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In this Issue
For more than 10 years, CORIAL contributes to the innovation
in Failure Analysis for the semiconductor industry. We deliver an
equipment and process portfolio giving rise to high performance,
high reliability and low cost of ownership.
CORIAL equipment for sample preparation before electrical
and physical Failure Analysis is designed and manufactured
in France. Sales and support is provided worldwide through a
network of 11 local offices and partners.
Our technical team constantly improves tools and processes
to deliver increased performances to our customers in Failure
Analysis.
Check out our latest updates for FA in this issue of the
newsletter:
Market Insights by CORIAL
plasma technology and applications
About CORIAL
Process
Performance
Equipment
Reliability
Substrate
Flexibility
Enabling
Failure Analysis
CORIAL manufactures plasma etch and deposition
equipment which meets the quality and performance
requirements of our customers from R&D through
mass production.
Clean Room & Facility
•	 1,800 Sq.ft. facility,
•	 500 Sq.ft. clean room for system ssembly and
testing,
•	 Application lab for process development and
optimization,
•	 Spare parts warehouse.
Applications
CORIAL’s portfolio include RIE, ICP, ICP-CVD,
and PECVD tools with constant or pulsed process
parameters, to address a wide range on end-market
•	 Failure analysis
•	 MEMS/NEMS
•	 LEDs/OLEDs
•	 Advanced
Packaging
•	 Wireless
devices
•	 Photomask
•	 Power
electronics
•	 Nanotechnology
•	 Role of dry etch in Failure Analysis
•	 Plasma etch process performance
•	 Examples of low damage plasma processes
•	 Applications
•	 Corial 200I Specifications
•	 Support for process development and optimization
Role of Dry Etch in Failure Analysis of Electronic Devices
The quest for more powerful, smaller
and faster integrated circuits raises the
need for multiple layers of metallization
during wafer processing. The preparation
of electronic devices for failure analysis,
yield enhancement or competitive analysis
is thus becoming more challenging as it requires to remove
these layers of materials to access the failure site. Engineers’
expertise combined with tools enabling precise process control
is the key to success in sample preparation.
A well prepared sample makes it easier the investigation to
reveal the defect within a device and identify its root cause.
Depending on the type of device, sample preparation for
inspection may require different techniques such as package
opening, deprocessing, cross-section, or backside silicon
access. With the exception of package opening, these
techniques can be implemented with Focused Ion Beam (FIB)
and Plasma Etcher.
Dry etch is the reference technology for sample deprocessing
and backside silicon access. The basic principle of a dry etch
process is the transformation of a solid material to gaseous
byproduct through chemical reactions involving plasma activated
species, and assisted (Reactive Ion Etching) or not (Inductive
Coupling Plasma) by ion bombardment. These reactive species
(atoms, radicals, and ions) are produced in plasma by collisions
between electrons and molecules.
Deprocessing step during sample preparation is challenging .
In many cases device must retain electrical integrity for further
test and its surface must remain clean.
Some of the desirable advantages of dry etch for Failure
Analysis include full retention of electrical integrity, tight
adjustment of the etch profile (isotropic or anisotropic), control
of etch rate, high selectivity to underlayer material, and low
plasma damage.
To address customers’
requirements, the CORIAL ICP
source is capable for low plasma
potential (< 15 Volts) and tight
control of very low bias voltage,
giving rise to minimum damage of
metal lines.
Dry etch uniquely supports a
variety of chemistries to enable
individual or multi-layer removal,
while maintaining planar surface. It
means that only one level of material becomes visible across
the entire sample surface.
At CORIAL, we have developed and successfully transferred
to our customers ICP planarizing processes for various
materials.
Market Insights by CORIAL
Process Underlayer Chemistry Etch rate
(µm/min)
Selectivity Uniformity
Polyimide Si3
N4
O2
> 1 > 50 ± 5%
Si3
N4
SiO2
CHF3
+ O2
> 0.3 > 1.5 ± 3%
SiO2
SiO2
> 0.15 - ± 3%
SiO2
/TiN TiN CHF3
+ C2
H4
0.05 > 10 ± 3%
Aluminum* SiO2
CL2
+ C2
H4
1 > 10 ± 5%
FA Process Performance on 200mm Wafers
By Andrei Uvarov - R&D Manager
* Corial 200I with load lock option
Planar deprocessing of 200 mm wafer
Dry Etch Processes for Sample Preparation
Enabling Failure Analysis
Adjustment of etch profile
Isotropic etching without RF biasing Anisotropic etching with low RF biasing
Dry etchers have evolved to fit the
challenges offered by today’s electronic
devices.
CORIAL provides a wide library of processes for failure
analysis with single or multiple delayering of die, packaged
die, or wafer.
By Julie Poulet
Application Engineer
«With CORIAL etcher, the failure analysis engineer can switch
between ICP or RIE process modes to adjust the etch profile of
the sample».
Polyimide removal with Si3
N4
underlayer
Control of sample temperature
Exposure of 9 metal layers - Aluminum
technology - without metal lift
Exposure of 7 metal layers - Cu
technology - without metal lift
« CORIAL ICP etcher features helium backside cooling to
control temperature of wafers, dies and packaged dies. »
Aluminum etched to expose SiO2
- after mechanical polishing -
Aluminum etching with SiO2
underlayer
- before mechanical polishing -
APPLICATIONS
•	 Isotropic polyimide
removal
•	 Isotropic silicon nitride
removal
•	 Anisotropic silicon oxide
removal
•	 Metal removal (Al)
•	 ILD removal
•	 Low K / ultra low K
removal
•	 Backside Bulk Si thinning
Deprocessing of ultra low-k dielectric
28 nm technology
Deprocessing of ultra low-k dielectric
20 nm technology
Die deprocessing in advanced technological processes
Polyimide, Si3
N4
and SiO2
removal to
expose Metal 2
« All materials are etched at the same etch rate to get a
planar surface. The application of layer-by-layer process
enables deprocessing down to the bottom layers.»
Contacts
www.corial.net
Market Insights by CORIAL
Corial 200I Specifications
Process Mode ICP - RIE
Reactor Concept High density plasma source
Reactor Sources RF Generator at 13.56MHz
ICP Generator at 2MHz
Automatic Matching Network
Process
Gas Lines
Up to 8 gas lines
Co2
, CHF3
, SF6
, C2
H4
, Ar
Vacuum System Very short pumping cycles (< 3 min)
High conductance pumping system with:
- Dry pump dedicated to plasma processes (28m3
/h)
- Magnetically levitated TMP (500l/s)
System Loading Shuttle loading - direct into carrier
Load-lock available as an option for Aluminum
etching
Footprint Length = 1080mm
Width = 750mm
Height = 1434mm
At CORIAL, we aim not to be only a provider of etch and
deposition systems but a trusted partner focused on the
success of all your projects. CORIAL provides a wide range
of support packages, which are tailored to the specific needs
and expectations of our customers, from the ealiest stage of
customer relationship and all along the equipment lifetime.
For example, for each tool from our factory, we provide free
of charge system installation, a step-by-step acceptance
procedure and a start up of the equipment on customer
site.
CORIAL application support is provided by a team of
highly qualified application engineers. Application support is
unlimited and free of charge for all our customers. To support
you in the development of deposition & etch processes that
run accurately, repeatably and reliably, our applications lab is
equipped with a wide range of measurements tools (including
scanning electron microscope, atomic force microscope,
profilometer, spectroscopic ellipsometer).
CORIAL support team is our customers main contact for
answering all questions related to equipment operation,
maintenance, and troubleshooting. Hardware and software
support is provided free of charge for 2 years starting from
tool acceptance. Remote system access upon customer’s
agreement allows systems check and operation and even
upload of processes through our Virtual Private Network
(VPN). Remote access guarantees short response times
and efficient service.
CORIAL also provides flexible training programs on
equipment or processes, tailored to your needs, with specific
content, scope and duration.
CORIAL Headquarter
266 Chemin des Franques
38190 BERNIN FRANCE
T: +33 (0)4 76 01 10 10
F: +33 (0)4 76 24 53 81
corial@corial.net
CORIAL Support Policy
By Bruno Simon
R&D Engineer
Our latest generation of manually loaded 200 mm system, the
Corial 200I, is a fast and low damage ICP system for packaged
die, single die, and wafers up to 200mm.
Contact for Sales & Support
CORIAL
Florence Olivier
T: +33 (0)6 89 54 61 75
f-olivier@corial.net

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Market Insights by CORIAL

  • 1. In this Issue For more than 10 years, CORIAL contributes to the innovation in Failure Analysis for the semiconductor industry. We deliver an equipment and process portfolio giving rise to high performance, high reliability and low cost of ownership. CORIAL equipment for sample preparation before electrical and physical Failure Analysis is designed and manufactured in France. Sales and support is provided worldwide through a network of 11 local offices and partners. Our technical team constantly improves tools and processes to deliver increased performances to our customers in Failure Analysis. Check out our latest updates for FA in this issue of the newsletter: Market Insights by CORIAL plasma technology and applications About CORIAL Process Performance Equipment Reliability Substrate Flexibility Enabling Failure Analysis CORIAL manufactures plasma etch and deposition equipment which meets the quality and performance requirements of our customers from R&D through mass production. Clean Room & Facility • 1,800 Sq.ft. facility, • 500 Sq.ft. clean room for system ssembly and testing, • Application lab for process development and optimization, • Spare parts warehouse. Applications CORIAL’s portfolio include RIE, ICP, ICP-CVD, and PECVD tools with constant or pulsed process parameters, to address a wide range on end-market • Failure analysis • MEMS/NEMS • LEDs/OLEDs • Advanced Packaging • Wireless devices • Photomask • Power electronics • Nanotechnology • Role of dry etch in Failure Analysis • Plasma etch process performance • Examples of low damage plasma processes • Applications • Corial 200I Specifications • Support for process development and optimization
  • 2. Role of Dry Etch in Failure Analysis of Electronic Devices The quest for more powerful, smaller and faster integrated circuits raises the need for multiple layers of metallization during wafer processing. The preparation of electronic devices for failure analysis, yield enhancement or competitive analysis is thus becoming more challenging as it requires to remove these layers of materials to access the failure site. Engineers’ expertise combined with tools enabling precise process control is the key to success in sample preparation. A well prepared sample makes it easier the investigation to reveal the defect within a device and identify its root cause. Depending on the type of device, sample preparation for inspection may require different techniques such as package opening, deprocessing, cross-section, or backside silicon access. With the exception of package opening, these techniques can be implemented with Focused Ion Beam (FIB) and Plasma Etcher. Dry etch is the reference technology for sample deprocessing and backside silicon access. The basic principle of a dry etch process is the transformation of a solid material to gaseous byproduct through chemical reactions involving plasma activated species, and assisted (Reactive Ion Etching) or not (Inductive Coupling Plasma) by ion bombardment. These reactive species (atoms, radicals, and ions) are produced in plasma by collisions between electrons and molecules. Deprocessing step during sample preparation is challenging . In many cases device must retain electrical integrity for further test and its surface must remain clean. Some of the desirable advantages of dry etch for Failure Analysis include full retention of electrical integrity, tight adjustment of the etch profile (isotropic or anisotropic), control of etch rate, high selectivity to underlayer material, and low plasma damage. To address customers’ requirements, the CORIAL ICP source is capable for low plasma potential (< 15 Volts) and tight control of very low bias voltage, giving rise to minimum damage of metal lines. Dry etch uniquely supports a variety of chemistries to enable individual or multi-layer removal, while maintaining planar surface. It means that only one level of material becomes visible across the entire sample surface. At CORIAL, we have developed and successfully transferred to our customers ICP planarizing processes for various materials. Market Insights by CORIAL Process Underlayer Chemistry Etch rate (µm/min) Selectivity Uniformity Polyimide Si3 N4 O2 > 1 > 50 ± 5% Si3 N4 SiO2 CHF3 + O2 > 0.3 > 1.5 ± 3% SiO2 SiO2 > 0.15 - ± 3% SiO2 /TiN TiN CHF3 + C2 H4 0.05 > 10 ± 3% Aluminum* SiO2 CL2 + C2 H4 1 > 10 ± 5% FA Process Performance on 200mm Wafers By Andrei Uvarov - R&D Manager * Corial 200I with load lock option
  • 3. Planar deprocessing of 200 mm wafer Dry Etch Processes for Sample Preparation Enabling Failure Analysis Adjustment of etch profile Isotropic etching without RF biasing Anisotropic etching with low RF biasing Dry etchers have evolved to fit the challenges offered by today’s electronic devices. CORIAL provides a wide library of processes for failure analysis with single or multiple delayering of die, packaged die, or wafer. By Julie Poulet Application Engineer «With CORIAL etcher, the failure analysis engineer can switch between ICP or RIE process modes to adjust the etch profile of the sample». Polyimide removal with Si3 N4 underlayer Control of sample temperature Exposure of 9 metal layers - Aluminum technology - without metal lift Exposure of 7 metal layers - Cu technology - without metal lift « CORIAL ICP etcher features helium backside cooling to control temperature of wafers, dies and packaged dies. » Aluminum etched to expose SiO2 - after mechanical polishing - Aluminum etching with SiO2 underlayer - before mechanical polishing - APPLICATIONS • Isotropic polyimide removal • Isotropic silicon nitride removal • Anisotropic silicon oxide removal • Metal removal (Al) • ILD removal • Low K / ultra low K removal • Backside Bulk Si thinning Deprocessing of ultra low-k dielectric 28 nm technology Deprocessing of ultra low-k dielectric 20 nm technology Die deprocessing in advanced technological processes Polyimide, Si3 N4 and SiO2 removal to expose Metal 2 « All materials are etched at the same etch rate to get a planar surface. The application of layer-by-layer process enables deprocessing down to the bottom layers.»
  • 4. Contacts www.corial.net Market Insights by CORIAL Corial 200I Specifications Process Mode ICP - RIE Reactor Concept High density plasma source Reactor Sources RF Generator at 13.56MHz ICP Generator at 2MHz Automatic Matching Network Process Gas Lines Up to 8 gas lines Co2 , CHF3 , SF6 , C2 H4 , Ar Vacuum System Very short pumping cycles (< 3 min) High conductance pumping system with: - Dry pump dedicated to plasma processes (28m3 /h) - Magnetically levitated TMP (500l/s) System Loading Shuttle loading - direct into carrier Load-lock available as an option for Aluminum etching Footprint Length = 1080mm Width = 750mm Height = 1434mm At CORIAL, we aim not to be only a provider of etch and deposition systems but a trusted partner focused on the success of all your projects. CORIAL provides a wide range of support packages, which are tailored to the specific needs and expectations of our customers, from the ealiest stage of customer relationship and all along the equipment lifetime. For example, for each tool from our factory, we provide free of charge system installation, a step-by-step acceptance procedure and a start up of the equipment on customer site. CORIAL application support is provided by a team of highly qualified application engineers. Application support is unlimited and free of charge for all our customers. To support you in the development of deposition & etch processes that run accurately, repeatably and reliably, our applications lab is equipped with a wide range of measurements tools (including scanning electron microscope, atomic force microscope, profilometer, spectroscopic ellipsometer). CORIAL support team is our customers main contact for answering all questions related to equipment operation, maintenance, and troubleshooting. Hardware and software support is provided free of charge for 2 years starting from tool acceptance. Remote system access upon customer’s agreement allows systems check and operation and even upload of processes through our Virtual Private Network (VPN). Remote access guarantees short response times and efficient service. CORIAL also provides flexible training programs on equipment or processes, tailored to your needs, with specific content, scope and duration. CORIAL Headquarter 266 Chemin des Franques 38190 BERNIN FRANCE T: +33 (0)4 76 01 10 10 F: +33 (0)4 76 24 53 81 corial@corial.net CORIAL Support Policy By Bruno Simon R&D Engineer Our latest generation of manually loaded 200 mm system, the Corial 200I, is a fast and low damage ICP system for packaged die, single die, and wafers up to 200mm. Contact for Sales & Support CORIAL Florence Olivier T: +33 (0)6 89 54 61 75 f-olivier@corial.net