Importance of SSPS in SDG and ESG, and importance of antennas in SSPS
Quantum Dot Solar Cells Simulation Approach
1. Quantum Dot Solar Cells:
A Simulation Approach
Ing. Ariel Cedola
GEMyDE, Departamento de Electrotecnia, Facultad de Ingeniería, Universidad Nacional de La Plata
Calle 48 y 116, 1er Piso, La Plata, 1900, Buenos Aires, Argentina
&
Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino
Corso Duca degli Abruzzi 24, 10129, Torino, Italia
2014
3. Quantum Dot Solar Cells (QDSC) have gained
attention during the last years as one of the most
feasible semiconductor structures for the
implementation of the intermediate band solar cell
(IBSC) concept.
IBSCs are p-i-n structures with a narrow band of
energy levels within the bandgap of the intrinsic
region.
According to theoretical predictions, based on
idealized considerations, IBSCs maximum
efficiencies could reach values >60%, due to:
• Absorption of low energy photons (processes 1
and 2 in the figure), generation and escape of
extra carriers.
• Increment of cell short-circuit current (Jsc) with
no degradation of open-circuit voltage (Voc).
Intermediate band (IB)
Barrier
Luque A. et. al, Phys. Rev. Lett.,
Vol. 78, N. 26, p. 5014 (1997)
Ing. Ariel Cedola – UNLP & POLITO
4. • Semiconductor nanostructures with quantum mechanical properties (e.g. InAs)
¿What are QDs?
• Size: Base 10-60 nm; Height 4-10 nm
• x, y, z confinement (0D DOS)
• Discrete energy levels
Ing. Ariel Cedola – UNLP & POLITO
5. • Bandgap and absorption spectrum depend on materials, sizes and shapes
• Non uniformity: absorption spectrum broadening
4 nm
9 nm
8 nm
InAs/GaAs InAs/GaAs GaN QDs
Ing. Ariel Cedola – UNLP & POLITO
7. EQE
Quantum efficiency of solar cells with embedded QDs layers
Without QDs
QDs (x, ND)
QDs (x, ND)
QDs (x, ND)
Ing. Ariel Cedola – UNLP & POLITO
8. InAs/GaAs Quantum Dot Solar Cells (QDSCs)
InAs QDs
layers
p GaAs n GaAs
i GaAs
Energía[eV]
0
-1.5
1.5
x
Energy bands diagram
Ing. Ariel Cedola – UNLP & POLITO
9. Ing. Ariel Cedola – UNLP & POLITO
InAs QDs
layers
InAs/GaAs Quantum Dot Solar Cells (QDSCs)
14. Our work: Drift-Diffusion + QDs carrier dynamics modeling
2
2 i i i i i id a WL WL ES ES GS GS
i
V q
p n N N p n p n p n
x
1 i iWL B B WLn
B B nESC nCAP
i
Jn
R G R R
t q x
1 i ip WL B B WL
B B pESC pCAP
i
Jp
R G R R
t q x
n n n
V n
J q n qD
x x
p p p
V p
J q p qD
x x
• Poisson equation
• Continuity equations for holes and electrons
Drift-diffusion transport model
i = QDs layer
Ing. Ariel Cedola – UNLP & POLITO
15. i i i i i i i
i i
WL B WL WL B WL ES ES WL
nCAP nESC nCAP nESC WL WL
n
R R R R R G
t
i i i i i i i i i
i i
ES WL ES ES WL ES GS GS ES
nCAP nESC nCAP nESC ES ES
n
R R R R R G
t
i i i i i
i i
GS ES GS GS ES
nCAP nESC GS GS
n
R R R G
t
( )
( )
( )( )
1n p ESC
n p ESC
n pn p
R
DOS
( )
( )
( ) ( )
1n p CAP
n p CAP
n p n p
R
DOS
=WL, ES, GS; =B, WL, ES
• Rate equations for electrons at each energy level at each QD layer
• Escape and capture rates for electrons (holes)
fe(h)i
fe(h)i
Ing. Ariel Cedola – UNLP & POLITO
QDSCs modeling
i = QDs layer
• Recombination rates
17. Results: comparison with experimental measurements
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
-0.016
-0.014
-0.012
-0.01
-0.008
-0.006
-0.004
-0.002
0
Tensión [V]
Densidaddecorriente[A/cm2]
Celda de GaAs Ref. [5]
QDSC Ref. [5]
Simulación de la celda de GaAs
Simulación de la QDSC
[5] K. Sablon et al, Strong enhancement of solar cell efficiency due to quantum dots with built in charge,
NanoLetters, vol. 11, pp. 2311-2317 (2011).
Voc=50 mV
Jsc=600 mA/cm2
Ing. Ariel Cedola – UNLP & POLITO
18. 300 400 500 600 700 800 900 1000 1100 1200
10
0
10
1
10
2
10
3
10
4
10
5
Longitud de onda [nm]
Respuestaespectral[a.u.]
Celda de GaAs Ref. [5]
QDSC Ref. [5]
Simulación de la celda de GaAs
Simulación de la QDSC
[5] K. Sablon et al, Strong enhancement of solar cell efficiency due to quantum dots with built in charge,
NanoLetters, vol. 11, pp. 2311-2317 (2011).
Ing. Ariel Cedola – UNLP & POLITO
Results: comparison with experimental measurements (cont.)
19. Results: Dependence of I-V curves with number of QD layers and density
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
-0.025
-0.02
-0.015
-0.01
-0.005
0
Tensión [V]
Densidaddecorriente[A/cm-2]
ND = 1.2e10 cm-2
ND = 4e10 cm-2
ND = 1e11 cm-2
20x
100x
Ing. Ariel Cedola – UNLP & POLITO
20. 20 30 40 50 60 70 80 90 100
14.6
14.8
15
15.2
15.4
15.6
15.8
16
16.2
Número de capas de QDs
Eficiencia[%]
ND = 1.2 e10 cm-2
ND = 4e10 cm-2
ND = 1e11 cm-2
Eficiencia de la celda
de GaAs sin QDs
Results: Dependence of the efficiency with the number of QD layers and density
Ing. Ariel Cedola – UNLP & POLITO
30. Conclusions
• A device-level model including QD intersubband carrier dynamics and transport has been developed
for simulation of QDSCs.
• Preliminary results agree very well with experimental data.
• Effects of doping and non-additive behavior of the QD photocurrent have been investigated.
• QD Photocurrent can be increased with optimal n-uniform doping, althoug the Voc degradation is still
a factor to investigate.
• Non-linearities can be associated to the de-synchronization of QD dynamics
Ing. Ariel Cedola – UNLP & POLITO
31. Thankyou for your attention.
ariel.cedola@ing.unlp.edu.ar
Ing. Ariel Cedola – UNLP & POLITO