2.  I, Anshu kumarof class EE{A4}
1 SEM, completed this power
point presentation about SEMI
CONDUCTOR under the
guidance and supervision of MR.
NAVEEN ASATI with a lots of
useful and valuable for
Electronics.

7. A/C To Band
Theory
 There is no free
electron in conducting
band.
 Fully filled and valence
band.
 5 electron volt to 15
electron volt energy
gas.
 For diamond it is 6

8. A/C To Band
Theory
 Free electron are
available in
conducting band is
large amount.
 Valence band and
conducting band
are partially over
lapping in
conductor.
 The free electron
are not fixed.

9. A/C To Band Theory
 There is no free electron
at 0K.
 But on increased
temperature than
produced free electron.
 Energy gab is very low.
 Si - 1.2 ev
 Ge - 0.7 ev

 Si (14) – 2,8,4
 Ge (32) – 2,8,18,4


10.  Holes is electron missing sites.
 Charge carriers are electron as well as
holes.
 Pure farm of semiconductor is called as
intrinsic.
 There is a control on the flow of charge
carrier due to the temp difference.
 There occurs a crystal defect in the semi
conductor.
 Impurity adding - doping .
 Impurity atom is called as - dopent.
 After doping the semiconductor is called
extrinsic semiconductor.

11. N- type.
P – type.

12.  If pentravalents atom is fused with
tetravalent impurity semiconductor is
very small extents ( one atom in one
mole semiconductor ).
 Free electron as majority it is not
negative charge , it is also neutral .

14.  It trivalent atoms is fused with
tetravalent impurity semiconductor is
very small extents ( one atom in one
mole semiconductor ).
 Hole are in majority.
 It is not negative charge ,it is also
neutral.

16.  If P- type semiconductor and N- type
semiconductor to fused than the resulting crystal is
called as P-N junction.
 It is P-N junction “Diode”.
 Diode has various types depending on property of
P- type crystal and N- type crystal.
 There is recombination of free electron or hole.
 This depletion N- type become + charge and P-
type become - charge.
 0.7 volt for Si.
 0.3 volt for Ge.
 Minority charge carries is called as leakage
current.
 The connection of battery with a P-N junction diode

18.  The connection of battery with a P-N
junction diode is called as biasing.
 It is two types :-
 Forward biasing.
 Reverse biasing .
 P- terminal be at high potential and N-
terminal be low potential than diode is
called as forward biasing.
 P- terminal be at low potential and N-
terminal be high potential than diode is
called as reverse biasing.