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Control • Monitor • Protect • Communicate
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 1
Silicon Carbide Power Devices: Advanced
Gate Driving Techniques
About AgileSwitch
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 2
Who we are
• Founded January 2010 by serial entrepreneurs
Albert Charpentier and Rob Weber
• Based in Philadelphia, PA(US East Coast)
• 20+ team members
• 20+ products
• Global sales, marketing
and support
• Member: Power America
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 3
SIC APPLICATIONS & ASSOCIATED
PROBLEMS
12/19/201
6
Patents and PatentsPending © 2016 AgileSwitch, LLC 4
Patents and PatentsPending
SiC Application Areas – Early Adopters
12/19/2016 5
PV / Solar
Wind
Electric Vehicles &
Chargers
Energy Storage
Traction APUHeavy Duty Vehicles Induction Heating
Welding
© 2016 AgileSwitch, LLC
Problems associated with driving SiC MOSFETs
1. SiC MOSFETs are very fast (due to their device
physics)
– The effect is high turn-off di/dt, which causes:
• Vds - Voltage overshoot
• Oscillation in the Vds
2. SiC MOSFETs have very narrow short circuit
withstand window
– Drivers need to detect and respond quickly
3. Susceptibility to noise (low Vth)
4. Temperature feedback can become critical if
operation causes die temperature to swing
612/19/2016 Patents and Patents Pending © 2016 AgileSwitch, LLC
Patents and PatentsPending
GATE DRIVING TECHNIQUES
© 2016 AgileSwitch, LLC 7
12/19/201
6
IGBT Gate Driver
di/dt control
achieved by
changing the Rg
Design Trade-Off:
Larger Rg = smaller di/dt = more losses
Smaller Rg = larger di/dt = less losses
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 8
SiC - Gate Driver – Solution 1
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 9
Crude control of the SiC
MOSFETs can be achived using
the IGBT Gate Driver approach:
1) Large Rg(off)
1) Lower Vds overshoot
2) Damped oscillation of
Vds
However, the trade off is:
1) Higher switching loss
2) Slower DSAT response time
SiC - Gate Driver – Solution 2
This technique provides a more precise switching control and features:
1) Low Gate Resistor Value – Rg(on) & Rg(off)
2) di/dt control is achieved through the use of Augmented Turn-Off
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 10
Vgs = 0V
-Vgs
+Vgs
Level 1
Level 1
Level 2
Time(ns)Time(ns)Time(ns)
Vgs
Vgs
Vgs
Time1 Time 1 Time 2
Conventional Augmented Turn-OffTM
Normal Operation
Short Circuit
Normal Operation Short Circuit
Augmented Turn-OffTM Explained
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 11
Augmented Turn-OffTM
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 12
• AgileSwitch’s Augmented Turn-Off helps designers reduce
switching losses, reduce ringing in the Vds and suppress stray/
loop inductance induced overshoot voltages
– There are two operation loops
• Normal Operation
– The Gate Voltage has an intermediate step between on & off
– The measurable benefit is reduced switching loss, ringing and overshoot
voltage
• Short Circuit Condition
– The Gate Voltage has one or more intermediate steps between on & off
– Augmented Turn-Off helps reduce stress on the Power Semiconductor, in
addition to reducing ringing and overshoot voltage
Advanced Gate Driving for Silicon
Carbide MOSFETs
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 13
Ideal SiC Driver
Augmented Turn-OffTM
Reduced
Ringing,
Voltage
overshoot
Lower
Switching
Losses
Precise
DSAT
Control
Advanced Fault Monitoring
Enhanced
Reliability
Better
Diagnostics
Software Configurable
Shortened Design
Design Flexibility
Cycle
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 14
Ideal SiC Driver – Feature Table
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 15
Features
Ideal Unit
SiC Gate Driver – Solution 2
dv/dt min. 100 kV/us
Interface Voltage Single Ended/ Differential
Direct Mounting Yes
Flying Lead Option Yes
Master/ Slave (Parallelling) Yes
UVLO Yes
OVLO Yes
Over Current Protection Yes
Augmented Turn-OffTM Yes
Temperature Monitoring Yes
DC Link Voltage Monitoring Yes
Software Configurable (Deadtime,
Desat, Turn-Off) Yes
SiC MOSFET Turn-Off – Normal Operation 1
Rg = 1Ω Rg = 5.6Ω Rg = 10Ω
Conventional Gate Drive Solution
Rg = 0.5Ω
Augmented Turn-OffTM Settings:
575ns, 4.75V
Eoff = 3.9mJ Eoff = 5.6mJ Eoff = 12.5mJ
AgileSwitch Gate Drive Solution – Augmented Turn-OffTM
Eoff = 6.4mJ
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 16
DUT: Rohm BSM300D12P2E001
Patents and PatentsPending12/19/2016 (c) 2016 AgileSwitch, LLC 17
SiC MOSFET Turn-Off – Short Circuit Condition
Rg = 10 Ω
Purple Trace = Vge,
Blue Trace = Vce
Vce Overshoot = 700V
Blue Trace = Vge,
Purple Trace = Vce
Vce Overshoot = 500V
Conventional Gate Drive Solution AgileSwitch Gate Drive Solution –
Augmented Turn-OffTM (ATOff)
Rg = 0.5 Ω +ATOff
Wolfspeed 1700V/ 300A – 62EM1 Test Results
Normal Operation
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 18
Short Circuit Operation
Purple = Vgs;
Green = Vds;
Blue = Ids
Study 1
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 19
• DUT: Rohm BSM300D12P2E001
• Vds = 800V; Ids = 266A
GateResistor
(Ω)
EOFF Measured
(mJ)
Overshoot
(V)
1.0 3.9 450
5.6 8.5 280
10.0 12.5 200
Turn Off Level
(V)
Turn Off Time
(ns)
EOFF Measured
(mJ)
Overshoot (V)
4.25 500 5.7 220
4.50 500 6.0 260
4.75 500 6.2 270
4.50 469 5.3 320
4.50 500 6.0 260
4.50 531 6.2 260
4.50 575 6.4 230
4.75 575 6.4 220
4.75 625 7.1 210
Augmented Turn-Off
Gate Resistor Control Only
SIC GATE DRIVER – SOLUTION 2
12/19/201
6
Patents and PatentsPending © 2016 AgileSwitch, LLC 20
EDEM3-Programmable EconoDualTM
Electrical Series
Key Switch Driver Features:
• 7 Unique Fault conditions
• Isolated Temperature Monitoring, PWM
• Isolated High Voltage Monitoring, PWM
• 2 X 3W output power
• RoHS and UL compliant design
• Interface for 5V or 15V logic levels
• Gate drive voltage +18V/-4V
• Peak gate current +/-15A
Software Programmable Features (8):
• Augmented Turn-OffTM (ATOff)
• Power supply under-voltage lockout (UVLO)
• Power supply over-voltage lockout (OVLO)
• Desaturation detection settings
• Dead time
• Fault lockout settings
• Automatic Reset settings
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 21
62EM1-Programmable 62mm Electrical Series
Key Switch Driver Features:
• 7 Unique Fault conditions
• Temperature Monitoring, PWM
• Isolated High Voltage Monitoring, PWM
• 2 X 10W output power
• RoHS and UL compliant design
• Interface for 5V or 15V logic levels
• Gate drive voltage +20V/-5V
• Peak gate current +/-20A
Software Programmable Features (8):
• Augmented Turn-OffTM (ATOff)
• Power supply under-voltage lockout (UVLO)
• Power supply over-voltage lockout (OVLO)
• Desaturation detection settings
• Dead time
• Fault lockout settings
• Automatic Reset settings
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 22
Patents and PatentsPending
Manufacturers Supported
© 2016 AgileSwitch, LLC 2312/19/2016
*More coming soon
Patents and PatentsPending
How to Reach Us
• Website: www.nacsemi.com
• Email:
• Phone:
sales@nacsemi.com
727-828-0187 (US)
+44 (0)7882 758982 (Europe)
James Charlton: james.c@nacsemi.com
Cliff Robins: Cliff.robins@nacsemi.com
12/19/2016 24© 2016 AgileSwitch, LLC
Patents and PatentsPending
Thank you
© 2016 AgileSwitch, LLC
Patents and PatentsPending
BACKUP
© 2016 AgileSwitch, LLC 26
12/19/201
6
AgileSwitch SiC Driver – Feature Description
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 27
Under Voltage Lockout (UVLO) / Over Voltage Lockout (OVLO)
• The input supply voltage is monitored to protect the SiC MOSFET from low/ high voltages that
would damage its long term reliability. By default, the UVLO/OVLO detect level is set to a pre-
determined value, but can be modified based on the end-user requirement.
• A UVLO or OVLO will trigger the respective fault and the SiC MOSFET gate will be pulled to
-Vgs
Temperature and High Voltage Monitoring
• AgileSwitch Drivers provide two 25 kHz, 3.3V PWM output signals, one each for temperature
and the DC Link Voltage (between High Side drain and Low Side source).
• Users can define a threshold, which when exceeded will trigger a fault
Overcurrent Protection
• SiC MOSFET’s have limited Short Circuit withstand capability. Hence, the drivers should have
the ability to respond to a short circuit quickly and appropriately.
• AgileSwitch Gate Drivers for SiC accurately monitor the Vds. The drivers are software
configurable (Over Current threshold, Blanking Time, Response time)
• AgileSwitch also implements Augmented Turn-Off which is critical in controlling the
aftermath of a short circuit (shutting down the FET in a high current condition)
AgileSwitch SiC Driver – Feature Description
12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 28
Master/ Slave (Paralleling)
• Paralleling Power Semiconductors requires precise input trigger synchronization. Variation
leads to current imbalance (+ve temperature co-efficient auto-corrects the imbalance, but
this takes time)
• AgileSwitch Gate Drivers feature Master-Slave operation, wherein the triggers are
synchronized and maintained with <10ns of timing difference
Software Configurability
• Each implementation of an inverter requires a unique configuration from its components.
Others may call it crazy, but at AgileSwitch, we call it Tuesday.
• AgileSwitch drivers enable the user to tailor the gate drivers to their requirements. The
primary features that can be configured are:
– AugmentedTurn-OffTM
– Power supply under-voltage lockout (UVLO)
– Power supply over-voltage lockout (OVLO)
– Desaturation detectionsettings
– Deadtime
– Fault lockout settings
– Automatic Reset settings

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AgileSwitch SiC Product Overview

  • 1. Control • Monitor • Protect • Communicate 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 1 Silicon Carbide Power Devices: Advanced Gate Driving Techniques
  • 2. About AgileSwitch 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 2
  • 3. Who we are • Founded January 2010 by serial entrepreneurs Albert Charpentier and Rob Weber • Based in Philadelphia, PA(US East Coast) • 20+ team members • 20+ products • Global sales, marketing and support • Member: Power America 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 3
  • 4. SIC APPLICATIONS & ASSOCIATED PROBLEMS 12/19/201 6 Patents and PatentsPending © 2016 AgileSwitch, LLC 4
  • 5. Patents and PatentsPending SiC Application Areas – Early Adopters 12/19/2016 5 PV / Solar Wind Electric Vehicles & Chargers Energy Storage Traction APUHeavy Duty Vehicles Induction Heating Welding © 2016 AgileSwitch, LLC
  • 6. Problems associated with driving SiC MOSFETs 1. SiC MOSFETs are very fast (due to their device physics) – The effect is high turn-off di/dt, which causes: • Vds - Voltage overshoot • Oscillation in the Vds 2. SiC MOSFETs have very narrow short circuit withstand window – Drivers need to detect and respond quickly 3. Susceptibility to noise (low Vth) 4. Temperature feedback can become critical if operation causes die temperature to swing 612/19/2016 Patents and Patents Pending © 2016 AgileSwitch, LLC
  • 7. Patents and PatentsPending GATE DRIVING TECHNIQUES © 2016 AgileSwitch, LLC 7 12/19/201 6
  • 8. IGBT Gate Driver di/dt control achieved by changing the Rg Design Trade-Off: Larger Rg = smaller di/dt = more losses Smaller Rg = larger di/dt = less losses 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 8
  • 9. SiC - Gate Driver – Solution 1 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 9 Crude control of the SiC MOSFETs can be achived using the IGBT Gate Driver approach: 1) Large Rg(off) 1) Lower Vds overshoot 2) Damped oscillation of Vds However, the trade off is: 1) Higher switching loss 2) Slower DSAT response time
  • 10. SiC - Gate Driver – Solution 2 This technique provides a more precise switching control and features: 1) Low Gate Resistor Value – Rg(on) & Rg(off) 2) di/dt control is achieved through the use of Augmented Turn-Off 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 10
  • 11. Vgs = 0V -Vgs +Vgs Level 1 Level 1 Level 2 Time(ns)Time(ns)Time(ns) Vgs Vgs Vgs Time1 Time 1 Time 2 Conventional Augmented Turn-OffTM Normal Operation Short Circuit Normal Operation Short Circuit Augmented Turn-OffTM Explained 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 11
  • 12. Augmented Turn-OffTM 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 12 • AgileSwitch’s Augmented Turn-Off helps designers reduce switching losses, reduce ringing in the Vds and suppress stray/ loop inductance induced overshoot voltages – There are two operation loops • Normal Operation – The Gate Voltage has an intermediate step between on & off – The measurable benefit is reduced switching loss, ringing and overshoot voltage • Short Circuit Condition – The Gate Voltage has one or more intermediate steps between on & off – Augmented Turn-Off helps reduce stress on the Power Semiconductor, in addition to reducing ringing and overshoot voltage
  • 13. Advanced Gate Driving for Silicon Carbide MOSFETs 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 13
  • 14. Ideal SiC Driver Augmented Turn-OffTM Reduced Ringing, Voltage overshoot Lower Switching Losses Precise DSAT Control Advanced Fault Monitoring Enhanced Reliability Better Diagnostics Software Configurable Shortened Design Design Flexibility Cycle 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 14
  • 15. Ideal SiC Driver – Feature Table 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 15 Features Ideal Unit SiC Gate Driver – Solution 2 dv/dt min. 100 kV/us Interface Voltage Single Ended/ Differential Direct Mounting Yes Flying Lead Option Yes Master/ Slave (Parallelling) Yes UVLO Yes OVLO Yes Over Current Protection Yes Augmented Turn-OffTM Yes Temperature Monitoring Yes DC Link Voltage Monitoring Yes Software Configurable (Deadtime, Desat, Turn-Off) Yes
  • 16. SiC MOSFET Turn-Off – Normal Operation 1 Rg = 1Ω Rg = 5.6Ω Rg = 10Ω Conventional Gate Drive Solution Rg = 0.5Ω Augmented Turn-OffTM Settings: 575ns, 4.75V Eoff = 3.9mJ Eoff = 5.6mJ Eoff = 12.5mJ AgileSwitch Gate Drive Solution – Augmented Turn-OffTM Eoff = 6.4mJ 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 16 DUT: Rohm BSM300D12P2E001
  • 17. Patents and PatentsPending12/19/2016 (c) 2016 AgileSwitch, LLC 17 SiC MOSFET Turn-Off – Short Circuit Condition Rg = 10 Ω Purple Trace = Vge, Blue Trace = Vce Vce Overshoot = 700V Blue Trace = Vge, Purple Trace = Vce Vce Overshoot = 500V Conventional Gate Drive Solution AgileSwitch Gate Drive Solution – Augmented Turn-OffTM (ATOff) Rg = 0.5 Ω +ATOff
  • 18. Wolfspeed 1700V/ 300A – 62EM1 Test Results Normal Operation 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 18 Short Circuit Operation Purple = Vgs; Green = Vds; Blue = Ids
  • 19. Study 1 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 19 • DUT: Rohm BSM300D12P2E001 • Vds = 800V; Ids = 266A GateResistor (Ω) EOFF Measured (mJ) Overshoot (V) 1.0 3.9 450 5.6 8.5 280 10.0 12.5 200 Turn Off Level (V) Turn Off Time (ns) EOFF Measured (mJ) Overshoot (V) 4.25 500 5.7 220 4.50 500 6.0 260 4.75 500 6.2 270 4.50 469 5.3 320 4.50 500 6.0 260 4.50 531 6.2 260 4.50 575 6.4 230 4.75 575 6.4 220 4.75 625 7.1 210 Augmented Turn-Off Gate Resistor Control Only
  • 20. SIC GATE DRIVER – SOLUTION 2 12/19/201 6 Patents and PatentsPending © 2016 AgileSwitch, LLC 20
  • 21. EDEM3-Programmable EconoDualTM Electrical Series Key Switch Driver Features: • 7 Unique Fault conditions • Isolated Temperature Monitoring, PWM • Isolated High Voltage Monitoring, PWM • 2 X 3W output power • RoHS and UL compliant design • Interface for 5V or 15V logic levels • Gate drive voltage +18V/-4V • Peak gate current +/-15A Software Programmable Features (8): • Augmented Turn-OffTM (ATOff) • Power supply under-voltage lockout (UVLO) • Power supply over-voltage lockout (OVLO) • Desaturation detection settings • Dead time • Fault lockout settings • Automatic Reset settings 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 21
  • 22. 62EM1-Programmable 62mm Electrical Series Key Switch Driver Features: • 7 Unique Fault conditions • Temperature Monitoring, PWM • Isolated High Voltage Monitoring, PWM • 2 X 10W output power • RoHS and UL compliant design • Interface for 5V or 15V logic levels • Gate drive voltage +20V/-5V • Peak gate current +/-20A Software Programmable Features (8): • Augmented Turn-OffTM (ATOff) • Power supply under-voltage lockout (UVLO) • Power supply over-voltage lockout (OVLO) • Desaturation detection settings • Dead time • Fault lockout settings • Automatic Reset settings 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 22
  • 23. Patents and PatentsPending Manufacturers Supported © 2016 AgileSwitch, LLC 2312/19/2016 *More coming soon
  • 24. Patents and PatentsPending How to Reach Us • Website: www.nacsemi.com • Email: • Phone: sales@nacsemi.com 727-828-0187 (US) +44 (0)7882 758982 (Europe) James Charlton: james.c@nacsemi.com Cliff Robins: Cliff.robins@nacsemi.com 12/19/2016 24© 2016 AgileSwitch, LLC
  • 25. Patents and PatentsPending Thank you © 2016 AgileSwitch, LLC
  • 26. Patents and PatentsPending BACKUP © 2016 AgileSwitch, LLC 26 12/19/201 6
  • 27. AgileSwitch SiC Driver – Feature Description 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 27 Under Voltage Lockout (UVLO) / Over Voltage Lockout (OVLO) • The input supply voltage is monitored to protect the SiC MOSFET from low/ high voltages that would damage its long term reliability. By default, the UVLO/OVLO detect level is set to a pre- determined value, but can be modified based on the end-user requirement. • A UVLO or OVLO will trigger the respective fault and the SiC MOSFET gate will be pulled to -Vgs Temperature and High Voltage Monitoring • AgileSwitch Drivers provide two 25 kHz, 3.3V PWM output signals, one each for temperature and the DC Link Voltage (between High Side drain and Low Side source). • Users can define a threshold, which when exceeded will trigger a fault Overcurrent Protection • SiC MOSFET’s have limited Short Circuit withstand capability. Hence, the drivers should have the ability to respond to a short circuit quickly and appropriately. • AgileSwitch Gate Drivers for SiC accurately monitor the Vds. The drivers are software configurable (Over Current threshold, Blanking Time, Response time) • AgileSwitch also implements Augmented Turn-Off which is critical in controlling the aftermath of a short circuit (shutting down the FET in a high current condition)
  • 28. AgileSwitch SiC Driver – Feature Description 12/19/2016 Patents and PatentsPending © 2016 AgileSwitch, LLC 28 Master/ Slave (Paralleling) • Paralleling Power Semiconductors requires precise input trigger synchronization. Variation leads to current imbalance (+ve temperature co-efficient auto-corrects the imbalance, but this takes time) • AgileSwitch Gate Drivers feature Master-Slave operation, wherein the triggers are synchronized and maintained with <10ns of timing difference Software Configurability • Each implementation of an inverter requires a unique configuration from its components. Others may call it crazy, but at AgileSwitch, we call it Tuesday. • AgileSwitch drivers enable the user to tailor the gate drivers to their requirements. The primary features that can be configured are: – AugmentedTurn-OffTM – Power supply under-voltage lockout (UVLO) – Power supply over-voltage lockout (OVLO) – Desaturation detectionsettings – Deadtime – Fault lockout settings – Automatic Reset settings