cheung , et al , Appl. Phys. Lett. 35 [1] T.E. Jackman, et al, Surf. Sci. 100 (1980) 35. ,[object Object],Si <110> Simulated Experimental Incident This Work Q. Hurst Ion Energy (MeV) atom/row atom/cm 2 atom/row atom/cm 2 atom/row atom/cm 2 (x10 15 ) (x10 15 ) (x10 15 ) 0.8 3.194 6.13 3.17 6.08 6.4 [1] 1 3.613 6.93 3.38 6.48 2 5.187 9.95 5.09 9.77 9.8 [2] 3.05 6.493 12.46 6.51 12.5

Testing 3DSTRING: Si<111> [1] R. Haight, J. Appl. Phys. 53 (1982) 4484. ,[object Object],Si <111> Simulated Experimental Incident This Work Q. Hurst Ion Energy (MeV) atom/row atom/cm 2 atom/row atom/cm 2 atom/row atom/cm 2 (x10 15 ) (x10 15 ) (x10 15 ) 0.8 2.899 7.38 2.9 7.38 1 3.285 8.36 3.23 8.22 8 [1] 2 4.685 11.93 4.58 11.7 3.05 5.84 14.87 5.97 15.2

Building β - Cristobalite Using 3DSTRING as the Starting Point ,[object Object],[object Object],[object Object], - Cristobalite viewed in the <100> orientation

β – Cristobalite <100> ,[object Object],[object Object],[object Object]

β – Cristobalite <110> by far the most challenging! ,[object Object],[object Object],[object Object],[object Object]

β – Cristobalite Simulated Surface Peak Yields ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

β – Cristobalite Simulated SP ,[object Object],[object Object],Bulk Beta Cristobalite Orientation Si Surface Peak O Surface Peak O:Si ratio – in Surface Areal Densities O:Si ratio - "Intuitive Estimate" atom/row atom/cm 2 atom/row atom/cm 2 <100> 1.844 4.997x10 15 4.802 1.301 x10 16 2.604 2.67 error +/-0.034 0.044 0.072 <110> 2.615 5.022x10 15 5.864 1.126 x10 16 2.242 2 error 0.062 0.107 0.094 <111> 1.038 2.647x10 15 3.813 9.723 x10 15 3.673 3.43 error 0.028 0.039 0.137

β – Cristobalite Thin Film on Bulk Si ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

β – Cristobalite Thin Film on Bulk Si ,[object Object],[object Object],[object Object],[object Object],[object Object]

β – Cristobalite <111> Thin Film on Bulk Si ,[object Object]

β – Cristobalite <111> Thin Film on Bulk Si ,[object Object],[object Object],[object Object],[object Object]

β – Cristobalite <111> Thin Film on Bulk Si ,[object Object],*J.M. Shaw,N. Herbots, Q.B. Hurst, R.J. Culbertson, J.D. Bradley,V. Atluri, J. Appl. Phys. – to be published

β – Cristobalite <111> Thin Film on Bulk Si with Tetragonal Distortion ,[object Object],[object Object],*J.M. Shaw,N. Herbots, Q.B. Hurst, R.J. Culbertson, J.D. Bradley,V. Atluri, J. Appl. Phys. – to be published

β – Cristobalite <111> Thin Film on Bulk Si with Tetragonal Distortion ,[object Object],[object Object],[object Object],[object Object],[object Object]

β – Cristobalite <100> Thin Film on Bulk Si with Tetragonal Distortion ,[object Object],*J.M. Shaw,N. Herbots, Q.B. Hurst, R.J. Culbertson, J.D. Bradley,V. Atluri, J. Appl. Phys. – to be published

Interphase Thickness Summary: β – Cristobalite Volume Orientation Beta Cristobalite Status Slope of Experimental Data Silicon Areal Density Oxygen Areal Density Thickness x 10 15 atom/cm 2 x 10 15 atom/cm 2 Å <100> Silicon fitted forced 1/2 slope (SiO 2 ) 13.08 2.18 11.63 <100> Simple z tetragonally distorted 100% forced 1/2 slope (SiO 2 ) 13.08 1.98 22.72 <110> Silicon fitted forced 1/2 slope (SiO 2 ) 10.15 3.06 10.85 <110> Simple z tetragonally distorted 100% forced 1/2 slope (SiO 2 ) 10.15 2.36 19.83 <111> Silicon fitted 7.38 4.45 10.85 <111> Simple z tetragonally distorted 100% 7.38 3.308 18.66

Summary and Conclusion (Cont’d) ,[object Object],[object Object],[object Object],[object Object],[object Object]

Future Work ,[object Object],[object Object],[object Object],[object Object],[object Object]

N Herbots Us Patent6613667

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N Herbots Us Patent6613667